Domestic

2022

[2] Hagyoul Bae, "Analysis of defect/trap states in future 3D Gate-All-Around(GAA) FETs," IEIE, vol. 49, no. 7, pp. 26-32, Jul 2022. [Link]

       (저주파잡음특성을 이용한 3차원 반도체소자의 결함 분석, 배학열)

[1] Ji-Yeong Yeon, Khwang-Sun Lee, Sung-Su Yoon, Ju-Won Yeon, Hagyoul Bae*, Jun-Young Park*, Device optimization of bulk FinFET with vacuum gate spacer and    

       the suppression of short-channel effects, IEIE, 2022 (Just Accepted) [Link]