Xin Meng

Xin Meng is currently a research assistant in Dr. Kim’s Lab. He joined UTD in 2014 Fall semester as a graduate student under the doctoral program in Electrical Engineering (Current GPA 4.0). His current research interest includes:

(1). GaN High Electron Mobility Transistors (GaN HEMTs) integration with novel thin films via ALD (Al2O3, ZnO, Si3N4, HfZrO2, etc) and electrical characterization. Owing to the high critical electric field of GaN (~3.3 MV/cm) and high electron mobility of 2DEG (~1500 cm2/V·s), GaN HEMTs are very competitive for high power and high frequency RF applications. However, due the intrinsic polarization induced electric field, GaN HEMTs are typically “Normally-On” (Vth<0V). However, for “Fail-Safe” operation, “Normally-Off” (Vth>0V) operation is required. Xin is working on developing/simulating new approaches (polarization, di-pole engineering, etc.) to modulate threshold voltage of GaN HEMTs.

(2). ALD of thin films (Si3N4, AlN, ZnO, Al2O3, HfO2, ZrO2, etc), which have a variety of applications in semiconductor devices as such as high-K gate dielectric, passivation, gate spacers. These films can be deposited uniformly in our lab using Cambridge Nanotech Savannah S100 thermal ALD system, home-made Hollow Cathode plasma enhanced ALD.