Enhancing Electrical and Interfacial Properties of BeO/4H-SiC Structures with SiO2 Interlayer
Sangoh Han, Dohwan Jung, Jonghyun Bae, Juyoung Chae, Haekyun Bong, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh*
Advanced Electronic Materials 11, e00469 (2025.10) DOI
Environment-Friendly Non-noble Metal-Assisted Anodic Etching of Ge without Acids and Oxidants
Haekyun Bong, Kyunghwan Kim, Jungwoo Oh*
ACS Sustainable Chemistry & Engineering 13, 25, 9753-9761 (2025.06) DOI
High-Performance Oxide Thin-Film Transistors with Atomic Layer Deposition-Grown HfO2/BeO Hetero-Dielectric
Sein Lee,† Yoonseo Jang,† Wooho Ham, Jonghyun Bae, Kyunghwan Kim, Jeong-Min Park, Junseo Lee,Min-Kyu Song, Dohwan Jung, Prakash R. Sultane, Jae-Hoon Han, Christopher W. Bielawski, Jungwoo Oh,* Jang-Yeon Kwon*
Nano Letters 25, 6975 (2025.04) DOI
Jonghyun Bae, Juyoung Chae, Yoonseo Jang, Dohwan Jung, Sangoh Han, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh
Ceramics International 51, 27864 (2025.08) DOI
Low-temperature thermal atomic layer deposition of beryllium oxide films using discrete feeding methods
Juyoung Chae, Jonghyun Bae, Yoonseo Jang, Dohwan Jung, Sangoh Han, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh
Modified Si Oxidation Behavior by Ultrathin Ni Catalyst Enabling Oxidant-Less Metal-Assisted Chemical Etching
Kyunghwan Kim, Sunhae Choi, Haekyun Bong, and Jungwoo Oh*
Small 21, 2409091 (2025.03) DOI Cover Image
Low-temperature crystallization of BeO-assisted polycrystalline germanium layer for monolithic 3D integration
Haekyun Bong‡, Yoonseo Jang‡, Dohwan Jung, Youngho Cho, Woong Choi, Donghwan Ahn, Prakash R. Sultane, Christopher W. Bielawski, Jungwoo Oh * ‡ These authors made equal contributions
Applied Surface Science 671,160723 (2024.10) DOI
Heterostructured Mo2N–Mo2C nanoparticles coupled with N-doped carbonized wood to accelerate the hydrogen evolution reaction
Jangwon Bang, In Kyu Moon, Young-Kwang Kim and Jungwoo Oh *
Small Structures (2023.08) DOI Cover Picture
Catalytic Nickel-silicide as an Alternative to Noble Metals in Metal-assisted Chemical Etching
K Kim,‡ S Choi,‡ H Bong, H Lee, M Kim, J Oh ‡ These authors made equal contributions
Three-dimensional multimodal porous graphene-carbonized wood for highly efficient solar steam generation
Sustainable Energy Technologies and Assessments 57, 103199 (2023.06) DOI
Energy band offsets of BeO dielectrics grown via atomic-layer deposition on ß-Ga2O3 substrates
D Jung, Y Jang, PR Sultane, CW Bielawski, J Oh*
Journal of Alloys and Compounds, 922, 166197 (2022.07) DOI
Polarization-Induced Two-Dimensional Electron Gas at BeO/ZnO Interface
Y Jang, D Jung, PR Sultane, CW Bielawski, J Oh*
Applied Surface Science, 154103 (2022.06) DOI
Phase-engineering terraced structure of edge-rich α-Mo2C for efficient hydrogen evolution reaction
J Bang, IK Moon, K Choi, J Oh*
Materials Today Energy, 100981 (2022.06) DOI
Low Temperature Growth of Beryllium Oxide Thin Films Prepared via Plasma Enhanced Atomic Layer Deposition
Y Jang, D Jung, PR Sultane, ES Larsen, CW Bielawski, J Oh*
Applied Surface Science 572, 151405 (2022.01) DOI
Fully wood-based green triboelectric nanogenerators
J Bang, IK Moon, YP Jeon, B Ki, J Oh*
Applied Surface Science 567, 150806 (2021.11) DOI
Mesoporous ZnCo2O4 nanowire arrays with oxygen vacancies and N-dopants for significant improvement of non-enzymatic glucose detection
DS Kim, IK Moon, JH Yang, K Choi, J Oh*, SW Kim*
Journal of Electroanalytical Chemistry 878, 114585 (2020.12) DOI
Enhanced photoelectrochemical efficiency and stability using nitrogen-doped TiO2 on a GaAs photoanode
Keorock Choi, Jangwon Bang, In kyu Moon, Kyunghwan Kim, Jungwoo Oh*
Journal of Alloys and Compounds 843, 155973 (2020.11) DOI
Chemical Carving Lithography with Scanning Catalytic Probes
Bugeun Ki, Kyunghwan Kim, Keorock Choi, Jungwoo Oh*
Scientific Reports 10, 13411 (2020.08) DOI
Ultralow Optical and Electrical Losses via Metal-assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes
Kyunghwan Kim, Bugeun Ki, Haekyun Bong, Keorock Choi, Jungwoo Oh*
Advanced Optical Materials 8 (15), 2000143 (2020.08) DOI
Three-Dimensional Porous Stretchable Supercapacitor with Wavy Structured PEDOT:PSS/Graphene Electrode
In Kyu Moon, Bugeun Ki, Jungwoo Oh*
Chemical Engineering Journal 392, 123794 (2020.07) DOI
Electrochemical Local Etching of Silicon in Etchant Vapor
Bugeun Ki, Keorock Choi, Kyunghwan Kim, Jungwoo Oh*
Nanoscale 12, 6411 – 6419 (2020.03) DOI
Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs
Seung Min Lee, Do Hwan Jung, Seonno Yoon, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Jungwoo Oh*
Applied surface science 505, 144107 (2020.03) DOI
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
Yoonseo Jang, Seung Min Lee, Do Hwan Jung, Jung Hwan Yum, Eric S.Larsen, Christopher W. Bielawski, Jungwoo Oh*
Solid-State Electronics 163, 107661 (2020.01) DOI
Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Jungwoo Oh*
ACS Nano 13 (11), 13465-13473 (2019.11) DOI
Crystal Properties of Atomic-Layer Deposited Beryllium Oxide on Crystal and Amorphous Substrates
Seung Min Lee, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Semiconductor Science and Technology 34, 115021 (2019.11) DOI
Polarization Modulation Effect of BeO on AlGaN/GaN High-Electron-Mobility Transistors
Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh*, Jae-Hyun Ryou*
Applied Physics Letters 115, 103502 (2019.09) DOI
Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation
Keorock Choi, Kyunghwan Kim, In Kyu Moon, Jangwon Bang, Jungwoo Oh
Nanoscale 11 (32), 15367-15373 (2019.08) DOI
Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation
Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Applied Surface Science 479, 803-809 (2019.06) DOI
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
S. M. Lee, J. H. Yum, E. S. Larsen, S. Shervin, W. Wang, J.‐H. Ryou, W. Bielawski, W. C. Lee, S. K. Kim, J. Oh*
Journal of the American Ceramic Society 102 (6), 3745—3752 (2019.06) DOI
Crystalline BeO grown on 4H-SiC via atomic layer deposition: Band alignment and interface defects
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Sang Yeon Lee, Hyungtak Seo, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
ACS Applied Electronic Materials 1 (4), 617-624 (2019.04) DOI
Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seungmin Lee, Jungwoo Oh*
ACS Applied Materials & Interfaces 11 (14), 13574–13580 (2019.04) DOI (Cover)
Atomic-layer deposition of crystalline BeO on SiC
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Weijie Wang, Jae-Hyun Ryou, Hyun-Seop Kim, Ho-Young Cha, Christopher W. Bielawski, Jungwoo Oh*
Applied Surface Science 469, 634-640 (2019.03) DOI
Evaluation of electroless Pt deposition and electron beam Pt evaporation on p-GaAs as a photocathode for hydrogen evolution
Keorock Choi, Kyunghwan Ki, In kyu Moon, Ilwhan Oh, Jungwoo Oh*
ACS Applied Energy Materials 2 (1), 770–776 (2019.01) DOI
An efficient amplification strategy for N-doped NiCo2O4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis
Keorock Choi, In Kyu Moon, Jungwoo Oh*
Journal of Materials Chemistry A 7 (4), 1468-1478 (2019.01) DOI (Inside Front Cover )
Remarkable Enhancement of Electrochemical Performance by the Oxygen Vacancy and Nitrogen Doping in ZnCo2O4 Nanowire Arrays
IK Moon, S Yoon, B Ki, K Choi, J Oh*
ACS Applied Energy Materials 1 (9), 4804-4813 (2018.09) DOI
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath
Bugeun Ki, Yunwon Song, Keorock Choi, Jung Hwan Yum, Jungwoo Oh*
ACS Nano 12 (1), 609-616 (2018.01) DOI
Epitaxial ZnO gate dielectric deposited by RF sputter for AlGaN/GaN high electron mobility transistors
Seonno Yoon, Seungmin Lee, Hyun-Seop Kim, Ho-Young Cha, Hi-Deok Lee, Jungwoo Oh*
Semiconductor Science and Technology 33 (1), 1-7 (2018.01) DOI
Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
ACS Applied Materials & Interfaces 9 (48), 47973-71979 (2017.12) DOI
Three-dimensional Flexible All-Organic Conductors for Multifunctional Wearable Applications
In Kyu Moon, Seonno Yoon, Hee Uk Lee, Seuong Wook Kim*, Jungwoo Oh*
ACS Applied Materials & Interfaces 9 (46), 40580-40592 (2017.11) DOI
3D Highly Conductive Silver Nanowire@ PEDOT: PSS Composite Sponges for Flexible Conductors and Their All‐Solid‐State Supercapacitor Applications
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
Advanced Materials Interfaces 4 (22), 1700860 (2017.11) DOI
Advanced Silicon-on-Insulators: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide
Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Scientific Reports 7 (1), 13205 (2017.10) DOI
Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers
Yunwon Song, Keorock Choi, Dong-Hwan Jun, Jungwoo Oh*
Optics Express 25(20), 23862-23872 (2017.10) DOI
Nano/Micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs
Kyunghwan Kim, Yunwon Song, Jungwoo Oh
Optics Letters 42 (16), 3105-3108 (2017.08) DOI
Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon
Keorock Choi, Yunwon Song, Bugeun Ki, Jungwoo Oh*
ACS Omega 2 (5), 2100-2105 (2017.05) DOI
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
Seonno Yoon, Seung Min Lee, Jeyoung Kim, Hi-Deok Lee, Ho-Young Cha, Jungwoo Oh*
Semiconductor Science and Technology 32 (3), (2017.03) DOI
Three-Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High Performance Flexible All‐Solid‐State Supercapacitors
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
Chemistry-A European Journal 23 (3), 597-604 (2017.01) DOI
Nano/micro double texturing antireflective subwavelength structures on inverted pyramids using metal-assisted chemical etching
Yunwon Song, Kyungwhan Kim, Keorock Choi, Bugeun Ki, Jungwoo Oh*
Solar Energy 135, 291-296 (2016.10) DOI
Phosphorus implantation into in-situ doped Ge-on-Si for high light-emitting efficiency
Jiwoong Baek, Bugeun Ki, Daeik Kim, Chulwon Lee, Donguk Nam, Yong-Hoon Cho, Jungwoo Oh
Optical Materials Express 6 (9), 2939-2949 (2016.09) DOI
Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection
In Kyu Moon, Bugeun Ki, Seonno Yoon, Jungwoo Oh*
Scientific Reports 6, 33525 (2016.09) DOI
Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates
Bugeun Ki, Kyung Ho Kim, Hyungjun Kim, Chulwon Lee, Yong-Hoon Cho, Jungwoo Oh*
Journal of Nanoscience and Nanotechnology 16 (5), 5239-5242 (2016.05) DOI
Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic Contacts to AlGaN/GaN Heterostructures
Seonno Yoon, Yunwon Song, Seung Min Lee, Hi-Deok Lee, Jungwoo Oh*
Semiconductor Science and Technology 31 (5), 055002 (2016.03) DOI
Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors
Seonno Yoon, Jangwon Bang, Hi-Deok Lee, Jungwoo Oh*
Microelectronic Engineering 151, 60-63 (2016.02) link
Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching
Solar Energy Materials and Solar Cells 144, 159-164 (2016.01) DOI
The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni-Pt salicidation FinFETs
Seung Min Lee, Hi-Deok Lee, Injo Ok, Jungwoo Oh*
Solid State Electronics 114, 167-170 (2015.12) DOI
Highly elastic and conductive N-doped monolithic graphene aerogels for multifunctional applications
In Kyu Moon, Seonno Yoon, Kyeong-Yong Chun, Jungwoo Oh*
Advanced Functional Materials 25 (45), 6976-6984 (2015.12) DOI (Inside Front Cover)
Microstructural Characterization of Au-free Si/Ti/Al/Cu Ohmic Contacts in an AlGaN/GaN Heterostructure
Seonno Yoon, Jangwon Bang, Yunwon Song, Jungwoo Oh*
Thin Solid Films 590, 335-339 (2015.08) DOI
Catalyst Feature Independent Metal-Assisted Chemical Etching of Silicon
Keorock Choi, Yunwon Song, Ilwhan Oh, Jungwoo Oh*
RSC Advances 5 (93), 76128-76132 (2015.05) DOI
Au‐free Si MOS compatible Ni/Ge/Al ohmic contacts to n+‐InGaAs
Jungwoo Oh*, Seonno Yoon, Bugeun Ki, Yunwon Song, Hi‐Deok Lee
Physica Status Solidi (A) 212 (4), 804-808 (2015.04) DOI
Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator
Bugeun Ki, Kyung Ho Kim, Jungwoo Oh*
ECS Solid State Letters 4 (1), P12-P14 (2015.01) DOI
Thermally Driven Metal-Assisted Chemical Etching of GaAs with In-Position and Out-of-Position Catalyst
Journal of Materials Chemistry A 2 (48), 20481–20485 (2014.12) DOI
In-Plane and Out-of-Plane Mass Transport in Metal-Assisted Chemical Etching of GaAs
Yunwon Song, Bugeun Ki, Keorock Choi, Ilwhan Oh, Jungwoo Oh*
Journal of Materials Chemistry A 2 (29), 11017-11021 (2014.08) DOI (Back Cover)
Ge Metal Oxide Semiconductor Field Effect Transistors with Optimized Si Cap and High-k Metal Gate Stacks
Current Applied Physics 14, S69-S73 (2014.03) DOI
Low Interface Defect Density of ALD BeO with Self-cleaning Reaction for InGaAs MOSFETs
H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd. W. Hudnall, J. Oh, P. Kirsch, R. Jammy, W. Y. Loh, W. Wang, G. Bersuker, C. W. Bielawski, S. K. Banerjee, J. C. Lee, and H. D. Lee
Applied Physics Letters 103, 223504 (2013.11) DOI
A Study of Capping Layers for Sulfur Monolayer Doping on III-V Junctions
J. H. Yum, H. S. Shin, J. Barnett, R. Hill, J. Oh, H. D. Lee, Todd. W. Hudnall, C. W. Bielawski, S. K. Banerjee, G. Bersuker, W. Y. Loh, and Wei-E Wang
Applied Physics Letters 101, 253514 (2012.12) DOI
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
Journal of Physics D-Applied Physics 45 435305 (2012.10) DOI
Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong-Soo Lee, Raj Jammy, Yoon-Ha Jeong
Microelectronic Engineering 112, 80-83 (2013) DOI
(Invited) Integration Challenges of III-V Materials in Advanced CMOS Logic
Richard J. Hill, Jeff Huang,Wei Yip Loh, Taewoo Kim, M. H. Wong, D. Veksler, T. H. Cunningham, R. Droopad, Jungwoo Oh, Chris Hobbs, Paul D. Kirsch and Raj Jammy,
ECS Transactions (2012) DOI
Quantification of interfacial state density (D-it) at the high-k/III-V interface based on Hall effect measurements
Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y. - T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., Oktyabrsky, S.
Journal of Applied Physics 112, 54504 (2012) DOI
Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs
Min-Ho Kang, Hong-Sik Shin, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Majhi, P., Jammy, R., Hi-Deok Lee, IEEE Transaction on Nanotechnology 11 4, 769-776 (2012) DOI
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal--Oxide--Semiconductor Field Effect Transistors
Shin, Hong-Sik, Oh, Se-Kyung, Kang, Min-Ho, Kwon, Hyuk-Min, Oh, Jungwoo, Majhi, Prashant, Jammy, Raj, Lee, Ga-Won, Lee, Hi-Deok
Japanese Journal of Applied Physics 51 2, 02BA02-02BA02-4 (2012) DOI
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
J. Phys. D: Appl. Phys. 45 435305 (2012) DOI
High Mobility CMOS Transistors on Si/SiGe Heterostructure Channels
Jungwoo Oh, Kanghoon Jeon, Se-Hoon Lee, Jeff Huang, PY Hung, Injo Ok, B.G. Min, Barry Sassman, Prashant Majhi, Paul Kirsch, Raj Jammy
Microelectronic Engineering 97, 26-28 (2012) DOI
Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability
J. H. Yum, G. Bersuker, J. Oh, and S. K. Banerjee
Applied Physics Letters , 053051 (2012) DOI
Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor
Won-Ho Choi, Jungwoo Oh, Ook-Sang Yoo, In-Shik Han, Min-Ki Na, Hyuk-Min Kwon, Byung-Suk Park, P. Majhi, H.-H. Tseng, R. Jammy, Hi-Deok Lee
Microelectronic Engineering 88 12, 3424-3427 (2011) DOI
Highly scaled (Lg ~ 56 nm) gate-last Si tunnel field-effect transistors
Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Tsu-Jae King Liu, Hsing-Huang Tseng, Wade Xiong, Prashant Majhi, Raj Jammy, Chenming Hu
Solid-State Electronics , 65-66 (2011) DOI
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
J. Oh, J. Huang, I. Ok, S.-H. Lee, B. Sassman, K. Jeon, W.-Y. Loh, D.-H. Ko, P. D. Kirsch, P. Majhi, and R. Jammy
Thin Solid Films , 520 442-444 (2011) DOI
Process driven oxygen redistribution and control in Si0.7Ge0.3/HfO2/TaN gate stack film systems
Patrick S. Lysaght, Joseph C. Woicik, Jeff Huang, Jungwoo Oh, Byoung-Gi Min, and Paul D. Kirsch
Applied Physics Letters 084107 (2011) DOI
Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate
Se-Hoon Lee, Prashant Majhi, Domingo A. Ferrer, Pui-Yee Hung, Jeff Huang, Jungwoo Oh, Wei-Yip Loh, Barry Sassman, Byoung-Gi Min, Hsing-Huang Tseng, Rusty Harris, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy, and Sanjay K. Banerjee
IEEE Transactions on Electron Devices 58 9, (2011) DOI
Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs
Min-Ho Kang, Hong-Sik Shin, Se-Kyung Oh, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Journal of Nanoscience and Nanotechnology 11 5633-5639 (2011) DOI
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
J. Oh, J. Huang, I. Ok, S.-H. Lee, P. Kirsch, R. Jammy
The IEICE (Institute of Electronics, Information and Communication Engineers) Transactions on Electronics E94-C 5, 712-716 (2011) DOI
ON-State Performance Enhancement and Channel Direction Dependent Performance of Biaxial Compressive Strained Si0.5Ge0.5 Quantum Well pMOSFET along <110> and <100> Channel Directions
Se-Hoon Lee, Aneesh Nainani, Jungwoo Oh, Kanghoon Jeon, Paul D. Kirsch, Prashant Majhi, Leonard F. Register, Sanjay K. Banerjee and Raj Jammy
IEEE Transactions on Electron Devices (2011) DOI
High-Mobility TaN/Al(2)O(3)/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer
M. Jamil, J.Oh, S. Kaur, P. Majhi, E. Tutuc and S. K. Banerjee
IEEE Electron Device Letters 31 11, 1208-1210 (2010) DOI
Trade-off Between Hot Carrier and Negative Bias Temperature Degradations in High Performance Si1-xGex pMOSFETs with High-k/Metal Gate Stack
Won-Ho Choi, Chang-Young Kang, Jung-Woo Oh, Byoung Hun Lee, Prashant Majhi, Hyuk-Min Kwon, Raj Jammy , and Hi-Deok Lee
IEEE Electron Device Letters 31 11, (2010) DOI
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs
Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Jeong-Soo Lee, Raj Jammy, and Yoon-Ha Jeong
IEEE Electron Device Letters (2010) DOI
Thermal desorption of Ge native oxides and loss of Ge from the surface
Jungwoo Oh and Joe Campbell
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 13 3, 185-188 (2010) DOI
Si tunnel transistors with a novel silicided source and 46mV/dec swing
Kanghoon Jeon, Wei-Yip Loh, Pratik Patel, Chang Yong Kang, Jungwoo Oh, Anupama Bowonder, Chanro Park, CS Park, Casey Smith, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tsu-Jae King Liu, Chenming Hu
2010 Symposium on VLSI Technology, 121-122 (2010) DOI
Prospect of tunneling green transistor for 0.1 V CMOS
Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu-Jae King Liu, Raj Jammy
2010 International Electron Devices Meeting, 16.1. 1-16.1. 4 (2010) DOI
Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
Ying-Ying Zhang, Soon-Yen Jung, Jungwoo Oh, Hong-Sik Shin, Se-Kyung Oh, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Japanese Journal of Applied Physics 49 055701 (2010) DOI
Novel Capacitorless Single-Transistor Charge-Trap DRAM (1T CT DRAM) Utilizing Electrons
M. Günhan Ertosun, Kwan-Yong Lim, Chanro Park, Jungwoo Oh, Paul Kirsch, and Krishna C. Saraswat
IEEE Electron Device Letters 31 405--407 (2010) DOI
Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs
Dong Chan Suh, Young Dae Cho, Sun Wook Kim, Dae-Hong Ko, Yongshik Lee, Mann-Ho Cho, and Jungwoo Oh
Applied Physics Letters 96 142112 (2010) DOI
Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, and Hi-Deok Lee
IEEE Transactions on Nanotechnology 9 2, (2010) DOI
Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation
Wei-Yip Loh, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung, Jungwoo Oh, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng, Jammy
R, IEEE Electron Device Letters 30 1140-1142 (2009) DOI
Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs
Ying-Ying Zhang, In-Shik Han, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jungwoo Oh, Prashant Majhi and Raj Jammy
Journal of the Korean Physical Society 55 1026-1030 (2009) DOI
Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si substrate
Min-Ho Kang, Ying-Ying Zhang, Kee-Young Park, Shi-Guang Li, Soon-Yen Jung, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy and Kun-Joo Park
Journal of the Korean Physical Society 55 1, 221-226 (2009) DOI
High Mobility SiGe p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate
J. Oh, P. Majhi, C. Y. Kang, R. Jammy R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, and M. Tomoyasu, Japanese Journal of
Applied Physics 48 4, 04C055 (2009) DOI
Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B.H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk-Min Kwon, P. Majhi, H-H Tseng, Raj Jammy, J.S. Wang, Hi-Deok Lee
Microelectronic Engineering 86 3, 259-262 (2009) DOI
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe
Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Majhi, P., Harris, H. R., Gilmer, D. C., Bersuker, G., Heh, D., Park, C. S., Park, C., Tseng, H.-H., Jammy, R.
IEEE Electron Device Letters 30 3, 285-287 (2009) DOI
Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Ni0.95Pd0.05 Alloy
Ying-Ying Zhang, Jungwoo Oh, In-Sik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
IEEE Transactions on Electron Devices 56 2, 348-353 (2009) DOI
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, and R. Jammy
IEEE Electron Device Letters 30 1, 54-56 (2009) DOI
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tae-Sung Bae, and Hi-Deok Lee
Electrochemical and Solid State Letters 12 H18 (2009) DOI
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Ying-Ying Zhang, Chel-Jong Choi, Jungwoo Oh, In-Shik Han, Shi-Guang Li, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Electrochemical and Solid State Letters 12 11, H402-H404 (2009) DOI
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Ook Sang Yooa, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang and Hi-Deok Lee
Materials Science and Engineering B 154-155 102-105 (2008) DOI
Effective surface passivation methodologies for high performance Ge pMOSFETs
H. J. Na and J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, and B. H. Lee, S. Rivillon and Y. J. Chabal, R. Choi
Applied Physics Letters 93 19, 192115 (2008) DOI
Demonstration of Lg ~55 nm PMOSFETs with Si/Si0.25Ge0.75/Si Channels with high Ion/Ioff (> 5×104) and controlled Short Channel Effect (SCE)
S.-H. Lee, P. Majhi, J. Oh, B. Sassman, C. Young, A. Bowonder, W.-Y. Loh, K. Choi, B.-J. Cho, H.-D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H.-H. Tseng, S. K. Banerjee and R. Jammy
IEEE Electron Device Letters 29 9, 1017-1019 (2008) DOI
Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices
J. Oh, P. Majhi, R. Jammy, R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, M. Tomoyasu
Microelectronic Engineering 85, 1804-1806 (2008) DOI
Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs
C. Y. Kang, J.-W. Yang, J. Oh, R. Choi, Y. Suh, H.C Floresca, J. Kim, M. Kim, B. Lee, H.-H. Tseng, R. Jammy
IEEE Electron Device Letters 29 5, 487-490 (2008) DOI
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Jungwoo Oh, P. Majhi, H.-H. Tseng, and R. Jammy, D. Kelly, S. Banerjee, J. Campbell
Thin Solid Films 516 12, 4107-4110 (2008) DOI
Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
Jungwoo Oh, P. Majhi, H. Lee, S. Banerjee, R. Harris, H.-H. Tseng, and R. Jammy
Japanese Journal of Applied Physics 2656-2659 (2008) DOI
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
Applied Physics Letters 92 032907 (2008) DOI
Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer
H.-S. Kim I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, Jack C. Lee, J. Oh, Prashant Majhi
Applied Physics Letters 92 102904 (2008) DOI
Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks
P. Majhi, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, S. Banerjee, W. Tsai1, H. Tseng, R. Jammy
IEEE Electron Device Letters 29 1, 99-10 (2008) DOI
Phase Separation of Ni Germanide Formed on a Ge-on-Si Structure for Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Tae-Sung Bae, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Ga-Won Lee, Jin-Suk Wang,Prashant Majhi, Byoung-Hun Lee, Hsing-Huang Tseng, Yoon-Ha Jeong and Hi-Deok Lee
Electrochemical and Solid State Letters 11 1, H1-H3 (2008) DOI
Improved electrical characteristics of Ge-on-Si field effect transistors with controlled Ge epitaxial layer thickness on Si substrates
Jungwoo Oh, Prashant Majhi, Hideok Lee, Ooksang Yoo, Sanjay Banerjee, Chang Yong Kang, Ji-Woon Yang, Rusty Harris, Hsing-Huang Tseng, and Raj Jammy
IEEE Electron Device Letters 28 11, 1044-1046 (2007) DOI
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs
D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy
Microelectronic Engineering 84, 2054-2057 (2007) DOI
Thermal stability of nanoscale Ge MOS capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers
Jungwoo Oh, P. Majhi, C. Y. Kang, J.-W. Yang, H.-H. Tseng, and R. Jammy
Applied Physics Letters 90 15, 202102 (2007) DOI
Improved Ge surface passivation with ultrathin SiOx enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
S. Joshi, C. Krug, D. Heh, H. J. Na, H. R. Harris, J. Oh, P. D. Kirsch, P. Majhi, B. H. Lee, H.-H. Tseng, R. Jammy, J. C. Lee, S. K. Banerjee
IEEE Electron Device Letters 28 4, 308-311 (2007) DOI
Effectiveness of SiGe buffer layers in reducing dark currents of Ge-on-Si photodetectors
Zhihong Huang, Jungwoo Oh, Sanjay Banerjee, and Joe Campbell
IEEE Journal of Quantum Electronics 43 , 238-242 (2007) DOI
Gate Stack Technology for Nano Scale Devices: Current and Future Challenges
Byoung Hun Lee, Jungwoo Oh, Hsing Huang Tseng, Rajarao Jammy, and Howard Huff
Materials Today 9 32-40 (2006) DOI
Back-side-illuminated high-speed Ge photodetector fabricated on Si substrate using thin SiGe buffer layers
Z. Huang Jungwoo Oh, and J. C. Campbell
Applied Physics Letters 85, 3286-3288 (2004) DOI
Thermal desorption of Ge native oxides and the loss of Ge from the surface
Jungwoo Oh and J. C. Campbell
Journal of Electronic Materials 33, 364-367 (2004) DOI
Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers
Jungwoo Oh, S. K. Banerjee, and J. C. Campbell
IEEE Photonics Technology Letters 16, 581-583 (2004) DOI
Interdigitated Ge p-i-n Photodetectors fabricated on Si substrate using graded SiGe buffer layers
Jungwoo Oh, J. C. Campbell, S. Thomas, S. Bharatan, R. Thoma, C. Jasper, R. E. Jones, and T. E. Zirkle
IEEE Journal of Quantum Electronics 38 1238-1241 (2002) DOI
High-speed interdigitated Ge PIN photodetectors
Jungwoo Oh, S. Csutak, and J. C. Campbell
IEEE Photonics Technology Letters 14 369-371 (2002) DOI
AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
J-L. Lee, Y. T. Kim, Jung-Woo Oh, B.-T. Lee
Japanese Journal of Applied Physics 40 , 1188-1193 (2001) DOI
Selective Wet Etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT
J-L. Lee, E.-A. Moon, Jung-Woo Oh
Electronic Letters 36, 1974-1975 (2000) DOI
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
Applied Physics Letters 74 19, 2866-2868 (1999) DOI