Domestic

Domestic

[40] Hongseung Lee, Jaewook Yoo, Hyeonjun Song, Soyeon Kim, Seongbin Lim, SeohyeonPark, Minah Park, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, and Hagyoul                Bae*, "Low-Freqeuncy Noise and DC I-V Characterization for Irradiation-Induced Degradation and Trap Behaviors in a-IGZO TFTs," The 31st Korean                                      Conference on Semiconductors, Jan. 2024.

[39] Seongbin Lim, Hyeonjun Song, Jaewook Yoo, Hongseung Lee, Soyeon Kim, Jo Hak Jeong, Kiyoung Lee, Hyeon-Sik Jang, Minah Park, Seohyeon Park, Keun Heo,                Jun-Yooung Park, Yoon Kyeung Lee and Hagyoul Bae*, "Quantitative Analysis based on Subgap Density-of-States (DOS) for Deuterium Annealing Effect in a-                   IGZO TFTs by TCAD and Experimental Characterization," The 31st Korean Conference on Semiconductors, Jan. 2024.

[38] Soyeon Kim, Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Minah Park, Seohyeon Park and Hagyoul Bae*, "Characterization of Bulk Trap Density           Using Fully I-V-based Optoelectronic Differential Ideality Factor in Multi-Layer MoS2 FET," The 31st Korean Conference on Semiconductors, Jan. 2024.

[37] Minah Park, Jaewook Yoo, Hyeonjun Song, Soyeon Kim, Hongseung Lee, Seongbin Lim, Seohyeon Park, Peide D. Ye, and Hagyoul Bae*, "P-Type Copper Oxide-                 based Solar-blind Ultraviolet (UV) Photodetector Capable of Low-Photocurrent Operation with Plasma-Enhanced Atomic Layer Deposition (PEALD)," The 31st            Korean Conference on Semiconductors, Jan. 2024.

[36] Minah Park, Jaewook Yoo, Hyeonjun Song, Soyeon Kim, Hongseung Lee, Seongbin Lim, Seohyeon Park, Yoon Kyeung Lee, Keun Heo, and Hagyoul Bae*, "Rapid                Thermal Annealing (RTA) to Recover the Radiation Damage of a-IGZO TFTs for Highly Reliable DRAM Cell Transistors," The 31st Korean Conference on                              Semiconductors, Jan. 2024.

[35] Seohyeon Park, Jaewook Yoo, Hyeonjun Song, Soyeon Kim, Hongseung Lee, Seongbin Lim, Minah Park, Peide D. Ye, and Hagyoul Bae*, "First Demonstration of                HZO/β-Ga2O3 Ferroelectric FinFET for High-Performance Power Devices," The 31st Korean Conference on Semiconductors, Jan. 2024.

[34] Seohyeon Park, Jaewook Yoo, Hyeonjun Song, Soyeon Kim, Hongseung Lee, Seongbin Lim, Minah Park, Peide D. Ye, and Hagyoul Bae*, "Back-End-of-Line                           Compatible Al2O3 Passivated p-Type Copper Oxide Thin Film Transistors with Enhanced Current On/Off Ratio," The 31st Korean Conference on                                             Semiconductors, Jan. 2024.

[33] Jae Wook Yoo, Ji-Man Yoo, Hong Seung Lee, HyeonJun Song, Seongbin Lim, Jo-Hak Jung, Ki-Hyun, Keun Heo, Yang-Kyu Choi, and Hagyoul Bae, “Modeling and               characterization of contact and spreading resistances in vertical 3D silicon FET with asymmetric structure,” The 30th Korean Conference on  Semiconductors,            Feb. 2021.

[32] Jae Wook Yoo, Hong Seung Lee, HyeonJun Song, Seongbin Lim, Jun-Young Park, Yang-Kyu Choi, and Hagyoul Bae, “Investigation for spatial distribution of oxide            trap density using low-frequency noise in beta-Ga2O3 FinFET,” The 30th Korean Conference on  Semiconductors, Feb. 2021.

[31] 오세인, 김현규, 윤봉노, 남은서, 배학열, 김기현*, “하이브리드 Schottky-Ohmic 후면전극을 통한 실리콘 모래시계 나노선 포토다이오드의 광검출 특성 향상 연구,”            The 30th Korean Conference on Semiconductors, Feb. 2023.

[30] Dongwoo Cha, Hagyoul Bae, and Jun-Young Park *, “A Study on Impact of Oxide Layers in Punch-Through Annealing for Low Power Applications,” The 28th 

          Korean Conference on  Semiconductors, Feb. 2021.

[29] Daehan Jung, Dae-Hwan Yun, Hagyoul Bae, and Jun-Young Park *, “Demonstration of multi-layered macaroni filler for improvement of erase efficiency in 3-D V-

          NAND,” The 28th Korean Conference on Semiconductors, Feb. 2021.

[28] Ik Kyeong Jin†, Hagyoul Bae† (co-1st author), Jun-Young Park, Choong-Ki Kim, Seong-Yeon Kim, Do-Hyun Kim, Yun-Ik Son, Jae-Hoon Lee, Yong-Taik Kim, Seong-

          Wan Ryu, and Yang-Kyu Choi*, “A study of radiation immunity and damage recovery in SiGe pMOSFET,” The 25th Korean Conference on Semiconductors, Feb. 

          2018 (Best Paper Award-Oral Presentation).

[27] Myungsoo Seo, Byung-Hyun Lee, Hagyoul Bae, Gun-Hee Kim, and Yang-Kyu Choi*, “Separate extraction of source and drain resistances in vertically integrated 

          junctionless nanowire field effect transistors,” The 24th Korean Conference on Semiconductors, Feb. 2017. (Best Poster Paper Award)

[26] Jaewon Kim, Heesung Lee, Hagyoul Bae, Ogyun Seok, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of heterojunction interface traps 

          in AlGaN/GaN HEMTs through sub-bandgap photonic response and subthreshold ideality factor,” The 24th Korean Conference on Semiconductors, Feb. 2017.

[25] Tewook Bang, Hagyoul Bae, Choong-Ki Kim, Jun-Young Park, Dae-Chul Ahn, Gun-Hee Kim, Yun-Ik Son, Jae-Hoon Lee, Yong-Taik Kim, and Yang-Kyu Choi*, 

          “Improved split C-V technique for accurate extraction of mobility by considering effective inversion charges in p-channel SiGe MOSFET,” The 23th Korean 

          Conference on Semiconductors, Feb. 2016.

[24] Tewook Bang, Ui-Sik Jeong, Choong-Ki Kim, Hagyoul Bae, Gun-Hee Kim, Da-Jin Kim, and Yang-Kyu Choi*, “Low-frequency noise of extremely scaled SiNW-

          based GAA JL flash memory according to NW width,” The 23th Korean Conference on Semiconductors, Feb. 2016.

[23] Gun-Hee Kim, Hagyoul Bae, Yong-Yoon Kim, Choong-Ki Kim, Tewook Bang, Yoon-Ik Son, and Yang-Kyu Choi*, “Separate extraction of source and drain 

          resistances using double sweep saturation current-voltage characteristic in SiGe pMOSFET,” The 23th Korean Conference on Semiconductors, Feb. 2016.

[22] Hyunjun Choi, Hagyoul Bae, Jaeyeop Ahn, Jun Seok Hwang, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Capacitance-voltage 

          technique for extraction of intrinsic subgap DOS in AOS TFTs with bias-dependent channel conduction factor model,” The 21th Korean Conference on 

          Semiconductors, Feb. 2014.

[21] Jaeyeop Ahn, Hagyoul Bae, Hyunjun Choi, Jun Seok Hwang, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “A novel characterization 

          technique for location of laterally distributed grain boundary in polycrystalline silicon thin-film transistors,” The 21th Korean Conference on Semiconductors, 

          Feb. 2014.

[20] Jun Seok Hwang, Hagyoul Bae, Hyunjun Choi, Jaeyeop Ahn, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “A dual sweep transfer curve 

          technique for separate extraction of source and drain resistances in advanced FETs without substrate contacts,” The 21th Korean Conference on 

          Semiconductors, Feb. 2014.

[19] Jungmin Lee, Jun Seok Hwang, Jaeyeop Ahn, Hyunjun Choi, Hagyoul Bae, Sungwoo Jun, Jinsu Yoon, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, 

          “Characterization of interface states based on the sub-bandgap photonic subthreshold current in MOSFETs,” The 21th Korean Conference on Semiconductors, 

          Feb. 2014.

[18] Hagyoul Bae, Hyunjun Choi, Saeroonter Oh, Dae Hwan Kim, Jonguk Bae, Sungwoo Jun, Choon Hyeong Jo, Jaewook Lee, Yun Hyeok Kim, Seonwook Hwang, 

          Euiyeon Hong, Hyojoon Seo, Jun Seok Hwang, Jaeyeop Ahn, Dae Geun Kim, Dae Hwan Kim, and Dong Myong Kim*, “Monochromatic photonic capacitance-

          voltage technique for donor- and acceptor-like density-of-states over the full-energy range in amorphous TFTs,” The 20th Korean Conference on 

          Semiconductors, Feb. 2013. (Oral Presentation)

[17] Hagyoul Bae, Hyunjun Choi, Saeroonter Oh, Dae Hwan Kim, Jonguk Bae, Euiyeon Hong, Hyojoon Seo, Woojoon Kim, Inseok Hur, Jaehyeong Kim, Won Hee Lee, 

          Mihee Uhm, Dong Jae Shin, Kyung Min Lee, Hyeongjung Kim, Dae Hwan Kim, and Dong Myong Kim*, “Photonic capacitance-voltage technique for intrinsic 

          subgap-DOS considering the parasitic capacitance in amorphous oxide semiconductors,” The 20th Korean Conference on Semiconductors, Feb. 2013. (Oral 

          Presentation)

[16] Hyojoon Seo, Hagyoul Bae, Chunhyung Jo, Euiyeon Hong, Hyunjun Choi, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of free electron-

          deembedded subgap density-of-states in a-IGZO TFTs,” The 20th Korean Conference on Semiconductors, Feb. 2013.

[15] Jaeman Jang, Jun Seok Hwang, Jaeyeop Ahn, Euiyeon Hong Hyojoon Seo, Hagyoul Bae, Jieun Lee, Dae Hwan Kim, and Dong Myong Kim*, “Extraction of 

          interface traps in MOS capacitor systems using differential substrate capacitance method,” The 20th Korean Conference on Semiconductors (Chip Design 

          Contest), Feb. 2013.

[14] Yun Hyeok Kim, Dae Geun Kim, Inrok Hwang, Jaeman Jang, Hagyoul Bae, Jaewook Lee, Sungwoo Jun, Choon Hyeong Jo, Hyunjun Choi, Sunwoong Choi, 

          Kyeong-Sik Min, Bae Ho Park, Dong Myong Kim, and Dae Hwan Kim*, “Simple empirical I-V model for memristive switches and its application for SPICE 

          simulation,” The 20th Korean Conference on Semiconductors, Feb. 2013.

[13] Won Hee Lee, Jin-Moo Lee, Mihee Uhm, Jieun Lee, Jung Han Lee, Hagyoul Bae, Euiyeon Hong, Seonwook Hwang, Yun Hyeok Kim, Bong Sik Choi, Byung-Gook 

          Park, Dong Myong Kim, Yong-Joo Jeong, and Dae Hwan Kim*, “Characterization of subthreshold slope degradation in CMOS-based silicon nanowire

          biosensors,” The 20th Korean Conference on Semiconductors, Feb. 2013.

[12] Seonwook Hwang, Jieun Lee, Won Hee Lee, Mihee Uhm, Bong sik Choi, Hagyoul Bae, Sewook Oh, Yejin Kim, Hyun Ho Lee, Dong Myong Kim, and Dae Hwan 

          Kim*, “Detection of a specific target DNA through the threshold voltage shift in silicon nanowire FET-based biosensor,” The 20th Korean Conference on 

          Semiconductors, Feb. 2013.

[11] Chunhyung Jo, Sungwoo Jun, Woojoon Kim, Inseok Hur, Jaeman Jang, Jaeyeong Kim, Jaewook Lee, Yun Hyeok Kim, Hagyoul Bae, Dong Jae Shin, Kyung Min

          Lee, Hyeongjung Kim, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of negative bias stress instability mechanisms in amorphous InGaZnO thin film 

          transistors,” The 20th Korean Conference on Semiconductors, Feb. 2013.

[10] Hagyoul Bae, Dongsik Kong, Ja Sun Shin, Dayeon Yun, Euiyeon Hong, Hyojoon Seo, Hyunjun Choi, Jieun Lee, Hyun-Kwang Jung, Minkyung Bae, Yongsik Kim, 

          Woojoon Kim, Dae Hwan Kim, and Dong Myong Kim*, “Active layer thickness-dependent parasitic resistance effect in low frequency noise with subgap density-

          of-states in amorphous Indium-Gallium-Zinc-Oxide TFTs,” The 19th Korean Conference on Semiconductors, Feb. 2012. (Oral Presentation)

[9] Inseok Hur, Hagyoul Bae, Minkyung Bae, Yongsik Kim, Dongsik Kong, Hyunkwang Jeong, Jaeman Jang, Jaehyeong Kim, Woojoon Kim, Yun Hyeok Kim, Jaewook 

       Lee, Sungwoo Jun, Choon Hyeong Jo, Dong Myong Kim, and Dae Hwan Kim*, “Characterization of intrinsic field effect mobility in a-IGZO thin-film transistors 

       through the de-embedding the parasitic source and drain resistance effects,” The 19th Korean Conference on Semiconductors, Feb. 2012.

[8] Ja Sun Shin, Hagyoul Bae, Euiyoun Hong, Jaeman Jang, Daeyoun Yun, Hyojoon Seo, Hyunjun Choi, Dae Hwan Kim, and Dong Myong Kim*, “Separate extraction 

        technique of gate, source, drain, and substrate resistances in individual MOSFET combining I-V and C-V characteristics,” The 19th Korean Conference on 

        Semiconductors, Feb. 2012.

[7] Ja Sun Shin, Hyunjun Choi, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Euiyoun Hong, Hyojoon Seo, Dae Hwan Kim, and Dong Myong Kim*, “Si/SiGe vertical gate 

       DHBT (verDHBT)-based 1T-DRAM cell for improved retention characteristics with a large hysteresis,” The 19th Korean Conference on Semiconductors, Feb. 

       2012.

[6] Hagyoul Bae, Sungchul Kim, Minkyung Bae, Hyojoon Seo, Won Hee Lee, Mihee Uhm, Dae Hwan Kim, and Dong Myong Kim*, “Separate extraction of source and 

        drain resistances in amorphous Indium-Gallium-Zinc-Oxide thin film transistor with parallel mode C-V technique,” The 18th Korean Conference on 

        Semiconductors, Feb. 2011. (Poster)

[5] Hagyoul Bae, Jaeman Jang, Ja Sun Shin, Daeyoun Yun, Jieun Lee, Hyeri Jang, Euiyoun Hong, Dae Hwan Kim, and Dong Myong Kim*, “Modeling and separate 

        extraction of gate bias- and channel length-dependent intrinsic and extrinsic resistance elements in LDD MOSFETs,” The 18th Korean Conference on 

        Semiconductors, Feb. 2011. (Oral Presentation)

[4] Ja Sun Shin, Hagyoul Bae, Jaeman Jang, Jieun Lee, Daeyoun Yun, Hyeri Jang, Euiyoun Hong, Mihee Uhm, Won Hee Lee, Hyojoon Seo, Dae Hwan Kim, and Dong 

       Myong Kim*, “Superlattive band-gap engineered (SBE) capacitorless 1T DRAM cell with a narrow dandgap SiGe channel for high performance and extended 

       retention of holes,” The 18th Korean Conference on Semiconductors, Feb. 2011.

[3] Daeyoun Yun, Jaeman Jang, Hak Youl Bae, Ja Sun Shin, Jieun Lee, Hyeri Jang, Euiyoun Hong, Won Hee Lee, Mihee Uhm, Hyojoon Seo, Dae Hwan Kim, and Dong 

       Myong Kim*, “A study on the Hfin dependence of intrinsic gate delay in FinFET,” The 18th Korean Conference on Semiconductors, Feb. 2011.

[2] Seok Cheon Baek, Sung Wook Park, Hak Youl Bae, Jae Man Jang, Ji Eun Lee, Sun Yeong Lee, Hye Ri Jang, Hyo Jong Kim, Dae Youn Yun, Ja Sun Shin, Dae Hwan 

       Kim, and Dong Myong Kim*, “Accurate extraction of gate capacitances in leaky MOS systems using modified 3-element circuit model combining the multi-

       frequency capacitance-voltage method,” The 17th Korean Conference on Semiconductors, Feb. 2010. (SK Hynix paper award)

[1] Sunyeong. Lee, Yong Woo Jeon, Jaeman Jang, Ja Sun Sin, Hyo Jong Kim, Hak Youl Bae, Dae Youn Yun, Dae Hwan Kim, and Dong Myong Kim*, “A novel self-aligned

       4-bit SONOS type non-volatile memory cell with T-gate and I-shaped FinFET structure and low current sense amplifier,” The 17th Korean Conference on Semiconductors, Feb. 2010.