RESEARCH

In collaboration with AFRL (Air Force Research Lab. in U.S.)

Atomic layer deposition (ALD) is a highly precise technique used in the manufacture of AI semiconductors. It allows for the deposition of ultra-thin and highly uniform layers of materials on a substrate with precise control over the thickness, composition, and properties.  By depositing thin films in a controlled manner, it is possible to create complex three-dimensional structures that are critical for the performance of high-performance semiconductor devices, such as microprocessors, memory chips, and power semiconductors. 

In collaboration with SKKU, Penn State Univ., Houston Univ.

Beryllium oxide (BeO) exhibits high thermal conductivity, which makes it an ideal choice for AI and  power semiconductors. When compared to other materials commonly used in the manufacture of power semiconductors, BeO has the highest thermal conductivity. The high thermal conductivity of BeO allows it to efficiently transfer heat away from the semiconductor device, which is critical for the performance and reliability of electronic systems. In addition, BeO also has excellent electrical insulation properties, which further enhances its suitability for use in AI and power semiconductors.

The chemical imprinting is a new technology that integrates lithography and etching. This technology can fabricate three-dimensional nanopatterns directly on a semiconductor through a chemical reaction after physical contact between the stamp and the semiconductor.  Unlike nanoimprint and soft lithography, chemical imprinting does not require polymer resist and deep dry etching, Instead, the metal catalyst on the stamp is in physical contact with the semiconductor and the chemical etching occurs directly on the semiconductor substrate. Our group filed two US Patents and  a number of high-impact journal papers.