Research
▪ Nano-scale device fabrication/characterization (Si-NW FETs, Vertical FETs etc.)
▪ Ferroelectric HZO-based devices
▪ Oxide semiconductor devices (IGZO TFTs, beta-Ga2O3 nano-membrane FETs etc.)
▪ Device simulation by TCAD tool
▪ Neuromorphic synapse and simulation
- 3D ferroelectric logic/memory devices
- Artificial intelligence semiconductor
- H. Bae, IEDM, 2020 & H. Bae, VLSI, 2021
- HZO-based neuromorphic synapse
- ALD-based oxide semiconductor
- H. Bae, IEEE TED, 2021 & H. Bae, Adv. Mater. Tech., 2019
- Logic-in-memory device and circuit
- 3D semiconductor devices
- H. Bae, Nano Lett., 2017
- Reliaiblity analysis of nano-CMOS & a-IGZO TFTs
- H. Bae, IEEE EDL, 2018 etc.
- Wearable sensor system
- Photodetectors
- H. Bae, IEEE IEDM, 2017
- Next-generation 3D memory
- NAND flash & DRAM etc.
- H. Bae, Micromachines, 2021 & SK hynix contest(excellence award)
- Resistive switching memory & memristor devices
- H. Bae, ACS Nano, 2015 & Samsung humanTech (Bronze award)
- TCAD Simulation, 3D semiconductor devices
- Next-generation logic/memory devices
- Fabrication process & modeling
- Best paper, SAIT conference (2021)