RESEARCH

J. Kim Lab Research Overview

Advanced thin film deposition

• Novel precursor evaluation for ALD SiN
• Novel high purity anhydrous hydrazine (N2H2) applications
• Molecular-atomic layer deposition (MALD) of hybrid films

Advanced Memory and Logic Devices, Materials and Process Integration

• Hf based fluorite based ferroelectrics thin films for FeRAM, steep-slope switch, FeFETs, NV memory and DRAM applications
• Steep-slope threshold selector materials, process and devices
• Novel Logic-in-Memory (LiM) and 3D Integration
• Neuromophic and quantum computing

2D Materials – Synthesis, Characterization, Dielectric Engineering

• PECVD growth of Graphite
• ALD deposition of hexagonal boron nitride
• Graphene/Graphite for device applications

III-V Devices – Interface Engineering, Device Fabrication, Characterization

• III-N power devices
• Interface passivation and characterization of III-Vs

Development of in-situ electrical/materials characterization tool