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[130] Jaewook Yoo, Sojin Jung, Hongseung Lee, Seongbin Lim, Sieun Lee, Junhui Park, Donghyeon Lee, Dongsun Shin, Soohyun Lim, and Hagyoul Bae*
[129] SeungYong Back†, Jaewook Yoo†, Gi Dan Shim, Ji Won Heo, Soobin Lim, Bong-ki Jung, Hagyoul Bae*, and TaeWan Kim*
[128] Hongseung Lee, Jaewook Yoo, Seongbin Lim, Sojin Jung, Minah Park, Seohyeon Park, Donghyeon Lee, Dongsun Shin, Soohyun Lim, Junhui Park, Sieun Lee, Jin-Ha Hwang, Kiyoung Lee, TaeWan Kim*, Sung Hun Jin*, and Hagyoul Bae*
[127] Donghyeon Lee, Jaewook Yoo, Hongseung Lee, Seong Min Jung, Seongbin Lim, Sojin Jung, Seohyeon Park, Minah Park, Dongsun Shin, Sieun Lee, Soohyun Lim, Junhui Park, TaeWan Kim*, Kiyoung Lee*, and Hagyoul Bae*
[126] Sieun Lee, Jaewook Yoo, Seokjin Oh, Hongseung Lee, Seongbin Lim, Minah Park, Seohyeon Park, Sojin Jung, Donghyeon Lee, Soohyun Lim, Dongsun Shin, Junhui Park, Bong-Ki Jung, TaeWan Kim*, and Hagyoul Bae*
[125] Sojin Jung, Junghyun Koo, Hongseung Lee, Dongho Won, Donghwan Kim, Jaewook Yoo, Minah Park, TaeWan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, and Hagyoul Bae*
[124] Hyeonjun Song, Hongseung Lee, Jaewook Yoo, Soyeon Kim, Seongbin Lim, Minah Park, Seohyeon Park, Sojin Jung, Jun-Young Park, Yoon Kyeung Lee, Gang Qiu, TaeWan Kim, and Hagyoul Bae*
[123] Ji Won Heo†, Jaewook Yoo†, Guen Hyung Oh, Jong Min Song, Dong Hyun Seo, Sungjune Park, Hagyoul Bae*, TaeWan Kim*
[122]
Nonlinear asymmetric parasitic resistance extraction of vertical pillar-type FET using physics-informed artificial neural network
IEEE Electron Device Letters, 2026 (Just Accepted)
Jaewook Yoo, Hongseung Lee, Seongbin Lim, Sojin Jung, Soohyun Lim, Donghyeon Lee, Dongsun Shin, Junhui Park, Sieun Lee, Yang-kyu Choi, and Hagyoul Bae*[121]
Metal-induced oxygen diffusion-aware design of a-IGZO TFTs for boosting performance
ACS Applied Materials & Interaces, 2026 (Just Accepted)
Sojin Jung, Seongbin Lim, Hongseung Lee, Jaewook Yoo, Yunseong Choi, Soyeon Kim, Minah Park, Seohyeon Park, Sung Min Jung, Jin-Ha Hwang, Qiu Gang, Kiyoung Lee, Sungjune Park, TaeWan Kim, and Hagyoul Bae*[120]
Localized electrothermal annealing for rapid recovery of ambient degradation in Indium Oxide transistors via COMSOL simulations and experimental characterization
Applied Physics Letters, vol. 128, no. 20, May 2026 Editor's Pick
Dongsun Shin, Jaewook Yoo, Hongseung Lee, Sojin Jung, Seongbin Lim, Minah Park, Seohyeon Park, Donghyeon Lee, Soohyun Lim, Sieun Lee, Junhui Park, TaeWan Kim, Kiyoung Lee, and Hagyoul Bae*[119]
Reconfigurable adaptive synapse and logic device by ambipolar ferroelectric semiconductor
Small, May 2026 (Just Accepted)
Jaewook Yoo, Minah Park, Seokjin Oh, Soyeon Kim, Hongseung Lee, Sojin Jung, Seohyeon Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Jong Min Song, Ji WonHeo, Gyeong Deok Seo, Kiyoung Lee, Sangmoon Yoon, TaeWan Kim*, and Hagyoul Bae*[118]
Sustainable synaptic device with two-dimensional ferroelectric materials for neuromorphic computing
Advances Science, May 2026 (Just Accepted)
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Lim, Ji Won Heo, TaeWan Kim*, and Hagyoul Bae*
[117]
Emergence of unconventional ferroelectric phase in ultrathin Hf0.5Zr0.5O2 films
Science Advances, vol. 12, no. 21, May 2026
Sangjun Lee, Hyangsook Lee, Hyun Hwi Lee, Han-Koo Lee, Jung-Hwa Kim, Seontae Park, Hyun Jae Lee, Hagyoul Bae*, Sanghyun Jo, Musarrat Hasan, Yongho Ha, Bong Jin Kuh, Jinseong Heo, Duk-Hyun Choe, and Eunha Lee
[116]
Demonstration of high-performance ultra-wide bandgap SrSnO3 top-gated MOSFETs
IEEE Electron Device Letters, vol. 47, no. 6, June 2026
Junghyun Koo, Weideng Sun, Donghwan Kim, Hongseung Lee, Chengyu Zhu, Kiyoung Lee, Hagyoul Bae, Bharat Jalan, and Gang Qiu *
[115]
Simultaneous observation of donor- and acceptor-like interface trap density in 5-stage Si-NW GAA FETs using polychromatic photonic I-V characteristics
IEEE Electron Device Letters, vol. 47, no. 5, May 2026
Soohyun Lim, Jaewook Yoo, Hongseung Lee, Seongbin Lim, Minah Park, Seohyeon Park, Sojin Jung, Donghyeon Lee, Sieun Lee, Dongsun Shin, Junhui Park, Yang-Kyu Choi, and Hagyoul Bae*
[114]
Micropatterned Polydimethylsiloxane Triboelectric Nanogenerator: A Novel Method for Morse Code Generation and Wireless Communication
ACS Applied Materials & Interfaces, vol. 18, no. 19, May 2026
Bhishma Pandit, Jin Taek Lee, Hyun-Soo Kim, Jungwoo Bong, Won Young Jang, Seokgyu Lee, Seongmin Jin, Hyungmin Kim, Yeonho Choi, Janghyeon Kim, Donggu Im, Hagyoul Bae, Hyeon-Sik Jang, Seung-Bae Jeon*, Keun Heo*
[113]
Plasma knowledge-based polymorphic engineering for two-dimensional semiconductor contacts
ACS Nano, vol. 20, no. 7, February 2026
Ji Won Heo, Gwang-Seok Chae, Gyeong Deok Seo, Dong Hyun Seo, Gi Dan Shim, Han-Woong Choi, Jin-Hoo Seong, Jae-Heon Lee, Hagyoul Bae, Sungjune Park, Hyo-Chang Lee*, and TaeWan Kim*
[112]
Enhanced dielectric constant by Al gradient doping on atomic-layer-deposited HfO2-based metal–insulator–metal capacitor
Advanced Electronic Materials, vol. 12, no. 3, February 2026
Taelim Lee, Jungwoo Bong, Hyunjin Lee, Ho-Sung Lee, Hyeon-Sik Jang, Hee-Tae Kim, Jae-Hyun Lee, Byung Jin Cho, Yeon-Ho Choi, Hagyoul Bae*, Taehwan Moon*, and Keun Heo*
[111]
High-κ capping layer effects on carrier polarity and reliability of SWNT field effect transistors with spin-on-glass buffer layer
IEEE Transactions on Electron Devices, vol. 73, no. 3, March 2026
Yun Sung Lee†, Seohyeon Park†, Hyeon Bin Jo, Han Min Kim, Hagyoul Bae*, and Sung Hun Jin*
[110]
Enhanced electrical performances with HZO/β–Ga2O3 3D FinFET toward highly perceptual synaptic device application
Materials Science in Semiconductor Processing, vol. 201, January 2026
Seohyeon Park†, Jaewook Yoo†, Seokjin Oh, Hongseung Lee, Minah Park, Seongbin Lim, Soyeon Kim, Sojin Jung, Bongjoong Kim, Keun Heo, Taehwan Moon, TaeWan Kim, Mengwei Si, Peide D. Ye, and Hagyoul Bae*
[109]
Comparative analysis of charge-trap sensitivity and stability in MoTe2 and WS2 field-effect transistors [link]
Physica Scripta, vol. 100, no. 12, December 2025
Gi Dan Shim, Ji Won Heo, Jaewook Yoo, Hagyoul Bae*, and TaeWan Kim*[108]
Impact of intrinsic trap states on the electrical and optoelectric behavior of ReS2 and ReSe2 [link]
Journal of the Korean Ceramic Society, vol. 63, December 2025
Gyeong Deok Seo, Gi Dan Shim, Seung Yong Baek, Sungjune Park, Hagyoul Bae*, and TaeWan Kim*
[107]
High-performance ultra-wide-bandgap CaSnO3 metal-oxide-semiconductor field-effect transistors [link]
Advanced Electronic Materials, vol. 11, no. 19, October 2025
Weideng Sen†, Junghyun Koo†, Donghwan Kim, Hongseung Lee, Rishi Raj, Chengyu Zhu, Kiyoung Lee, Andre Mkhoyan, Hagyoul Bae, Bharat Jalan, and Gang Qiu*
[106]
Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors [link]
Electronic Materials Letters, vol. 33, no. 22, October 2025
Seung Yong Back, Gyeong Deok Seo, Ji Won Heo, Hagyoul Bae*, Bong-ki Jung, TaeWan Kim*
[105]
Advanced characterization of density-of-states over wide bandgap-energy in p-type Cu2O TFTs by multiple-wavelength light source [link]
Applied Physics Letters, vol. 127, no.7, August 2025
Soyeon Kim†, Jaewook Yoo†, Seongbin Lim, Hyeonjun Song, Hongseung Lee, Minah Park, Seohyeon Park, Sojin Jeong, Gang Qiu, Peide D. Ye, TaeWan Kim*, and Hagyoul Bae*
[104]
Defect formation and electrical transformation in SiO2 thin films via Ti-induced interdiffusion [link]
Acta Materialia, vol. 296, September 2025
Soon Joo Yoon, Jeong Woo Jeon, Junho Lee, Jin Tae Park, Chanwoo Lee, Ki Jun Yu, Hagyoul Bae, Kihyun Kim, Keun Heo, Cheol Seong Hwang, Deok-Yong Cho, Taehun Lee*, and Yoon Kyeung Lee*
[103]
Enhanced anodic charge storage in asymmetric hybrid supercapacitor featuring dione-diimide-based electron deficient conjugated polymers
Journal of Materials Chemistry A, vol. 13, no. 30, June 2025
Dhananjaya Patra, Subir K. Pati, Sunita Muduli, Sabyashachi Mishra, Geon-Hong Kim, Hagyoul Bae, TaeWan Kim, and Sungjune Park*
[102]
Photodetection mechanisms and Ultraviolet-visible imaging characteristics of high-detectivity broadband metal-semiconductor-metal photodetector arrays on wafer-scale monolayer MoS2 [link]
ACS Applied Materials & Interfaces, vol. 17, no. 24, June 2025
Bhishma Pandit, Jungwoo Bong, Seongwon Lee, Jungwoo Lee, Sameer Pokhrel, Hagyoul Bae, Ji-Wan Kim, Yunjo Jeong, Sangmin An, Jaehee Choi, Chel-Jong Choi, Krishna Moorthy Ponnusamy, S. Chandramohan, Hyeon-Sik Jang*, and Keun Heo*
[101]
Achieving exceptional elasto-dielectric properties in soft and stretchable elastomers through liquid metal particle incorporation: A comprehensive insight into fundamentals and multifaceted applications [link]
Advanced Composites and Hybrid Materials, vol. 8, no. 293, July 2025
Priyanurj Bhuyan, Mukesh Singh, Hagyoul Bae*, TaeWan Kim*, Sungjune Park*
[100]
Unveiling radiation-tolerant thickness in a-IGZO TFTs with sub-10nm and restoring abnomalities via energy-efficient electro-thermal annealing [link]
Nano Letters, vol. 25, No. 25, June 2025
Sojin Jung, Jaewook Yoo, Hongseung Lee, Seohyeon Park, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Minah Park, Jin-Ha Hwang, Gang Qiu, TaeWan Kim, Kiyoung Lee*, and Hagyoul Bae*
[99]
Subthermionic Steep-Slope MoS2/MoO3/MoS2 Tunneling Field-Effect Transistor with Extremely Low Off-state Current Level [link]
ACS Applied Electronic Materials, vol. 7, no. 11, May 2025
Dong Hyun Seo, Ji Won Heo, Jong Min Song, Hagyoul Bae, TaeWan Kim*
[98]
Exploration of interplay between charge trapping dynamics and polarization switching in α-In2Se3 ferroelectric semiconductor FETs [link]
IEEE Electron Device Letters, vol. 46, no. 7, May 2025
Minah Park, Jaewook Yoo, Seohyeon Park, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Sojin Jung, Gang Qiu, Sungjune Park, TaeWan Kim, Peide D. Ye, and Hagyoul Bae*
[97]
A sub-thermionic steep-slope MoS2/MoO3/MoS2 tunneling field-effect transistor with extremely low off-state current level [link]
ACS Applied Electronic Materials, vol. 7, no. 11, May 2025
Dong Hyun Seo, Ji Won Heo, Jong Min Song, Hagyoul Bae*, and TaeWan Kim*
[96]
Determination of donor- and acceptor-like interface trap density using photoresponsive GIDL in vertically stacked Si-NW GAA FETs [link]
Applied Physics Letters, vol. 126, no. 12, March 2025 Editor's Pick
Seohyeon Park, Jaewook Yoo, Minah Park, Hongseung Lee, Hyeonjun Song, Seonbin Lim, Soyeon Kim, Sojin Jung, TaeWan Kim, Yang-Kyu Choi, Hagyoul Bae*
[95]
Low-frequency noise and DC I-V characterization of gamma-ray radiation-induced degradation and trap behaviors in a-IGZO TFTs
Applied Physics Letters, vol. 126, no. 6, February 2025
Hongseung Lee, Jaewook Yoo, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Seongbin Lim, Jo Hak Jeong, Soyeon Kim, Minah Park, Seohyeon Park, Sojin Jung, Bhishma Pandit, Taehwan Moon, Jin-Ha Hwang, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo*, and Hagyoul Bae*
[94]
Quantitative analysis of trap behaviors for deuterium annealing effect on IGZO TFTs by TCAD and experimental characterization
IEEE Transactions on Electron Devices, vol. 72, no. 3, March 2025
Hyeonjun Song, Soon Joo Yoon, Jaewook Yoo, Seongbin Lim, Ja-Yun Ku, Hongseung Lee, Jo Hak Jeon, Soyeon Kim, Kiyoung Lee, Hyeon-Sik Jang, Keun Heo, Jun-Young Park, Yoon Kyeung Lee*, and Hagyoul Bae*
[93]
Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD
Materials Science in Semiconductor Processing, vol. 188, no. 15, March 2025
Gyeong Deok Seo, Gi Dan Shim, Seung Yong Baek, Sungjune Park, Hagyoul Bae*, and TaeWan Kim*
[92]
Low-frequency noise related to scattering effect in p-type copper(Ⅰ) oxide thin film transistors
ACS Applied Materials & Interfaces, vol. 17, no. 2, December 2024
Jaewook Yoo, Seohyeon Park, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Minah Park, Soyeon Kim, Jo Hak Jeon, JungWoo Bong, Keun Heo, Kiyoung Lee, TaeWan Kim, Peide D. Ye, Hagyoul Bae*[91]
An in-depth study of the synthesis of ReSe2 for anisotropic Raman characteristics
Journal of Physics: Materials, vol. 7, no. 4, October 2024
Giho Nam, Sohyeon Park, Keun Heo, Jungwoo Bong, DongGyu Lee, Hyunsoo Kim, Krishna Moorthy Ponnusamy, Hagyoul Bae, Hyeong Gi Park, Jae-Hyun Lee
[90]
Rapid thermal annealing under O2 ambient to recover the reliability deteriorated by gamma-ray irradiation in a-IGZO TFTs
Electronic Materials Letters, vol. 21, October 2024
Minah Park, Jaewook Yoo, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Seohyeon Park, Jo Hak Jeong, Bongjoong Kim, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Jiseok Kwon*, and Hagyoul Bae*
[89]
Characterization of bulk trap density using fully I-V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs
Journal of Physics D: Applied Physics, vol. 57, no. 48, September 2024
, Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Minah Park, Seohyeon Park, Choong-Ki Kim, TaeWan Kim, Bongjoong Kim*, and Hagyoul Bae*
[88]
Compositionally graded MoS2xTe2(1-x)/MoS2 van der waals heterostructures for ultra-Thin photovoltaic applications
ACS Applied Materials & Interfaces, vol. 16, no. 11, August 2024
Dong Hyun Seo, Guen Hyung Oh, Jong Min Song, Ji Won Heo, Sungjune Park, Hagyoul Bae, Joo Hyung Park, and TaeWan Kim*
[87]
Resetting the drift of oxygen vacancies in ultrathin HZO ferroelectric memories by electrical pulse engineering
Small, vol. 4, no. 11, November 2024
Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk-Hyun Choe, Maximilian T. Becker, Judith L. Macmanus-Driscoll, Jinseong Heo, Giuliana Di Martino
[86]
Characteristics of metal contact to GaS films and photodetector applications
Journal of the Korean Ceramic Society, vol. 85, no. 7, August 2024.
Ju Won Kim, Hagyoul Bae, Joo Hyung Park, TaeWan Kim
[85]
Deep learning-assisted design of bilayer nanowire gratings for high-performance MWIR polarizers
Advanced Materials Technologies, vol. 9, no. 19, 2024.
Junghyun Lee, Junhyuk Oh, Hyung-gun Chi, Minseok Lee, Jehwan Hwang, Seungjin Jeong, Sang-Woo Kang, Haeseong Jee, Hagyoul Bae, Jae-Sang Hyun, Jun Oh Kim*, Bongjoong Kim*
[84]
Direct observation for distinct behaviors of gamma-ray irradiation-induced subgap density-of-states in amorphous InGaZnO TFTs by multiple-wavelength light source
Advanced Electronic Materials, vol. 10, no. 8, 2024.
Jaewook Yoo, Hyeun Seung Jo, Seung-Bae Jeon, Taehwan Moon, Hongseung Lee, Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Soyeon Kim, Minah Park, Seohyeon Park, Jo Hak Jeong, Keun Heo, Yoon Kyeung Lee, Peide D. Ye, TaeWan Kim*, and Hagyoul Bae*
[83]
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β–Ga2O3 FinFET
Solid-State Electronics, vol. 215, May 2024.
Hagyoul Bae, Geon Bum Lee, Jaewook Yoo, Khwang-Sun Lee, Ja-Yun Ku, Kihyun Kim, Jungsik Kim, Peide D. Ye, Jun-Young Park*, and Yang-Kyu Choi*
[82]
Simulational investigation of Self-Aligned Bilayer Linear Grating Enabling Highly Enhanced Responsivity of MWIR InAs/GaSb Type-II Superlattice (T2SL) Photodetector
Scientific Reports, vol. 14, no. 2050, January 2024
Minseok Lee, Zahyun Ku, Seungjin Jeong, Jehwan Hwang, Junghyun Lee, Junoh Kim, Sang-Woo Kang, Augustine Urbas, Hagyoul Bae*, Bongjoong Kim*
[81]
Interfacial layer selection methodology for customized ferroelectric memories
IEEE Transactions on Electron Devices, vol. 71, no. 3, March 2024
Hyun Jae Lee, Taehwan Moon, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yunseong Lee, Yoonsang Park, Kihong Kim, and Jinseong Heo
[80]
Comprehensive study on trap-induced bias instability via high-pressure D2 and N2 annealing
IEEE Transactions on Device and Materials Reliability, vol. 23, no. 2, June 2023
Ja-Yun Ku, Khwan-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Seyoung Oh, Kiyoung Lee, Byungjin Cho, Hagyoul Bae*, and Jun-Young Park*[79]
Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing
Neuromorphic Computing and Engineering, vol. 3, no. 2, June 2023
Taehwan Moon , Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J. Joshua Yang, and Jinseong Heo[78]
Recent research for HZO-based ferroelectric memory towards in-memory computing applications
Electronics, vol. 12, no. 10, May 2023
Jaewook Yoo, Hyeonjun Song, Hongseung Lee, Seongbin Lim, Soyeon Kim, Keun Heo*, and Hagyoul Bae*[77]
Negative differential capacitance in ultrathin ferroelectric hafnia
Nature Electronics, vol. 6, no. 5, May 2023
Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Yunseok Kim, Owoong Kwon, Seunggeol Nam, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Myongho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Yoonsang Park, Eunha Lee, and Jinseong Heo*[76]
In-operando optical tracking of oxygen vacancy migration and phase change in few-nm ferroelectric HZO memories
Advanced Functional Materials, vol. 33, no. 22, March 2023
Atif Jan, Thomas Rembert, Sunil Taper, Joanna Symonowicz, Taehwan Moon , Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk-Hyun Choe, Jinseong Heo, Judith MacManus-Driscoll, Bartomeu Monserrat, Giuliana Di Martino*[75]
On-state current degradation owing to displacement defect by terrestrial cosmic rays in nanosheet FET
Micromachines, vol. 13, no. 8, August 2022
Jonghyeon Ha, Gyeongyeop Lee, Hagyoul Bae, Kihyun Kim, Jin-Woo Han, and Jungsik Kim*[74]
Influence of radiation-induced displacement defect in 1.2kV SiC metal-oxide-semiconductor field-effect transistors
Micromachines, vol. 13, no. 6, June 2022
Gyeongyeop Lee, Jonghyeon Ha, Kihyun Kim, Hagyoul Bae, Chong-Eun Kim, and Jungsik Kim*[73]
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Science, vol. 376, no. 6594, May 2022
Seunghun Kang, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo*, Sergei V. Kalinin*, Young-Min Kim*, and Yunseok Kim*[72]
Chemically-etched optical fiber tapers for adiabatic fundamental mode evolution over O- and C-bands
Journal of Lightwave Technology, vol. 40, no. 14, July 2022
Gyeongho Son, Rizki Arif Pradono, Jiwon Choi, Youngjae Jeong, Dae Seok Han, Mohamad Syahadi, Youngho Jung, Kyungmok Kwon, Hagyoul Bae, and Kyoungsik Yu*2021
[71] Hagyoul Bae, Tae Joon Park, Jinhyun Noh, Wonil Chung, Mengwei Si, Shriram Ramanathan, and Peide D. Ye*, “First demonstration of robust tri-gate β–Ga2O3 nano-membrane field-effect transistors,” Nanotechnology, vol. 33, no. 12, Dec. 2021.[PDF]
[70] Hagyoul Bae†, Geon-Beom Lee† (co-1st author), Jae-Hur, Jun-Young Park, Da-Jin Kim, Myung-Su Kim, and Yang-Kyu Choi*, “Gateless and capacitorless germanium biristor with a vertical pillar structure,” Micromachines, vol. 12, no. 8, Jul. 2021. [PDF]
[69] Duk-Hyun Choe, Sung Hyun Kim, Taehwan Moon, Sanhyun Jo, Hagyoul Bae, Seung Geol Nam, Yunseong Lee, and JInseong Heo*, “Unexpectedly low barrier of ferroelectric switching in HFO2 via topological domain walls,” Materials Today, 2021 (Just Accepted) [PDF]
[68] Hagyoul Bae, Khwang-Sun Lee, Peide D. Ye, and Jun-Young Park*, “Current annealing to improve drain output performance of β-Ga2O3 field-effect transistors,” Solid-State Electronics, vol. 185, 108134, Nov. 2021. [PDF]
[67] Hagyoul Bae* (co-corresponding), Adam R. Charnas, Wonil Chung, Mengwei Si, Xiao Lyu, Xing Sun, Joon Park, Haiyan Wang, Dmitry Zemlyanov, and Peide D. Ye*, “Ultrathin transparent copper(I) oxide films grown by plasma-enhanced atomic layer deposition for back-end-of-line p-type transistors,” IOP Nanoexpress, vol. 2, no. 2, Jun. 2021. [PDF]
[66] Jinhyun Noh†, Hagyoul Bae† (co-1st author), Junkang Li, Yandong Luo, Yiming Qu, Tae Joon Park, Mengwei Si, Xuegang Chen, Adam R. Charnas, Wonil Chung, Xiaochen Peng, Shriram Ramanathan, Shimeng Yu, and Peide D. Ye*, “First experimental demonstration of robust HZO/β-Ga2O3 ferroelectric field-effect transistors as synaptic devices for artificial intelligence applications in high temperature environment,” IEEE Trans. on Electron Devices, vol. 68, no. 5, Mar. 2021. [PDF]
[65: arXiv] Hagyoul Bae, Tae Joon Park, Jinhyun Noh, Wonil Chung, Mengwei Si, Shriram Ramanathan, and Peide D. Ye*, “First demonstration of robust tri-gate β–Ga2O3 nano-membrane field-effect transistors operated up to 400℃,” arXiv:2105.01721, 2021. [PDF]
2020
[64] Sami Alghamdi, Mengwei Si, Hagyoul Bae, Hong Zhou, and Peide D. Ye*, “Single pulse charge pumping measurements on AlGaN/GaN MOSHEMT: fast and reliable extraction of interface traps density,” IEEE Trans. on Electron Devices, vol. 67, no. 2, pp. 444‒448, Jan. 2020. [PDF]
2019
[63] Hagyoul Bae, Adam R. Charnas, Xing Sun, Jinhyun Noh, Mengwei Si, Wonil Chung, Gang Qiu, Xiao Lyu, Sami Alghamdi, Haiyan Wang, Dmitry Zemlyanov, and Peide D. Ye*, “Solar-blind UV photodetector based on atomic layer deposited Cu2O and nano-membrane β-Ga2O3 pn oxide heterojunction,” ACS Omega, vol. 4, no. 24, pp. 20756-20761, Nov. 2019. [PDF]
[62] Jinhyun Noh, Sami Alajlouni, Marko J. Tadjer, Hagyoul Bae, James C. Culbertson, Mengwei Si, Hong Zhou, Peter A. Bermel, Ali Shakouri, and Peide D. Ye*, “High performance β-Ga2O3 nano-membrane field effect transistors on a high thermal conductivity diamond substrate,” IEEE J. of Electron Device Society, vol. 7, pp. 914-9188, Aug. 2019. [PDF]
[61] Hagyoul Bae†, Daewon Kim† (co-1st author), Myungsoo Seo, Ik Kyeong Jin, Seung-Bae Jeon, Hye Moon Lee, Soo-Ho Jung, Byung Chul Jang, Gyeongho Son, Kyoungsik Yu, Sung-Yool Choi, and Yang-Kyu Choi*, “Bioinspired polydopamine-based resistive switching memory on cotton fabric for wearable neuromorphic device applications,” Adv. Mater. Tech. vol. 4, no. 8, p. 1900151, Aug. 2019. [PDF]
[60] Jae Kwon, Byung-Hyun Lee, Seong-Yeon Kim, Jun-Young Park, Hagyoul Bae, Yang-Kyu Choi, and Jae-Hyuk Ahn*, “Nanoscale FET-based transduction toward sensitive extended-gate biosensors,” ACS Sensors, vol. 4, no. 6, pp. 1724-1729, Jun. 2019. [PDF]
[59] Sang-Jae Park, Sang Han Lee, Myeong-Lok Seol, Seung-Bae Jeon, Hagyoul Bae, Daewon Kim, Gyu-Hyeong Cho, and Yang-Kyu Choi*, “Self-sustainable wind speed sensor system with omni-directional wind based triboelectric generator,” Nano Energy, vol. 55, pp. 115-122, Jan. 2019. [PDF]
2018
[58] Jae Hur, Byung Chul Jang, Jihun Park, Dong-Il Moon, Hagyoul Bae, Jun-Young Park, Gun-Hee Kim, Seung-Bae Jeon, Myungsoo Seo, Sungho Kim, Sung-Yool Choi, and Yang-Kyu Choi*, “A recoverable synapse device using a three-dimensional silicon transistor,” Adv. Func. Mater., vol. 28, no. 47, p. 1804844, Oct. 2018. [PDF]
[57] Jun-Young Park, Weon-Guk Kim, Hagyoul Bae, Ik Kyeong Jin, Da-Jin Kim, Hwon Im, Il-Woong Tcho, and Yang-Kyu Choi*, “On-chip curing by microwave for long term usage of electronic devices in harsh environments,” Scientific Reports, vol. 8, no. 1, p. 14953, Oct. 2018. [PDF]
[56] Ik Kyeong Jin, Jun-Young Park, Byung-Hyun Lee, Seung-Bae Jeon, Il-Woong Tcho, Sang-Jae Park, Weon-Guk Kim, Jun-Kyu Han, Seung-Wook Lee, Seong-Yeon Kim, Hagyoul Bae, Daewon Kim, and Yang-Kyu Choi*, “Self-powered data erasing of a nanoscale flash memory by triboelectricity,” Nano Energy, vol. 52, pp. 63-70, Oct. 2018. [PDF]
[55] Hagyoul Bae, Jinhyun Noh, Sami Alghamdi, Mengwei Si, and Peide D. Ye*, “Ultraviolet light-based current-voltage method for simultaneous extraction of donor- and acceptor-like interface traps in β-Ga2O3 FETs,” IEEE Electron Device Letters, vol. 39, no. 11, pp. 1708-1711, Nov. 2018. [PDF]
[54] Gun-Hee Kim, Hagyoul Bae, Jae Hur, Choong-Ki Kim, Geon-Bum Lee, Taewook Bang, and Yang-Kyu Choi*, “Reply to comments by Ortiz-Conde et al,” IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 4022‒4024, Aug. 2018. [PDF]
[53] Myungsoo Seo, Min Ho Kang, Seung-Bae Jeon, Hagyoul Bae, Jae Hur, Byung Chul Jang, Seokjung Yun, Seongwoo Cho, Myung-Su Kim, Kyu-Man Hwang, Seungbum Hong, Sung-Yool Choi, and Yang-Kyu Choi*, “First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications,” IEEE Electron Device Letters, vol. 39, no. 9, pp. 1445-1448, Sep. 2018. [PDF]
[52] Do-Hyun Kim, Sung Kwan Lim, Hagyoul Bae, Choong-Ki Kim, Seung-Wook Lee, Myungsoo Seo, Seong-Yeon Kim, Kyu-Man Hwang, Geon-Bum Lee, Byoung Hun Lee, and Yang-Kyu Choi*, “Quantitative analysis of deuterium annealing effect on poly-Si TFTs by low frequency noise and DC I-V characterization,” IEEE Trans. Electron Devices, vol. 65, no. 4, pp. 1640‒1644, Apr. 2018. [PDF]
[51] Hagyoul Bae†, Sungwoo Jun† (co-1st author), Choong-Ki Kim, Byeong-Kwon Ju*, and Yang-Kyu Choi*, “Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing,” Journal of Physics D: Applied Physics, vol. 51, no. 10, p. 105102, Feb. 2018. [PDF]
[50] Jun-Young Park, Byung-Hyun Lee, Geon-Beom Lee, Hagyoul Bae, and Yang-Kyu Choi*, “Localized electrothermal annealing with nanowatt power for a silicon nanowire field-effect transistor,” ACS Appl. Mater. Inter., vol. 10, no. 5, pp. 4838‒4843, Jan. 2018. [PDF]
[49] Gun-Hee Kim, Hagyoul Bae, Jae Hur, Choong-Ki Kim, Geon-Bum Lee, Tewook Bang, Yoon-Ik Son, Seong-Wan Ryu, and Yang-Kyu Choi*, “Highly biased linear condition method for separately extracting source and drain resistance in MOSFETs,” IEEE Trans. on Electron Devices, vol. 65, no. 2, pp. 419‒423, Feb. 2018. [PDF]
2017
[48] Kyu-Man Hwang, Jun-Young Park, Hagyoul Bae, Seung-Wook Lee, Choong-Ki Kim, Myungsoo Seo, Hwon Im, Do-Hyun Kim, Seong-Yeon Kim, Geon-Beom Lee, and Yang-Kyu Choi*, “Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments,” ACS Nano, vol. 11, no. 12, pp. 12547‒12552, Dec. 2017. [PDF]
[47] Hagyoul Bae†, Byung Chul Jang† (co-1st author), Hongkeun Park, Soo-Ho Jung, Hye Moon Lee, Jun-Young Park, Seung-Bae Jeon, Gyeongho Son, Il-Woong Tcho, Kyoungsik Yu, Sung-Gap Im, Sung-Yool Choi*, and Yang-Kyu Choi*, “Functional circuitry on commercial fabric via textile-compatible nanoscale film coating process for fibertronics,” Nano Lett., vol. 17, no. 10, pp. 6443-6452, Sep. 2017. [PDF]
[46] Jun-Young Park, Byung-Hyun Lee, Ki Soo Chang, Dong Uk Kim, Chanbae Jeong, Choong-Ki Kim, Hagyoul Bae, and Yang-Kyu Choi*, “Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels,” IEEE Trans. on Electron Devices, vol. 64, no. 11, pp. 4393‒4399, Nov. 2017. [PDF]
[45] Hagyoul Bae, Choong-Ki Kim, and Yang-Kyu Choi*, “Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique,” AIP Advances, vol. 7, no.7, p. 075304, Jul. 2017. [PDF]
[44] Geon-Beom Lee, Choong-Ki Kim, Jun-Young Park, Tewook Bang, Hagyoul Bae, Seong-Yeon Kim, Seung-Wan Ryu, and Yang-Kyu Choi*, “A novel technique for curing hot-carrier-induced damage by utilizing the forward current of the PN-junction in a MOSFET,” IEEE Electron Device Letters, vol. 38, no. 8, pp. 1012-1014, Aug. 2017. [PDF]
[43] Seung-Wook Lee†, Tewook Bang† (co-1st author), Choong-Ki Kim, Kyu-Man Hwang, Byung Chul Jang, Dong-Il Moon, Hagyoul Bae, Myungsoo Seo, Seong-Yeon Kim, Do-Hyun Kim, Sung-Yool Choi, and Yang-Kyu Choi*, “Comprehensive study on the relation between low-frequency noise and asymmetric parasitic resistances in a vertical pillar-type FET,” IEEE Electron Device Letters, vol. 38, no. 8, pp. 1008‒1011, Aug. 2017. [PDF]
[42] Hagyoul Bae, Tewook Bang, Choong-Ki Kim, Jae Hur, Se-Yeob Kim, Chang-hoon Jeon, Jun-Young Park, Dae-Chul Ahn, Gun-Hee Kim, Yun-Ik Son, Jae-Hoon Lee, Yong-Taik Kim, and Yang-Kyu Choi*, “Improved technique for extraction of effective mobility by considering gate bias-dependent inversion charges in floating-body Si/SiGe pMOSFET,” Journal of Nanoscience and Nanotechnology, vol. 17, no. 5, pp. 3245-3250, May 2017. [PDF]
2016
[41] Choong-Ki Kim†, Eun Gyo Jeong† (co-1st author), Eungtaek Kim, Jeong-Gyu Song, Youngjun Kim, Whang Je Woo, Myung Keun Lee, Hagyoul Bae, Seong-Bae Jeon, HyungjunKim, Kyung Cheol Choi*, and Yang-Kyu Choi*, “Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation,” Nanotechnology, vol. 28, no. 5, p. 055203, Dec. 2016. [PDF]
[40] Byung-Hyun Lee†, Dong-Il Lee† (co-1st author), Hagyoul Bae, Hyejeong Seong, Seung-Bae Jeon, Myung-Lok Seol, Jin-Woo Han, Meyya Meyyappan, Sung-Gap Im, and Yang-Kyu Choi*, “Foldable and disposable memory on paper,” Scientific Reports, vol. 6, p. 38389, Dec. 2016. [PDF]
[39] Hagyoul Bae†, Byung-Hyun Lee† (co-1st author), Dongil Lee, Myeong-Lok Seol, Daewon Kim, Jin-Woo Han, Choong-Ki Kim, Seung-Bae Jeon, Daechul Ahn, Sang-Jae Park, Jun-Young Park, and Yang-Kyu Choi*, “Physically transient memory on a rapidly dissoluble paper for security application,” Scientific Reports, vol. 6, p. 38324, Dec. 2016. [PDF]
[38] Jun-Young Park, Hagyoul Bae, Dong-Il Moon, Chang-Hoon Jeon, and Yang-Kyu Choi*, “Threshold voltage tuning technique in gate-all-around MOSFETs by utilizing gate electrode with potential distribution,” IEEE Electron Device Letters, vol. 37, no. 11, pp. 1391‒1394, Nov. 2016. [PDF]
[37] Choong-Ki Kim, Eungtaek Kim (co-1st author), Myung Keun Lee, Jun-Young Park, Myeong-Lok Seol, Hagyoul Bae, Tewook Bang, Seung-Bae Jeon, Sang-Hee Park, Kyung Cheol Choi*, and Yang-Kyu Choi*, “Electrothermal annealing (ETA) method to enhance the electrical performance of amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs),” ACS Appl. Mater. Inter., vol. 8, no. 36, pp. 23820‒23826, Aug. 2016. [PDF]
[36] Byung-Hyun Lee, Dae-Chul Ahn, Min-Ho Kang, Seung-Bae Jeon, Tewook Bang, Hagyoul Bae, Jun-Young Park, Dae-Won Hong, Nam-Soo Park, and Yang-Kyu Choi*, “Vertically integrated ZRAM toward extremely scaled memory,” ECS Transactions, vol. 75, no. 5, 311‒316, Aug. 2016. [PDF]
[35] Jun-Young Park, Dong-Il Moon, Hagyoul Bae, Young Tak Roh, Myeong-Lok Seol, Byung-Hyun Lee, Chang-Hoon Jeon, Hee-Chul Lee, and Yang-Kyu Choi*, “Local electro-thermal annealing for repair of total ionizing dose-induced damage in gate-all-around MOSFETs,” IEEE Electron Device Letters, vol. 37, no. 7, pp. 843‒846, Jul. 2016. [PDF]
[34] Dongil Lee†, Jinsu Yoon, Juhee Lee, Byung-Hyun Lee, Myeong-Lok Seol, Hagyoul Bae, Seung-Bae Jeon, Hyejeong Seong, Sung Gap Im, Sung-Jin Choi*, and Yang-Kyu Choi*, “Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric,” Scientific Reports, vol. 6, p. 26121, May 2016. [PDF]
[33] Chang-Hoon Jeon, Jun-Young Park, Myeong-Lok Seol, Dong-Il Moon, Jae Hur, Hagyoul Bae, Seung-Bae Jeon, and Yang-Kyu Choi*, “Joule heating to enhance the performance of a gate-all-around silicon nanowire transistor,” IEEE Trans. on Electron Devices, vol. 63, no. 6, pp. 2288‒2292, Jun. 2016. [PDF]
[32] Ui-Sik Jeong†, Choong-Ki Kim† (co-1st author), Hagyoul Bae, Doog-Il Moon, Tewook Bang, Ji-Min Choi, Jae Hur, and Yang-Kyu Choi*, “Investigation of low-frequency noise in nonvolatile memory composed of a gate-all-around junctionless nanowire FET,” IEEE Trans. on Electron Devices, vol. 63, no. 5, pp. 2210‒2213, May 2016. [PDF]
[31] Choong-Ki Kim†, Chan Hak Yu† (co-1st author), Jae Hur, Hagyoul Bae, Seung-Bae Jeon, Hamin Park, Yong Min Kim, Kyung Cheol Choi, Yang-Kyu Choi*, and Sung-Yool Choi*, “Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps,” 2D Materials, vol. 3, no. 1, p. 015007, Feb. 2016. [PDF]
[30] Jun-Young Park, Dong-Il Moon, Myeong-Lok, Seol, Choong-Ki Kim, Chang-Hoon Jeon, Hagyoul Bae, Tewook Bang, and Yang-Kyu Choi*, “Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection,” IEEE Trans. Electron Devices, vol. 63, no. 3, pp. 910‒915, Mar. 2016. [PDF]
[29] Hagyoul Bae†, Choong-Ki Kim† (co-1st author), Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun Kim, Hyungjun Kim, Sung-Yool Choi, Kyung Cheol Choi, and Yang-Kyu Choi*, “A separate extraction method for asymmetric source and drain resistances using frequency-dispersive C-V characteristics in exfoliated MoS2 FET,” IEEE Electron Device Letters, vol. 37, no. 2, pp. 231-233, Feb. 2016. [PDF]
2015
[28] Byung-Hyun Lee†, Hagyoul Bae† (co-1st author), Hyejeong Seong, Dong-Il Lee, Hongkeun Park, Sung-Gap Im, and Yang-Kyu Choi*, “Direct observation of carbon filament in water-resistant organic memory,” ACS Nano, vol. 9, no. 7, pp. 7306-7313, Jun. 2015. [PDF]
[27] Hyunjun Choi, Jungmin Lee, Hagyoul Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim, “Bias-dependent effective channel length for extraction of subgap DOS by capacitance-voltage characteristics in amorphous semiconductor TFTs,” IEEE Trans. on Electron Devices, vol. 62, no. 8, pp. 2689‒2694, Aug. 2015. [PDF]
[26] Jun Seok Hwang, Hagyoul Bae, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Sub-bandgap photonic capacitance-voltage method for characterization of the interface traps in low temperature poly-silicon thin-film transistors,” IEEE Electron Device Letters, vol. 36, no. 4, pp. 339‒341, Apr. 2015. [PDF]
[25] Jungmin Lee, Hagyoul Bae, Jun Seok Hwang, Jaeyeop Ahn, Jun Tae Jang, Jinsoo Yoon, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Modeling and separate extraction technique for gate bias-dependent parasitic resistances and overlap length in MOSFETs,” IEEE Trans. Electron Devices, vol. 62, no. 3, pp. 1063‒1067, Mar. 2015. [PDF]
[24] Sungwoo Jun, Hagyoul Bae, Hyeongjung Kim, Jungmin Lee, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Dual-sweep combinational trans-conductance technique for separate extraction of parasitic resistances in amorphous thin-film transistors,” IEEE Electron Device Letters, vol. 36, no. 2, pp. 144‒146, Feb. 2015. [PDF]
2014
[23] Hagyoul Bae, Hyojoon Seo, Sungwoo Jun, Hyunjun Choi, Jaeyeop Ahn, Junseok Hwang, Jungmin Lee, Saeroonter Oh, Jong-Uk Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Fully current-based sub-bandgap optoelectronic differential ideality factor technique and extraction of subgap DOS in amorphous semiconductor TFTs,” IEEE Trans. Electron Devices, vol. 61, no. 10, pp. 3566-3569, Oct. 2014. [PDF]
2013
[22] Hagyoul Bae, Hyunjun Choi, Sungwoo Jun, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Saeroonter Oh, Jonguk Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Single-scan monochromatic photonic capacitance-voltage technique for extraction of subgap DOS over the bandgap in amorphous semiconductor TFTs,” IEEE Electron Device Letters, vol. 34, no. 12, pp. 1524-1526, Dec. 2013. [PDF]
[21] Jaewook Lee, Sungwoo Jun, Jaeman Jang, Hagyoul Bae, Hyeongjung Kim, Jong Won Chung, Sung-Jin Choi, Dae Hwan Kim, Jiyoul Lee, and Dong Myong Kim*, “Fully transfer characteristic-based technique for surface potential and subgap density of states in p-channel polymer-based TFTs,” IEEE Electron Device Letters, vol. 34, no. 12, pp. 1521‒1523, Dec. 2013. [PDF]
[20] Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Chunhyung Jo, Yun Hyeok Kim, Jun Seok Hwang, Jaeyeop Ahn, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Separate extraction technique for intrinsic donor- and acceptor-like density-of-states over full-energy range sub-bandgap in amorphous oxide semiconductor thin film transistors by using one-shot monochromatic photonic capacitance-voltage characteristics,” SID Symposium Digest of Technical Papers, vol. 44, no. 1, pp. 1033-1036, Jun. 2013. (Distinguish Poster Paper) [PDF]
[19] Chunhyung Jo, Hagyoul Bae, Sungwoo Jun, Hyunjun Choi, Seonwook Hwang, Dae Hwan Kim, Dong Myong Kim, Byung-Du Ahn, Je-Hun Lee, and Junho Song*, “Characterization of asymmetrical negative bias stress effect on the density-of-states and parasitic resistances in a-IGZO thin-film transistors,” SID Symposium Digest of Technical Papers, vol. 44, no. 1, pp. 1070-1073, Jun. 2013. [PDF]
[18] Chunhyung Jo, Sungwoo Jun, Woojoon Kim, Inseok Hur, Hagyoul Bae, Sung-Jin Choi, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress,” Applied Physics Letters, vol. 102, no. 14, pp. 143502-1‒143502-5, Apr. 2013. [PDF]
[17] Sungwoo Jun, Chunhyung jo, Hagyoul Bae, Hyunjun Choi, Dae Hwan Kim, and Dong Myong Kim*, “Unified subthreshold coupling factor technique for surface potential and subgap density-of-states in amorphous thin film transistors,” IEEE Electron Device Letters, vol. 34, no. 5, pp. 641‒643, May 2013. [PDF]
[16] Inseok Hur, Hagyoul Bae, Woojoon Kim, Jaehyeong Kim, Hyun Kwang Jeong, Chunhyung Jo, Sungwoo Jun, Jaewook Lee, Yun Hyeok Kim, Dae Hwan Kim, and Dong Myong Kim*, “Characterization of intrinsic field-effect mobility in TFTs by de-embedding the effect of parasitic source and drain resistance,” IEEE Electron Device Letters, vol. 34, no. 2, pp. 250‒252, Feb. 2013. [PDF]
[15] Hagyoul Bae, Hyunjun Choi, Saeroonter Oh, Dae Hwan Kim, Jonguk Bae, Jaehyeong Kim, Yun Hyeok Kim, and Dong Myong Kim*, “Extraction technique for intrinsic subgap-DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement,” IEEE Electron Device Letters, vol. 34, no. 1, pp. 57-59, Jan. 2013. [PDF]
2012
[14] Hagyoul Bae, Sungwoo Jun, Choon Hyeong Jo, Hyunjun Choi, Jaewook Lee, Yun Hyeok Kim, Seonwook Hwang, Hyun Kwang Jeong, Inseok Hur, Woojoon Kim, Daeyoun Yun, Euiyeon Hong, Hyojoon Seo, Dae Hwan Kim, and Dong Myong Kim*, “Modified conductance method for extraction of susbgap density-of-states in a-IGZO thin-film transistors,” IEEE Electron Device Letters, vol. 33, no. 8, pp. 1138-1140, Aug. 2012. [PDF]
[13] Ja Sun Shin, Hagyoul Bae, Euiyoun Hong, Jaeman Jang, Daeyoun Yun, Jieun Lee, Dae Hwan Kim, Dong Myong Kim*, “Modeling and extraction technique for parasitic resistances in MOSFETs combining DC I-V and low frequency C-V measurement,” Solid-State Electronics, vol. 72, pp. 78‒81, Jun. 2012. [PDF]
[12] Euiyoun Hong, Daeyoun Yun, Hagyoul Bae, Hyunjun Choi, Won Hee Lee, Mihee Uhm, Hyojoon Seo, Jieun Lee, Jaeman Jang, Dae Hwan Kim, and Dong Myong Kim*, “Subbandgap optical differential body-factor technique and characterization of interface states in SOI MOSFETs,” IEEE Electron Device Letters, vol. 33, no. 7, pp. 922‒924, Jul. 2012. [PDF]
[11] Hagyoul Bae, Inseok Hur, Ja Sun Shin, Daeyoun yun, Euiyoun Hong, Keum-Dong Jung, Mun-Soo Park, Sunwoong Choi, Won Hee Lee, Mihee Uhm, Dae Hwan Kim, and Dong Myong Kim*, “Hybrid C-V and I-V technique for separate extraction of structure- and bias-dependent parasitic resistances in a-InGaZnO TFTs,” IEEE Electron Device Letters, vol. 33, no. 4, pp. 534-536, Apr. 2012. [PDF]
[10] Seok Cheon Baek, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim*, “Avalanche hot source method for separated extraction of parasitic source and drain resistances in single metal-oxide-semiconductor field effect transistors,” Journal of Semiconductor Technology and Science, vol. 12, no. 1, pp. 46‒52, Mar. 2012. [PDF]
[9] Ja Sun Shin, Hyunjun Choi, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Euiyoun Hong, Dae Hwan Kim, and Dong Myong Kim*, “Vertical-gate Si/SiGe double-HBT-based capacitorless 1T DRAM cell for extended retention time at low latch voltage,” IEEE Electron Device Letters, vol. 33, no. 2, pp. 134‒136, Feb. 2012. [PDF]
2011
[8] Jun-Hyun Park, Yongsik Kim, Sungchul Kim, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim*, “Surface-potential-based analytic DC I-V model with effective electron density for a-IGZO TFTs considering the parasitic resistance,” IEEE Electron Device Letters, vol. 32, no. 11, pp. 1540-1542, Nov. 2011. [PDF]
[7] Daeyoun Yun, Minkyung Bae, Jaeman Jang, Hagyoul Bae, Ja Sun Shin, Euiyeon Hong, Jieun Lee, Dae Hwan Kim, and Dong Myong Kim*, “Differential body-factor technique for characterization of interface traps in MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 9, pp. 1206‒1208, Sep. 2011. [PDF]
[6] Ja Sun Shin, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Jieun Lee, Dae Hwan kim, and Dong Myong Kim*, “A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time,” Semiconductor Science and Technology, vol. 26, no. 9, p. 095025, Aug. 2011. [PDF]
[5] Ja Sun Shin, Hagyoul Bae, Jaeman Jang, Daeyoun Yun, Jieun Lee, Euiyoun Hong, Dae Hwan Kim, and Dong Myong Kim*, “A novel double HBT-based capacitorless 1T DRAM cell with Si/SiGe heterojunctions,” IEEE Electron Device Letters, vol. 32, no. 7, pp. 850‒852, Jul. 2011. [PDF]
[4] Hagyoul Bae, Jaeman Jang, Ja Sun Shin, Daeyoun Yun, Jieun Lee, Tae Wan Kim, Dae Hwan Kim, and Dong Myong Kim*, “Modeling and separate extraction of gate-bias- and channel-length-dependent intrinsic and extrinsic source-drain resistances in MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 6, pp. 722-724, Jun. 2011. [PDF]
[3] Hagyoul Bae, Sungchul Kim, Minkyung Bae, Ja Sun Shin, Dongsik Kong, Hyunkwang Jung, Jaeman Jang, Jieun Lee, Dae Hwan Kim, Dong Myong Kim*, “Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc-Oxide TFTs through C-V characterization,” IEEE Electron Device Letters, vol. 32, no. 6, pp. 761-763, Jun. 2011. [PDF]
[2] Sunyeong Lee, Ja Sun Shin, Jaeman Jang, Hagyoul Bae, Daeyoun Yun, Jieun Lee, Dae Hwan Kim, and Dong Myong Kim*, “A novel capacitorless DRAM Cell using superlattice bandgap-engineered (SBE) structure with 30-nm channel length,” IEEE Transactions on Nanotechnology, vol. 10, no. 5, pp. 1023‒1030, Sep. 2011. [PDF]
2010
[1] Hagyoul Bae, Seok Cheon Baek, Sunyeong Lee, Jaeman Jang, Ja Sun Shin, Daeyoun Yun, Hyojong Kim, Dae Hwan Kim, and Dong Myong Kim*, “Separate extraction of source, drain, and substrate resistances in MOSFETs with parasitic junction current method,” IEEE Electron Device Letters, vol. 31, no. 11, pp. 1190-1192, Nov. 2010. [PDF]
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