Environment-Friendly Non-noble Metal-Assisted Anodic Etching of Ge without Acids and Oxidants
Haekyun Bong, Kyunghwan Kim, and Jungwoo Oh*
ACS Sustainable Chemistry & Engineering 13, 25, 9753-9761 (2025.06) DOI
High-Performance Oxide Thin-Film Transistors with Atomic Layer Deposition-Grown HfO2/BeO Hetero-Dielectric
Sein Lee,† Yoonseo Jang,† Wooho Ham, Jonghyun Bae, Kyunghwan Kim, Jeong-Min Park, Junseo Lee,Min-Kyu Song, Dohwan Jung, Prakash R. Sultane, Jae-Hoon Han, Christopher W. Bielawski, Jungwoo Oh,* Jang-Yeon Kwon*
Crystal Properties of Atomic-Layer Deposited Beryllium Oxide on Crystal and Amorphous Substrates
Seung Min Lee, Yoonseo Jang, Jung Hwan Yum, Eric S. Larsen, Woo Chul Lee, Seong Keun Kim, Christopher W. Bielawski, Jungwoo Oh*
Semiconductor Science and Technology 34, 115021 (2019.11) DOI
Polarization Modulation Effect of BeO on AlGaN/GaN High-Electron-Mobility Transistors
Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh*, Jae-Hyun Ryou*
Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation
Seonno Yoon, Seung Min Lee, Jung Hwan Yum, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
Applied Surface Science 479, 803-809 (2019.06) DOI
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
S. M. Lee, J. H. Yum, E. S. Larsen, S. Shervin, W. Wang, J.‐H. Ryou, W. Bielawski, W. C. Lee, S. K. Kim, J. Oh*
Journal of the American Ceramic Society 102 (6), 3745—3752 (2019.06)DOI
Crystalline BeO grown on 4H-SiC via atomic layer deposition: Band alignment and interface defects
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Sang Yeon Lee, Hyungtak Seo, Christopher W. Bielawski, Hi-Deok Lee, Jungwoo Oh*
ACS Applied Electronic Materials 1 (4), 617-624 (2019.04) DOI
Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching
Kyunghwan Kim, Bugeun Ki, Keorock Choi, Seungmin Lee, Jungwoo Oh*
Seung Min Lee, Yoonseo Jang, Jongho Jung, Jung Hwan Yum, Eric S. Larsen, Weijie Wang, Jae-Hyun Ryou, Hyun-Seop Kim, Ho-Young Cha, Christopher W. Bielawski, Jungwoo Oh*
Applied Surface Science 469, 634-640 (2019.03) DOI
Evaluation of electroless Pt deposition and electron beam Pt evaporation on p-GaAs as a photocathode for hydrogen evolution
Keorock Choi, Kyunghwan Ki, In kyu Moon, Ilwhan Oh, Jungwoo Oh*
ACS Applied Energy Materials 2 (1), 770–776 (2019.01) DOI
An efficient amplification strategy for N-doped NiCo2O4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis
Keorock Choi, In Kyu Moon, Jungwoo Oh*
Journal of Materials Chemistry A 7 (4), 1468-1478 (2019.01)DOI (Inside Front Cover )
Remarkable Enhancement of Electrochemical Performance by the Oxygen Vacancy and Nitrogen Doping in ZnCo2O4 Nanowire Arrays
IK Moon, S Yoon, B Ki, K Choi, J Oh*
ACS Applied Energy Materials 1 (9), 4804-4813 (2018.09) DOI
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors
Seonno Yoon, Seung Min Lee, Jeyoung Kim, Hi-Deok Lee, Ho-Young Cha, Jungwoo Oh*
Semiconductor Science and Technology 32 (3), (2017.03) DOI
Three-Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High Performance Flexible All‐Solid‐State Supercapacitors
In Kyu Moon, Seonno Yoon, Jungwoo Oh*
Chemistry-A European Journal 23 (3), 597-604 (2017.01) DOI
Nano/micro double texturing antireflective subwavelength structures on inverted pyramids using metal-assisted chemical etching
Yunwon Song, Kyungwhan Kim, Keorock Choi, Bugeun Ki, Jungwoo Oh*
Low Interface Defect Density of ALD BeO with Self-cleaning Reaction for InGaAs MOSFETs
H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd. W. Hudnall, J. Oh, P. Kirsch, R. Jammy, W. Y. Loh, W. Wang, G. Bersuker, C. W. Bielawski, S. K. Banerjee, J. C. Lee, and H. D. Lee
A Study of Capping Layers for Sulfur Monolayer Doping on III-V Junctions
J. H. Yum, H. S. Shin, J. Barnett, R. Hill, J. Oh, H. D. Lee, Todd. W. Hudnall, C. W. Bielawski, S. K. Banerjee, G. Bersuker, W. Y. Loh, and Wei-E Wang
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants
Young-Chul Byun, Chandreswar Mahata, Chee-Hong An, Jungwoo Oh, Rino Choi and Hyoungsub Kim
Journal of Physics D-Applied Physics 45 435305 (2012.10) DOI
Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs
Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong-Soo Lee, Raj Jammy, Yoon-Ha Jeong
(Invited) Integration Challenges of III-V Materials in Advanced CMOS Logic
Richard J. Hill, Jeff Huang,Wei Yip Loh, Taewoo Kim, M. H. Wong, D. Veksler, T. H. Cunningham, R. Droopad, Jungwoo Oh, Chris Hobbs, Paul D. Kirsch and Raj Jammy,
Quantification of interfacial state density (D-it) at the high-k/III-V interface based on Hall effect measurements
Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y. - T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., Oktyabrsky, S.
Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs
Min-Ho Kang, Hong-Sik Shin, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Majhi, P., Jammy, R., Hi-Deok Lee, IEEE Transaction on Nanotechnology 11 4, 769-776 (2012) DOI
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal--Oxide--Semiconductor Field Effect Transistors
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
J. Oh, J. Huang, I. Ok, S.-H. Lee, B. Sassman, K. Jeon, W.-Y. Loh, D.-H. Ko, P. D. Kirsch, P. Majhi, and R. Jammy
Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate
Se-Hoon Lee, Prashant Majhi, Domingo A. Ferrer, Pui-Yee Hung, Jeff Huang, Jungwoo Oh, Wei-Yip Loh, Barry Sassman, Byoung-Gi Min, Hsing-Huang Tseng, Rusty Harris, Gennadi Bersuker, Paul D. Kirsch, Raj Jammy, and Sanjay K. Banerjee
IEEE Transactions on Electron Devices 58 9, (2011) DOI
Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs
Min-Ho Kang, Hong-Sik Shin, Se-Kyung Oh, Jung-Ho Yoo, Ga-Won Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Journal of Nanoscience and Nanotechnology 11 5633-5639 (2011) DOI
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
J. Oh, J. Huang, I. Ok, S.-H. Lee, P. Kirsch, R. Jammy
The IEICE (Institute of Electronics, Information and Communication Engineers) Transactions on Electronics E94-C 5, 712-716 (2011) DOI
ON-State Performance Enhancement and Channel Direction Dependent Performance of Biaxial Compressive Strained Si0.5Ge0.5 Quantum Well pMOSFET along <110> and <100> Channel Directions
Se-Hoon Lee, Aneesh Nainani, Jungwoo Oh, Kanghoon Jeon, Paul D. Kirsch, Prashant Majhi, Leonard F. Register, Sanjay K. Banerjee and Raj Jammy
Journal of the Korean Physical Society 55 1026-1030 (2009) DOI
Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si substrate
Min-Ho Kang, Ying-Ying Zhang, Kee-Young Park, Shi-Guang Li, Soon-Yen Jung, Ga-Won Lee, Jin-Suk Wang, Hi-Deok Lee, Jung-Woo Oh, Prashant Majhi, Raj Jammy and Kun-Joo Park
Journal of the Korean Physical Society 55 1, 221-226 (2009) DOI
High Mobility SiGe p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Epitaxially Grown on Si (100) Substrates with HfSiO2 High-k Dielectric and Metal Gate
J. Oh, P. Majhi, C. Y. Kang, R. Jammy R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, and M. Tomoyasu, Japanese Journal of
Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Ook Sang Yoo, Jungwoo Oh, Kyung Seok Min, Chang Yong Kang, B.H. Lee, Kyong Taek Lee, Min Ki Na, Hyuk-Min Kwon, P. Majhi, H-H Tseng, Raj Jammy, J.S. Wang, Hi-Deok Lee
Microelectronic Engineering 86 3, 259-262 (2009) DOI
Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directly on SiGe
Huang, J., Kirsch, P. D., Oh, J., Lee, S. H., Majhi, P., Harris, H. R., Gilmer, D. C., Bersuker, G., Heh, D., Park, C. S., Park, C., Tseng, H.-H., Jammy, R.
IEEE Electron Device Letters 30 3, 285-287 (2009) DOI
Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge-on-Si Substrate Utilizing Ni0.95Pd0.05 Alloy
Ying-Ying Zhang, Jungwoo Oh, In-Sik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
IEEE Transactions on Electron Devices 56 2, 348-353 (2009) DOI
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
J.-W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H.-H. Tseng, and R. Jammy
IEEE Electron Device Letters 30 1, 54-56 (2009) DOI
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Ying-Ying Zhang, Jungwoo Oh, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Tae-Sung Bae, and Hi-Deok Lee
Electrochemical and Solid State Letters 12 H18 (2009) DOI
Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation
Ying-Ying Zhang, Chel-Jong Choi, Jungwoo Oh, In-Shik Han, Shi-Guang Li, Kee-Young Park, Hong-Sik Shin, Ga-Won Lee, Jin-Suk Wang, Prashant Majhi, Raj Jammy, and Hi-Deok Lee
Electrochemical and Solid State Letters 12 11, H402-H404 (2009) DOI
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Ook Sang Yooa, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang and Hi-Deok Lee
Materials Science and Engineering B 154-155 102-105 (2008) DOI
Effective surface passivation methodologies for high performance Ge pMOSFETs
H. J. Na and J. C. Lee, D. Heh, P. Sivasubramani, P. D. Kirsch, J. W. Oh, P. Majhi, and B. H. Lee, S. Rivillon and Y. J. Chabal, R. Choi
Demonstration of Lg ~55 nm PMOSFETs with Si/Si0.25Ge0.75/Si Channels with high Ion/Ioff (> 5×104) and controlled Short Channel Effect (SCE)
S.-H. Lee, P. Majhi, J. Oh, B. Sassman, C. Young, A. Bowonder, W.-Y. Loh, K. Choi, B.-J. Cho, H.-D. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H.-H. Tseng, S. K. Banerjee and R. Jammy
IEEE Electron Device Letters 29 9, 1017-1019 (2008) DOI
Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices
J. Oh, P. Majhi, R. Jammy, R. Joe, T. Sugawara, Y. Akasaka, T. Kaitsuka, T. Arikado, M. Tomoyasu
Microelectronic Engineering 85, 1804-1806 (2008) DOI
Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs
C. Y. Kang, J.-W. Yang, J. Oh, R. Choi, Y. Suh, H.C Floresca, J. Kim, M. Kim, B. Lee, H.-H. Tseng, R. Jammy
IEEE Electron Device Letters 29 5, 487-490 (2008) DOI
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation
Jungwoo Oh, P. Majhi, H.-H. Tseng, and R. Jammy, D. Kelly, S. Banerjee, J. Campbell
IEEE Electron Device Letters 28 11, 1044-1046 (2007) DOI
Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs
D. Q. Kelly, S. Lee, P. Kalra, R. Harris, J. Oh, P. Kirsch, S. K. Banerjee, P. Majhi, H. Tseng, R. Jammy
Microelectronic Engineering 84, 2054-2057 (2007) DOI
Thermal stability of nanoscale Ge MOS capacitors with ZrO2 high-k gate dielectrics on Ge epitaxial layers
Jungwoo Oh, P. Majhi, C. Y. Kang, J.-W. Yang, H.-H. Tseng, and R. Jammy