Jiyoung Kim's Research Group

- List of Lab Main Tools -

IN-SITU CLUSTER TOOL

CVD/ALD equipped with loadlock
Meaglow hollow cathode plasma source
4 inch capability
Base pressure : ~10-9 Torr
Working pressure : 1 to 10 Torr (lower or higher with modifications)
Substrate heater : 400C max
“Subchamber” design to minimize process volume
Residual gas analyzer to check vacuum health
In-situ measurement and analysis are available without breaking vacuum

ROCKY MOUNTAIN ICP PLASMA ALCVD (HT-ALD)

ICP Plasma source
4 inch capability
Base pressure : ~10-3 Torr
Working pressure : 50m Torr to 1 Torr
Substrate heater : 650C max
Nitride deposition using hydrazine

NCD LUCIDA G100 RTCVD

Rapid thermal process CVD/ALD
6 inch wafer capability
Lamp heater capable of process up to 1050C
Multi-temperature recipes possible with ramp up/down rate control
High vacuum base pressure: less than 10-7 Torr
Working pressure: ~100 mTorr
2 process gas lines (configurable for NH3, H2, O2, O3, CH4, etc)
1 precursor line

NCD LUCIDA D100 MALD

Molecular/atomic layer deposition
4 inch wafer capability
Organic molecule precursor capability in addition to traditional inorganic ALD films
Substrate heater: 250C max
Base pressure: 100 mTorr
Working pressure: ~380 mTorr
4 precursor lines and one process gas line

Home made pe-ald

4 inch wafer capability
HCP plasma source (13.56 MHz)
Substrate heater: 300C max
Base pressure: 10-3 Torr
Working pressure: 500m Torr
4 precursor lines and one process gas line

cambridge ct 100

12 inch wafer capability
Substrate heater: 300C max
Base pressure: 10-2 Torr
Working pressure: ~10-1 Torr
4 precursor lines and one process gas line
Stop-valve process capability

ultratech/cambridge savannah s100

4 inch wafer capability
Laminar flow design
Substrate heater: 325C max
Base pressure: 200 mTorr
Working pressure: 200 mTorr ~ 3 Torr
4 precursor manifold lines with selectable ozone/water/hydrogen peroxide oxidant line
Flexible control software enabling customizable process flow

graphene square CVD furnace

Substrate heater: ~2000C max
Base pressure: 200 mTorr
Working pressure: 200 mTorr ~ 1 Torr
6 process gas lines including Ar, CH4, H2, H2S, H2Se, and SP
CVD System for 2D material deposition

internal photoemission spectroscopy (IPE) system

IPE system equipped with Xe arc lamp capable of light output from UV (~200 nm) to IR (~2500 nm)
Equipped with current amplifier and lock-in amplifier for photocurrent detection < 1pA
Capability to study buried interfaces, including interrogation of interface barriers and band alignment in heterostructure materials

probe station (cryogenic, keithley 4200-scs)

Cryogenic

Temperature range from 77K (LN2) to 400K
Measurement system equipped with 5 probes
Measurement vacuum : ~ 10-6 Torr
Availability to measure temperature dependent properties of devices and thin films including transport mechanisms

Keithley 4200-SCS

Keithley probe station equipped with SMU, PMU unit for device electrical characterization

Reflection Absorption Infra-Red Spectroscopy (RAIRS)

In-situ FTIR equipped with thermal ALD chamber
Substrate heater: 500C max
Base pressure: 200 mTorr
Maximum pressure: ~ 10 Torr
2 precursor manifold lines with selectable ozone/water/hydrogen peroxide oxidant line

Transmission ftir

FTIR equipped with electron gun (~1000 eV)
FTIR equipped with residual analyzer
Base pressure : 10-9 Torr
Sample heating capability up to 250C

Combined Raman/AFM

Renishaw Raman system coupled to an NTMDT atomic force microscope
- Combined AFM/Raman allows simultaneous Raman scanning of AFM area
- Tip enhanced Raman possible
- Can run as stand alone Raman or AFM
Raman has mapping capabilities with ~500 nm spatial resolution
- Selectable 532/441 nm laser wavelength
Temperature cell allows in-situ heating/cooling of sample during Raman (77K-500C)

Ozone Generator

TMEIC ozone generator
Can supply nitrogen free ozone from UHP oxygen
- Unique capability in industry
Concentration as high as 400 g/m3 possible

Environmental Consciousness

Hazardous gases from ALD process are neutralized by an Ecosys CDO “burnbox”
Non-combustible gases are removed by building mounted exhaust scrubbers

in-situ xps cluster (shared facilities, dr.wallace)

Equipped with six UHV chambers interconnected by UHV transfer backbone and two load locks
Base pressure : ~10-10 Torr
Working pressure (ALD/MLD module) : 1 to 10 Torr (lower or higher with modifications)
Substrate heater : 400C max
In-situ XPS measurement is available without breaking vacuum

Characterization (shared Facilities)

The Cleanroom Tools (Common Users Facilities)

The University of Texas at Dallas (UTD) Cleanroom Research Laboratory is a facility with filtered, vertical laminar flow air, equipped with versatile semiconductor process research equipment assembled for the purpose of supporting university research in the fields of microelectronics, electronic materials, nanotechnology, MEMS, lithography, optics, and other areas requiring a particle-free environment.

The Cleanroom Research Laboratory is a cross-disciplinary center. It is physically located at the “Natural Science & Engineering Research Laboratories” building, or NSERL. A university-wide advisory committee, composed of members from diverse fields, provides the associate director of the facility with information on the needs and desires associated with faculty research.The Cleanroom Research Laboratory at UT Dallas offers an excellent location for various technical organizations and companies to carryout research activities. The Laboratory includes facilities for device fabrication and characterization with a range of equipment, such as plasma etch, PECVD, LPCVD, Metallization (sputter, e-gun, thermal evap), wet chemical stations, thermal (oxidation/diffusion, RTP) Lithography, and surface analysis tools.