Journal Papers
2024
[85] "Deep learning-assisted design of bilayer nanowire gratings for high-performance MWIR polarizers," Advanced Materials Technologies, 2024. (Co-Authors,
Just Accepted)
[84] Jaewook Yoo, Hyeun Seung Jo, Seung-Bae Jeon, Taehwan Moon, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Soyeong Kim, Minah Park, Seohyeon Park, Jo Hak Jeong, Keun Heo, Yoon Kyeung Lee, Peide D. Ye, TaeWan Kim*, and Hagyoul Bae*, "Direct observation for distinct behaviors of gamma-ray irradiation-induced subgap density-of-states in amorphous InGaZnO TFTs by multiple-wavelength light source ," Advanced Electronic Materials, 2024. [PDF]
[83] Hagyoul Bae*, Geon Bum Lee*, Jaewook Yoo, Khwang-Sun Lee, Ja-Yun Ku, Kihyun Kim, Jungsik Kim, Peide D. Ye, Jun-Young Park*, and Yang-Kyu Choi*, "Low- frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β–Ga2O3 FinFET" Solid-State Electronics, vol. 215, 108882, Feb. 2024. [PDF]
[82] Minseok Lee, Zahyun Ku, Seungjin Jeong, Jehwan Hwang, Junghyun Lee, Junoh Kim, Sang-Woo Kang, Augustine Urbas, Hagyoul Bae*, Bongjoong Kim*, "Simulational investigation of self-aligned bilayer linear grating enabling highly enhanced responsivity of MWIR InAs/GaSb type-II superlattice (T2SL) photodetector," Sci Rep, 2023. [PDF]
[81] Hyun Jae Lee, Taehwan Moon, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yunseong Lee, Yoonsang Park, Kihong Kim, and Jinseong Heo "Interfacial layer selection methodology for customized ferroelectric memories," IEEE Trans. on Electron Devices, vol. 71, no. 3, pp. 1907-1912, Mar. 2024. [PDF]
2023
[80] Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo*, and Hagyoul Bae*, "Recent research for HZO-based ferroelectric memory towards in-memory computing applications," Electronics, 2023.[PDF]
[79] Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Yunseok Kim, Owoong Kwon, Seunggeol Nam, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Myongho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Yoonsang Park, Eunha Lee, and Jinseong Heo*, "Negative differential capacitance in ultrathin ferroelectric hafnia," Nature Electronics, 2023. [PDF]
[78] Ja-Yun Ku, Khwan-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Seyoung Oh, Kiyoung Lee, Byungjin Cho, Hagyoul Bae*, and Jun-Young Park*, "Comprehensive study on trap-induced bias instability via high-pressure D2 and N2 annealing," IEEE Trans. on Device and Materials Reliability, 2023 (Just Accepted)[PDF]
[77] Taehwan Moon , Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J. Joshua Yang, and Jinseong Heo, "Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing," Neuromorphic Computing and Engineering, 2023 (Just Accepted)[PDF]
[76] Atif Jan, Thomas Rembert, Sunil Taper, Joanna Symonowicz, Taehwan Moon , Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk-Hyun Choe, Jinseong Heo, Judith MacManus-Driscoll, Bartomeu Monserrat, Giuliana Di Martino, "In-operando optical tracking of oxygen vacancy migration and phase change in few-nm ferroelectric HZO memories," Advanced Functional Materials, 2023. [PDF]
2022
[75] Jonghyeon Ha, Gyeongyeop Lee, Hagyoul Bae, Kihyun Kim, Jin-Woo Han, and Jungsik Kim*, "On-state current degradation owing to displacement defect by
terrestrial cosmic rays in nanosheet FET," Micromachines, 2022. [PDF]
[74] Gyeongyeop Lee, Jonghyeon Ha, Kihyun Kim, Hagyoul Bae, Chong-Eun Kim, and Jungsik Kim*, "Influence of radiation-induced displacement defect in 1.2kV SiC
metal-oxide-semiconductor field-effect transistors," Micromachines, vol. 13, no. 6, p. 901, Jun 2022.[PDF]
[73] Seunghun Kang†, Woo-Sung Jang†, Anna N. Morozovska†, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex
Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi,
Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo*, Sergei V. Kalinin*, Young-Min Kim*, and Yunseok Kim*,
“Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment,” Science, vol. 376, no. 6594, pp. 731-738, May 2022.[PDF]
[72] Gyeongho Son, Rizki Arif Pradono, Jiwon Choi, Youngjae Jeong, Dae Seok Han, Mohamad Syahadi, Youngho Jung, Kyungmok Kwon, Hagyoul Bae, and
Kyoungsik Yu*, “Chemically-etched optical fiber tapers for adiabatic fundamental mode evolution over O- and C-bands,” Journal of Lightwave Technology, vol.
40, no. 14, pp. 4832-4840, Jul 2022. [PDF]
2021
[71] Hagyoul Bae, Tae Joon Park, Jinhyun Noh, Wonil Chung, Mengwei Si, Shriram Ramanathan, and Peide D. Ye*, “First demonstration of robust tri-gate β–Ga2O3
nano-membrane field-effect transistors,” Nanotechnology, vol. 33, no. 12, Dec. 2021.[PDF]
[70] Hagyoul Bae†, Geon-Beom Lee† (co-1st author), Jae-Hur, Jun-Young Park, Da-Jin Kim, Myung-Su Kim, and Yang-Kyu Choi*, “Gateless and capacitorless
germanium biristor with a vertical pillar structure,” Micromachines, vol. 12, no. 8, Jul. 2021. [PDF]
[69] Duk-Hyun Choe, Sung Hyun Kim, Taehwan Moon, Sanhyun Jo, Hagyoul Bae, Seung Geol Nam, Yunseong Lee, and JInseong Heo*, “Unexpectedly low barrier of
ferroelectric switching in HFO2 via topological domain walls,” Materials Today, 2021 (Just Accepted) [PDF]
[68] Hagyoul Bae, Khwang-Sun Lee, Peide D. Ye, and Jun-Young Park*, “Current annealing to improve drain output performance of β-Ga2O3 field-effect transistors,”
Solid-State Electronics, vol. 185, 108134, Nov. 2021. [PDF]
[67] Hagyoul Bae* (co-corresponding), Adam R. Charnas, Wonil Chung, Mengwei Si, Xiao Lyu, Xing Sun, Joon Park, Haiyan Wang, Dmitry Zemlyanov, and Peide D.
Ye*, “Ultrathin transparent copper(I) oxide films grown by plasma-enhanced atomic layer deposition for back-end-of-line p-type transistors,” IOP Nanoexpress,
vol. 2, no. 2, Jun. 2021. [PDF]
[66] Jinhyun Noh†, Hagyoul Bae† (co-1st author), Junkang Li, Yandong Luo, Yiming Qu, Tae Joon Park, Mengwei Si, Xuegang Chen, Adam R. Charnas, Wonil Chung,
Xiaochen Peng, Shriram Ramanathan, Shimeng Yu, and Peide D. Ye*, “First experimental demonstration of robust HZO/β-Ga2O3 ferroelectric field-effect
transistors as synaptic devices for artificial intelligence applications in high temperature environment,” IEEE Trans. on Electron Devices, vol. 68, no. 5, Mar. 2021.
[65: arXiv] Hagyoul Bae, Tae Joon Park, Jinhyun Noh, Wonil Chung, Mengwei Si, Shriram Ramanathan, and Peide D. Ye*, “First demonstration of robust tri-gate β–
Ga2O3 nano-membrane field-effect transistors operated up to 400℃,” arXiv:2105.01721, 2021. [PDF]
2020
[64] Sami Alghamdi, Mengwei Si, Hagyoul Bae, Hong Zhou, and Peide D. Ye*, “Single pulse charge pumping measurements on AlGaN/GaN MOSHEMT: fast and
reliable extraction of interface traps density,” IEEE Trans. on Electron Devices, vol. 67, no. 2, pp. 444‒448, Jan. 2020. [PDF]
2019
[63] Hagyoul Bae, Adam R. Charnas, Xing Sun, Jinhyun Noh, Mengwei Si, Wonil Chung, Gang Qiu, Xiao Lyu, Sami Alghamdi, Haiyan Wang, Dmitry Zemlyanov, and
Peide D. Ye*, “Solar-blind UV photodetector based on atomic layer deposited Cu2O and nano-membrane β-Ga2O3 pn oxide heterojunction,” ACS Omega, vol. 4,
no. 24, pp. 20756-20761, Nov. 2019. [PDF]
[62] Jinhyun Noh, Sami Alajlouni, Marko J. Tadjer, Hagyoul Bae, James C. Culbertson, Mengwei Si, Hong Zhou, Peter A. Bermel, Ali Shakouri, and Peide D. Ye*, “High
performance β-Ga2O3 nano-membrane field effect transistors on a high thermal conductivity diamond substrate,” IEEE J. of Electron Device Society, vol. 7, pp. 914-
9188, Aug. 2019. [PDF]
[61] Hagyoul Bae†, Daewon Kim† (co-1st author), Myungsoo Seo, Ik Kyeong Jin, Seung-Bae Jeon, Hye Moon Lee, Soo-Ho Jung, Byung Chul Jang, Gyeongho Son,
Kyoungsik Yu, Sung-Yool Choi, and Yang-Kyu Choi*, “Bioinspired polydopamine-based resistive switching memory on cotton fabric for wearable neuromorphic
device applications,” Adv. Mater. Tech. vol. 4, no. 8, p. 1900151, Aug. 2019. [PDF]
[60] Jae Kwon, Byung-Hyun Lee, Seong-Yeon Kim, Jun-Young Park, Hagyoul Bae, Yang-Kyu Choi, and Jae-Hyuk Ahn*, “Nanoscale FET-based transduction toward
sensitive extended-gate biosensors,” ACS Sensors, vol. 4, no. 6, pp. 1724-1729, Jun. 2019. [PDF]
[59] Sang-Jae Park, Sang Han Lee, Myeong-Lok Seol, Seung-Bae Jeon, Hagyoul Bae, Daewon Kim, Gyu-Hyeong Cho, and Yang-Kyu Choi*, “Self-sustainable wind
speed sensor system with omni-directional wind based triboelectric generator,” Nano Energy, vol. 55, pp. 115-122, Jan. 2019. [PDF]
2018
[58] Jae Hur, Byung Chul Jang, Jihun Park, Dong-Il Moon, Hagyoul Bae, Jun-Young Park, Gun-Hee Kim, Seung-Bae Jeon, Myungsoo Seo, Sungho Kim, Sung-Yool Choi,
and Yang-Kyu Choi*, “A recoverable synapse device using a three-dimensional silicon transistor,” Adv. Func. Mater., vol. 28, no. 47, p. 1804844, Oct. 2018. [PDF]
[57] Jun-Young Park, Weon-Guk Kim, Hagyoul Bae, Ik Kyeong Jin, Da-Jin Kim, Hwon Im, Il-Woong Tcho, and Yang-Kyu Choi*, “On-chip curing by microwave for long
term usage of electronic devices in harsh environments,” Scientific Reports, vol. 8, no. 1, p. 14953, Oct. 2018. [PDF]
[56] Ik Kyeong Jin, Jun-Young Park, Byung-Hyun Lee, Seung-Bae Jeon, Il-Woong Tcho, Sang-Jae Park, Weon-Guk Kim, Jun-Kyu Han, Seung-Wook Lee, Seong-Yeon
Kim, Hagyoul Bae, Daewon Kim, and Yang-Kyu Choi*, “Self-powered data erasing of a nanoscale flash memory by triboelectricity,” Nano Energy, vol. 52, pp. 63-
70, Oct. 2018. [PDF]
[55] Hagyoul Bae, Jinhyun Noh, Sami Alghamdi, Mengwei Si, and Peide D. Ye*, “Ultraviolet light-based current-voltage method for simultaneous extraction of donor-
and acceptor-like interface traps in β-Ga2O3 FETs,” IEEE Electron Device Letters, vol. 39, no. 11, pp. 1708-1711, Nov. 2018. [PDF]
[54] Gun-Hee Kim, Hagyoul Bae, Jae Hur, Choong-Ki Kim, Geon-Bum Lee, Taewook Bang, and Yang-Kyu Choi*, “Reply to comments by Ortiz-Conde et al,” IEEE Trans.
Electron Devices, vol. 65, no. 9, pp. 4022‒4024, Aug. 2018. [PDF]
[53] Myungsoo Seo, Min Ho Kang, Seung-Bae Jeon, Hagyoul Bae, Jae Hur, Byung Chul Jang, Seokjung Yun, Seongwoo Cho, Myung-Su Kim, Kyu-Man Hwang,
Seungbum Hong, Sung-Yool Choi, and Yang-Kyu Choi*, “First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for
neuromorphic applications,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1445-1448, Sep. 2018. [PDF]
[52] Do-Hyun Kim, Sung Kwan Lim, Hagyoul Bae, Choong-Ki Kim, Seung-Wook Lee, Myungsoo Seo, Seong-Yeon Kim, Kyu-Man Hwang, Geon-Bum Lee, Byoung Hun
Lee, and Yang-Kyu Choi*, “Quantitative analysis of deuterium annealing effect on poly-Si TFTs by low frequency noise and DC I-V characterization,” IEEE Trans.
Electron Devices, vol. 65, no. 4, pp. 1640‒1644, Apr. 2018. [PDF]
[51] Hagyoul Bae†, Sungwoo Jun† (co-1st author), Choong-Ki Kim, Byeong-Kwon Ju*, and Yang-Kyu Choi*, “Quantitative analysis of trap states through the behavior
of the sulfur ions in MoS2 FETs following high vacuum annealing,” Journal of Physics D: Applied Physics, vol. 51, no. 10, p. 105102, Feb. 2018. [PDF]
[50] Jun-Young Park, Byung-Hyun Lee, Geon-Beom Lee, Hagyoul Bae, and Yang-Kyu Choi*, “Localized electrothermal annealing with nanowatt power for a silicon
nanowire field-effect transistor,” ACS Appl. Mater. Inter., vol. 10, no. 5, pp. 4838‒4843, Jan. 2018. [PDF]
[49] Gun-Hee Kim, Hagyoul Bae, Jae Hur, Choong-Ki Kim, Geon-Bum Lee, Tewook Bang, Yoon-Ik Son, Seong-Wan Ryu, and Yang-Kyu Choi*, “Highly biased linear
condition method for separately extracting source and drain resistance in MOSFETs,” IEEE Trans. on Electron Devices, vol. 65, no. 2, pp. 419‒423, Feb. 2018. [PDF]
2017
[48] Kyu-Man Hwang, Jun-Young Park, Hagyoul Bae, Seung-Wook Lee, Choong-Ki Kim, Myungsoo Seo, Hwon Im, Do-Hyun Kim, Seong-Yeon Kim, Geon-Beom Lee,
and Yang-Kyu Choi*, “Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments,”
ACS Nano, vol. 11, no. 12, pp. 12547‒12552, Dec. 2017. [PDF]
[47] Hagyoul Bae†, Byung Chul Jang† (co-1st author), Hongkeun Park, Soo-Ho Jung, Hye Moon Lee, Jun-Young Park, Seung-Bae Jeon, Gyeongho Son, Il-Woong Tcho,
Kyoungsik Yu, Sung-Gap Im, Sung-Yool Choi*, and Yang-Kyu Choi*, “Functional circuitry on commercial fabric via textile-compatible nanoscale film coating
process for fibertronics,” Nano Lett., vol. 17, no. 10, pp. 6443-6452, Sep. 2017. [PDF]
[46] Jun-Young Park, Byung-Hyun Lee, Ki Soo Chang, Dong Uk Kim, Chanbae Jeong, Choong-Ki Kim, Hagyoul Bae, and Yang-Kyu Choi*, “Investigation of self-heating
effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels,” IEEE Trans. on Electron Devices, vol. 64, no. 11, pp. 4393‒4399,
Nov. 2017. [PDF]
[45] Hagyoul Bae, Choong-Ki Kim, and Yang-Kyu Choi*, “Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency
capacitance-conductance technique,” AIP Advances, vol. 7, no.7, p. 075304, Jul. 2017. [PDF]
[44] Geon-Beom Lee, Choong-Ki Kim, Jun-Young Park, Tewook Bang, Hagyoul Bae, Seong-Yeon Kim, Seung-Wan Ryu, and Yang-Kyu Choi*, “A novel technique for
curing hot-carrier-induced damage by utilizing the forward current of the PN-junction in a MOSFET,” IEEE Electron Device Letters, vol. 38, no. 8, pp. 1012-1014,
Aug. 2017. [PDF]
[43] Seung-Wook Lee†, Tewook Bang† (co-1st author), Choong-Ki Kim, Kyu-Man Hwang, Byung Chul Jang, Dong-Il Moon, Hagyoul Bae, Myungsoo Seo, Seong-Yeon
Kim, Do-Hyun Kim, Sung-Yool Choi, and Yang-Kyu Choi*, “Comprehensive study on the relation between low-frequency noise and asymmetric parasitic
resistances in a vertical pillar-type FET,” IEEE Electron Device Letters, vol. 38, no. 8, pp. 1008‒1011, Aug. 2017. [PDF]
[42] Hagyoul Bae, Tewook Bang, Choong-Ki Kim, Jae Hur, Se-Yeob Kim, Chang-hoon Jeon, Jun-Young Park, Dae-Chul Ahn, Gun-Hee Kim, Yun-Ik Son, Jae-Hoon Lee,
Yong-Taik Kim, and Yang-Kyu Choi*, “Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in floating-
body Si/SiGe pMOSFET,” Journal of Nanoscience and Nanotechnology, vol. 17, no. 5, pp. 3245-3250, May 2017. [PDF]
2016
[41] Choong-Ki Kim†, Eun Gyo Jeong† (co-1st author), Eungtaek Kim, Jeong-Gyu Song, Youngjun Kim, Whang Je Woo, Myung Keun Lee, Hagyoul Bae, Seong-Bae
Jeon, HyungjunKim, Kyung Cheol Choi*, and Yang-Kyu Choi*, “Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad
encapsulation,” Nanotechnology, vol. 28, no. 5, p. 055203, Dec. 2016. [PDF]
[40] Byung-Hyun Lee†, Dong-Il Lee† (co-1st author), Hagyoul Bae, Hyejeong Seong, Seung-Bae Jeon, Myung-Lok Seol, Jin-Woo Han, Meyya Meyyappan, Sung-Gap
Im, and Yang-Kyu Choi*, “Foldable and disposable memory on paper,” Scientific Reports, vol. 6, p. 38389, Dec. 2016. [PDF]
[39] Hagyoul Bae†, Byung-Hyun Lee† (co-1st author), Dongil Lee, Myeong-Lok Seol, Daewon Kim, Jin-Woo Han, Choong-Ki Kim, Seung-Bae Jeon, Daechul Ahn, Sang-
Jae Park, Jun-Young Park, and Yang-Kyu Choi*, “Physically transient memory on a rapidly dissoluble paper for security application,” Scientific Reports, vol. 6, p.
38324, Dec. 2016. [PDF]
[38] Jun-Young Park, Hagyoul Bae, Dong-Il Moon, Chang-Hoon Jeon, and Yang-Kyu Choi*, “Threshold voltage tuning technique in gate-all-around MOSFETs by
utilizing gate electrode with potential distribution,” IEEE Electron Device Letters, vol. 37, no. 11, pp. 1391‒1394, Nov. 2016. [PDF]
[37] Choong-Ki Kim, Eungtaek Kim (co-1st author), Myung Keun Lee, Jun-Young Park, Myeong-Lok Seol, Hagyoul Bae, Tewook Bang, Seung-Bae Jeon, Sang-Hee
Park, Kyung Cheol Choi*, and Yang-Kyu Choi*, “Electrothermal annealing (ETA) method to enhance the electrical performance of amorphous-oxide-
semiconductor (AOS) thin-film transistors (TFTs),” ACS Appl. Mater. Inter., vol. 8, no. 36, pp. 23820‒23826, Aug. 2016. [PDF]
[36] Byung-Hyun Lee, Dae-Chul Ahn, Min-Ho Kang, Seung-Bae Jeon, Tewook Bang, Hagyoul Bae, Jun-Young Park, Dae-Won Hong, Nam-Soo Park, and Yang-Kyu
Choi*, “Vertically integrated ZRAM toward extremely scaled memory,” ECS Transactions, vol. 75, no. 5, 311‒316, Aug. 2016. [PDF]
[35] Jun-Young Park, Dong-Il Moon, Hagyoul Bae, Young Tak Roh, Myeong-Lok Seol, Byung-Hyun Lee, Chang-Hoon Jeon, Hee-Chul Lee, and Yang-Kyu Choi*, “Local
electro-thermal annealing for repair of total ionizing dose-induced damage in gate-all-around MOSFETs,” IEEE Electron Device Letters, vol. 37, no. 7, pp. 843‒846,
Jul. 2016. [PDF]
[34] Dongil Lee†, Jinsu Yoon, Juhee Lee, Byung-Hyun Lee, Myeong-Lok Seol, Hagyoul Bae, Seung-Bae Jeon, Hyejeong Seong, Sung Gap Im, Sung-Jin Choi*, and Yang-
Kyu Choi*, “Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric,” Scientific Reports, vol. 6, p. 26121,
May 2016. [PDF]
[33] Chang-Hoon Jeon, Jun-Young Park, Myeong-Lok Seol, Dong-Il Moon, Jae Hur, Hagyoul Bae, Seung-Bae Jeon, and Yang-Kyu Choi*, “Joule heating to enhance the
performance of a gate-all-around silicon nanowire transistor,” IEEE Trans. on Electron Devices, vol. 63, no. 6, pp. 2288‒2292, Jun. 2016. [PDF]
[32] Ui-Sik Jeong†, Choong-Ki Kim† (co-1st author), Hagyoul Bae, Doog-Il Moon, Tewook Bang, Ji-Min Choi, Jae Hur, and Yang-Kyu Choi*, “Investigation of low-
frequency noise in nonvolatile memory composed of a gate-all-around junctionless nanowire FET,” IEEE Trans. on Electron Devices, vol. 63, no. 5, pp. 2210‒2213,
May 2016. [PDF]
[31] Choong-Ki Kim†, Chan Hak Yu† (co-1st author), Jae Hur, Hagyoul Bae, Seung-Bae Jeon, Hamin Park, Yong Min Kim, Kyung Cheol Choi, Yang-Kyu Choi*, and Sung-
Yool Choi*, “Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps,” 2D Materials, vol. 3, no. 1, p. 015007, Feb. 2016. [PDF]
[30] Jun-Young Park, Dong-Il Moon, Myeong-Lok, Seol, Choong-Ki Kim, Chang-Hoon Jeon, Hagyoul Bae, Tewook Bang, and Yang-Kyu Choi*, “Self-curable gate-all-
around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection,” IEEE Trans. Electron Devices, vol. 63, no. 3, pp. 910‒915,
Mar. 2016. [PDF]
[29] Hagyoul Bae†, Choong-Ki Kim† (co-1st author), Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Hyungjun Kim, Sung-Yool
Choi, Kyung Cheol Choi, and Yang-Kyu Choi*, “A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V
characteristics in exfoliated MoS2 FET,” IEEE Electron Device Letters, vol. 37, no. 2, pp. 231-233, Feb. 2016. [PDF]
2015
[28] Byung-Hyun Lee†, Hagyoul Bae† (co-1st author), Hyejeong Seong, Dong-Il Lee, Hongkeun Park, Sung-Gap Im, and Yang-Kyu Choi*, “Direct observation of carbon
filament in water-resistant organic memory,” ACS Nano, vol. 9, no. 7, pp. 7306-7313, Jun. 2015. [PDF]
[27] Hyunjun Choi, Jungmin Lee, Hagyoul Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim, “Bias-dependent effective channel length for extraction of
subgap DOS by capacitance-voltage characteristics in amorphous semiconductor TFTs,” IEEE Trans. on Electron Devices, vol. 62, no. 8, pp. 2689‒2694, Aug. 2015.
[26] Jun Seok Hwang, Hagyoul Bae, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Sub-bandgap photonic capacitance-voltage method for
characterization of the interface traps in low temperature poly-silicon thin-film transistors,” IEEE Electron Device Letters, vol. 36, no. 4, pp. 339‒341, Apr. 2015.
[25] Jungmin Lee, Hagyoul Bae, Jun Seok Hwang, Jaeyeop Ahn, Jun Tae Jang, Jinsoo Yoon, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Modeling and
separate extraction technique for gate bias-dependent parasitic resistances and overlap length in MOSFETs,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 1063‒
1067, Mar. 2015. [PDF]
[24] Sungwoo Jun, Hagyoul Bae, Hyeongjung Kim, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Dual-sweep combinational trans
-conductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors,” IEEE Electron Device Letters, vol. 36, no. 2, pp. 144‒
146, Feb. 2015. [PDF]
2014
[23] Hagyoul Bae, Hyojoon Seo, Sungwoo Jun, Hyunjun Choi, Jaeyeop Ahn, Junseok Hwang, Jungmin Lee, Saeroonter Oh, Jong-Uk Bae, Sung-Jin Choi, Dae Hwan
Kim, and Dong Myong Kim*, “Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous
semiconductor TFTs,” IEEE Trans. Electron Devices, vol. 61, no. 10, pp. 3566-3569, Oct. 2014. [PDF]
2013
[22] Hagyoul Bae, Hyunjun Choi, Sungwoo Jun, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Saeroonter Oh, Jonguk Bae, Sung-Jin Choi, Dae
Hwan Kim, and Dong Myong Kim*, “Single-scan monochromatic photonic capacitance-voltage technique for extraction of subgap DOS over the bandgap in
amorphous semiconductor TFTs,” IEEE Electron Device Letters, vol. 34, no. 12, pp. 1524-1526, Dec. 2013. [PDF]
[21] Jaewook Lee, Sungwoo Jun, Jaeman Jang, Hagyoul Bae, Hyeongjung Kim, Jong Won Chung, Sung-Jin Choi, Dae Hwan Kim, Jiyoul Lee, and Dong Myong Kim*,
“Fully transfer characteristic-based technique for surface potential and subgap density of states in p-channel polymer-based TFTs,” IEEE Electron Device Letters,
vol. 34, no. 12, pp. 1521‒1523, Dec. 2013. [PDF]
[20] Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong
Kim*, “Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide
semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics,” SID Symposium Digest of Technical Papers,
vol. 44, no. 1, pp. 1033-1036, Jun. 2013. (Distinguish Poster Paper) [PDF]
[19] Chunhyung Jo, Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Seonwook Hwang, Dae Hwan Kim, Dong Myong Kim, Byung-Du Ahn, Je-Hun Lee, and Junho Song*,
“Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors,” SID Symposium
Digest of Technical Papers, vol. 44, no. 1, pp. 1070-1073, Jun. 2013. [PDF]
[18] Chunhyung Jo, Sungwoo Jun, Woojoon Kim, Inseok Hur, Hagyoul Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of density-of-
states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress,” Applied Physics Letters, vol. 102, no. 14, pp. 143502-1‒143502-5,
Apr. 2013. [PDF]
[17] Sungwoo Jun, Chunhyung jo, Hagyoul Bae, Hyunjun Choi, Dae Hwan Kim, and Dong Myong Kim*, “Unified subthreshold coupling factor technique for surface
potential and subgap density-of-states in amorphous thin film transistors,” IEEE Electron Device Letters, vol. 34, no. 5, pp. 641‒643, May 2013. [PDF]
[16] Inseok Hur, Hagyoul Bae, Woojoon Kim, Jaehyeong Kim, Hyun Kwang Jeong, Chunhyung Jo, Sungwoo Jun, Jaewook Lee, Yun Hyeok Kim, Dae Hwan Kim, and
Dong Myong Kim*, “Characterization of intrinsic field-effect mobility in TFTs by de-embedding the effect of parasitic source and drain resistance,” IEEE Electron
Device Letters, vol. 34, no. 2, pp. 250‒252, Feb. 2013. [PDF]
[15] Hagyoul Bae, Hyunjun Choi, Saeroonter Oh, Dae Hwan Kim, Jonguk Bae, Jaehyeong Kim, Yun Hyeok Kim, and Dong Myong Kim*, “Extraction technique for
intrinsic subgap-DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement,” IEEE Electron Device Letters, vol. 34,
no. 1, pp. 57-59, Jan. 2013. [PDF]
2012
[14] Hagyoul Bae, Sungwoo Jun, Choon Hyeong Jo, Hyunjun Choi, Jaewook Lee, Yun Hyeok Kim, Seonwook Hwang, Hyun Kwang Jeong, Inseok Hur, Woojoon Kim,
Daeyoun Yun, Euiyeon Hong, Hyojoon Seo, Dae Hwan Kim, and Dong Myong Kim*, “Modified conductance method for extraction of susbgap density-of-states in
a-IGZO thin-film transistors,” IEEE Electron Device Letters, vol. 33, no. 8, pp. 1138-1140, Aug. 2012. [PDF]
[13] Ja Sun Shin, Hagyoul Bae, Euiyoun Hong, Jaeman Jang, Daeyoun Yun, Jieun Lee, Dae Hwan Kim, Dong Myong Kim*, “Modeling and extraction technique for
parasitic resistances in MOSFETs combining DC I-V and low frequency C-V measurement,” Solid-State Electronics, vol. 72, pp. 78‒81, Jun. 2012. [PDF]
[12] Euiyoun Hong, Daeyoun Yun, Hagyoul Bae, Hyunjun Choi, Won Hee Lee, Mihee Uhm, Hyojoon Seo, Jieun Lee, Jaeman Jang, Dae Hwan Kim, and Dong Myong
Kim*, “Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs,” IEEE Electron Device Letters, vol. 33, no. 7,
pp. 922‒924, Jul. 2012. [PDF]
[11] Hagyoul Bae, Inseok Hur, Ja Sun Shin, Daeyoun yun, Euiyoun Hong, Keum-Dong Jung, Mun-Soo Park, Sunwoong Choi, Won Hee Lee, Mihee Uhm, Dae Hwan
Kim, and Dong Myong Kim*, “Hybrid C-V and I-V technique for separate extraction of structure- and bias-dependent parasitic resistances in a-InGaZnO TFTs,”
IEEE Electron Device Letters, vol. 33, no. 4, pp. 534-536, Apr. 2012. [PDF]
[10] Seok Cheon Baek, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim*, “Avalanche hot source method for separated extraction of parasitic source and drain
resistances in single metal-oxide-semiconductor field effect transistors,” Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46‒52, Mar. 2012.
[9] Ja Sun Shin, Hyunjun Choi, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Euiyoun Hong, Dae Hwan Kim, and Dong Myong Kim*, “Vertical-gate Si/SiGe double-HBT-
based capacitorless 1T DRAM cell for extended retention time at low latch voltage,” IEEE Electron Device Letters, vol. 33, no. 2, pp. 134‒136, Feb. 2012. [PDF]
2011
[8] Jun-Hyun Park, Yongsik Kim, Sungchul Kim, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim*, “Surface-potential-based analytic DC I-V model with effective
electron density for a-IGZO TFTs considering the parasitic resistance,” IEEE Electron Device Letters, vol. 32, no. 11, pp. 1540-1542, Nov. 2011. [PDF]
[7] Daeyoun Yun, Minkyung Bae, Jaeman Jang, Hagyoul Bae, Ja Sun Shin, Euiyeon Hong, Jieun Lee, Dae Hwan Kim, and Dong Myong Kim*, “Differential body-factor
technique for characterization of interface traps in MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 9, pp. 1206‒1208, Sep. 2011. [PDF]
[6] Ja Sun Shin, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Jieun Lee, Dae Hwan kim, and Dong Myong Kim*, “A narrow bandgap SiGe channel superlattice bandgap
engineered 1T DRAM cell for low voltage operation and extended hole retention time,” Semiconductor Science and Technology, vol. 26, no. 9, p. 095025, Aug. 2011.
[5] Ja Sun Shin, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Jieun Lee, Euiyoun Hong, Dae Hwan Kim, and Dong Myong Kim*, “A novel double HBT-based capacitorless
1T DRAM cell with Si/SiGe heterojunctions,” IEEE Electron Device Letters, vol. 32, no. 7, pp. 850‒852, Jul. 2011. [PDF]
[4] Hagyoul Bae, Jaeman Jang, Ja Sun Shin, Daeyoun Yun, Jieun Lee, Tae Wan Kim, Dae Hwan Kim, and Dong Myong Kim*, “Modeling and separate extraction of gate-
bias- and channel-length-dependent intrinsic and extrinsic source-drain resistances in MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 6, pp. 722-724, Jun.
2011. [PDF]
[3] Hagyoul Bae, Sungchul Kim, Minkyung Bae, Ja Sun Shin, Dongsik Kong, Hyunkwang Jung, Jaeman Jang, Jieun Lee, Dae Hwan Kim, Dong Myong Kim*, “Extraction
of separated source and drain resistances in amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V characterization,” IEEE Electron Device Letters, vol. 32, no. 6,
pp. 761-763, Jun. 2011.
[2] Sunyeong Lee, Ja Sun Shin, Jaeman Jang, Hagyoul Bae, Daeyoun Yun, Jieun Lee, Dae Hwan Kim, and Dong Myong Kim*, “A novel capacitorless DRAM Cell using
superlattice bandgap-engineered (SBE) structure with 30-nm channel length,” IEEE Transactions on Nanotechnology, vol. 10, no. 5, pp. 1023‒1030, Sep. 2011.
2010
[1] Hagyoul Bae, Seok Cheon Baek, Sunyeong Lee, Jaeman Jang, Ja Sun Shin, Daeyoun Yun, Hyojong Kim, Dae Hwan Kim, and Dong Myong Kim*, “Separate
extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method,” IEEE Electron Device Letters, vol. 31, no. 11, pp. 1190-
1192, Nov. 2010. [PDF]