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The unique properties of BeO, a refractory oxide with a high melting point, include its high thermal conductivity and large bandgap energy. Among the insulators, diamond is the only material that has a higher thermal conductivity than BeO. We demonstrated the heteroepitaxial growth of BeO on vairous semiconductor substrates (Si, GaN, SiC, Ga2O3) using atomic layer deposition (ALD) for the first time.
The unique properties of BeO, a refractory oxide with a high melting point, include its high thermal conductivity and large bandgap energy. Among the insulators, diamond is the only material that has a higher thermal conductivity than BeO. We demonstrated the heteroepitaxial growth of BeO on vairous semiconductor substrates (Si, GaN, SiC, Ga2O3) using atomic layer deposition (ALD) for the first time.
Fig. (a) Schematic of MOS capacitors with BeO gate dielectrics fabricated on AlGaN/GaN HEMT substrates. (b) C–V curves in frequency range of 30 kHz–1 MHz of 16-nm BeO and GaN/AlGaN heterostructure
Fig. (a) Schematic of MOS capacitors with BeO gate dielectrics fabricated on AlGaN/GaN HEMT substrates. (b) C–V curves in frequency range of 30 kHz–1 MHz of 16-nm BeO and GaN/AlGaN heterostructure
Fig. Atomic configurations of (a) BeO (001) and (b) GaN (001) planes. (c) Overlays of atomic positions in two dimensions and (d) three dimensions, showing DME of Be-on-GaN with 5/6 and 6/7 repetition.
Fig. Atomic configurations of (a) BeO (001) and (b) GaN (001) planes. (c) Overlays of atomic positions in two dimensions and (d) three dimensions, showing DME of Be-on-GaN with 5/6 and 6/7 repetition.
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