- By The Year -
52. Antonio Lucero, TaeHui Cho, Jiyoung Kim, “Characterization of a Novel Radical Nitrogen Plasma Source for Seminconductor Nitridation, Dielectrics for Nanosystem 6, ECS Transaction, Vol. 61, Issue. 2, pp. 151-157 (2014) DOI: 10.1149/06102.0151ecst
51. Jiyoung Kim, HyunChul Kim, Robert. M. Wallace, T. J. Park, “In-situ XPS study on ALD(Atomic Layer Deposition) of high-k dielectrics; La2O3 using La-formidinate and ozone,” ECS Transaction, 45,(3), 95-101 (2012)
50. H. Floresca, D. Hinojos, N. Lu, J. Chan, L. Colombo, R. Wallace, J. Wang, J. Kim, Moon Kim, “Large area mapping of graphene grain structure and orientation,” ECS transaction, 45(4), 79-82 (2012)
49. S. Jandhyala, G. Mordi, B. Lee, J. Kim “In-situ Electrical Studies of Ozone based Atomic Layer Deposition on Graphene,” ECS Transactions, 45(4), 39-48 (2012)
48. S. Jandhyala, G. Mordi, S. Park, and J. Kim, “In-situ Electrical Studies on Atomic Layer Deposition (ALD) of Dielectrics on Graphene”, Pro. of SRC’s 14th Premier Technical Conference (TECHCON), Austin, TX, USA, P063789 (2012)
47. S. Jandhyala, B. Lee, G. Mordi, K. Cho, J. Kim “Ozone Functionalization of Graphene for Atomic Layer Deposition (ALD) of Dielectrics: In-situ Studies”, Extended Abstracts of 42nd IEEE Semiconductor Interface Specialists Conference (SISC) (Arlington, VA) # 9.4 (2011)
46. Mingun Lee, Jie Huang, Antonio Lucero, Moon J. Kim and Jiyoung Kim “Fabrication and Surface Functionalization of Single TiO2 Nanotubes Devices for Bio-Chemical Sensors Applications”, Proceed. Of 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC) (Jeju, Korea) pp. 143-146 (2011)
45. S. Jandhyala, G. Mordi, B. Lee, J. Kim “Atomic Layer Deposited Al2O3 Dielectrics using Ozone Functionalization of Graphene”, Proceed. Of 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC) (Jeju, Korea) pp. 94-97 (2011)
44. S. Jandhyala, B. Lee, G. Mordi, J. Kim, “In-situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene”, SRC’s 13th Premier Technical Conference (TECHCON), Austin, TX, P060443 (2011)
43. Duncan L. MacFarlane, Marc P. Christensen, Louis R. Hunt, Jiyoung Kim, T. W. Kim, LaFave Jr., Ke Liu, Amr El Nagdi, Nahid Sultana, Viswanath Ramakrishna, M. Dabkowski, “Active optical lattice filters with nanophotonic four port couplers,” 2010 15th Optoelectronics and Communications Conference (OECC), pp. 216-217 (2010)
42. M. Christensen, D. MacFarlane, L. Hunt, J. Kim, T. Kim, T. P. LaFave, Liu Ke, A. El Nagdi, N. Sultana, V. Ramakrishna, N. Huntoon, M. Dabkowski, “Active lattice filter with nanophotonic FTIR-Couplers for integrated phontonic channelizer,” Photonics Global Conference (PGC), pp. 1-4 (2010) DOI: 10.1109/ PGC.2010.5705959
41. B. Coss, C. Smith, W. Y. Loh, K. J. Chung, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, “Contact Resistance Reduction to FinFET Source/Drain Using Dielectric Dipole Mitigated Schottky Barrier Height Tuning,” 2010 Tech Digest Int. Electron Devices Meet., 26-3 (2010)
40. G. Mordi, B. Lee, S. Jandhyala, J. Kim, “Ozone based atomic layer deposition of high-k dielectrics for graphene device applications,” Proc. 10th IEEE International Conf. Nanotechnology (IEEE-NANO), p.462-465 (2010)
39. K. J. Chung, T. J. Park, P. Sivasubramani, J. Kim, J. H. Ahn, “Effect of Ozone Concentration on Atomic Layer Deposited HfO2 on Si,” ECS Transactions, 28 (1), pp. 221-226 (2010)
38. Jandhyala, S., Wallace, R. M., Kim, J., “Deuterium diffusion characteristics through single and multi-layer oxides as hydrogen barriers for FeRAM applications”; Publication ID # P056565, Proceedings of TECHCON 2010, Austin, TX, USA (2010)
37. Mordi, G., Jandhyala, S., Lee, B., Kim, J., “Ozone based atomic layer deposition of high-K dielectrics for graphene device applications”; Publication ID # P056574, Proceedings of TECHCON 2010, Austin, TX, USA (2010).
36. D. Cha, S. J. Park, H. Hori, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J. Kim, J. Kim, “A Direct observation on the structural evolution of memory-switching phenomena using in-situ TEM,” Tech. Digest. 2009 Symp. VLSI Technology, pp.204-205` (2009)
35. B. Coss, W. Y. Loh, J. Oh, G. Smith, C. Smith, H. Adhikari, B. Sassman, S. Parthasrathy, J. Barnett, P. Majhi, R. M. Wallace, J. Kim, R. Jammy, “CMOS Band-Edge Schottky Barrier Heights Using Dielectric-Dipole Mitigated (DDM) Metal/Si for Source/Drain Contact Resistance Reduction,” Tech. Digest. 2009 Symp. VLSI Technology, pp. 104-105 (2009)
34. M. Milojevic, A. M. Sonnet, C. L. Hinkle, H. C. Kim, E. M. Vogel, J. Kim, R. M. Wallace, “In-situ studies of atomic layer deposition studies on high mobility materials,” ECS Transactions, 25(4), 115 (2009)
33. B. Lee, G. Mordi, T. Park, L. Goux, Y. J. Chabal, K. Cho, E. M. Vogel, M. J. Kim, L. Colombo, R. M. Wallace, J. Kim, “Atomic-Layer-Deposited Al2O3 as Gate Dielectrics for Graphene-Based Devices,” ECS Transaction, 19(5), pp. 225-230 (2009)
32. G. Lee, C. Gong, A. R. Pirkle, A. Venugopal, B. Lee, S.Y. Park, L. Goux, M. Acik, R. Guzman, Y. J. Chabal, J. Kim, E. M. Vogel, R. M. Wallace, M. J. Kim, L. Colombo, K. Cho, “Materials Science of Graphene for Novel Device Applications,” ECS Transaction, 19(5), pp. 185-199 (2009)
31. C. Hinkle, M. Milojevic, A. Sonnet, H. Kim, J. Kim, E. M. Vogel, R. M. Wallace, “Surface Studies of III-V Materials: Oxidation Control and Device Implications,” ECS Transaction, 19(5), pp. 387-403(2009)
30. C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, K. Choi, J. Kim, R. Wallace, “GaAs MOS frequency dispersion reduction by surface oxide removal and passivation,” IEEE-SISC (Arlington, Virginia, Dec. 6-8) 6-3 (2007)
29. F. Aguirre-Tostado, M. Milojevic, S. McDonnell, K. Choi, J. Kim, R. Wallace, T. Yang, Y. Xuan, D. Zemlynanov, T. Shen, Y. Wu, J. Woodall, P. Ye, “XPS interface study of nano-laminated Al2O3/HfO2 high-k on GaAs,” IEEE-SISC (Arlington, Virginia, Dec. 6-8) P-21 (2007)
28. “C. Bae, S. Kim, H. Shin, J. Kim, “Fabrication of nanoscale tubular structures and capsules of oxides by ALD,” ECS Trans. 11 (7) (Washington DC, Oct. 7 -12), pp.149-164 (2007)
27. Jiyoung Kim, Dongkyu Cha, K.J. Choi, Moon J. Kim,“In-situ TEM observation on nanostructure evolution during electrical stressing,” Proceeding of 8th IEEE Nonvolatile Memory Technology Symposium, (Albuquerque, New Mexico, Nov. 10-13) pp.78-81 (2007)
26. Amar Chowdhury, S. Courtney, R. M. Wallace, Jiyoung Kim, “Hydrogen diffusion through barrier layers,” Proceeding of 8th IEEE Nonvolatile Memory Technology Symposium (Albuquerque, New Mexico, Nov. 10-13) pp. 48-51 (2007)
25. Y. Tan, C. Young, D. Heh, C. Park, P. Sivasubramani, J. Huang, D. Gilmer, K. Choi, J. Kim, M. Kim, P. Majhi, R. Choi, P. Kirsch, B. Lee, H. Tseng, R. Jammy, “Improved flash memory program and erase window with TiO2 charge trap layer and high temperature dopant anneal,” 4th IEEE-IAGST, Sep.25-28, Dallas/TX, (2007)
24. P Sivasubramani, T. Boscke, J. Huang, C. Young, P. Kirsch, S. Krishnan, M. Quevedo-Lopez, S. Govindarajan, B. Ju, H. Harris, D. Lichtenwalner, J. Jur, A. Kingon, J. Kim, B. Gnade, R. Wallace, G. Bersukar, B. Lee, R. Jammy, “Dipole moment model explaning nFET Vt tuning utilizing La, Sc, Er and Sr doped HfSiON dielectrics,” 2007 Symp. VLSI Tech. Dig. Tech., pp.68-69 (2007)
23. Dongkyu Cha, Bongki Lee, Moon J. Kim, Jiyoung Kim, Sanghee Won, HyunJung Shin, Jaegab Lee, Myung Mo Sung, “Fabrication and characteristics of TiO2 nanotubes using atomic layer chemical vapor deposition,” ECS Trans. 3 (15), pp.227-232 (2007)
22. M. Kim, T. Lee, J.Kim, R.Wallace, B. Gnade, “Si-Based Resonant Tunneling Devices Using UHV wafer Bonding,” ECS Trans. 3 (6), p. 75 (2006)
21. P. Zhao, J.Kim, M.J.Kim, B.E.Gnade and R.M.Wallace, “Thermally Stable MoxSiyNz as a Metal gate Electrode for Advanced CMOS Devices,” in Characterization and Metrology for ULSI Technology, AIP Conference Proceedings 788 (2005) 152.
20. P. Zhao, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace, “MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS,” Extended Abstracts of the International Conference on Solid State Devices and Materials, Kobe, Japan, A-8-1, pp 848-849 (2005)
19. I. Jeon, J. Lee, P. Zhao, P. Sivasurbramani, T. Oh, H. Kim, D. Cha, J. Huang, M. Kim, B. Gnade, J. Kim and R. Wallace, “A novel methodology of tunning work function of metal gate using stacking bi-metallic layers,” 2004 IEEE International Electron Devices Meeting (IEDM) Technical Digest, San Francisco, CA:, 300-306 (2004, 12)
18. Juwhan Park, Daekyun-Jeong, Nohheon-Park and Jiyoung Kim, "Microstructure and Electrical Properties of ZrO2 Films Deposited by MO-ALD", 2003 AVS Topical conference on Atomic Layer Deposition, pp. 42-43 (2003, 3)
17. Daekyun Jeong, Juwhan Park, Nohheon Park, Hyunjung Shin, JaeGab Lee, Myung-Mo Sung, Jiyoung Kim, "Fabrication of Cu/ZrO2/Si Structure Capacitors by a Novel Selective Deposition Technique on Patterned Self-Assembled Monolayers (SAMs)”, 2003 AVS Topical conference on Atomic Layer Deposition, pp 225-226, San Jose, CA, USA (2003, 3.)
16. J.M. Koo, S.K. Hong, S.J. Yeom, J.S. Roh, and J. Kim, "High Thermal Stability of Poly-Si Node CrTiN/TiN Double Barrier Layers for High Density Ferroelectric Memory Application" IEDM 2001 Tech. Digest. pp. 279-282, Washington DC , USA (2001. 12)
15. June-Mo Koo, TaeHo Kim and Jiyoung Kim, "Hydrogen Induced Degradation Phenomena of PZT Ferroelectric Capacitors", Proceedings of the 2000 12th IEEE International; Symposium on Applications of Ferroelectrics (Honolulu, Hawaii, July21-Aug.2, 2000), pp. 591-594 (2001, 3)
14. Sungwon Jung, Jae Gab Lee, Jiyoung Kim, "Ir Electrodes for Ferroelectric Capacitors", MRS Symp. Proc., Vol. 493, pp.201-206 (1998.4)
13. Jiyoung Kim, Bo Jiang, R. Khamankar, J. Lee, "Effects of Microstructure on the Electrical Characteristics of Sol-Gel derived PZT Thin Films", MRS Symp. Proc., Vol. 361, pp.409-415 (1995)
12. R. Khamankar, Jiyoung Kim, Bo Jiang, Jack Lee, "Effects ac Stress on Charge and Voltage Decay Rates of PZT Thin Film Capacitors for DRAM Applications", MRS Symp. Proc., Vol. 361, pp.263-268 (1995)
11. Robert Jones, Papu Maniar, J. Dupuie, Jiyoung Kim, "Impact of a Ti Adhesion Layer on Pt/PZT/Pt Capacitors", MRS Symp. Proc., Vol. 361, pp.223-228 (1995)
10. Bo Jiang, Jiyoung Kim, R. Khamankar, I. Lee, Jack Lee, "Electron-beam Irradiation of High Dielectric Constant PLZT Thin Film Capacitors", MRS Symp. Proc., Vol. 361, pp.85-90 (1995)
9. R. Khamankar, Jiyoung Kim, B. Jiang, J. Lee, P. Maniar, R. Jones, "Impact of Process Damages on Performance of High Dielectric Constant PLZT Capacitor for ULSI DRAM Applicators", 1994 IEDM Tech. Digest., pp.337-340 (1994)
8. Jiyoung Kim, C. Sudhama, R. Khamankar, B.Jiang, J. Lee, R. Jones, "La Doped PZT Thin Films for Gigabit DRAM Technology", 1994 VLSI Tech. Symp. Tech. Digest., pp.151-152 (1994)
7. C. Sudhama, R. Khamankar, Jiyoung Kim, J. Lee, "Novel Methods for the Reliability Testing of Ferroelectric DRAM Storage Capacitors", 32nd Annual IEEE Inter. Reliability Phys. Proc., pp.238-242 (1994)
6. Jiyoung Kim, C. Sudhama, R. Khamankar, J. Lee, "Ultrathin(65nm) Sputtered PZT Films for ULSI DRAM Applications", MRS Symp. Proc., Vol. 310, pp.473-478 (1993)
5. Jack Lee, C. Sudhama, Jiyoung Kim, R. Khamankar, "High Dielectric Constant Ferroelectric Thin Films for DRAM Applications", Extended Abst. Inter. Conf. SSDM, pp.850-853 (1993)
4. Jiyoung Kim, V. Chikarmane, C. Sudhama, J. Lee, "The Impact of Device Asymmetry on the Electrical and Reliability Properties of Ferroelectric PZT for Memory Applications", MRS Symp. Proc., Vol.265, pp.313-318 (1992)
3. C. Sudhama, Jiyoung Kim, Vinay Chikarmane, Jack Lee, "Polarity and Area dependence of Reliability Characteristics of Sputtered and Sol-Gel Derived Thin PLZT Films for DRAM Applications", MRS Symp. Proc., Vol.243, pp.147-152 (1992)
2. V. Chikarmane, C. Sudhama, Jiyoung Kim, Jack Lee, "The role of the Pt-PZT interface in the Anomalous Phase Transformation and Device Degradation in Sputtered Thin Film Capacitors at sub-200nm Thickness", MRS Symp. Proc., Vol.243, pp.367-370 (1992)
1. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, A. Tasch, "The effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Film Capacitors", MRS Symp. Proc., Vol.230, pp.297-302 (1992)