Atomic layer deposition (ALD), BeO/β-Ga2O3, AI Semiconductors
Chemical imprinting, Metal-assisted chemical etching
Atomic layer deposition (ALD), Ferroelectrics, AI Semiconductors
Atomic layer deposition (ALD) BeO
Atomic layer deposition (ALD)
Atomic layer deposition (ALD) BeO
Atomic layer deposition (ALD)
Atomic layer deposition (ALD)
Chemical imprinting, Metal-assisted chemical etching
Atomic layer deposition (ALD)
Atomic layer deposition (ALD)
Yoonseo Jang, Ph.D. (장윤서)
Crystalline Beryllium Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition for Advanced Nanoelectronic Devices
Atomic Layer Deposition of Beryllium Oxide for 4H-SiCPower Devices and BeMgO Ferroelectric Memristors
Enhanced Dielectric Properties in Atomic Layer Deposition of Beryllium Oxide Thin Films Using the Discrete Feeding Method
Kyunghwan Kim, Ph.D. (김경환)
Ph.D. Dissertation: Direct Imprinting via Metal-assisted Chemical Etching for GaAs Nano and Microstructure Fabrication
Ph.D. Dissertation: Synthesis of Active-Site-Rich Nanostructured Mo2C Catalyst and Carbonized Wood-Based Porous Support for Improved Sustainability of Renewable Energy Conversion
Samsung Foundry (Aug. 2023)
M.S. Thesis: Enhanced Features of Fabricating 3-Dimensional Si Microstructures via Metal-Assisted Chemical Etching
Ph.D. Dissertation:Fabrication of 3D Si Nano and Micro Structures Using Chemical Imprinting Method with Catalytic Metal Stamp and Probe in Etch Bath
Ph.D. Dissertation: Antireflective Nanostructured GaAs Fabricated by Metal-Assisted Chemical Etching for Photoelectrochemical Water Splitting
Seungmin Lee, Ph.D. (이승민)
Samsung Electronics (Sep. 2019-)
Ph.D. Dissertation: Epitaxial Growth of Crystalline Beryllium Oxide Thin Film by Atomic Layer Deposition, and Its Application to High-Power Electronic Devices
Ph.D. Dissertation: Fabrication of GaAs Nano and Micro Structures by Metal-assisted Chemical Etching and Antireflective Properties for Photovoltaics
M.S. Thesis: Phosphorus implantation into in-situ doped Ge-on-Si with optimizing annealing temperature and implantation dose for high light-emitting efficiency
Samsung Electronics (Mar. 2019-)
Ph.D. Dissertation: Study on Au free Ohmic/Schottkhy contact and single crystalline oxide for enhancing Si CMOS compatibility in AlGaN/GaN-on-Si MOS-HEMT
Multidimensional Materials
Samsung Electronics (Sep. 2014-)
Post Doc. Research: SiGe Hetero-epitaxy & integration
Atomic layer deposition (ALD)
kalbi0705@yonsei.ac.kr
Seungyeop Sim, M.S. (심승엽)
Research Assistant (Dec. 2014-)
Atomic layer deposition (ALD), BeO interfacial layer/Laminate
park_sejun@yonsei.ac.kr
Atomic layer deposition (ALD), BeO/Ge semiconductor
jwoolee@yonsei.ac.kr