Research field
ALD process
Silicon-nanowire FETs
Oxide semiconductor (Cu2O)
2D material devices modeling & characterization (MoS2, WSe2 etc.)
Research field
a-IGZO TFTs
Device fabrication/characterization
Post-annealing technique
Modeling & characterization
Undergraduate (Intern)
-2025-
μ 보λΌ(λνμμ§ν), κ³ μ±μΌ(λνμμ§ν), κ³ μμ’ (λνμμ§ν), μ΅μ§μ(λνμμ§ν), κΉμμ°½(SKνμ΄ν¬ 2026), κ°λ³ν, κ³ νμ, κΉλ²κΈ°, κΉμλ, κΉμ§μ±, λ°λμ, λ°μ€ν¬(λνμμ§ν), λ°±λ―Όκ·, μ κ΄μ, μμ£Όν¬, μ΄μ¬ν, μ΄μ±μ°, μμμ
-2024-
μ΄μμ(λνμμ§ν), μ΄λν(λνμμ§ν), μμν(λνμμ§ν), μ λμ (λνμμ§ν), κΆμμΈ, κΉμμ°, κΉμμ€, κΉν¨κ²½, λ Έμ μ€, λ°°μ§μ, μλν, μ΄κ·ν, μ΄μ μ, μ΄μ μ , μ‘°μμ
-2023-
μ‘μ¬μ, μ λͺ μ§, μ νμ°, μ΄μ±μ΄, μμμ, μ₯λ―Όμ°, μ‘°μλ