Conference

2025

(Keynote talk) Innovative Pathways in Semiconductor Processing Using ALD BeO and MacEtch

Jungwoo Oh

AWAD 2025, Japan

Oxidant Free MACE of Si Using Ultrathin Ni Catalyst: Smooth Etching and Wafer-Scale

Haekyun Bong, Kyunghwan Kim, Jungwoo Oh

AWAD 2025, Japan

Thermal Conductivity Measurements of BeO Thin Films Grown by Plasma Enhanced Atomic Layer Deposition

Jihyun Kim, Jonghyun Bae, Dongyun Seo, Dohwan Jung, Jungwoo Oh,  Jungwan Cho

IEEE ITherm (2025.05) The Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

Enhancing BeO Electric Properties on 4H-SiC with SiO₂ Interlayer for Power Device Applications

Sangoh Han, Juyoung chae, Jonghyun Bae, Dohwan Jung, Siwon Lee, Jungwoo Oh

한국반도체학술대회 (2025.02)

Ultrathin Ni catalyst for CMOS-compatible metal-assisted chemical etching of Si

Kyunghwan Kim, Haekyun Bong, Sunhae Choi, Jungwoo Oh

한국반도체학술대회 (2025.02)

Electrical Properties of Atomic Layer Deposited Beryllium Oxide on Si

Gyeonghan Nae, Dohwan Jung, Jonghyun Bae, Sangoh Han ,Jungwoo Oh

한국반도체학술대회 (2025.02)

High etch rate of Metal-assisted chemical etching on Si microstructure with optimized Au thickness and etchant temperature

Sumin Jeon, Haekyun Bong, and Jungwoo Oh

한국반도체학술대회 (2025.02)

Atomic Layer Deposition of Beryllium Oxide on Germanium for Enhanced Interface Layer

Jeongwoo Lee, Siwon Lee, Sangoh Han, Jonghyun Bae , Jungwoo Oh

한국반도체학술대회 (2025.02)

2024

Thermal Conductivity Measurements of BeO Thin Films Grown by Plasma Enhanced Atomic Layer Deposition

Jihyun Kim†, Jonghyun Bae†, Dongyun Seo, Dohwan Jung, Jungwoo Oh*, and Jungwan Cho*

APWS 2024 (Asia-Pacific Workshop on Widegap Semiconductors)   (2024.10)

Optimization of ALD Beryllium Oxide as a Potential High-K Dielectric for Low-Leakage Ge transistor

Sangoh Han, Dohwan Jung, Jonghyun Bae, Haekyun Bong, Juyoung chae, Christopher W. Bielawski, Jungwoo Oh

AWAD 2024 (2024.07)

Improved Dielectric Properties of Atomic Layer Deposited BeO using the Discrete Feeding Method

Juyoung Chae, Jonghyun Bae, Yoonseo Jang, Jungwoo Oh

AWAD 2024 (2024.07)

베릴륨 산화물 이용한 다결정 저마늄 층의 저온 결정화 연구

봉해균, 장윤서, 배종현, Christopher W. Bielawski, 오정우

대한전자공학회 2024년도 하계종합학술대회 (2024.06)

ALD BeO Gate Dielectric for Improved Thermal Management in β-Ga2O3 Power Devices

정도환, 장윤서, 봉해균, 배종현, 채주영, 한상오, Christopher W. Bielawski, 오정우

제 7회 한국산화갈륨기술연구회 (2024.06)

ALD BeO Grown on (-201) and (001) β-Ga2O3 Substrates for Power Devices

Dohwan Jung, Yoonseo Jang, Sangoh Han, Christopher W. Bielawski, Jungwoo Oh 

한국반도체학술대회 (2024.01)

Nickel-Silicide Alloy as an Alternative to Noble Metal Catalyst for Metal-assisted Chemical Etching of Si

Haekyun Bong, Kyunghwan Kim, Sunhae Choi, Jungwoo Oh 

한국반도체학술대회 (2024.01)

Demonstration of Atomic Layer Deposition of BeO using Discrete Feeding Method

Jonghyun Bae, Yoonseo Jang, Juyoung Chae, Christopher W. Bielawski, Jungwoo Oh 

한국반도체학술대회 (2024.01)

Optimization of ALD BeO Gate Dielectrics for 3D CMOS Devices

Semi An, Jonghyun Bae, Sangoh Han, Yoonseo Jang, Christopher W. Bielawski, Jungwoo Oh 

한국반도체학술대회 (2024.01)

2023

Applications of Atomic Layer Deposition of BeO: From Gate Dielectrics to Ferroelectric Memristors 

Sangoh Han, Yoonseo Jang, Dohwan Jung, Haekyun Bong, Jonghyun Bae, Juyoung Chae. Christopher W. Bielawski, Jungwoo Oh

반도체공학회 종합학술대회 (2023.12)

Electrical and Thermal Properties of BeO Gate Dielectrics for β-Ga2O3 Power Devices

Dohwan Jung, Yoonseo Jang, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh 

MRS Fall (2023.11)

Catalytic Metal-assisted Chemical Etching and Chemical Imprinting of Semiconductors

(Invited talk) Jungwoo Oh

IEEE Nano (2023.07)

Atomic Layer Deposition of BeO for Wide-Bandgap Semiconductor Heterostructures 

(Invited talk) Jungwoo Oh

CSW (2023.05)

High conduction band offset of ALD BeO film on Wide-Bandgap Semiconductors

Dohwan Jung, Yoonseo Jang, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh*

IEEE EDTM (2023.03)

Plasma Enhanced Atomic Layer Deposition of Crystalline BeO Films for Wide-Bandgap Semiconductors

Yoonseo Jang, Dohwan Jung, Christopher W. Bielawski, Jungwoo Oh*

IEEE EDTM (2023.03)

High Conduction Band Offset of ALD BeO Films on β-Ga2O3 Substrates

Dohwan Jung, Yoonseo Jang, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh*

한국반도체학술대회 (2023.02) 

Polarization Effects of Wurtzite BeO/ZnO Heterostructures via Atomic Layer Deposition

Yoonseo Jang, Dohwan Jung, Christopher W. Bielawski, Jungwoo Oh*

한국반도체학술대회 (2023.02) 

2022

Crystalline BeO Film Grown by Atomic Layer Deposition for Wide Bandgap Semiconductor Devices

Dohwan Jung, Yoonseo Jang, Prakash R. Sultane,  Christopher W.Bielawski,  Jungwoo Oh

ENGE 2022 (2022.11)

Direct Patterning of Crystalline Semiconductor by Integration of Nanoimprint lithographyand Metal-assisted Chemical Etching

Kyunghwan Kim, Haekyun Bong, Sunhae Choi,  Jungwoo Oh

ENGE 2022 (2022.11)

Ultrahigh-Etch-Rate Metal-Assisted Chemical Etching of Si Microstructures

Sunhae Choi, Kyunghwan Kim, Haekyun Bong, and Jungwoo Oh

AWAD 2022 (Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices)  (2022.07)

Front-end-of-line 공정 적용을 위한 플라즈마 강화 원자층 증착법으로 제조된 BeO 박막의 특성

장윤서, 정도환, Prakash R. Sultane, Christopher W. Bielawski, 오정우 

대한전자공학회 하계종합학술대회 (2022.06)

전기화학식각법을 이용한 Ge 마이크로 구조 제작

봉해균, 김경환, 오정우

대한전자공학회 하계종합학술대회 (2022.06)

Deep-Etched Si Microstructures via Metal-Assisted Chemical Etching

Sunhae Choi, Kyunghwan Kim, Haekyun Bong, Jungwoo Oh

한국반도체학술대회 (2022.02) 

2021

Terracing α-Mo2C Electrocatalyst for pH-Universal Hydrogen Evolution Reaction

Jangwon Bang, In Kyu Moon, Jungwoo Oh

한국반도체학술대회 (2021.02)

Low Temperature Growth of Beryllium Oxide Thin Films by Plasma Enhanced Atomic Layer Deposition

Yoonseo Jang, Dohwan Jung, Christopher W. Bielawski, Jungwoo Oh

한국반도체학술대회 (2021.02)

2020

Low Interfacial Thermal Resistance for BeO-on-Diamond

Kiumars Aryana, Yoonseo Jang, David Olson, John Gaskins, Dohwan Jung, Jung Yum, Eric Larsen, Christopher Bielawski, Sean King, Jungwoo Oh, Patrick Hopkins

MRS Fall Meeting (2020.11)

Multidimensional Single-Crystalline 2D Mo2C sheets for pH-universal Hydrogen Evolution Reaction

Jangwon Bang, In Kyu Moon, Keorock Choi, Jungwoo Oh

한국반도체학술대회 (2020.02)

Surface Texturing of Conductive Electrodes for Front-illuminated Devices via Metal-assisted Chemical Etching

Haekyun Bong, Kyunghwan Kim, Jungwoo Oh

한국반도체학술대회 (2020.02)

Properties of beryllium oxide thin films prepared by plasma-enhanced atomic layer deposition

Yoonseo Jang, Seung Min Lee,  Jung Hwan Yum,  Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh

한국반도체학술대회 (2020.02)

Epitaxial BeO Dielectric based AlGaN/GaN metal-oxide semiconductor high-electron-mobility transistors

Dohwan Jung, Seonno Yoon, Jungwoo Oh 

한국반도체학술대회 (2020.02)

2019

Single-step nanopatterning of GaAs via wet-based chemical etching with metal stamp

Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seung Min Lee, Jungwoo Oh

IEEE NMDC (2019.10)

AlGaN/GaN MOS power transistors with epitaxial BeO gate dielectrics

Dohwan Jung, Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski,  Jungwoo Oh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)  (2019.07)

Characteristics of BeO thin films grown by plasma-enhanced atomic layer deposition

Yoonseo Jang, Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski , Jungwoo Oh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (2019.07)

High quality 2D Mo2C and 2D Mo2C/Graphene heterostructure directly grown by chemical vapor deposition

Jangwon Bang, In Kyu Moon,  Jungwoo Oh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (2019.07)

Effect of Pt morphologies on photoelectochemical water splitting on GaAs for hydrogen production

Keorock Choi, In Kyu Moon, Jungwoo Oh

한국반도체학술대회 (2019.02)

Resist-free Fabrication of Three-dimensional Silicon in a Single Chemical Process

Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh

한국반도체학술대회 (2019.02)

Atomic-layer deposition of crystalline BeO for gate dielectrics of wide-bandgap power transistors

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski , Jungwoo Oh

한국반도체학술대회 (2019.02)

Electronic and physical structures of atomic-layer deposited BeO on beta-Ga2O3

Seung Min Lee, Jongho Jung, Jung Hwan Yum, Jungwoo Oh

한국반도체학술대회 (2019.02)

Metal catalyzed direct imprinting of GaAs in etch bath 

Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seungmin Lee, and Jungwoo Oh

Nano Convergence Conference (2019.01) 

2018

Exceptional Crystal and Electrical Properties of Atomic Layer Deposited BeO on 4H-SiC

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski and Jungwoo Oh 

IEEE Semiconductor Interface Specialists Conference (SISC), San Diego (2018.12)

Epitaxial ZnO dielectric based AlGaN/GaN metal-oxide semiconductor high-electron-mobility transistor 

Seonno Yoon , Jungwoo Oh 

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Japan (2018.07) 

Direct imprinting three-dimensional Si patterns using metal catalytic stamp 

Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh 

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Japan (2018.07) 

Epitaxial Growth of BeO-on-GaN using Atomic Layer Deposition 

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski , Jungwoo Oh 

EUROSOI (2018.03)

Domain match mechanism of wurtzite BeO thin films on GaN substrates 

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski , Jungwoo Oh 

Nano Convergence Conference (2018.01) 

Dual textured GaAs by wet chemical etching assisted with metal catalyst 

Kyunghwan Kim, Jungwoo Oh 

Nano Convergence Conference (2018.01) 

2017

Epitaxial Silicon on Beryllium Oxide Atomic Layer Deposited on Silicon Substrate 

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh 

IEEE Semiconductor Interface Specialists Conference (SISC), San Diego (2017.12) 

Surface texturing of GaAs with anisotropic chemical etching and interfacial metal catalysts 

Kyunghwan Kim and Jungwoo Oh 

IEEE Semiconductor Interface Specialists Conference (SISC), San Diego (2017.12) 

The characteristics of changes in etch rate by metal thickness in Si metal-assisted chemical etching (poster) 

Keorock Choi and Jungwoo Oh 

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Korea (2017.07) 

Wet-based surface texturing for GaAs antireflective structures (Oral) 

Kyunghwan Kim and Jungwoo Oh 

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Korea (2017.07)

2016

Antireflective Si nanohole subwavelength structures by wet-based chemical etching

Yunwon Song, Kyunghwan Kim and Jungwoo Oh

E-MRS, Warsaw, Poland (2016.09)

Surface reflection of GaAs textures in micro/nano scales fabricated by an-isotropic and metal assisted chemical etching

Kyunghwan Kim, Yunwon Song and Jungwoo Oh

E-MRS, Warsaw, Poland (2016.09)

Optical Characteristics of Ge-on-Si after Phosphorus Implantation for Monolithic Integration on Si Platform

Jiwoong Baek, Bugeun Ki, Chulwon Lee, Yong-Hoon Cho, Donguk Nam, Jungwoo Oh

Nano Korea (2016.07)

Photoluminescence Characteristics after Phosphorus Implantation onto In-situ Doped Ge-on-Si for CMOS-compatible Ge lasers

Jiwoong Baek, Bugeun Ki and Jungwoo Oh

Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) (2016.07)

Highly Compressible and Conductive N-Doped Graphene Foam for Lithium Batteries

I. K. Moon, K. Y. Chun, and J. Oh

18th International Meeting on Lithium Batteries (2016.06)

3D reduced graphene oxide aerogels with high electrical conductivity

In Kyu Moon, Seonno Yoon Kyung Hwan Kim and Jungwoo Oh

Korean Conference on Semiconductors (KCS), Korea (2016.02)

Hot Carrier Degradation of Ni related Defects in Sub-100nm Ni-Pt Salicide FinFETs

Seung Min Lee and Jungwoo Oh

Korean Conference on Semiconductors (KCS), Korea (2016.02)

Alternative Etching Technique of Metal-Assisted Chemical Etching for High Aspect Ratio 3D-Device Fabrication

Keorock Choi and Jungwoo Oh

Korean Conference on Semiconductors (KCS), Korea (2016.02)

2015

Antireflective Subwavelength Structures fabricated by Au-assisted agglomeration and chemical etching on GaAs

Yunwon Song and Jungwoo Oh

EUPVSEC, Hamburg, Germany (2015.09)

Raman Analysis of in-plane Biaxial Strain for Ge-on-Si Lasers

Bugeun Ki, Jiwoong Baek, Chulwon Lee, Yong-Hoon Cho, and Jungwoo Oh

CLEO-PR, Busan, Korea (2015.08)

Interfacial reactions of Si/Ti/Al/Cu Ohmic metallization on AlGaN/GaN heterostructures

Seonno Yoon, Jangwon Bang, Yunwon Song and Jungwoo Oh

KCS, Incheon, Korea (2015.02)

Antireflective Subwavelength Structures for High Efficient III-V Photovoltaics

Yunwon Song and Jungwoo Oh

KCS, Incheon, Korea (2015.02)

Raman depth profiles for non-linearly strained Ge-on-Si Laser

Bugeun Ki, Chulwon Lee, Yong-Hun Cho, and Jungwoo Oh

KCS, Incheon, Korea (2015.02) 

Three-dimensional Si nano- and micro-structures using metal-assisted chemical etching

Keorock Choi and Jungwoo Oh

KCS, Incheon, Korea (2015.02)

2014

Metal Assisted Chemical etch of Si for Three-Dimensional Information and Energy Devices

Keorock Choi, Yunwon Song and Jungwoo Oh

ENGE, Jeju, Korea (2014.11)

Structural characterization of Ohmic contact using Cu outer layer for AlGaN/GaN High Electron Mobility Transistors

Seonno Yoon, Jangwon Bang and Jungwoo Oh

ENGE, Jeju, Korea (2014.11)

The Effects of Metal Thickness and Pattern Size on Micro-Scale Metal-Assisted Chemical Etching of Silicon

Keorock Choi, Yunwon Song and Jungwoo Oh

ECS, Cancun, Mexico (2014.10)

Antirefletive characteristics of disordered GaAs subwavelength structures realized by metal-assisted chemical etching using thermally dewetted Au catalytic nanoparticles

Yunwon Song, Keorock Choi and Jungwoo Oh

ECS, Cancun, Mexico (2014.10)

Physical Analysis of Alternative Cu-based Ohmic Contact to Au free CMOS Compatible AlGaN/GaN High Electron Mobility Transistors

Seonno Yoon, Jangwon Bang, Yungwon Song and Jungwoo Oh

IWN, Wroclaw, Poland (2014.08)

Control of tensile strain epitaxial Ge film on Si (001) substrate by e-beam evaporator

Kyungho Kim, Bugeun Ki and Jungwoo Oh

AWAD, Kanazawa, Japan (2014.07)

Raman analysis of thermally induced tensile strain of Ge-on-Si epitaxy for Si-compatible direct bandgap Ge lasers

Bugeun Ki, Kyungho Kim and Jungwoo Oh

MRS, San Francisco, USA (2014.04)

AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Al2O3 and HfO2 High-k gate dielectric deposited on n+ GaN Cap Layers

Seonno Yoon and Jungwoo Oh

MRS, San Francisco, USA (2014.04)

2013

Gate controlled spin-orbit coupling in the InAs quantum well structure

김경호, 김형준, 오정우

한국광전자학회 (2013.11)

High Aspect Ratio 3차원 화합물반도체 구조 제작을 위한 비등방성 화학일차원 식각기술 조건 연구

송윤원, 오정우

한국물리학회 (2013.10)

Non-Si high mobility Ge/III-V CMOS challenges and opportunities

Jungwoo Oh

ISPSA, Jeju, Korea (2013.07)

Alternative Channel III-V/Ge on Si Transistors for POST CMOS Architecture

Jungwoo Oh, Yunwon Song, Seonno Yoon and Bugeun Ki

KCS, Korea (2013.02)

Comparative Study of Gate First and Last Si MOSFETs Fabrication Processes Using ALD Beryllium Oxide as an Interface Passivation Layer

J. H. Yum, H. S. Shin, Ryan M. Mushinski, Todd. W. Hudnall, Jungwoo Oh, W. Y. Loh, C. W. Bielawski, G. Bersuker, S. K. Banerjee, W. E. Wang, P.D. Kirsch, and R. Jammy

International Symposium on VLSI-TSA, Hsinchu Taiwan (2013)

2012 

High Mobility III-V Channel CMOS Technologies and Extension to Heterogeneous Optoelectronic Device Integration

오정우, 송윤원, 윤선노, 기부근

한국물리학회 (2012.10)

InAs Quantum-Well MOSFET (Lg = 100 nm) with Record High gm, fT and fmax

T.-W. Kim, R. Hill, C.D. Young, D. Veksler, L. Morassi, S. Oktybrshky, Jungwoo Oh, C.Y. Kang, D.-H. Kim, J.A. Del Alamo, C. Hobbs, P. Kirsch, R. Jammy

Proc. Symposium on VLSI Technology (2012. 06) 

2011 

“CMOS-compatible III-V field-effect transistor development for high performance and low power”, Jungwoo Oh, J et.al, Asia-Pacific Workshop on Fundamentals and Applications of. Advanced Semiconductor Devices (AWAD), Daejeon, Korea, June 2011 Invited

“Gate Dielectric Issues on InGaAs High Mobility Channel Materials”, Jungwoo Oh, J et.al,  MRS April 2011 Invited

“CMOS Scaling With III-V Channels For Improved Performance And Low Power”, R. J. W. Hill, J. Oh, C. Park, J. Barnett, J. Price, J. Huang, N. Goel, W.Y. Loh, P. Kirsch, P. Majhi, R. Jammy, ECS May 2011 

2010 

“High-performance Enhancement-Mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect,”, Ok, I.;Hung, P. Y. ; Veksler, D. ; Oh, J. ; Majhi, P. ; Jammy, R., Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European, pp. 166 – 169, Sevilla, Spain. Sept. 2010

“High Specific Contact Resistance of Ohmic Contacts to n-Ge Source/Drain and Low Transport Characteristics of Ge nMOSFETs”, J. Oh, J. Huang,Y. T. Chen, I. Ok,K. Jeon,S. H. Lee,B. Sassman,W. Y. Loh,H. D. Lee,D. H. Ko,P. D. Kirsch,R. Jammy, International Conference on Solid State Devices and Materials (SSDM), Tokyo Japan, 2010

“SiGe CMOS on (110) Channel Orientation with Mobility Boosters: Surface Orientation, Channel Directions, and Uniaxial Strain”, J.Oh, S.-H. Lee, K.-S. Min, J. Huang, B.G. Min, B. Sassman, K. Jeon, W.-Y. Loh, J. Barnett, I. Ok, C.-Y. Kang, C. Smith, D.-H. Ko, P. D. Kirsch, and R. Jammy, Symposia on VLSI Technology, Hawaii, 2010

"High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility,”, Jungwoo Oh, J et.al. Asia-Pacific Workshop on Fundamentals and Applications of. Advanced Semiconductor Devices (AWAD), Tokyo Japan, June 2010 Invited

“Enhanced Performance in SOI FinFETs with Low Series Resistance by Aluminum Implant as a Solution Beyond 22nm Node,”, I. Ok, C. D. Young, W. Y. Loh, T. Ngai, S Lian, J. Oh, M. P. Rodgers1, S. Bennett, H. O. Stamper, D. L. Franca1, S. Lin, K. Akarvardar, C. Smith, C. Hobbs, P. Kirsch, R. Jammy, Symposia on VLSI Technology, 2010

“Si Tunnel Transistors with a Novel Silicided Source and 46 mV/dec Swing,”, K. Jeon, Wei-Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, C. S. Park, Casey Smith, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tsu-Jae King Liu­­, and Chenming Hu, Symposia on VLSI Technology, Hawaii, 2010 

2009 

“Mechanisms for Low On-State Current of Ge (SiGe) nMOSFETs: A Comparative Study on Gate Stack, Resistance, and Orientation-Dependent Effective Masses", J. Oh, I. Ok, C.-Y. Kang, M. Jamil, S.-H. Lee1, W.-Y. Loh, J. Huang, B. Sassman, L. Smith, S. Parthasarathy, B. E. Coss, W.-H. Choi, H.-D. Lee, M. Cho, S. K. Banerjee, P. Majhi, P. D. Kirsch, H.-H. Tseng and R. Jammy, Symposia on VLSI Technology, Kyoto Japan 2009

“Additive Mobility Enhancement and Off-State Current Reduction in SiGe Channel pMOSFETs with Optimized Si Cap and High-k Metal Gate Stacks”, Jungwoo Oh, Prashant Majhi, and Raj Jammy, Raymond Joe, Anthony Dip, Takuya Sugawara, Yasushi Akasaka, Takanou Kaitsuka, Tsunetoshi Arikado, and Masayuki Tomoyasu, International Symposium on VLSI-TSA, Hsinchu Taiwan, 2009

2008 

“High Mobility and Advanced Channels Materials”, Jungwoo Oh, Prashant Majhi, and Raj Jammy, IEEE International Conference on Advanced Thermal Processing of Semiconductors, Sep. Las Vegas, 2008.

“High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate”, Jungwoo Oh, Prashant Majhi, Chang Yong Kang, and Raj Jammy, International Conference on Solid State Devices and Materials (SSDM), Tsukuba Japan, 2008.

 “Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates”, Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sehoon Lee, Sanjay Banerjee, Hsing-Huang Tseng, and Raj Jammy, International Symposium on VLSI-TSA, Hsinchu Taiwan, 2008. 

2007 

"Formation of shallow junctions using Ge-Si heterostructures for high-mobility channel MOSFETs", Jungwoo Oh et.al., International Workshop on Junction Technology (IWJT), Kyoto, Japan, 2007.

“Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors”, Jungwoo Oh, Prashant Majhi, Hideok Lee, Sehoon Lee, Sanjay Banerjee, Pankaj Kalra, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy,  International Conference on Solid State Devices and Materials (SSDM), Tsukuba Japan, 2007. Invited

"Formation of shallow junctions using Ge-Si heterostructures for high-mobility channel MOSFETs", Jungwoo Oh, P. Majhi, H.-D. Lee, K.-T. Lee, W.-H. Choi, J.-W. Yang, C.-Y. Kang, H.R. Harris, S.C.Song, P. Kalra, S.H.Lee, S. Banerjee, B. H. Lee, H.-H. Tseng, and R. Jammy, International Workshop on Junction Technology (IWJT), Kyoto, Japan, 2007. Invited

“Band-Engineered Low PMOS VT with High-K/Metal Gate Including High Performance Dual Channel CMOS Integration”, H. Rusty Harris, Pankaj Kalra, Prashant Majhi, Muhammed Hussain, David Kelly, Jungwoo Oh, Dawei He, Casey Smith, Joel Barnett, Paul D. Kirsch, Gabriel Gebara, Jess Jur, Daniel Lichtenwalner, Abigail Lubow, T.P. Ma, Guangyu Sung, Scott Thompson, Byoung Hun Lee, Hsing-Huang Tseng and Raj Jammy, VLSI Tech., 2007.

“Characterization of Ultra Shallow S/D Junctions in Ge pMOSFETs”, Hi-Deok Lee, Kyong-Taek Lee, Jungwoo Oh, In-Shik Han, J.-W. Yang, C.Y. Kang, H.R. Harris, P. Kalra, P. Majhi, S.C. Song, R. Choi, B.H. Lee, Yoon-Ha Jeong, H-H. Tseng, and R. Jammy, Silicon Nanoelectronics Workshop (SNW), Kyoto, Japan, 2007

"Effect of Si cap layer on interface quality and NBTI in Ge-on-Si with HfSiO for High Mobility Channel pMOSFETs", Ooksang Yoo, Jungwoo oh, Kyung Seok Min, Chang Yong Kang, Kyong-Taek Leeb,MinKi Na, S.C. Song, R. Choi, B. H. Lee, P. Majhi, H-H Tseng and Hi-Deok Lee, ISAGST 2007 

2006 

“Fabrication of Ge MOS Capacitors on Si Substrates using Selective Ge Epitaxy and Surface Passivation Techniques”, Jungwoo Oh, et al, IEEE Semiconductor Interface Specialists Conference (SISC), CA 2006.

“Ge on Si Photodiodes for Si CMOS Monolithic Optical Receivers”, Joe C. Campbell, Zhihong Huang, and Jungwoo Oh (presenter), Electrochemical Society (ECS), 2006. Invited

"Effectiveness of SiGe Buffer Layers in Reducing Dark Current in Ge-on-Si Photodetectors”, Zhihong Huang; Ning Kong; Jungwoo Oh; Sanjay K. Banerjee, and Joe C. Campbell, TMS ELECTRONIC MATERIALS CONFERENCE, 2006

"Single Metal Gate with Dual Work Functions for FD-SOI and UTB Double Gate Technologies", Daniel Pham, Hongfa Luan, Kaveri Mathur, Barry Sassman, Billy Nguyen, George Brown, Ji-woon Yang, Jungwoo Oh, Peter Zeitzoff, Larry Larson, IEEE International SOI Conference , October, 2006 

2003 

"Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers", Jungwoo Oh and J. C. Campbell, IEEE LEOS, ThJ4, 2003.

"Gigahertz photodetectors fabricated in heteroepitaxial Ge-on-Si for use in integrated receivers", R. Jones, S. Thomas, S. Bharatan, R.Thoma, C. Jasper, T. Zirkle, G. Edwards, R. Liu, X. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H.von Kanel, Jungwoo Oh, Joe Campbell, American Physical Society, March Meeting, 2003. 

2002 

“Electrical activation of boron and phosphorus implanted single crystal germanium substrates”, C. Jasper, L. Rubin, C. Lindfors, Kevin Jones, and Jungwoo Oh, Ion Implantation Technology, IIT, 2002.

"Fabrication and Modeling of Gigahertz Photodetectors in Heteroepitaxial Ge-on-Si Using a Graded Buffer Layer Deposited by Low Energy Plasma Enhanced CVD", R.E. Jones, S.G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N.V. Edwards, R. Liu, X.D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. von Kanel, Jungwoo Oh, and J.C.Campbell, IEDM Tech. Dig.,pp. 793-796,2002.