Book & Patent
Patent
[38] Jinseong Heo, Taehwan Moon, Hagyoul Bae, Seunggeol Nam, Sangwook Kim, Kwanghee Lee, “Semiconductor device,” US Patent Application no.
US20230307553A1, Sep. 2023.
[37] Hyunjae Lee, Jinseong Heo, Seunggeol Nam, Taehwan Moon, Hagyoul Bae, "SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC MATERIAL AND
ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE," US Patent Application no. US20230275150A1, Feb. 2023.
[36] Taehwan Moon, Jinseong Heo, Seunggeol Nam, Hagyoul Bae, Hyunjae Lee, "FERROELECTRIC FIELD EFFECT TRANSISTOR, NEURAL NETWORK APPARATUS,
AND ELECTRONIC DEVICE," US Patent Application no. US20230267320A1, Aug. 2023.
[35] Jinseong Heo, Taehwan Moon, Hagyoul Bae, Seunggeol Nam, Sangwook Kim, Kwanghee Lee, "Semiconductor device," US Patent Registration no.
US11699765B2, Jul. 2023.
[34] Taehwan Moon, Jinseong Heo, Seunggeol Nam, Hagyoul Bae, Hyunjae Lee, "Neural network device and electronic system including the same," US Patent
Registration no. US20230186086A1, Jun. 2023.
[33] Hagyoul Bae, Seungyeul Yang, Minhyun Lee, Jinseong Heo, Taehwan Moon, "Vertical non-volatile memory device and electronic apparatus including the same,"
US Patent Registration no. US20230180481A1, Jun. 2023.
[32] Seunggeol Nam, Hagyoul Bae, Jinseong Heo, "Ferroelectric Memory Device And Electronic Device Including The Same," US Patent Registration no.
US20230153592A1, May 2023.
[31] Hagyoul Bae, Dukhyun Choe, Jinseong Heo, Yunseong Lee, Seunggeol Nam, Hyunjae Lee, "Semiconductor device and semiconductor apparatus including the
semiconductor device," US Patent Registration no. US20230155026A1, May 2023.
[30] Jinseong Heo, Hagyoul Bae, Seunggeol Nam, "Hybrid Memory Device And Electronic Device Including Same," US Patent Registration no. US20230157037A1,
May 2023.
[29] Seunggeol Nam, Hagyoul Bae, Jinseong Heo, "Semiconductor element and multiplexer including a plurality of semiconductor elements," US Patent Registration
no. US20230141173A1, May 2023.
[28] Jinseong Heo, Yunseong Lee, Hyangsook Lee, Sanghyun Jo, Seunggeol Nam, Taehwan Moon, Hagyoul Bae, Eunha Lee, Junho Lee, “Electronic device
including ferroelectric thin film structure,” US Patent Registration no. US20230062878A1, Mar. 2023.
[27] Seunggeol Nam, Jinseong Heo, Taehwan Moon, Hagyoul Bae, “Non-volatile content addressable memory device having simple cell configuration and operating
method of the same” US Patent Registration no. US20220351776A1, Nov. 2022.
[26] Jinseong Heo, Taehwan Moon, Hagyoul Bae, Seunggeol Nam, Sangwook Kim, Kwanghee Lee, “Semiconductor device,” US Patent Registration no.
US20220173255A1, Jun. 2022.
[25] Sangwook Kim, Seunggeol Nam, Taehwan Moon, Jinseong Heo, Hagyoul Bae, Yunseong Lee, “Complementary metal oxide semiconductor
device,” US Patent Registration no. US20220173099A1, Jun. 2022.
[24] Seunggeol Nam, Jinseong Heo, Sangwook Kim, Hagyoul Bae, Taehwan Moon, Yunseong Lee, “Semiconductor device,” US Patent Registration no.
US20220140148A1, May. 2022.
[23] Jinseong Heo, Yunseong Lee, Seunggeol Lee, Hagyoul Bae, Taehwan Moon, Sanghyun Jo, “Semiconductor device and semiconductor apparatus including
the same ,” US Patent Registration no. US20220140104A1, May. 2022.
[20~22] Hagyoul Bae (SAIT, Samsung Electronics)
-HZO/IGZO-based 2-terminal memory devices and array architecture
-Multiple channel FET based TCAM application
-Novel structure for reduction of self-heating effect in ferroelectric vertical NAND architecture
[19] Jun-Young Park, Hagyoul Bae, Khwang-Sun Lee, “Recovery method of semiconductor device and appratus thereof,” US Patent Application no. 10-2021-
0124492, Jun 2022.
[18] Hagyoul Bae and SK hynix, “Semiconductor device, and method for manufacturing the same,” US Patent Registration no. US20190378841A1, Dec. 2019.
[17] Hagyoul Bae and SK hynix, “Semiconductor device, and method for manufacturing the same,” Korean Patent Application no. 10-2018-0065827, Jun. 2018.
[16] Yang-Kyu Choi, Hagyoul Bae, Jun-Young Park, “The vertical-type gateless and capacitorless DRAM cell based on germanium and the method for manufacturing
thereof,” European Patent Office (EPO), Registration no. 3428972, Mar. 2020.
(Yang-Kyu Choi, Hagyoul Bae, Jun-Young Park, “The vertical-type gateless and capacitorless DRAM cell based on germanium and the method for manufacturing
thereof,” Koran Patent Application no. 10-2103630-0000, Apr. 2020.)
[15] Yang-Kyu Choi, Hagyoul Bae, Choong Ki Kim, “Method for extracting accurate mobility by using conductive length factor based on effective inversion charges
of metal-oxide-semiconductor field effect transistors and apparatus thereof,” Koran Patent Registration no. 10-1684149-0000 Dec. 2016.
[14] Yang-Kyu Choi, Gun-Beom Lee, Jun-Young Park, Hagyoul Bae, Choong-Ki Kim, “The local annealing method
for curing of gate oxide damage utilizing forward bias current in MOSFET,” Koran Patent Registration no. 10-1838912-0000 (PCT/KR2017/009588), Mar. 2018.
[13] Yang-Kyu Choi, Jun-Young Park, Chang-Hoon Jeon, Hagyoul Bae, Gun-Beom Lee, “Threshold voltage control technique by utilizing potential distribution of the
gate in MOSFET,” Koran Patent Registration no. 10-1835613-0000, Feb. 2018.
[12] Yang-Kyu Choi, Choong-Ki Kim, Hagyoul Bae, Jun-Young Park, “Recovery technology of illumination- and temperature-based damage in transistors for semi-
permanent display operation,” Koran Patent Registration no. 10-1905445-0000, Oct. 2018.
[11] Yang-Kyu Choi, Hagyoul Bae, Daewon Kim, Moon-Seok Kim, “Wearable memory with textile substrate and manufacturing method thereof,” Koran Patent
Registration no. 10-1821861-0000, Jan. 2018.
[10] Yang-Kyu Choi, Hagyoul Bae, Byung-Hyun Lee, Dong-Il Lee, “Rapidly disposable memory with water-soluble substrate for security application,” Koran Patent
Registration no. 10-1823730-0000, Jul. 2018.
[9] Dong Myong Kim, Dae Hawn Kim, Jaeyeop Ahn, Hagyoul Bae, Hyunjun Choi, and Jun Seok Hwang, “Analysis apparatus and method for lateral distribution of
grain boundary by using gate-to-drain and gate-to-source C-V configurations in LTPS TFTs,” Koran Patent Registration no. 10-1531667-0000, Jun. 2015.
[8] Dong Myong Kim, Dae Hawn Kim, Hyunjun Choi, Hagyoul Bae, Jun Seok Hwang, and Jaeyeop Ahn, “Method for extracting intrinsic subgap density of states of
amorphous oxide semiconductor thin-film transistor using channel conduction factor and apparatus thereof,” Koran Patent Registration no. 10-1427-7130000,
Sep. 2013.
[7] Hagyoul Bae, Hyunjun Choi, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting subgap density of states of amorphous oxide semiconductor thin-film
transistor and apparatus thereof,” Korean Patent Registration no. 10-1344-7540000, Mar. 2013.
[6] Jun Seok Hwang, Jaeyeop Ahn, Hyojoon Seo, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting subgap density of states of amorphous
oxide semiconductor thin-film transistor using optical differential ideality factor and apparatus thereof,” Koran Patent Registration no. 10-1368-9720000, Apr.
2013.
[5] Hyunjun Choi, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting intrinsic subgap density of states of amorphous oxide semiconductor
thin-film transistor and apparatus thereof,” Korean Patent Registration no. 10-1344-7520000, Mar. 2013.
[4] Euiyeon Hong, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting subgap density of states of metal oxide semiconductor field effect
transistor using optical differential body factor and apparatus thereof,” Korean Patent Registration no. 10-1375784-0000, Mar. 2013.
[3] Sungwoo Jun, Hagyoul Bae, Euiyeon Hong, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting subgap
density of states of amorphous oxide semiconductor thin-film transistor using frequency-dispersive capacitance-voltage characteristics and apparatus thereof,”
Korean Patent Registration no. 10-1375-7870000, Mar. 2014.
[2] Minkyung Bae, Hagyoul Bae, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting subgap density of states amorphous oxide semiconductor thin-film
transistor and apparatus thereof,” Korean Patent Registration no. 10-2013-0020316, Feb. 2013.
[1] Hagyoul Bae, Inseok Hur, Dae Hwan Kim, and Dong Myong Kim, “Method for extracting parasitic series resistances in amorphous thin film transistors,” Korean
Patent Registration no. 10-2011-0077904, Feb. 2012.
Book
"Gallium Oxide - Chapter: Field-Effect Transistors 4", Hong Zhou, Jinhyun Noh, Hagyoul Bae, Mengwei Si, and Peide D. Ye, Springer, Apr 2020.