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Plasma Enhanced Atomic Layer Deposition (PE-ALD): NCD Lucid M-100
Plasma Enhanced Atomic Layer Deposition (PE-ALD): NCD Lucid M-100
- ALD-Crystalline (wurtzite) BeO-on-GaN/AlGaN HEMTs
- ALD BeO-on-Si substrates: Smart epi Si growth-on-insulator (SEOI)
- Polarization-Induced Two-Dimensional Electron Gas at BeO/ZnO Interface
We demonstrated the formation of a polarization-induced two-dimensional electron gas (2DEG) at a BeO/ZnO heterostructure interface. The polarity discontinuity induced by the c-axis-grown crystalline BeO film caused charges to accumulate on the ZnO substrate. The sheet carrier concentration and mobility of the BeO/ZnO heterostructure were 2.0 × 1014 cm-2 and 22 cm2·V-1·s-1 at room temperature, respectively, approximately 57 times and 11 times greater than those of bare ZnO, respectively.
We demonstrated the formation of a polarization-induced two-dimensional electron gas (2DEG) at a BeO/ZnO heterostructure interface. The polarity discontinuity induced by the c-axis-grown crystalline BeO film caused charges to accumulate on the ZnO substrate. The sheet carrier concentration and mobility of the BeO/ZnO heterostructure were 2.0 × 1014 cm-2 and 22 cm2·V-1·s-1 at room temperature, respectively, approximately 57 times and 11 times greater than those of bare ZnO, respectively.
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