International

International

[28] Seohyeon Park, Minah Park, Jaewook Yoo, Hongseung Lee, Soyeon Kim, Sojin Jung, Kiyoung Lee, Gang Qiu, and Hagyoul Bae*, The 3rd Global Conference of 

          Innovation Materials (GCIM 2025), Jeju, S. Korea, Jun. 15‒19, 2025. (Oral Presentation).

[27] Soyeon Kim, Jaewook Yoo, Hongseung Lee, Minah Park, Seohyeon Park, Sojin Jeong, TaeWan Kim, Kiyoung Lee, Gang Qiu, and Hagyoul Bae*, The 3rd Global 

          Conference of Innovation Materials (GCIM 2025), Jeju, S. Korea, Jun. 15‒19, 2025. (Oral Presentation).

[26] Sojin Jung, Seongbin Lim, Hongseung Lee, Jaewook Yoo, Soyeon Kim, Minah Park, Seohyeon Park, Gang Qiu, Sangmoon Yoon, Jin-Ha Hwang, Kiyoung Lee, and 

          Hagyoul Bae*, The 3rd Global Conference of Innovation Materials (GCIM 2025), Jeju, S. Korea, Jun. 15‒19, 2025. (Oral Presentation).

[25] Minah Park, Jaewook Yoo, Soyeon Kim, Hongseung Lee, Seohyeon Park, Sojin Jung, Gang Qiu, Kiyoung Lee, and Hagyoul Bae*, The 3rd Global Conference 

          of Innovation Materials (GCIM 2025), Jeju, S. Korea, Jun. 15‒19, 2025. (Oral Presentation).

[24] Minah Park Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Soyeon Kim, Seongbin Lim, Seohyeon Park, Sojin Jung, Keun Heo, TaeWan Kim, Peide D. Ye, and 

          Hagyoul Bae, "Quantitative Analysis of Intrinsic Trap Density in α-In2Se3 FeS-FETs by De-Embedding Parasitic Capacitance Using Modified Conductance 

          Method” 2024 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒14, 2024. (Oral Presentation).

[23] Seohyeon Park, Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Soyeon Kim, Seongbin Lim, Minah Park, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, and Hagyoul 

         Bae, "Accurate Extraction of Donor- and Acceptor-like Interface Trap Density by Photonic GIDL Characteristics in Vertically Stacked Si-NW GAA FETs” 2024 

         IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒14, 2024. (Oral Presentation).

[22] Minah Park, Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Soyeon Kim, Seongbin Lim, Seohyeon Park, Sojin Jung, Yeong-Gwon Jeong, Hagyoul Bae*, “Device characterization and applications of 2D a-In2Se3 FETs” The 8th International Conference on Electronic Materials and Nanotechnology for Green Environment(ENGE 2024), Jeju, S. Korea, Nov 24‒27, 2024. (Oral Presentation).

[21] Soyeon Kim, Jaewook Yoo, Ji-Man Yu, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Minah Park, Seohyeon Park, Yang-Kyu Choi*, and Hagyoul Bae*, “Fully I-V-              based optoelectronic differential ideality factor method for extraction of interface traps in 3D Si vertical transport FET” The 9th International Conference on                        Microelectronics and Plasma Technology (ICMAP 2024), Jeju, S. Korea, Jan 15‒18, 2023. (Oral Presentation).

[20] Jaewook Yoo, Chan-Song Moon, Hagyoul Bae*, and Seung-Bae Jeon*, “Simulation of integrated module consists of β-Ga2O3  transistor-based full wave recitifier             and triboelectric generator” The 18th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE NEMS 2023), Jeju, S. Korea, May 14‒17,            2023. (Poster Presentation).

[19] Duk-Hyun Choe, Hagyoul Bae, Seung Geol Nam, Taehwan Moon, Yunseong Lee, Sanghyun Jo, Sangwook Kim, Kwang-Hee Lee, and Jinseong Heo*, “Surface-

          functionalized hafnia with bespoke ferroelectric properties for memory and logic applications,” 2021 International Electron Devices Meeting (IEDM), San 

          Francisco, CA, USA, Dec. 12‒18, 2021. (Oral Presentation).

[18] Hagyoul Bae, Taehwan Moon, Seung Geol Nam, Kwang-Hee Lee, Sangwook Kim, Sangjun Hong, Duk-Hyun Choe, Sanghyun Jo, Yunseong Lee, and Jinseong Heo*, “Ferroelectric diodes with sub-ns and sub-fJ switching and its programmable network for logic-in-memory applications,” 2021 Symposia on VLSI Technology and Circuits (VLSI), Kyoto, Japan, Jun. 13‒19, 2021. (Oral Presentation) [PDF]

[17] Hagyoul Bae†, Seung Geol Nam† (co-1st author), Taehwan Moon, Yunseong Lee, Sanghyun Jo, Duk-Hyun Choe, Sangwook Kim, Kwang-Hee Lee, and Jinseong 

          Heo*, “Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance,” 2020 International 

          Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 12‒18, 2020. (Oral Presentation) [PDF]

[16] Mengwei Si, Yangdong Luo, Wonil Chung, Hagyoul Bae, Dongqi Zheng, Junkang Li, Jingkai Qin, Gang Qiu, Shimeng Yu, and Peide D. Ye*, “A novel scalable energy-

          efficient synaptic device: crossbar ferroelectric semiconductor junction,” 2019 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 7-11, 

          2019. [PDF]

[15] Hagyoul Bae, and Peide D. Ye*, “Plasma-enhanced atomic layer deposition of copper(I) oxide for BEOL transistors,” 2019 International Electron Devices Meeting 

         (IEDM), San Francisco, CA, USA, Dec. 7‒11, 2019. (Special Poster Presentation) [PDF]

[14] Hagyoul Bae, Mengwei Si, Jinhyun Noh, Gang Qiu, Adam R. Charnas, Wonil Chung, Xiao Lyu, Sami Alghamdi, and Peide D. Ye*, “Atomic layer deposition ultrathin 

         and transparent Cu2O-based solar blind ultraviolet light photodetector with a novel copper precursor,” 2019 IEEE Semiconductor Interface Specialists Conference 

         (SISC), San Diego, CA, USA, Dec. 11‒14, 2018. (Poster Presentation) [PDF]

[13] Hagyoul Bae, Jinhyun Noh, and Peide D. Ye*, “A novel I-V characterization based on ultraviolet light for quantitative study of donor-and acceptor-like interface 

          trap density over bandgap energy in β-Ga2O3 FETs,” 2018 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 6‒8, 2018. (Oral 

          Presentation) [PDF]

[12] Jinhyun Noh, Hagyoul Bae, Sami Alajlouni, Kerry Maize, Marko J. Tadjer, Ali Shakouri, and Peide D. Ye*, “Comprehensive study of local electro-thermal effect in 

          β-Ga2O3 field-effect transistors,” 2019 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒14, 2019. [PDF]

[11] Sami Alghamdi, Mengwei Si, Hagyoul Bae, Hong Zhou, and Peide D. Ye*, “Measurements of interface trap density on GaN MOS-HEMTs with epitaxial MgCaO 

          and amorphous Al2O3 gate stacks by single pulse charge Pumping,” 2019 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 11‒

         14, 2019. [PDF]

[10] Hong Zhou, Jinhyun Noh, Hagyoul Bae, and Peide D. Ye*, “High performance β–Ga2O3 nano-membrane,” 2019 Government Microcircuit Applications & Critical 

         Technology Conference (GOMACTech), Albuquerque, NM, USA, Mar. 25‒28, 2019.

[9] Seong-Yeon Kim, Seung-Wook Lee, Myungsoo Seo, Do-Hyun Kim, Choong-Ki Kim, Hagyoul Bae, Byung-Hyun Lee, and Yang-Kyu Choi*, “A study of hot-carrier 

       injection influenced by doping concentration in a junctionless-mode gate-all-around field effect transistor with 5-story vertically integrated nanowires,” 

       International Conference on Electronics, Information, and Communication (ICEIC), Honolulu, Hawaii, USA, Jan. 24‒27, 2018. [PDF]

[8] Hagyoul Bae, Weon-Guk Kim, Hongkeun Park, Seung-Bae Jeon, Soo-Ho Jung, Hye Moon Lee, Myung-Soo Kim, Il-Woong Tcho, Byung Chul Jang, Hwon Im, Sung-

       Yool Choi, Sung-Gap Im, and Yang-Kyu Choi*, “Energy-efficient all fiber-based local body heat mapping circuitry combining thermistor and memristor for 

       wearable healthcare device,” 2017 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 4‒6, 2017. (Oral Presentation) [PDF]

[7] Weon-Guk Kim, Daewon Kim, Seung-Bae Jeon, Sang-Jae Park, Il-Woong Tcho, Hagyoul Bae, Hwon Im, and Yang-Kyu Choi*, “A novel triboelectric nanogenerator 

       with high performance and long duration time of sinusoidal current generation,” 2017 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, Dec. 

       4‒6, 2017. [PDF]

[6] Myungsoo Seo†, Hagyoul Bae† (co-1st author), Chang-Hoon Jeon, Byung-Hyun Lee, and Yang-Kyu Choi*, “Advanced characterization technique for the extraction 

       of intrinsic effective mobility in ultra-thin-body strained SOI MOSFETs,” IEEE SOI-3D-Subthreshold Microelectronics Unified Conference (S3S), San Francisco, CA, 

       USA, Oct. 16‒19, 2017. (Oral Presentation) [PDF]

[5] Byung-Hyun Lee, Dae Chul Ahn, Min Ho Kang, Seung-Bae Jeon, Tewook Bang, Hagyoul Bae, Jun-Young Park, Dae-Won Hong, Nam-Soo Park, and Yang-Kyu 

       Choi*, “Vertically integrated ZRAM toward extremely scaled memory,” Proceeding of ECS Meeting, Honolulu (2016). [PDF]

[4] Byung-Hyun Lee, Min-Ho Kang, Jae Hur, Dong-Il Lee, Dae-Chul Ahn, Hagyoul Bae, and Yang-Kyu Choi*, “An optimum strategy for the low voltage operation of the 

       mechanical switch,” 2015 IEEE Nano, pp. 1082‒1086, Jul. 2015 (Best paper award). [PDF]

[3] Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, 

      “Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor 

      thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics,” The Society of Information Display (SID), Jun. 2013. 

       (Distinguish Poster Paper) [PDF]

[2] Chunhyung Jo, Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Seonwook Hwang, Dae Hwan Kim, Dong Myong Kim, Byung-Du Ahn, Je-Hun Lee, and Junho Song*, 

      “Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors,” The Society of 

      Information Display (SID), Jun. 2013. [PDF]

[1] Sunyeong Lee, Jaeman Jang, Ja Sun Shin, Hyojong Kim, Hagyoul Bae, Daeyoun Yun, Dae Hwan Kim, and Dong Myong Kim*, “A novel superlattice band-gap 

       engineered (SBE) capacitorless DRAM cell with extremely short channel length down to 30 nm,” 2010 IEEE International Memory Workshop (IMW), pp. 16‒19, 

       May 2010. [PDF]