International

[19] Duk-Hyun Choe, Hagyoul Bae, Seung Geol Nam, Taehwan Moon, Yunseong Lee, Sanghyun Jo, Sangwook Kim, Kwang-Hee Lee, and Jinseong Heo*, “Surface-

functionalized hafnia with bespoke ferroelectric properties for memory and logic applications,” 2021 International Electron Devices Meeting (IEDM), San

Francisco, CA, USA, Dec. 12‒18, 2021. (Oral Presentation).

[18] Hagyoul Bae, Taehwan Moon, Seung Geol Nam, Kwang-Hee Lee, Sangwook Kim, Sangjun Hong, Duk-Hyun Choe, Sanghyun Jo, Yunseong Lee, and Jinseong Heo*, “Ferroelectric diodes with sub-ns and sub-fJ switching and its programmable network for logic-in-memory applications,” 2021 Symposia on VLSI Technology and Circuits (VLSI), Kyoto, Japan, Jun. 13‒19, 2021. (Oral Presentation) [PDF]

[17] Hagyoul Bae†, Seung Geol Nam† (co-1st author), Taehwan Moon, Yunseong Lee, Sanghyun Jo, Duk-Hyun Choe, Sangwook Kim, Kwang-Hee Lee, and Jinseong

Heo*, “Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance,” 2020 International

Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 12‒18, 2020. (Oral Presentation) [PDF]

[16] Mengwei Si, Yangdong Luo, Wonil Chung, Hagyoul Bae, Dongqi Zheng, Junkang Li, Jingkai Qin, Gang Qiu, Shimeng Yu, and Peide D. Ye*, “A novel scalable energy-

efficient synaptic device: crossbar ferroelectric semiconductor junction,” 2019 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 7-11,

2019. [PDF]

[15] Hagyoul Bae, and Peide D. Ye*, “Plasma-enhanced atomic layer deposition of copper(I) oxide for BEOL transistors,” 2019 International Electron Devices Meeting

(IEDM), San Francisco, CA, USA, Dec. 7‒11, 2019. (Special Poster Presentation) [PDF]

[14] Hagyoul Bae, Mengwei Si, Jinhyun Noh, Gang Qiu, Adam R. Charnas, Wonil Chung, Xiao Lyu, Sami Alghamdi, and Peide D. Ye*, “Atomic layer deposition ultrathin

and transparent Cu2O-based solar blind ultraviolet light photodetector with a novel copper precursor,” 2019 IEEE Semiconductor Interface Specialists Conference

(SISC), San Diego, CA, USA, Dec. 11‒14, 2018. (Poster Presentation) [PDF]

[13] Hagyoul Bae, Jinhyun Noh, and Peide D. Ye*, “A novel I-V characterization based on ultraviolet light for quantitative study of donor-and acceptor-like interface

trap density over bandgap energy in β-Ga2O3 FETs,” 2018 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 6‒8, 2018. (Oral

Presentation) [PDF]

[12] Jinhyun Noh, Hagyoul Bae, Sami Alajlouni, Kerry Maize, Marko J. Tadjer, Ali Shakouri, and Peide D. Ye*, “Comprehensive study of local electro-thermal effect in

β-Ga2O3 field-effect transistors,” 2019 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒14, 2019. [PDF]

[11] Sami Alghamdi, Mengwei Si, Hagyoul Bae, Hong Zhou, and Peide D. Ye*, “Measurements of interface trap density on GaN MOS-HEMTs with epitaxial MgCaO

and amorphous Al2O3 gate stacks by single pulse charge Pumping,” 2019 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒

14, 2019. [PDF]

[10] Hong Zhou, Jinhyun Noh, Hagyoul Bae, and Peide D. Ye*, “High performance β–Ga2O3 nano-membrane,” 2019 Government Microcircuit Applications & Critical

Technology Conference (GOMACTech), Albuquerque, NM, USA, Mar. 25‒28, 2019.

[9] Seong-Yeon Kim, Seung-Wook Lee, Myungsoo Seo, Do-Hyun Kim, Choong-Ki Kim, Hagyoul Bae, Byung-Hyun Lee, and Yang-Kyu Choi*, “A study of hot-carrier

injection influenced by doping concentration in a junctionless-mode gate-all-around field effect transistor with 5-story vertically integrated nanowires,”

International Conference on Electronics, Information, and Communication (ICEIC), Honolulu, Hawaii, USA, Jan. 24‒27, 2018. [PDF]

[8] Hagyoul Bae, Weon-Guk Kim, Hongkeun Park, Seung-Bae Jeon, Soo-Ho Jung, Hye Moon Lee, Myung-Soo Kim, Il-Woong Tcho, Byung Chul Jang, Hwon Im, Sung-

Yool Choi, Sung-Gap Im, and Yang-Kyu Choi*, “Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for

wearable healthcare device,” 2017 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 4‒6, 2017. (Oral Presentation) [PDF]

[7] Weon-Guk Kim, Daewon Kim, Seung-Bae Jeon, Sang-Jae Park, Il-Woong Tcho, Hagyoul Bae, Hwon Im, and Yang-Kyu Choi*, “A novel triboelectric nanogenerator

with high performance and long duration time of sinusoidal current generation,” 2017 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec.

4‒6, 2017. [PDF]

[6] Myungsoo Seo†, Hagyoul Bae† (co-1st author), Chang-Hoon Jeon, Byung-Hyun Lee, and Yang-Kyu Choi*, “Advanced characterization technique for the extraction

of intrinsic effective mobility in ultra-thin-body strained SOI MOSFETs,” IEEE SOI-3D-Subthreshold Microelectronics Unified Conference (S3S), San Francisco, CA,

USA, Oct. 16‒19, 2017. (Oral Presentation) [PDF]

[5] Byung-Hyun Lee, Dae Chul Ahn, Min Ho Kang, Seung-Bae Jeon, Tewook Bang, Hagyoul Bae, Jun-Young Park, Dae-Won Hong, Nam-Soo Park, and Yang-Kyu

Choi*, “Vertically integrated ZRAM toward extremely scaled memory,” Proceeding of ECS Meeting, Honolulu (2016). [PDF]

[4] Byung-Hyun Lee, Min-Ho Kang, Jae Hur, Dong-Il Lee, Dae-Chul Ahn, Hagyoul Bae, and Yang-Kyu Choi*, “An optimum strategy for the low voltage operation of the

mechanical switch,” 2015 IEEE Nano, pp. 1082‒1086, Jul. 2015 (Best paper award). [PDF]

[3] Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*,

“Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor

thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics,” The Society of Information Display (SID), Jun. 2013.

(Distinguish Poster Paper) [PDF]

[2] Chunhyung Jo, Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Seonwook Hwang, Dae Hwan Kim, Dong Myong Kim, Byung-Du Ahn, Je-Hun Lee, and Junho Song*,

“Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors,” The Society of

Information Display (SID), Jun. 2013. [PDF]

[1] Sunyeong Lee, Jaeman Jang, Ja Sun Shin, Hyojong Kim, Hagyoul Bae, Daeyoun Yun, Dae Hwan Kim, and Dong Myong Kim*, “A novel superlattice band-gap

engineered (SBE) capacitorless DRAM cell with extremely short channel length down to 30 nm,” 2010 IEEE International Memory Workshop (IMW), pp. 16‒19,

May 2010. [PDF]