Development of in-situ electrical/materials characterization tool
in-situ characterization for an effective doping method of oxide and 2D materials for 3D structure applications
in-situ reflection absorption infra-red spectroscopy (RAIRS) for ALD cycle characterization
Su Min Hwang et al 2019 ECS Trans. 92 265, DOI 10.1149/09202.0265ecst
© 2019 ECS - The Electrochemical Society
Advanced Materials
Novel boron nitride (BN) and tungsten nitride (WN) by PE-ALD
Organic-Inorganic Hybrid thin film for EUV resist
Novel high purity anhydrous hydrazine (N2H2) applications
Novel precursor evaluation for ALD SiN
PECVD growth of Graphite
Jaebeom Lee, ACS Appl. Mater. Interfaces 2020, 12, 32, 36688–36694, https://doi.org/10.1021/acsami.0c07548
Copyright © 2020 American Chemical Society
Su Min Hwang et al ACS Appl. Nano Mater. 2021, 4, 3, 2558–2564, https://doi.org/10.1021/acsanm.0c03203
Copyright © 2021 American Chemical Society
Advanced Devices and Applications
Sub 5 nm CMOS technology
Hf based fluorite ferroelectric thin films for low voltage operation applications
Carbon doped transition metal oxide for ReRAM
Induim nitride (InN) deposited by PE-ALD for alternative novel channel
Memory Driven Logics and Neuromophic computing
Power/RF Devices
Sensor/Energy Devices
Flexible Devices
Minjong Lee et al 2024 IEEE Symposium on VLSI Technology and Circuits, Honolulu, HI, USA, 2024, pp. 1-2, DOI: 10.1109/VLSITechnologyandCir46783.2024.10631444
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Atomic Precise Process
Effective Atomic Layer Doping effect on 2D MoS2
Atomic Layer Anneal
Selective Atomic Layer Deposition, and Atomic Layer Etching
Low temperature HAR SiN-SiO2 ALD
Epitaxial ALD
2D & Novel Materials ALCVD