JOURNAL

262. Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Jin-Hyun Kim, Takashi Onaya, Akshay Sahota, Su Min Hwang, Dan N. Le, Jiyoung Kim, Si Joon Kim, “Relaxation induced by imprint phenomena in low temperature (400 C) processed HZO-based Metal-Ferroelectric-Metal capacitors,” ACS-Appl. Electron. Mater. (2022) (published on-line) https://doi.org/10.1021/acsaelm.1c01241

261. Su Min Hwang, Harrison Sejoon Kim, Dan Le, Akshay Sahota, Jaebeom Lee, Yong Chan Jung, Sang Woo Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Byung Keun Hwang, Lance Lee, Xiabing Zhou, Jiyoung Kim, “High wet etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane,” Jour. Vac. Sci. Tech. A (2022) (Published on-line) https://doi.org/10.1116/6.0001519

260. Akshay Sahota, Harrison S. Kim, Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Dan N. Le, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Jiyoung Kim, “Highly Reliable Selection Behavior with Controlled Ag Doping of Nano-polycrystalline ZnO Layer for 3D X-Point Framework,” Electron. Dev. Lett. 43(1) 21-24 (2022) https://doi.org/10.1109/LED.2021.3130828 (Published online: Nov. 25. 2021)

2021

259. Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin-Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim,”Low-thermal-budget (300 C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing,” Appl. Phys. Lett. 119, 242901 (2021) https://doi.org/10.1063/5.0075466

258. Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Dan N. Le, Yong Chan Jung, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Heber Hernandez-Arriaga, Jiyoung Kim, “Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors,” AIP Advances 11, 115213 (2021) https://doi.org/10.1063/5.0066311 (Published online: Nov. 5. 2021)

257. Arup Polley, Arul V. Ravichandran, Varum Kumar, Archana Venugopal, Lanxia Cheng, Antonio Lucero, Jiyoung Kim, Luigi Colombo, Robert R. Doering, “Ambipolar gate modulation technique for the reduction of offset and flicker noise in graphene Hall-effect sensor,” IEEE Trans. Sensors. 21(22) 25675-25686 (Nov. 15, 2021) https://doi.org/10.1109/JSEN.2021.3115996

256. Hwang, Jeongwoon; Kim, Jongchan; Nie, Yifan; Lee, Byoung Hun; Ahn, Jinho; Kim, Jiyoung; Sung, MyungMo; Cho, Kyeongjae, “A new route of synthesizing atomically thin 2D Materials embedded in bulk oxide,” Jour. Appl. Phys. 130(3), 035302, (2021) https://doi.org/10.1063/5.0055054

255. Yong Chan Jung, Jaidah Mohan, Su Min Hwang, Jin Hyun Kim, Dan N. Le, Akshay Sahota, Namhoon Kim, Heber Hernandez-Arriaga, Rino Choi, Si Joon Kim, Jiyoung Kim, “A novel combinatorial approach to the ferroelectric properties in HfxZr1-xO2 deposited by atomic layer deposition,”- Invited paper, Physic Status Solidus – Rapid Research Letter, 15, 2100053 (2021) First published: 01 April 2021 https://doi.org/10.1002/pssr.202100053

254. Hyo Jeong Kim, Yonghwan An, Yong Chan Jung, Jaidah Mohan, Jeong Gyu Yoo, Young In Kim, Heber Hernandez-Arriaga, Harrison Sejoon Kim, Jiyoung Kim, Si Joon Kim, “A review on low-thermal budget fluorite-structure ferroelectrics for future electronic device applications,” Invited paper, Physica Status Solidus – Rapid Research Letter, 15 (5), 2100028 (2021) https://doi.org/10.1002/pssr.202100028

253. Jin-Hyun Kim, Jinhyun Kim, Hyungmin Ji, Manhxcuong Nguyen, An Hoangthuy Nguyen, Sangwoo Kim, Jiyoung Kim, Rino Choi, “Low-Temperature Dopant Activation using Nanosecond UV laser annealing for monolithic 3D integration,” Thin Solid Films, 735, 138864 (2021) Selected as a cover article https://doi.org/10.1016/j.tsf.2021.138864

252. Takashi Onaya, Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriage, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura, “Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron X-ray analysis,” APL Materials, 9, 031111(2021) https://doi.org/10.1063/5.0035848

251. Harrison Sejoon Kim, Akshay Sahota, Jaidah Mohan, Antonio T. Lucero, Yong Chan Jung, Minji Kim, Jang-Sik Lee, Rino Choi, Si Joon Kim, Jiyoung Kim, “Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by a Facile Electrochemical Deposition for X-point Selector,” ACS-Appl. Electron. Mater. 3(5) 2309 (2021) Cover Article, http://dx.doi.org/10.1021/acsaelm.1c00197

250. Su Min Hwang, Harrison Kim, Dan Le, Arul Vigneswar Ravichandran, Akshay Sahota, Jaebeom Lee, YongChan Jung, Si Joon Kim, Jinho Ahn, Byung Keun Hwang, Lance Lee, Xiabing Zhou, Jiyoung Kim, “Plasma-enhanced atomic layer deposition of nanometer-thick SiNx thin films using chlorodisilane for etch-resistant coatings,” ACS-Appl. Nano. Materials, 4(3) 2558 (2021) https://dx.doi.org/10.1021/acsanm.0c03203

249. Jaidah Mohan, Heber Hernandez-Arriaga, Yong Chan Jung, Takashi Onaya, Chang-Yong Nam, Esther H. R. Tsai, Si Joon Kim and Jiyoung Kim, “Ferroelectric dipole relaxation with scaling of Hf_0.5Zr_0.5O₂ on silicon,” Appl. Phys. Lett. (invited paper), 118, 102903 (2021) https://doi.org/10.1063/5.0035579

2020

248. Takashi Onaya, Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, Atsushi Ogura, “Role of ZrO₂ layer on ferroelectricity of thicker ferroelectric Hf_xZr₁-_xO₂ bilayer over 20nm,” Appl. Phys. Lett. 117, 232902 (2020) https://doi.org/10.1063/5.0029709 (Published online: Dec. 09,2020)

247. Yong Chan Jung, SuMin Hwang, Dan N. Le, Asyun Kim, Antonio T. Lucero, Arul Ravinchandran, Harrison Sejoon Kim, Si Joon Kim, Rino Choi, Jinho Ahn, Daniel Alvarez, Jeff Spiegelman, Jiyoung Kim, “Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as a nitridation Agent” Materials, 13. 3387 (2020) https://doi.org/10.3390/ma13153387

246. Jeon, Hyeok; Kim, Seung-Geun; Park, June; Kim, Seung-Hwan; Kim, Jiyoung; Yu, Hyun-Yong "Hysteresis modulation on Van der Waals-based ferroelectric field-effect transistor by interfacial passivation technique and its application in optic neural networks" Small, 16, 2004371 (2020) https://doi.org/10.1002/smll.202004371

245. Harrison S. Kim, Su Min Hwang, Xin Meng, YoungChul Byun, Arul V. Ravichandran, Akshay Sahota, Si Joon Kim, Jinho Ahn, Lance Lee, Xiaobing Zhou, Byung K. Hwang, Jiyoung Kim, “High Growth Rate and High Wet Etch Resistance Silicon Nitride Grown by Low Temperature Plasma Enhanced Atomic Layer Deposition with a Novel Silyamine Precursor,” Jour. Material. Chem. C, 8(37), pp. 13033-13039 (2020) https://doi.org/10.1039/D0TC02866E

244. Si Joon Kim, Jaidah Mohan, Harrison Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Kihyun Kim, Chadwin Young, Rino Choi, Jinho Ahn, Jiyoung Kim, “A comprehensive study on the effect of TiN top and bottom electrodes on atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films,” Materials, 13, 2968 (2020) https://doi.org/10.3390/ma13132968 - Selected as Featured.

- Top Downloaded Paper (July-October 2020).

243. Jaebeom Lee, Arul V. Ravichandran, Lanxia Cheng, Antonio T Lucero, Hui Zhu, Zifan Che, Massimo Catalano, Moon J. Kim, Robert M. Wallace, Archana Venugopal, Woong Choi, Luigi Colombo, Jiyoung Kim, “Atomic Layer Deposition fo Layered Boron nitride for Large-Area 2D Electronics,” ACS-Applied Materials and Interfaces, 12 (32) pp.36688-36694 (2020) https://doi.org/10.1021/acsami.0c0754

2019

242. Su Min Hwang, Zhiyang Qin, Harrison Sejoon Kim, Arul Ravichandran, Yong Chan Jung, Si Joon, Kim, Byung Keun Hwang, Jiyoung Kim, “Ozone Based High Temperature Atomic Layer Deposition of SiO₂ Thin Films,” Japanese Journal of Applied Physics, 59, SIIG05 (2020) https://doi.org/10.35848/1347-4065/ab78e4

241. Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Jaebeom Lee, Su Min Hwang, Dushayant Narayan, Jae-Gil Lee, Chadwin D. Young, Luigi Colombo, Gary Goodman, Alan S. Wan, Pil-Ryung Cha, Scott R. Summerfelt, Tamer San, Jiyoung Kim, “Effect of hydrogen derived from oxyen sources on -low-temperature ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors, Appl. Phys. Lett. 115(18) 182901 (2019) Editor’s Pick https://doi.org/10.1063/1.5126144

240. Nikhil Tiwale, Ashwanth Subramanian, Kim Kisslinger, Ming Lu, Jiyoung Kim, Aaron Stein, Chang-Yong Nam, “Advancing the next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists” Jour. Mater. Chem. C, 7, pp.8803-8812 (2019) https://doi.org/10.1039/C9TC02974E

239. Jiabao Zheng, Benjamin Lienhard, Gregory Doerk, Mircea Cotlet, Harrison S. Kim, Young-Chol Byun, Chang-Yong Nam, Jiyoung Kim, Charles T. Black, Dirk Englund, “Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks,” Sci. Rep. 9, 6914 (2019) https://doi.org/10.1038/s41598-43304-5

238. Seung-Geun Kim, Seung-Hwan Kim, June Park, Gwang-Sik Kim, Jae-Hyeon park, Krishna Sarswat, Jiyoung Kim, Hyun-Yong Yu, Infra-red Detectable MoS2 Photo-Transistor and Its Application to Artificial Multi-Level Optic-Neural Synapes, ACS Nano 13(9) pp. 10294-10300 (2019) https://doi.org/10.1021/acsnano.9b03683

237. Christopher Smyth, Lee Walsh, Pavel Bolshakov, Massimo Catalano, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J. Kim, Chadwin Young, Christopher Hinkle, Robert Wallace, “Engineering the Pd–WSe₂ Interface Chemistry for FETs with High Performance Hole Contacts”, ACS Appl. Nano Mater. 2(1) pp. 75-88 (2019) https://doi.org/10.1021/acsanm.8b01708

236. Christopher M. Smyth, Lee A. Walsh, Pavel Bolshakov, Massimo Catalano, Michael Schmidt, Brendan Sheehan, Rafik Addou, Luhua Eang, Jiyoung Kim, Moon J. Kim, Chadwin D. Young, Christopher L. Hinkle, Robert M. Wallace, “Engineering the Interface Chemistry for Scandium Electron Contacts in WSe₂ Transistor and Diodes,” 2D Materials, 6(4), 045020 (2019) https://doi.org/10.1088/2053-1583/ab2c44

235. Harrison Kim, Joy Lee, Si Joon Kim, Jaebeom Lee, Antonio T. Lucero, Myung Mo Sung, Jiyoung Kim, “Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition; a Case Study of Zinc Oxide,” ACS Combinatorial Science, 21 (6), pp. 445-455 (2019) https://doi.org/10.1021/acscombsci.9b00007

234. Sara Pouladi, Mojtaba Asadirad, Seung Kyu Oh, Jie Chen, Weijie Wang, Cuong-Nguyen Manh, Rino Choi, Jiyoung Kim, Devendra Khatiwada, Monika Rathi, Pavel Dutta, Venkat Selvamanickam, Jaehyun Ryou, “Effects of grain boundaries on conversion effieciences of single-crystal-like GaAs thin-film solar cells on flexible metal tapes”, Solar Energy Materials and Solar Cells (SOLMAT), 199, pp.122-128 (2019) https://doi.org/10.1016/j.solmat.2019.04.032

233. Ava Khosravi, Rafik Addou, Massimo Catalano, Jiyoung Kim, Robert M. Wallace, “High-k Dielectric on ReS₂: In-situ Thermal vs Plasma-Enhanced Atomic Layer Deposition of Al₂O₃, Materials, 12, 1056 (2019) doi: 10.3390/ma12071056

232. Lynn Lee, Jeongwoon Hwang, Jin Won Jung, Ho-In Lee, Sunwoo Heo, Minho Yoon, Sungju Choi, Jeongchan Kim, Nguyen van Long, Jinseon Park, Jae Won Jeong, Jiyoung Kim, Kyung Rok Kim, Dae Hwan Kim, Seongil Im, Byoung Hun Lee, Kyeongjae Cho, Myung Mo Sung, “ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors,” Nature Communications 10:1988 (2019) https://doi.org/10.1038/s41467-019-09998-x

231. Seung-Hwan Kim, Kyu Hyun Han, Gwang-Sik Kim, Seung=Geun Kim, Jiyoung Kim, Hyun-Yong Yu, “Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure”, ACS Appl. Mater. Interface. 11(6), pp. 6230-6237 (2019) DOI: 10.1021/acsami.8b18860

230. Si Joon Kim, Jaidah Mohan, Jaebeom Lee, Joy S. Lee, Antonio T. Lucero, Chadwin D. Young, Scott R. Summerfelt, Tamer San, Jiyoung Kim, ““Stress-Induced Crystallization of Thin Hf0.5Zr0.5O2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications”, ACS-Appl. Mater. Interface. 11(5), pp. 5208-5214 (2019) (Published: Jan. 17. 2019) DOI: 10.1021/acsami.8b17211

229. Si Joon Kim, Jaidah Mohan, Scott R. Summerfelt, Jiyoung Kim, “Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advances”, JOM (invited review paper) 71 (1), pp.246-255 (2019) DOI: 10.1007/s11837-018-3140-5

2018

228. Hyun Soo Kim, Dae Hyun Kim, Seong Keun Kim, Robert M. Wallace, Jiyoung Kim, Tae Joo Park, “Strategic selectrion of oxygen source for low temperature-atomic layer deposition of Al2O3 thin Films,” Adv. Electron. Mater. 1800680 (2018) https://doi.org/10.1002/aelm.201800680

227. Harrison S. Kim, Xin Meng, Antonio T. Lucero, Lanxia Cheng, Si Joon Kim, Young-Chul Byun, Joy S. Lee, Su Min Hwang, Robert M. Wallace, Michael Telgenhoff, Byung Keun Kwang, “Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Ech Stopper and Gate Spacer: Correlation Between Film Properties and Wet Etch Rate,” ACS-Appl. Mater. Interface. 10(51), pp. 44825- 44833 (2018) (DOI: 10.1021/ acsami.8b15291, Dec.26.2018)

226. Si Joon Kim, Jaidah Mohan, Harrison S. Kim, Jaebeom Lee, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim, “Low-volatage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors,” Appl. Phys. Lett. 113, 182903 (2018) https://doi.org/10.1063/1.5052012 (Selected as a Featured Article)

225. Yuzhi Gao, Mathilde Iachella, Eric Mattson, Antonio T. Lucero, Jiyoung Kim, Mehdi Djafari Rouhani, Yves Chabal, Carole Rossi, Alain Exteve, “Al Intercalation with ZnO Surfaces,” J. Phys. Chem. C, 122 (31), pp. 17856-17864 (2018) (Published: Aug. 9, 2018) DOI: 10.1021/acs.jpcc.8b04952

224. Hyejoo Lee, Jongtae Ahn, Seongil Im, Jiyoung Kim, Woong Choi, “High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time,” Sci. Rep. 8: 11545 (2018) Published Aug. 1. 2018 DOI:10.1038/s41598-018-29942-1

223. Si Joon Kim, Jaidah Mohan, Jaebeom Lee, Joy S. Lee, Chadwin D. Young, Luigi Colombo, Scott R. Summerfelt, Tamer San, Jiyoung Kim, “Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400C) Hf_0.5Zr_0.5O₂ films,” Appl. Phys. Lett, 112, 172902 (2018) https://doi.org/10.1063/1.5026715 (Selected as Editor’s Pick)

222. Daekyun Jeong, Rahim Abdur, Young-Chang Joo, Jae-il Jang, Pil Ryung Cha, Jiyoung Kim, Kyeong-Sik Min, Jaegab Lee, “Effects of Interfacial layer-by-layer nanolayers on the stability of the Cu TSV: Diffusion barrier, adhesion, conformal coating, and mechanical properties,” Mater. Sci. in Semiconductor Processing, 83, pp. 33-41 (2018) https://doi.org/10.1016/j.mssp.2018.04.008 Available on line 13 April 2018

221. Lee A. Walsh, Avery J. Green, Rafik Addou, Westly Nolting, Christopher R. Cormier, Adam T. Barton, Tyler R. Mowll, Ruoyu Yue, Ning Lu, Jiyoung Kim, Moon J. Kim, Vincent P. LaBella, Carl A. Ventrice, Jr., Stephen McDonnell, William G. Vandenberghe, Robert M. Wallace, Alain Diebold, and Christopher L. Hinkle, “Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3, ACS Nano, 12 pp. 6310-6318 (2018) Published: June 6, 2018 DOI: 10.1021/acsnano.8b03414

220. Guanyu Zhou, Rafik Addou, Qingxiao Wang, Shahin Honari, Christopher R. Cormier, Lanxia Cheng, Ruoyu Yue, Christopher M. Smyth, Akash Laturia, Jiyoung Kim, William G. Vandenberghe, Moon J. Kim, Robert M. Wallace, and Christopher L. Hinkle, "High-Mobility Helical Tellurium Field Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth" Advanced Materials, 1803019 (2018) DOI:10.1002/adma.201803109 (Communication, No. adma.201803109R2)

219. Seung-Hwan Kim, Gwang-Sik Kim, June Park, Changmin Lee, Hyungsub Kim, Jiyoung Kim, Joon Hyung Shim, Hyun-Yong Yu, “Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultra-Low Contact Resistance Achievement,” ACS Appl. Mater. Interface. 10(31), pp. 26378-pp.26386 (2018) DOI: 10.1021/acsami.8b07066

218. Gwang-Sik Kim, Seung-Hwan Kim, June Park, Kyu Hyun Han, Jiyoung Kim, Hyun-Yong Yu, “Schottky Barrier Height Engineering for Electrical Top Contacts of Multi-Layered MoS₂ FETs with Reduction of Metal-Induced Gap States,” ACS Nano, 12, pp.6292-6300 (2018) Published May 31, 2018 DOI: 10.1021/acsnano.8b03331

217. Md Abdul Kuddus Sheikh, Rahim Abdur, Son Singh, Jae-Hun Kim, Kyeong-Sik Min, Jiyoung Kim, Jaegab Lee, “Effects of Chlorine Contents on Perovskite Solar Cell Structure Formed on CdS Electron Transport Layer Probed by Rutherford Backscattering,” Electron Materials Letters, 14(6) pp. 1-12 (2018) DOI:10.1007/s13391-018-0084-4

216. Jeongwoon Hwang, Young Jun Oh, Jiyoung Kim, Myung Mo Sung, Keongjae Cho, “Atomically thin transition metal layers: Atomic layer stabilization and metal semiconductor transition,” J. Appl. Phys. 123, 154301 (2018) https://doi.org/10.1063/1.5024200

215. Meng, X.; Kim, H. S.; Lucero, A. T.; Hwang, S.; Lee, J. S.; Byun, Y.-C.; Kim, J.; Hwang, B. K.; Zhou, X.; Young, J.; Telgenhoff, M. Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane, ACS Appl. Mater. Interfaces, 10(16), pp.14116-14123 (2018) (Published: Apr. 25. 2018) DOI: 10.1021/acsami.8b00723

214. Meng, X.; Lee, J.; Ravichandran, A.; Byun, Y.-C.; Lee, J.-G.; Lucero, A. T.; Kim, S. J.; Ha, M.-H; Young, C. D.; Kim, J. Robust SiNx/GaN MIS-HEMTs with Crystalline Interfacial Layer Using Hollow Cathode PEALD, IEEE Electron Device Letters, 39(8), pp. 26378 – 26386, 2018 (Published Aug 8. 2018) DOI: 10.1109/LED.2018.2849100

213. Jian Wang, Trey Daunis, Lanxia Cheng, Bo Zhang, Jiyoung Kim, Julia Hsu, “Combustion Synthesis of p-type transparent Conducting CuCrO₂ and Cu:CrOx thin films at 180C”, ACS Appl. Mater. Interface., 10(4), pp.3732-3738 (Jan. 31, 2018) DOI: 10.1021/acsami.7b13680

212. Ava Khosravi, Rafik Addou, Christopher M. Smyth, Ruoyu Yue, Christopher R. Comier, Jiyoung Kim, Christopher L. Hinkle, Robert M. Wallace, “Covalent Nitrogen Doping in molecular beam epitaxy-grown and bulk WSe₂”, Appl. Phys. Lett. Mater. 6, 026603 (2018)

211. Seon Jeng Lee, Chaewon Kim, Seok-Heon Jung, Riccardo Di Pietro, Jin-Kyun Lee, Jiyoung Kim, Miso Kim, Mi Jung Lee, “Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors,” Electronic Materials Lett., 14, pp. 1-6, (2018) Published: Jan. 2018 DOI: 10.1007/s13391-017-6414-0

2017

210. Hui Zhu, Qingxiao Wang, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Moon J. Kim, Robert M. Wallace, “Defects and surface structural stability of MoTe2 under vacuum annealing”, ACS Nano, 11(11), pp. 11005-11014 (2017)

209. Sijoon Kim, Dushyant Narayan, Jae-Gil Lee, Jaidah Mohan, Joy S. lee, Jaebeom Lee, Harrison S. Kim, Young-Chul Byun, Antonio T. Lucero, Chadwin D. Young, Scott R. Summerfelt, Tamer San, Luigi Colombo, Jiyoung Kim, “Large ferroelectric polarization of TiN/Hf05.Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget, Appl. Phys. Lett., 111, 242901(2017) 10.1063/1.4995619

208. Gwang-Sik Kim, Seung-Hwan Kim, Tae In Lee, Byung Jin Cho, Changhwan Choi, Joon Hyung Shim, Jiyoung Kim, Hyun-Yong Yu, “Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-type Germanium,” ACS Appl. Mater. Interface, 9 (41) pp.35988-35997 (2017) DOI: 10.1021/acsami.7b10346

207. Lanxia Cheng, Jaebeom Lee, Hui Zhu, Arul Vigneswar Ravichandran, Qingxiao Wang, Antonio T. Lucero, Moon J. Kim, Robert M. Wallace, Luigi Colombo, Jiyoung Kim, “Sub-10nm tunable hybrid dielectric engineering on MoS₂ for 2D materials-based devices,” ACS Nano, 11(10), 10243 (2017)

206. Lee A. Walsh, Christopher M. Smyth, Adam T. Barton, Zifan Che, Ruoyu Yue, Jiyoung Kim, Moon J. Kim, Robert M. Wallace, Chrisopher L. Hinkle, “Interface Chemistry on Contact Metals and Ferromagnets on the Topological Insulator Bi₂Se₃,” Jour. Phys. Chem. C, 121(42), pp.23551-23563 (2017) DOI: 10.1021/acs.jpcc.7b08480

205. Lorena Martin, Yuzhi Gao, Maxime Vallet, Iman Abdallah, Benedicte Warot-Fonrose, Christophe Ternailleau, Antonio T. Lucero, Jiyoung Kim, Alain Exteve, Yves J. Chabal, Carrole Rossi, “Performance enhancement via incorporation of ZnO nanolayers in energetic Al:CuO multilayers,” Langmuir, 33(41) pp.11086-11093 (2017) (DOI 10.1021/acs.langmuir.7b02964) (Published Sep. 26, 2017)

204. Yuzhi Gao, Lorena Marin, Eric Mattson, Jeremy Cure, Charith Nanayakkara, Jean-Francois Veyan, Antonio Lucero, Jiyoung Kim, Carole Rossi, Alain Esteve, Yves Chabal, “Basic Mechanisms of Al Interaction with the ZnO Surface,” Jour. Phys. Chem. C, 121 (23), pp. 12780-12788 (Jun. 15, 2017) DOI: 10.1021/acs.jpcc.7b02661

203. Diego Barrera, Ali Jawaid, Trey B. Daunis, Lanxia Cheng, Qingxiao Wang, Yun-Ju Lee, Moon Kim, Jiyoung Kim, Richard A. Vaia, Julia W. P. Hsu, “Inverted OPVs with MoS2 hole transport layer deposited by spray coating,” Materials Today Energy, 5, pp. 107-111 (2017) (Published on Sep. 1. 2017)

202. Yue, Ruoyu; Nie, Yifan; Walsh, Lee; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves; Hsu, Julia; Kim, Jiyoung; Kim, Moon; Colombo, Luigi; Wallace, Robert; Cho, Kyeongjae; Hinkle, Chris, “Nucleation and growth of WSe2: Enabling large grain transition metal dichalcogenides", 2D Materials, 4(4), 045019 (2017)

201. Chaewon Kim, Jin-Woo Park, Jiyoung Kim, Sung-Jei Hong, Mi Jung Lee, “A highly efficient indium tim oxide nanoparticles (ITO_NPs) transparent heater based on solution-process optimized with oxygen vacancy control, Jour. Alloys and Compounds, 726, pp. 712-719 (Dec. 5. 2017)

200. An, Youngseo; Lee, Changmin; Choi, Sungho; Song, Jeongkeun; Byun, Young-Chul; Park, Dambi; Kim, Jiyoung; Cho, Mann-Ho; Kim, Hyoungsub, “Comparative Study of Trimethylaluminum and Tetrakis(dimethylamido)titanium Pretreatments on Pd/Al2O3/p-GaSb Capacitors”, J. Phys. D, 50, 415103 (2017) https://doi.org/10.1088/1361-6463/aa874a

199. Diego Barrera, Qingxiao Wang, Yun-Ju Lee, Lanxia Cheng, Moon J. Kim, Jiyoung Kim, Julia W. P. Hsu, “Solution synthesis of few-layer MX2 (M=Mo,W; X=S, Se),” J. Mater. Chem. C, 5, pp. 2859-2864 (2017) DOI: 10.1039/C6TC05097B

198. Lee Walsh, Ruoyu Yue, Qingxiao Wang, Adam Barton, Rafk Addou, Christopher Smyth, Hui Zhu, Jiyoung Kim, Luigi Colombo, Moon Kim, Robert Wallace, Chris Hinkle, “WTe2 thin films grown by beam-interrupted molecular beam epitaxy,” 2D Materials, 4, 025044 (2017)

197. Young-Chul Byun, Jae-Gil Lee, Xin Meng, Joy S. Lee, Antonio T. Lucero, Si Joon Kim, Chadwin D. Young, Moon J. Kim, Jiyoung Kim, “Enhanced Electrical Stability in Recessed Gate GaN HEMTs on Si using Atomic Layer Deposited-ZrO2 at 100°C”, Appl. Phys. Lett. 111, 082905 (2017) doi: 10.1063/1.4998729

196. Hyun Ah Lee, Seong Yeoul Kim, Jiyoung Kim, Woong Choi, “Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistor,” J. Phys. D, 50, 094001 (2017) doi:10.1088/1361-6463/aa579f

195. Taejoo Park, Young-Chul Byun, Robert M. Wallace, Jiyoung Kim, “Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films,” Jour. Chem. Phys. 146, 053821 (2017) doi: http://dx.doi.org/10.1063/1.4975083

194. Daekyun Jeong, Chefwi Lim, Myeonggi Kim, Kyunghoon Jeong, Jae-Hun Kim, Jiyoung Kim, Jin-Goo Park, Kyeong-Sik Min, Jaegab Lee, “Self-Assembled Monolayer Modified MoO3/Au/MoO3 Multilayer Anodes for High Performance OLEDs, Electron. Mater. Lett, 13(1), pp. 16-24 (2017) (Published Jan. 10, 2017) DOI:10.1007/s13391-017-6381-5

2016

193. Xin Meng, Young-Chul Byun, Harrison S. Kim, Joy S. Lee, Antonio T. Lucero, Lanxia Cheng, Jiyoung Kim, “Atomic layer deposition of silicon nitride thin films: A review of recent progress, challenges, and outlooks,” Materials, 9(12), pp. 1007 (2016) doi:10.3390/ma9121007 (Published: Dec. 12 , 2016)

192. Lindsay Smith, John W. Murphy, Jiyoung Kim, S. Rozhdestvenskyy, I. Mejia, H. Park, D. R. Allee, M. Quevedo-Lopez, B. Gnade, “Thin film CdTe based neutron detectors with high thermal neutron efficiency and gamma rejection for security applications,” Nuclear Instruments & Methods in Physics Research Section A – Accelerators Spectrometers Detectors and Associate Equipment, 838, pp.117-123 (2016) DOI: 10.1016/j.nima.2016.09.026

191. Chaewon Kim, Fatima Tuz Johra, Jiyoung Kim, Jaegab Lee, Woo-Gwang Jung, Mi Jung Lee, “Improvement of On/Off Ratio in Solution-Processed Graphene-Zinc Oxide Resistive Switching Memory by Blending with Polystyrene”, Jour. Nanoscience and Nanotechnology, 16, pp. 12918-12922 (2016) doi:10.1166/jnn.2016.13674

190. Yong Jin Jo, Chaewon Kim, Jun Hyeok Lee, Mu Seok Ko, Anjae Jo, Jin-Yeol Kim, Woo-Gwang Jung, Nohyun Lee, Youn Hee Kim, Jiyoung Kim, Mi Jung Lee, “Development of Patterned 1D Metal Nanowires with Adhesion Layer for Mesh Electrodes of Flexible Transparent Conductive Films for Touch Screen Panels,” Jour. Nanoscience and Nanotechnology, 16, pp. 11586-11590 (2016) doi:10.1166/jnn.2016.13556

189. Myeonggi Kim, Chefwi Lim, Daekyun Jeong, Ho-Seok Nam, Jiyoung Kim, Jaegab Lee, “Design of a MoOx/Au/MoOx transparent electrode for high-performance OLEDs, Organic Electronics, 36, pp. 61-67 (2016) (Publication:Sep. 01, 2016)

188. Seonyoung Park, Yura Choi, Myungjun Kim, Hyungjung Shin, Jiyoung Kim, Woong Choi, “Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated MoS2 Crystals, J. Appl. Mater. Interfaces, 8, pp. 11189-11193 (2016) DOI: 10.1021/acsami.6b01568 (Published: Apr. 27, 2016)

187. Hui Zhu, Xiaoye Qin, Lanxia Cheng, Angelica Azcatl, Jiyoung Kim,Robert M.Wallace,”Remote Plasma Oxidation and Atomic Layer Etching of MoS2”, ACS Appl. Mater. Interface 8(29), pp. 19119-19126 (2016)

186. Angela Azcatl, Xiaoye Qin Chexi Zhang, Lanxia Cheng, Qingxia Wang, Ning Lu, Moon J. Kim, Jiyoung Kim, Kyeongjae Cho, Christopher Hinkle, Rafik Addou, Robert Wallace, “Nitrogen doping of MoS2: Chemcal and structural implications,” Nano Lett. 16(9), pp.5437-5443 (2016) http://dx.doi.org/10.1021/acs.nanolett.6b01853

185. Tae Joo Park, Young-Chul Byun, Robert Wallace, Jiyoung Kim, “Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100C) by Al2O3 incorporation, Appl. Surf. Sci. 371, pp.360-364 (2016) http://dx.doi.org/10.1016/j.apsusc.2016.02.243

184. Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hengji Zhang, Santosh KC, Manuel Quevedo-Lopez, Jian Wang, Julia Hsu, KJ Cho, Jiyoung Kim, “Organic Inorganic Hybrid Semiconductor Thin Films Deposited Using Molecular-Atomic Layer Deposition (MALD),” J. Mater. Chem. C. 4, pp. 2382-2389 (2016)

183. Antonio T. Lucero, YoungChul Byun, Xiaoye Qin, Robert M. Wallace and Jiyoung Kim, “InGaAs Passivation with an ALD ZnO Interlayer: Electrical and In-situ XPS Characterization,” Jap. Journ. Appl. Phys. 55(8), 08PC02 (Aug. 2016) http://dx.doi.org/10.7567/JJAP.55.08PC02

182. Mingun Lee, Dongkyu Cha, Jie Huang, Min-Woo Ha, Jiyoung Kim, “Fabrication of Single TiO2 Nanotube Devices with Pt Interconnections Using Electron and Ion Beam-Assisted Deposition”, Jap. Jour. Appl. Phys. 55(6), 06GG11 (2016) http://dx.doi.org/10.7567/JJAP.55.06GG11

181. Jie Huang, Mingun Lee, Antonio Lucero, Lanxia Cheng, Minwoo Ha, Ho-Seok Nam, Jiyoung Kim, “Organix-Inorganic Hybrid Dielectric Material Fabricated by Molecular-Atomic Layer Deposition (MALD) for Thin Film Transistor (TFT) Applications,” Jap. Jour. Appl. Phys. (Accepted)

180. Rahim Abdur, Jeongeun Lim, Kyunghoon Jeong, Mohammad Arifur Rahman, Jiyoung Kim, Jaegab Lee, Electron. Mater. Lett. 12(2), pp.197-204 (Published date: 10 March 2016) <2015 LS Academic Award> http://dx.doi.org/10.1007/s13391-016-5445-2

179. Lanxia Cheng, Srikar Jandhyala, Greg Mordi, A. A. Zacatzi, J. Huang, Stephen McDonald, Rafik Addou, R. M. Wallace, L. Colombo, Jiyoung Kim, “Structural and Electrical Properties of Fluorinated Graphene using CF4 Plasma,” J. Appl. Mater. Interfaces, 8, pp. 5002-5008 (2016)

178. Chandreswar Mahata, Youngseo An, Sungho Choi, Young-Chul Byun, De-Kyoung Kim, Taeyoon Lee, Jiyoung Kim, Mann-Ho-Cho, Hyoungsub Kim, “Electrical properties of the HfO-Al2O3 nanolaminates with homogeneous and graded compositions on InP,” Current Applied Phys. 16, pp.294-299 (2016)http://dx.doi.org/10.1016/j.cap.2015.11.022

2015

177. Rahim Abdur, Yung Kyu Lee, Kyunghoon Jeong, Ho-Seok Nam, Young-Ho Kim, Jiyoung Kim, Jaegab Lee, “Mechanical and electrical stability of PEDOT:PTS and Au source/drain electrodes for bottom contact OTFTs on plastic films under bending conditions,” Organic Electronics, 26, pp. 8-14 (2015)http://dx.doi.org/10.1016/j.orgel.2015.07.016

176. Antonio T. Lucero, Young-Chul Byun, Xiaoye Qin, Lanxia Cheng, Hyoungsub Kim, Robert M. Wallace, Jiyoung Kim, “In-situ XPS study of ALD ZnO Passivation of p-InGaAs,” Electron. Mater. Lett. 11(5), pp.769-774 (Sep. 25, 2015) http://dx.doi.org/10.1007/s13391-015-5150-6

175. Youngseo Ahn, Chandreswar Mahata, Changmin Lee, Sungho Choi, YoungChul Byun, Yu-Seon Kang, Taeyoon Lee, Jiyoung Kim, Mann-Ho Cho, Hyoungsub Kim, “Electrical and Band Structural Analyses of Ti1-xAlxOy Films Grown by Atomic Layer Deposition on P-type GaAs,” J. Phys. D. 48(41), 415302 (Sep. 17, 2015) http://dx.doi.org/10.1088/0022-3727/48/41/415302

174. Yang Xi, Martha Isabel Serna, Lanxia Cheng, Yang Gao, Mahoud Baniasadi, Rodolfo Antonio Rodriguez-Davila, Jiyoung Kim, Manuel Angel Quevedo-Lopez, Majid Minary, “Fabrication of MoS2 Thin Film Transistors via Selective Area Solution Deposition Methods,” J. Mater. Chem. C, 3, pp. 3842- 3847 (2015)http://dx.doi.org/10.1039/c5tc00635j

173. Lanxia Cheng, Kayoung Yun, Antonio Lucero, Jie Huang, Guoda Lian, Ho-Seok Nam, Robert M. Wallace, Moon Kim, Archana Venugopal, Luigi Colombo, Jiyoung Kim, “Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD,” J. Mater. Chem. C, 3(20), pp. 5192-5198 (May 28, 2015) http://dx.doi.org/10.1039/C5TC00062A

172. Jie Huang, Antonio T. Lucero, Lanxia Cheng, Hyeon Jun Hwang, Minwoo Ha, Jiyoung Kim, “Hydroquinon-ZnO NanoLaminate Depsotied by Molcular-Atomic Layer Deposition,” Appl. Phys. Lett. 106(12), 123101 (Mar. 23, 2015) http://dx.doi.org/10.1063/1.4916510

171. Hui Zhu, Stephen McDonell, Xiaoye Qin, Agelica Azcatl, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Peide D. Ye, Robert Wallace, “Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in-situ study”, ACS Appl. Mater. Interface, 7(13), pp. 13038-13048 (Jun. 17, 2015) http://dx.doi.org/10.1021/acsami.5b03192

170. Xiaoye Qin, Lanxia Cheng, Stephen McDonnell, Angelica Azcatl, Hui Zhu, Jiyoung Kim, Robert M. Wallace,”A Comparative Study of Atomic Layer Deposition of Al2O3 and HfO2 on AlGaN/Gan”, J. Mater. Sci.; Materials in Electronics, 26(7), pp. 4638-4643 http://dx.doi.org/10.1007/s10854-015-2926-2

169. Mu Seok Go, Ji-Min Song, Chaewon Kim, Jaegab Lee, Jiyoung Kim, Mi Jung Lee, “Hybrid Dielectric Layer for Low Operating Voltages of Transparent and Flexible Organic Complementary Inverter,” Electron. Mater. Lett. 11(2), pp. 252-258 (2015) http://dx.doi.org/10.1007/s13391-014-4290-4

168. Ruoyu Yue, Adam Barton, Stephen McDonnell, Angelica Azcatle, Hui Zhu, Jian Wang, Rafik Addou, Xing Peng, Ning Lu, Lanxia Chen, Julia W. P. Hsu, Luigi Colombo, Jiyoung Kim, Moon Kim, Robert Wallace, Christopher Hinkle, “HfSe2 Thin Films : 2D Transition Metal Dichalcogenides Grown by MBE,” ACS Nano, 9(1), pp.474-480 (2015) http://dx.doi.org/10.1021/nn5056496

167. Arjun Dahal, Rafik Addou, Angelica Azcatl, Horacio Coy-Diaz, Ning Lu, Xin Peng, Francis De Dios, Jiyoung Kim, Moon Kim, Robert Wallace, Matthias Batzill, "Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria" ACS Appl. Mater. Interface, 7(3), pp. 2082-2087 (2015) http://dx.doi.org/10.1021/am508154n

166. Angelica Azcatl, Santosh KC, Xin Peng, Ning Lu, Stepene McDonnell, Xiaoye Qin, Franis De Dios, Rafik Addou, Jiyoung Kim, Moon Kim, Kyeongjae Cho, Robert Wallace, “HfO2 on UV-O3 exposed TansitionMetal Dichalcogenides: Interfacial Reactions Study,” 2D Materials, 2(1), 014004 (Jan. 13, 2015)http://dx.doi.org/10.1088/2053-1583/2/1/014004

165. Ogyun Seok, Min-Koo Han, Young-Chul Byun, Jiyoung Kim, Hyung-Chang Shin, Min-Woo Ha, “Investigation of High-Voltage AlGaN/GaN Schottky Barrier Diodes with Post-O2 Treatment,” Solid State Electron. 103, pp.49-53 (2015) http://dx.doi.org/10.1016/j.sse.2014.09.007

2014

164. Kiyeoul Yang, Mohammad Arifur Rahman, Kyunghoon Jeong, Ho-Seok Nam, Jiyoung Kim, Jaegab Lee, “Semitransparent, thin metal grid-based hybrid electrodes for polymer solar cells,” Materials Science in Semiconductor Processing, 23, 104-109 (2014)http://dx.doi.org/10.1016/j.mssp.2014.02.042

163. Hong Dong, Wilfredo Cabrera, Xiaoye Qin, Barry Brenna, Dmitry Zhernokletov, Christopher L. Hinkle, Jiyoung Kim, Robert M. Wallace, “Silicon Interfacial Passivation Layer Chemistry for High-k/InP Interfaces,” ACS Appl. Mater. Interface, 6(10), pp. 7340-7350 (2014) http://dx.doi.org/10.1021/am500752u

162. Yuchen Liang, Jie Huang, Pengyuan Zang, Jiyoung Kim, Walter Hu, “Molecular layer depsotion of APTES on Si Nanowire biosensors; Surface characterization, stability and pH response,” Appl. Surf. Sci., 322, pp. 202-208 (2014) http://dx.doi.org/10.1016/j.apsusc.2014.10.097

161. Jie Huang, Mingun Lee, Antonio Lucero, “Area–selective ALD of TiO2 Nanolines with Electron-Beam Lithography,” J. Phys. Chem. C. 118, pp.23306-23312(2014) http://dx.doi.org/10.1021/jp5037662

160. Pradeep Bhadrachalam, Ramkumar Subramanian, Vishva Ray, LiangChieh Ma, Weicha Wang, Jiyoung Kim, Kyeonjae Cho, SeongJin Koh, “Energy-filtered cold electron transport at room temperature, Nature Communication, 5, 4745 (2014) http://dx.doi.org/10.1038/ncomms5745

159. Xiaoye Qin, Hong Dong, Jiyoung Kim, Robert M. Wallace, “A Crystalline oxide passivation for Al2O3-AlGaN-GaN,” Appl.Phys.Lett. 105, 141604 (2014)http://dx.doi.org/10.1063/1.4897641

158. Lanxia Cheng, Xiaoye Qin, Antonio T. Lucero, Angelica A. Zacatzi, Robert M. Wallace, Kyeongjae Cho, and Jiyoung Kim, “Atomic layer deposition of a high-k dielectric on MoS2 usinb trimethylaluminum and ozone,” ACS Appl. Mater. Interface, 6, pp. 11834-11838 (2014)

157. Xiaoye Qin, Antonio T. Lucero, Angelica Azcatl, Jiyoung Kim, Robert M. Wallace, “In-situ X-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatment for Al2O3/AlGaN/GaN stacks” Appl. Phys. Lett. 105, 011602 (2014)

156. Hong Dong, Wilfredo Cabrera, Xiaoye Qin, Barry Bennan, Dmitry Zhemokletov, Christopher Hinkle, Jiyoung Kim, Yves Chabal, Robert M. Wallace, “Silicon Interface Passivation Layer Chemistry for High-k/InP Interfaces,” ACS App. Mater. Interface. 6, pp. 7340-7345 (2014) http://dx.doi.org/10.1021/am500752u

155. Angelica Azcatle, Stephen McDonnell, Santosh KC, Xing Peng, Hong Dong, Rafik Addou, Greg I. Mordi, Ning Lu, Jiyoung Kim, Moon J. Kim, K.J. Cho, Robert M. Wallace, “MoS2 functionalization for ultra-thin atomic layer deposited dielectrics,” Appl. Physc. Lett., 104, 111601 (2014) http://dx.doi.org/10.1063/1.4869149

154. Saungeun Park, Sangchul Lee, Greg Mordi, Srikar Jandhyala, Min-Woo Ha, Jang-Sik Lee, Luigi Colombo, Robert Wallace, Byoung Hun Lee, Jiyoung Kim, “Triangular-Pulse Measurement for Hyteresis of High-Performance and Flexible Graphene Field-Effect Transistors,” IEEE Electron Dev. Lett., 35(2), pp. 277-279 (2014) http://dx.doi.org/10.1109/LED.2013.2294828

153. Tae Joo Park, Prasanna Sivasubramani, Brian Coss, Robert Wallace, Jiyoung Kim, “Effects of growth temperature and oxidant feeding time on dual C and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films,” Appl. Surf. Sci., 292, pp.880-885 (2014)http://dx.doi.org/10.1016/j.apsusc.2013.12.072

152. Sangchul Lee, Omokhodion David Iyore, SaungEun Park, Young Gon Lee, Srikar Jandhyala, Chang Goo Kang, Greg Mordi, Yonghun Kim, Manuel Quevedo, Bruce E. Gnade, Robert M. Wallace, Byoung Hee Lee, and Jiyoung Kim, “Facile process to achieve high mobility in graphene field-effect transistors on a flexible substrate,” Carbon. 68, pp.791-797, (2014) http://dx.doi.org/10.1016/j.carbon.2013.11.071

151. S. McDonnell, A. Azcatl, G. Mordi, C. Floresca, A. Prikle, L. Colombo, J. Kim, M. Kim, R. M. Wallace, “Scaling of HfO2 dielectric on CVD graphene,” Appl. Surf. Sci. 294, pp. 95-99 (2014) http://dx.doi.org/APSUSC-D-13-04291R1

2013

150. B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, and R. M. Wallace, “Chemical and electrical characterization of the HfO2/InAlAs interface,” J. Appl. Phys.,114, 104103 (2013) http://dx.doi.org/10.1063/1.4821021

149. Cheng Gong, C. Huang, J. Miller, L. Cheng, Y. Hao, D. Cobden, J. Kim, R. S. Ruoff, R. M. Wallace, K. Cho, X. Xu, Y. J. Chabal, “Metal contacts on physical vapor deposited monolayer MoS2,” ACS Nano, 7(12), pp. 11350-11357, (2013)

148. Xiaoye Qin, Hong Dong, Barry Brennan, Angelica Azacatl, Jiyoung Kim, Robert M. Wallace, “Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on Al0.25Ga0.75N,” Appl. Phys. Lett.103(22), 221604 (2013)

147. Cheng Gong, Herman Carlo Floresca, David Hinojos, Stephen McDonnell, Xiaoye Qin, Yufeng Hao, Srikar Jandhyala, Greg Mordi, Jiyoung Kim, Luigi Colombo, Rodney S. Ruoff, Moon J. Kim, Kyeongjae Cho, Robert M. Wallace, Yves J. Chabal, “Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide,” Jour. Phys. Chem. C, 117, pp. 23000-23008 (2013) http://dx.doi.org/10.1021/jp408429v

146. Xiaoye Qin, Barry Brennan, Hong Dong, Jiyoung Kim, Christopher L. Hinkle, and Robert M. Wallace, “In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N,” J. Appl. Phys., 113(24), 244102 (2013)

145. D. M. Zhernokletov, P. Lukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, R. M. Wallace, “Surface and Interfacial Reaction Study of InAs(100)-Crystalline oxide interface,” Appl. Phys. Lett. 102(21), 211601(2013) http://dx.doi.org/10.1097/ID.0b013e3182920da3

144. H. Dong, B. Brennan, X. Qin, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace, “In-Situ Study of Atomic Layer Deposition Al2O3 on GaP (100),” Appl., Phys. Lett. (103), 121604 (2013) http://dx.doi.org/10.1063/1.4821779

143. H. Dong, K. C. Santosh, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, R. M. Wallace, “In-situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP,” Jour. Appl. Phys. 114 (15), 154105 (2013) http://dx.doi.org/10/1063/1.4825218

142. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C.L.Hinkle, and R.M. Wallace, “In-situ study of HfO2 atomic layer deposition on InP(100)”, Appl. Phys. Lett., 102, 171602 (2013) http://dx.doi.org/10.1063/1.4803486

141. Stephen McDonnell, Roberto Longo, Oliver Seitz, Josh Ballard, Greg Mordi, Don Dick, James Owen, John Randall, Jiyoung Kim, Yves Chabal, Kyeongjae Cho, Robert Wallace,” Controlling the Atomic Layer Deposition of Titanium Dioxide on Silicon: Dependence of Surface Termination and Deposition Temperature,” J. Phys.Chem.C., 117, pp.20250-20259 (2013) http://dx.doi.org//10.1021/jp4060022-20250

140. S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, Jiyoung Kim, C. Hinkle, M. J. Kim, R. M. Wallace, “HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability,” ACS Nano, 7(11), pp. 10354-10361 (2013) http://dx.doi.org/10.1021/nn404775u

139. S. Jandhyala, G. Mordi, D. Mao, M. A. Quevedo-Lopez, B. E. Gnade, J. Kim, “Graphene-ferroelectric hybrid devices for multi-valued memory system,” Appl. Phys. Lett. 103, 022903 (2013) http://dx.doi.org/10.1063/1.4813264

138. Dmitry M. Zhernokletov, Hong Dong, Barry Brennan, Jiyoung Kim, Robert M. Wallace, Michael Yakimov, Vadim Tokranov, Serge Oktyabrsky, “Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb (100)”, J. Vac. Sci. Technol. A 31(6), 060602-1~5 (2013) http://dx.doi.org/10.1116/1.4817496

137. Jie Huang, Mingun Lee, Antonio Lucero, Jiyoung Kim, “Organic-ionorganic hybrid nano-laminates fabricated by ozone assisted molecular-atomic layer deposition,” Chem. Vap. Dep 19(4-6), pp. 142-148 (2013). (Invited paper for a special ALD edition) http://dx.doi.org/10.1002/cvde.201207041

136. Jiyoung Kim, Srikar Jandhyala, “Atomic Layer Deposition of Dielectrics for Carbon-based Electronics,” Thin Solid Films, 546, 85-93 (2013) (invited review article), http://dx.doi.org/10.1016/j.tsf.2013.03.078

135. Brian E Coss, Prasana Sivasubramani, Barry Brenna, Robert M. Wallace, Jiyoung Kim,”Measurement of Schottky Barrier Height Tuning Using Dielectric Dipole Insertion Method at Metal-Semiconductor Interfaces by Photoelectron Spectroscopy and Electrical Characterization Techniques,” J. Vac. Sci. Tech. B., 31, 0201202 (2013) http://dx.doi.org/10.1116/1.4788805

134. Young Joon Suh, Ning Lu, Seong Yong Park , Tae Hun Lee, Sang Hoon Lee, Dong Kyu Cha, Min Gun Lee, Jie Huang, Sung-Soo Kim, Byeong-Hyeok Sohn, Geung-Ho Kim, Min Jae Ko, Jiyoung Kim, Moon J. Kim, “Three-dimensional Observation of TiO2 Nanostructures by Electron Tomography”- MICRON, 46, pp.35-42 (2013) http://dx.doi.org/10.1016/j.micron.2012.12.002

133. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In-situ studies of III-V surfaces and high-k atomic layer deposition,” Solid State Phenomenal, 195, pp. 90-94 (2013)

2012

132. Steven McDonnell, Adam Pirkle, Jiyoung Kim, Luigi Colombo, Robert M. Wallace, “Trimethy-Aluminum and ozone interactions with graphite in atomic layer deposition of Al2O3,” J. Appl. Phys. 112 (10), 104110 (2012) http://dx.doi.org/10.1063/1.4766408

131. Barry Brennan, Xiaoye Qin, Hong Dong, Jiyoung Kim, Robert M. Wallace, “In-situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN,” Appl. Phys. Lett. 101, 211604 (2012); http://dx.doi.org/10.1063/1.4767520

130. Mingun Lee, Antonio Lucero, Jiyoung Kim, “One-dimensional Nanomaterials for Field Effect Transistors Type Biosensor Applications,” Trans. Electr. Electron. Mater. 13(4), pp. 165-170 (2012) http://dx.doi.org/10.4313/TEEM.2012.13.4.165 (Review Article)

129. S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhemokletov, C. L. Hinkle, J. Kim, R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems,” Appl. Phys. Lett. 100, 141606 (2012) http://dx.doi.org/10.1063/1.3700863

128. G. Mordi, S. Janhyala, C. Floresca, S. McDonnel, M. Kim, R. Wallace, C. Luigi, J. Kim, “Low-k organic dielectric for dual-gate graphene field effect transistors,” Appl. Phys. Lett. 100(19), 193117 (2012) http://dx.doi.org/10.1063/1.4711776

127. B. Brennan, M. Milojevic, R. Contreras-Guerrero, H. C. Kim, M. Lopez-Lopez, J. Kim, R. M. Wallace, “Investigation of interfacial oxidation control using sacrificial metallic Al and La passivation layers on InGaAs,” J. Vac. Sci. Tech. B. 30, 04E104 (2012)

126. D. Zhemokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “Optimization of the ammonium sulfide (NH4)2S passivation process on InSb (111)A, J. Vac. Sci. Tech. B 30, 04E103 (2012)

125. D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong, “Low temperature fabrication and characertization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., 100, 192101 (2012) http://dx.doi.org/10.1063/1.4712564

124. S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P. R. Cha, J. Ahn, R. M. Wallace, Y. Chabal, M. Kim, L. Colombo, K. Cho, J. Kim, “Non-Destructive Ozone Functionalization Scheme for Scalable High-k Dielectrics on Graphene,” ACS Nano 6(3), pp. 2711-2730 (2012) http://dx.doi.org/10.1021/nn300167t

123. D.M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R.M. Wallace, “In-situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition,” Appl. Surf. Sci., 258(14) pp.5522-5525 (2012)

122. Jie Huang, Mingun Lee, Jiyoung Kim, “Selective atomic layer deposition with E-beam patterned self-assembled monolayers,” Jour. Vac. Sci. Tech. A, 30(1), 01A128 (2012)http://dx.doi.org/10.1116/1.3664248

121. Jang-Sik Lee, Hyunchul Kim, Pil-Ryung Cha, Jiyoung Kim, Hyunjung Shin, “Size Effects of the Stabilization and Growth of Tetragonal ZrO2 Crystallities in a Nanotubular Structure,” J. Nanosci. & Nanotech., 12, 3177-3180 (2012) http://dx.doi.org/10.1166/jnn.2012.5602

120. D. MacFarlane, M. Christensen, K. Liu, T. LaFave Jr., G. Evans, N. Sultana, T. Kim, J. Kim, J. Kirk, N. Huntoon, A. Stark, M. Babkowski, L. Hunt, V. Ramakrishna, “Four-Port Nanophotonic Frustrated Total Internal Reflection Coupler,” IEEE Photonics Tech. Lett., 24(1), pp.58-60 (2012) http://dx.doi.org/10.1109/LPT.2011.2172204

119. D. MacFarlane, M. Christensen, A. Nagdi, G. Evans, L. Hunt, N. Huntoon, J. Kim, T. Kim, J. Kirk, T. LaFave Jr., K. Liu, V. Ramakrishna, M. Babkowski, N. Sultana, “Experiment and Theory of an Active Optical Filter,” IEEE Jour., Quantum Electron., 48(3) pp. 307-317 (2012) http://dx.doi.org/10.1109/JQE.2011.2174615

118. P. Sivasubramani, T. J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, R. M. Wallace, J. Kim, Y. Cao, D. Jena, H. Xing, “In-situ X-ray photoelectron spectroscopy study of trimethyl aluminum and water half-cycle treatments on HF-treated and O3 oxidized GaN substrates,” Physica Status Solidi RRL, 6(1), pp.22-24 (2012) http://dx.doi.org/10.1002/pssr.201105417

117. K.J. Chung, T. J. Park, P. Sivasubramani, J. Ahn, J. Kim, “Impact of ozone concentration on atomic layer deposited HfO2 on GaAs,” Microelectron. Eng. 89, pp. 80-83 (2012) http://dx.doi.org/10.1016/j.mee.2011.03.150

2011

116. B. Brennan, H. Dong, D. Zhernokletov, J. Kim, R. M. Wallace, “Surface and interface reaction study of half cycle atomic layer deposited Al2O3 on chemically treated InP surfaces,” Appl. Phys. Express., 4, 125701 (2011) http://dx.doi.org/10.1143/APEX.4.125701

115. Brian E. Coss, Wei-Yip Loh, Herman C. Floresca, Moon J. Kim, Prashant Majhi, Robert M. Wallace, Jiyoung Kim, and Raj Jammy, “Dielectric Dipole Mitigate Schottky Barrier Height Tuning Using Atomic Layer Deposited Aluminum Oxide For Contact Resistance Reduction,” Appl. Phys. Lett., 99, 102108(2011)

http://dx.doi.org/10.1063/1.3633117

114. B. Chakrabarti, H. Kang, B. Brennan, T. J. Park, K. D. Canley, A. Pirkle, S. McDonnell, J. Kim, R. M. Wallace, E. M. Vogel, “Investigation of tunneling current in SiO2 / HfO2 gate stacks for flash memory applications,” IEEE Trans. Electron Devices, 58(12) pp. 4189-4195 (2011) http://dx.doi.org/10.1109/TED.2011.2170198

113. M. Milojevic, R. Conteras-Guerrero, E. Connor, B. Brennan, P. Hurley, J. Kim, C. Hinkle, R. Wallace, “In-situ XPS characterization of Ga2O passivation of GaAs and In0.53Ga0.47As prior to ALD high-k dielectric deposition,” Appl. Phys. Lett. 99, 042904 (2011) http://dx.doi.org/10.1063/1.3615666

112. S. McMonnell, D. Zhernokletov, A. Kirk, J. Kim, R. M. Wallace, “In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution,” Appl. Surf. Sci., 257, 8747-8751 (2011)

111. B. Lee, A. Hande, H. Kim, R. M. Wallace, J. Kim, X. Liu, M. Rousseau, J. Yi,. H. Li, D. Shenai, and J. Suydam, “LaHfO nano-laminates for high-k gate dielectric applications,” Microelectron. Eng. 88(12), 3385-3388 (2011), http://dx.doi.org/10.1016/j.mee.2011.05.033

110. Brian E. Coss, Casey Smith, Wei-Yip Loh, Prashant Majhi, Robert M. Wallace, Jiyoung Kim, and Raj Jammy, “Contact Resistance Reduction to FinFET Source/ Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method,” IEEE Electron. Dev. Lett. 32(7), pp.862-864 (2011) DOI:10.1109/ LED.2011.2148091

109. T. J. Park, P. Sivasubramani, B. E. Coss, B. Lee, R. M. Wallace, J. Kim, M. Rousseaus, X. Liu, H. Li, J.-S. Lehn, D. Hong, D. Shenai, “Reduction of residual C and N-related impurities by Al2O3 insertion in atomic-layer-deposited La2O3 thin films,” Electrochem. Solid. Lett. 14 (5), G23-G-26 (2011) DOI:10.1149/ 1.3545965

2010

108. D. B. Baer, M. H. Engelhard, A. S. Lea, P. Nachimuthu, T. C. Droubay, J. Kim, B. Lee, C. Mathews, R. L. Opilia, L. V. Saraf, W. F. Stickle, R. M. Wallace, B. S. Wright, “Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2,” J. Vac. Sci. Technol. A, 26 (5), pp. 1060-1072 (2010) DOI:10.1116/ 1.3456123

107. T. J. Park, P. Sivasubramani, B. E. Coss, H.-C. Kim, B. Lee, R. M. Wallace, J. Kim, “Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in-situ x-ray photoelectron spectroscopy,” Appl. Phys. Lett., 97, 092904 (2010) http://dx.doi.org/10.1063/1.3481377

106. A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo, R. M. Wallace, “The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition,” Appl. Phys. Lett., 97, 082901 (2010)

105. T. J. Park, K. J. Chung, H. C. Kim, J. H. Ahn, R. M. Wallace, J. Kim, “Reduced metal contamination in atomic-layer-deposited high-k films grown using O3 oxidant generated without N2 assistance,” Electrochem. Solid-State Lett., 13 (8), pp. G65-67 (2010)

104. B. Lee, G. Mordi, M.J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, KJ Cho, J. Kim, L. Colombo, “Characteristics of high-k Al2O3 dielectric using ozone based atomic layer deposition,” Appl. Phys. Lett., 97, 043107 (2010) DOI: 10.1063/1.3054348 This paper is also linked “Virtual Journal of Nanoscale Science and Technology” by American Institute of Physics

103. C. Bae, Y. Yoon, W. S. Yoon, J. Moon, J. Kim, H. Shin, “Hierarchical titania nanotubes with self-branched crystalline nanorods,” ACS Appl. Mater. Interface, 2, pp. 1581-1587 (2010)

102. A. P. Kirk, M. Milojevic, J. Kim, R. M. Wallace, “An in-situ examination of atomic layer deposited alumina/InAs (100) interfaces,” Appl. Phys. Lett., 96, 202905 (2010)

101. M. Lee, T. W. Kim, C. D. Bae, H. J. Shin, J. Kim, “Fabrications and Applications of Metal –Oxide Nanotubes,” JOM, 62(4), pp.44-49 (2010) (Invited Review Article)

2009

100. M. Milojevic, R. Contreras-Guerrero, M. Lopez-Lopez, J. Kim, R. M. Wallace, “Characterization of the “clean-up” of the oxidized Ge (100) surface by atomic layer deposition,” Appl. Phys. Lett., 95, 212902 (2009)

99. B. E. Coss, W. Y. Loh, R. M. Wallace, J. Kim, B. Sassman, P. Majhi, R. Jammy, “Near Band Edge Schottky Barrier Height Modulation Using High-κ Dielectric Dipole Tuning Mechanism,” Appl. Phys. Lett., 95, 222105 (2009)

98. D. Cha, S. Y. Park, S. J. Ahn, H. Horii, D. H. Kim, Y. K. Kim, S. O. Park, U. I. Jung, M. J. Kim, J. Kim, “In-situ observation and characterization of structural evolution in a phase-change memory device by TEM-STM,” Microsc. Microanal. 15 (Suppl 2) pp. 716-717 (2009)

97. D. Cha, M. Lee, H. Shin, M. J. Kim, J. Kim, “Functionalization of Single TiO2 Nanotube for Bio-Sensor Applications,” Microsc. Microanal. 15 (Suppl 2) pp.1180-1181 (2009)

96. G. Lee, B. Lee, J. Kim, K. Cho, “Ozone Adsorption on Graphene: Ab Initio Study and Experimantal Validation,” Jour. Phys. Chem. C, 113, pp. 14225-14229 (2009)

95. R. M. Wallace, P. C. McIntyre, J. Kim, Y. Nishi, “Atomic layer deposition of dielectrics on Ge and III-V materials for ultrahigh performance transistors,” MRS Bull., 34(7), pp. 493-503 (2009) (Invited review article)

94. J. Kim, T. W. Kim, “Initial surface reactions of atomic layer deposition,” JOM, 61(6), pp.19-24 (2009) (Invited review article)

93. C. Bae, H. C. Kim, D. Han, H. Yoo, J. Kim and H. Shin, “Nanoscale ampoule fabrication by capillary autoclosing,” Small, 5(17), 1936-1941 (2009)

92. C. Bae, Y. Yoon, H. Yoo, D. Han, J. Cho, B. H. Lee, M. M. Sung, M. G. Lee, J. Kim, H. Shin, “Controlled fabrication of multiwall anatase TiO2 nanotubular architectures,” Chem. Mater., 21, pp. 2574-2576 (2009)

91. B. Lee, T. J. Park, A. Hande, K. J. Chung, M. J. Kim, R. M. Wallace, J. Kim, X. Liu, J. Yi, H. Li, M. Rousseau, D. Shenai, and J. Suydam, “Electrical properties of atomic layer deposited La2O3 films using a novel La formamidinate precursor and ozone,” Microelectron. Eng., 86, pp. 1658-1661 (2009)

90. B. Brennan, M. Milojevic, H. C. Kim, P. K. Hurley, J. Kim, G. Hughes, R. M. Wallace, “Half-cycle Atomic Layer Deposition reaction study using O3 and H2O oxidation of Al2O3 on the (NH4)2S passivated In0.53Ga0.47As surface,” Electrochem. Solid. Lett., 12, H205-H208 (2009)

89. B. Lee, K. Choi, A. Hande, R. Wallace, Y. Senzaki, M. Rousseau, J. Suydam, J. Kim, “Characteristics of the ALD ZrO2 gate capacitors,” Microelectron. Eng., 86(3), pp. 272 -276 (2009)

88. B. Coss, F. Aguirre-Tostado, R. M. Wallace, J. Kim, “Evaluation of TaN based NMOS metal gate solution as a function of La contents,” Microelectron. Eng. 86(3), pp. 235-239 (2009)

2008

87. M. Milojevic , F. Aguirre-Tostado , C. L. Hinkle, H. C. Kim , E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces,” Appl. Phys. Lett., 93, 202902 (2008) http://dx.doi.com/10.1063/1.3033404

86. M. Milojevic , C. L. Hinkle, F. Aguirre-Tostado , H.C. Kim , E. M. Vogel, J. Kim, and R. M. Wallace, “Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces,” Appl. Phys. Lett., 93, 252905 (2008) http://dx.doi.com/10.1063/1.3054348

85. J. Kim, D. K. Cha, S. Y. Park, M. J. Kim “Characterization of nanodevices by using in-situ TEM-STM,” Microscopy and Microanalysis., 14 (Suppl 2), 20-1 (2008)

84. C. Y. Kang, J. W. Yang, J. Oh, R. Choi, Y.J. Suh, H. C. Floresca, J. Kim, M. J. Kim, B. H. Lee, H. H. Tseng, R. Jammy, “Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-k dielectric SOI FinFETs,” IEEE Electronic Device Letters, 29, 487 (2008)

83. F. S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, T. Yang, Y. Xuan, P.D. Ye, and R.M. Wallace, “S-passivation of Gas and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates,” Appl. Phys. Lett., 93, 061907 (2008)

82. C. L. Hinkle, A. M. Sonnet, M. Milojevic, F. S. Aguirre-Tostado, H. C. Kim, J. Kim, R. M. Wallace, and E. M. Vogel, “Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics ,” Appl. Phys. Lett. 93, 113506 (2008)

81. F. S. Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, R. M. Wallace, “In-situ study of surface reactions of atomic layer deposited LaXAl2-XO3 films on atomically clean In0.2Ga0.8As,” Appl. Phys. Lett., 93, 172907 (2008)

80. J. G. Wang, J. Kim, C. Y. Kang, B. H. Lee, R. Jammy, R. Choi, M. J. Kim, “Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack,” Appl. Phys. Lett., 93, 161913 (2008)

79. B. Lee, H. Kim, E. M. Vogel, R. M. Wallace, J. Kim, “Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics,” Appl. Phys. Lett., 92, 203102 (2008) This paper is also linked “Virtual Journal of Nanoscale Science and Technology” by American Institute of Physics

78. C. Y. Kang, J. W. Yang, J. Oh, R. Choi, Y. J. Suh, H. C. Floresca, J. Kim, M. Kim, B. H. Lee, H. H. Tseng, R. Jammy, “Effects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate / high-k dielectric SOI FinFETs,” IEEE Elect. Dev. Lett., 29(5), pp.487-489 (2008)

77. C. Bae, S. Kim, B. Ahn, J. Kim, M. M. Sung, H. Shin, “Template directed gas-phase fabrication of oxide nanotubes,” J. Mater. Chem., 18, pp.1362-1367 (2008)

76. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, R. M. Wallace, “GaAs interfacial self-cleaning by atomic layer deposition,” Appl. Phys. Lett., 92, 071901 (2008)

75. C. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. Sung, H. Shin, “Template directed oxide nanotubes: Synthesis, characterization, and applications,” Chem. Mater., 20, pp. 756-767 (2008) (Review Article)

2007

74. C. Hinkle, A. Sonnet, E. Vogel, S. McDonnell, M. Milojevic, B. Lee, F. Aguirre-Tostado, J. Choi, J. Kim, R. Wallace, “Frequency dispersion reduction and bond conversion on n-type GaAs by in-situ surface oxide removal and passivation,” Appl. Phys. Lett., 91, 163512 (2007)

73. C. Bae, J. Moon, H. Shin, J. Kim, M. M. Sung, “Fabrication of monodisperse asymmetric colloidal clusters by using contact area lithography (CAL),” J. Am. Chem. Soc., 129, pp. 14232-14239 (2007)

72. J. Yun, S. Kim, S. Seo, M. Lee, D. Kim, S. Ahn, Y. Park, J. Kim, H. Shin, “Random and localized resistive switching observation in ultra-thin (5nm) Pt/NiO/Pt,” Physica Status Solidus- Rapid Research Letters (RRL), 1 (6), pp. 280-282 (2007)

71. L. Tao, A. Crouch, F. Yoon, B.K. Lee, J. S. Guthi, J. Y. Kim, J. Gao and W. Hu, “Surface energy induced patterning of organic and inorganic materials on heterogeneous Si surfaces,” Jour. Vac. Sci. Tech. B., 25, pp. 1993-1997 (2007)

70. D.K. Cha, B. Lee, J. Jeon, J. Kim, M.J. Kim, “Fabrication and Characterization of Single Nanowire and Nanotube Devices,” Microscopy and Microanalysis, 13 (S02), pp 720-721 (August, 2007)

69. T.H. Lee, D. K. Cha, J. G. Wang, J. Jeon, J. Kim, R. M. Wallace, B. E. Gnade, M. J. Kim, “HRTEM study on the interface of Si based resonant tunneling diodes (RTD) by UHV wafer bonding technology,” Microscopy and Microanalysis, 13 (S02), pp 804-805 (August, 2007)

68. H.C. Floresca, J. Wang, M. Kim, J. Kim, C.Y. Kang, R. Choi, S.C. Song, H. H. Tseng, B.H. Lee, R. Jammy, “Determination of strain in the Silicon channel induced by a metal electrode,” Microscopy and Microanalysis, 13 (S02), pp 838-839 (August, 2007)

67. Chang Yong Kang, Rino Choi, M.M. Hussain, Jinguo Wang, Young Jun Suh, H.C. Foresca, Moon J. Kim, Jiyoung Kim, Byoung Hun Lee, Raj Jammy, “Effects of metal gate-induced strain on the performance of metal oxide – semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric,” Appl. Phys. Lett., 91, 033511(2007)

66. K. Seo, K. Varadwaj, D. Cha, J. In, J. Kim, J. Park, B. Kim, “Synthesis and electrical properties of single crystalline CrSi2 nanowires,” J. Phys. Chem. C, 111, 9072-9076 (2007)

65. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, R. M. Wallace, “Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectric on Si (100),” Jour. Appl. Phys., 101, 114108 (2007)

2006

64. P. Sivasubramani, J. Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, ”Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100),” Appl. Phys. Lett., 89, 152903 (2006)

63. P. Sivasubramani, J. Kim, M. J. Kim, B.E. Gnade, R. M. Wallace, ”Effect of nitrogen incorporation on the thermal stability of sputter deposited lanthanum aluminate dielectrics on Si (100),” Appl. Phys. Lett., 89, 152903 (2006)

62. D.K.Cha, Bongki Lee, J. Huang, Jiyoung Kim, R.M. Wallace, B.E.Gnade, M.J. Kim, “Electrical characterization of a single TiO2 nanotube by using modified FIB/ SEM,” Microsc. Microanal., 12 (Supp 2), pp.1272-1273 (2006)

61. H. Shin, C. Kim, B. Lee, J. Kim, H. Park, D. Min, J. Jung, S. Hong, “Formation and Process Optimization of Scanning Resistive Probe,” Journal of Vacuum Science and Technology B, B24 (5), pp. 2417-2420 (2006) – This paper is also linked “Virtual Journal of Nanoscale Science and Technology, Vol. 14 (15), Oct. 9, 2006 by American Institute of Physics

60. M. H. Shin, M. S. Park, N. E. Lee, J. Kim, C. Y. Kim, J. Ahn, ”Dry etching of TaN/HfO2 gate-stack structure in BCl3/Ar/O2 inductively coupled plasmas”, Journal of Vacuum Science and Technology, A24 (4), pp. 1373-1379 (2006)

59. J. Lee, H. J. Yang, J. H. Lee, J. Kim, W. J. Nam, H. J. Shin, Y. K. Ko, J. G. Lee, E. G. Lee, C. S. Kim, ”Highly conformal deposition of pure Co films by MOCVD using Co2(CO)8 as a precursor”, Journal of the Electrochemical Society, 153(6), G539-G542 (2006)

58. S. Kim, T. W. Kwon, J.Y. Kim, H. Shin, M. M. Sung, and J. G. Lee, “Selective Vapor Deposition of Poly(3,4-ethylenedioxythiophene) Thin Film on an n-Octadecyltrichlorosilane Monolayer Oxidized by Ultraviolet Photolithography,” J. Korean Phys. Soc., 49, pp. S736 – S740 (2006)

57. Y. G. Kim, S. Y. Li, S. Jung, S. M. Lee, J. Kim, Y. T. Kho, “Corrosion behaviors of sputter-deposited steel thin film for electrical resistance sensor material,” Surf. & Coatings Tech., 201, 1731-1738 (2006)

2005

56. Y. K. Ko, S. Lee, H. M. Lee, H. J. Yang, J. Kim, J. H. Lee, H. J. Shin, W. J. Nam and J. G. Lee, "Enhanced Adhesion of Cu Film on a Low-k Material", Journal of Korean Physics Society, 47, pp. S467-S470 (2005)

55. H. Yang, T. Kwon, J. Lee, J. Kim, H. Shin, M. Sung, J. Lee, “Selective deposition of Co thin films for TFT gate electrode by non-optic method; micro-contacting and MOCVD”, Journal of Korean Physics Society 47, pp. S397-S400 (2005)

54. C. Nistorica, J. Liu, I. Gory, G. Skidmore, F. Mantiziba, B. Gnade, J. Kim, “Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption an reaction for microelectromechanical devices,” Journal of Vacuum Science and Technology A, 23, pp. 836 – 840 (2005)

53. M. Shin, S. Na, N. Lee, T. Oh, J. Kim, T. Lee, J. Ahn, “Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma,” Japanese Journal of Applied Physics, 44 (7B), pp. 5811 – 5818 (2005)

2004

52. J. Lee, T. Oh, J. Kim, “PZT Capacitors on Top of CrTiN/TiN Double Barrier Layers”, Integrated Ferroelectrics, 64(5), pp.289-295 (2004)

51. H. Shin, D. Jung, J. Lee, M. Sung and J. Kim, “Formation of TiO2 and ZrO2 Nanotubes Using Atomic Layer Deposition with Ultra-Precise Wall Thickness Control,” Advanced Materials, 16(14), pp. 1197-1200 (2004) (the cover article)

50. D. Jeong, J. Lee, J. Kim, “Effects of Various Oxidizers on the ZrO2 Thin Films Deposited by Atomic Layer Deposition”, Integrated Ferroelectrics, 67, pp. 41-48 (2004)

49. S.-H. Jung, D.-K. Jeong, J. Y. Kim, W.-G. Jung, “Fabrication of CdS Thin Film Pattern by CBD Method Using the Self-Assembled Monolayer”, Materials Science Forum, Vol. 449-452, pp. 449-452 (2004)

48. D. K. Jeong, N. H. Park, S. H. Jung, W.-G. Jung, H. Shin, J. G. Lee, J. Y. Kim, “Fabrication of Oxide/Semiconducting Coaxial Nanotubular Materials Using Atomic Layer Deposition”, Materials Science Forum, Vol. 449-452, pp. 1169-1172 (2004)

47. H. Yang, H. Lee, J. Lee, J. Lee, B. Cho, J. Kim, C. Jeong, K. Chung, C. Lee, H. Hong, “Mechanism for silicide formation in Ag(Cu)/Si and Ag(Co)/Si upon Annealing”, Journal of Korean Physical Society, 45 (5), pp. 1263-1267 (2004)

46. D. Jeong, H. Shin, J. Lee, J. Kim, “Synthesis of Metal Oxide Nanotubular Structure Using Atomic Layer Deposition on Nanotemplates”, Journal of Korean Physical Society, 45 (5), pp. 1249-1252 (2004)

45. Y. K. Ko, S. Lee, H.J. Yang, J.Y. Kim, H.J. Shin, J.H. Lee and J.G. Lee , E.G. Lee, C.M. Lee "Resistivity Variation with the Grain Growth and the Boron Content in Cu(B) Films", Jour. Korean Physics Society. Vol. 44, No.1. pp. 6-9 (2004)

2003

44. Jiyoung Kim, Seong-Ho Kong and Jinho Ahn, "Effects of Glass Forming Elements (Si, Al and Bi) on Characteristics of Zr Based Oxide Films", Jour. Korean Physics Society Vol.43, No.5, pp854-857 (2003)

43. Seong-Ho Kong, Daekyun Jeong, Jinho Ahn and Jiyoung Kim, "Crystallization Behaviors of Zirconium Based Oxide Films with Glass Forming Additives for Gate Dielectric Applications", Integrated Ferroelectrics Vol. 57, pp.1193-1200 (2003)

42. Chang-Bae Jeon, Seong-Ho Kong, and Jiyoung Kim, "Characteristics of zirconium silicate films prepared by using different co-sputtering methods", Jour. Korean Physics Society, Vol. 42, No.2, pp.267-271 (2003)

41. Y.K. Ko, D.S. Park, B.S. Seo, H.J. Yang, H.J. Shin, J.Y. Kim, J.H. Lee, W.H. Lee, P.J. Reucroft, J.G. Lee, "Studies of cobalt thin films deposited by sputtering and MOCVD", Materials Chemistry and Physics, Vol. 80, pp. 560-564 (2003)

2002

40. Chang-Bae Jeon, Seong-Ho Kong, Hyunjung Shin, Jinho Ahn, Jiyoung Kim , "Characteristics of zirconium based amorphous thin films deposited by co-sputtering", Integrated Ferroelectrics, Vol. 48, pp. 33-40 (2002)

39. Juhwan Park, Bongsik Choi, Nohhon Park, Hyun Jung Shin, Jae Gab Lee, and Jiyoung Kim, "Characteristics of ZrO2 Thin Films by Atomic Layer Deposition for Alternative Gate Dielectric Application", Integrated Ferroelectrics, Vol.48, pp. 23-32 (2002)

38. S.J. Hong, H.J. Yang, J.Y. Kim, H.J.Shin, J.H. Lee, Y.K. Ko, and J.G. Lee, “Effects of Co Precipitation on Si Diffusion in Ag(Co)/Si During Postannealing", Jour. Korean Physics Society, Vol.41, No.4, pp. 417-421 (2002)

37. June-Mo Koo, Jiyoung Kim, Eun-Gu Lee, "Effects of Recovery Annealing on Reliability of SrBi2Ta2O9 Based Ferroelectric Memory Devices,” Journal of Materials Science Letter, Vol. 21 (8), pp. 653-655 (2002)

36. June-Mo Koo, JooWhan Park, JaeGab Lee, Jiyoung Kim, “Degradation of Ferroelectric Capacitors during the Forming Gas Annealing", Jour. Korean Physics Society, Vol. 40, No. 4, pp. 729-732 (2002)

35. Hyungsub Min, Taeho Kim, Changbae Jeon, Jin-Ho Ahn, Jiyoung Kim, “Characteristics of Pt/PZT/TiO2/Nitride/Si Structure Capacitors with ICP Nitride Treatments", Jour. Korean Physics Society, Vol.40, No. 1, pp. 172-175 (2002)

34. W. H. Lee, B. S. Cho, B. J. Kang, C. O. Jeong, Y. G. Kim, J.Y. Kim and J.G. Lee, "Enhanced Properties of Ag Alloy Films for Advanced TFT-LCD's", Jour. Korean Physics Society, Vol.40, No. 1, pp. 110-114 (2002)

33. W.H. Lee, H.J. Yang, C.M. Lee, Y.G. Kim, J.Y. Kim and J.G. Lee, "Taper Etching of Copper Using an Inductively Coupled O2 Plasma and Hexafluoroacetylacetone", Jour. Korean Physics Society, Vol.40, No. 1, pp. 152-155 (2002)

32. W.H. Lee, B.S. Seo, I.J. Byun, Y.G, Ko, E.G. Lee, J.Y. Kim and J.G. Lee "Carrier Gas Effects on Copper Films Deposited from (hfac)Cu(DMB)(3,3-dimethyl-1-butene) by Using MOCVD", Jour. Korean Physics Society, Vol.40, No. 1, pp. 107-109 (2002)

2001

31. H. Min, C. Jun, W. Lee, J. Lee, J. Ahn, J. Kim, "Effects of Nitridation Treatments for SBT/Ta2O5 Stack Gate Capacitors", Integrated Ferroelectrics, Vol. 40, pp. 211-218 (2001)

30. Taeho Kim, Hyung-sub Min, June-Mo Koo, Jae-Gab Lee, Jaeheon Han and Jiyoung Kim, "Nitridation of Si Surface Using ICP For MeFIS-FET Applications", Ferroelectrics, Vol. 260, pp.273~278 (2001)

29. June-Mo Koo, Taeho Kim Hyung-seob Min, Jin-Ho Ahn, Jae-Gab Lee and Jiyoung Kim, "Influences of Hydrogen Damages in Ferroelectric Thin Film Capacitors", Ferroelectrics, Vol 260, pp.279~284 (2001)

28. Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim, Young-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J. Reucroft, Chongmu Lee, and Jaegab Lee, “Thermal stability enhancement of Cu interconnects employing a self-aligned MgO Layer obtained from a Cu(Mg) alloy film", Japanese Journal of Applied Physics, Vol. 40, Part I, NO.4A, pp.2408-2412 (2001)

27. June-Mo Koo, Ilhwan Bang, TaeHo Kim, Jae-Gab Lee, and Jiyoung Kim, "Effects of Hybrid structure Top Electrodes of PZT Capacitors on Hydrogen Induced damages", J. Kor. Phys. Soc., Vol. 38, No.3, pp.273-276 (2001)

2000

26. Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim, Youg-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J. Reucroft, Chongmu Lee, and Jaegab Lee, "Effect of Mg content in Cu(Mg)/SiO2/Si multilayers on the resistivity after annealing in an oxygen ambient", Journal of Vacuum Science and Technology A, Vol. 18(6) Nov/Dec, pp.2972-2977 (2000)

25. Jiyoung Kim, June-Mo Koo, TaeHo Kim and Ilhwan Bang, "Effects of Ti/Ir Top electrodes of PZT Capacitors on the Hydrogen Related Degradation" Integrated Ferroelectrics, vol.31, pp.367-376 (2000)

24. TaeHo Kim, Hyung-Seok Kim, June-Mo Koo, HyungSub Min and Jiyoung Kim, "Investigation on Various Insulator Layers for MFIS Capacitors", Integrated Ferroelectrics, vol.30, pp.121-128, (2000)

23. Eun-Gu Lee, Jong-Kook Lee, Woo-Yang Jang, Jae-Gab Lee, Jiyoung Kim, "Domain switching characteristics of preferentially oriented lead zirconate titanate thin films", Journal of Materials Science Letters Vol. 19(21) Nov., pp.1917-1919 (2000)

22. Wonhee Lee, Heunglyul Cho, Beomseok Cho, Jiyoung Kim, Yong-Seok Kim, Woo-Gwang Jeong, Hoon Kwon, Jinhyung Lee, P.J. Reucroft, Chongmu Lee, and Jaegab Lee, "Factors Affecting Passivation of Cu(Mg) Alloy Films", Journal of the Electrochemical Society, Vol. 147 (8), pp.3066-3069 (2000)

21. W. H. Lee, H. L. Cho, B. S. Cho, J. Y. Kim, W. J. Nam, Y-S. Kim, W. G. Jung, H. Kwon, J. H. Lee, J. G. Lee, P. J. Reucroft, C. M. Lee and E. G. Lee, "Diffusion barrier and electrical characteristics for a self-aligned MgO layer obtained from a Cu(Mg) alloy film", Applied Physics Letters, Vol. 77 (14), pp.2192-2194 (2000)

1999

20. E. G. Lee, J. K. Lee, J. G. Lee, J. Y. Kim, H. M. Jang, "Zr/Ti ratio dependence of the deformation in the hysteresis loop of Pb(Zr,Ti)O3 thin films", Jour. of Materials Science Letters, Vol. 18, pp.2025-2027 (1999)

19. Jaeheon Han, Jiyoung Kim, Tae-song Kim, Jeong-seog Kim, "Performance of Fabry-Perot microcavity structures with corrugated diaphragms", Sensors and Actuators, Vol, 79, pp. 162-172, (1999)

18. E. G. Lee, J. K. Lee, J. G. Lee, J. Y. Kim, H. M. Jang, "Deformation in the hysteresis loop of Pt/Pb(Zr,Ti)O3/Pt thin film capacitor", Jour. of Materials Science Letters, Vol. 18, pp.1033-1035 (1999)

17. Hyung-Seok Kim, Ilhwan Bang, Jiyoung Kim, "Electrical Properties of MFIS Capacitors with PZT/TiO2 Layers", J. Kor. Phys. Soc., Vol.35, pp.S123-S126 (1999)

1998

16. Seung Yoon Lee, Ki-Chang Song, Jiyoung Kim, Joo-Huik Sohn, Jinho Ahn, "High Transmittance SiC Membrane Prepared by ECR-CVD in Combination with RTA", Jpn. Jour. Appl. Phys., Part1, Vol.37 Part1 (12B), pp.6841-6844 (1998)

15. Jiyoung Kim, Ilhwan Bang, "The Electrical Characteristics of Sol-Gel Derived PLZT Thin Films", J. Kor. Phys. Soc., vol. 32, pp.S1556-S1558 (1998)

14. J. Lee, J. Kim, H. Shin, “MOCVD of TiN and/or Ti from new precursors,” Thin Solid Films, 320 (1), pp. 15-19 (1998)

13. Sungwon Jung, Jae Gab Lee, Jiyoung Kim, "The Asymmetric Behaviors of PZT Thin Film Capacitors with Different Top Electrode Metals", J. Kor. Phys. Soc., Vol. 32, pp.S1710-S1713 (1998)

1997

12. Jae-Gab. Lee, Jiyoung Kim, Jeong-Yong Lee, Jae-Sung Roh, Jeung-Soo Huh, "P and As Implantation Enhanced Formation of Metal-Free Oxide on WSi2", Jpn. J. Appl. Phys. Part1, Vol.36 (12A), pp. 7140-7145 (1997)

11. Jiyoung Kim, "X-ray and Plasma Process Induced Damages to PLZT Capacitor Characteristics for DRAM Applications", Kor. J. Ceram., Vol. 3 (3), pp.213-217 (1997)

1995

10. Jack Lee, Bo. Jiang, C. Sudhama, R. Khamankar, Jiyoung Kim, "Nonlinearity of Ferroelectric Capacitors on DRAM R/W Operations", Integrated Ferroelectrics, Vol. 7, pp.319-328 (1995)

9. R. Khamankar, Jiyoung Kim, C. Sudhama, Bo Jiang, Jack Lee, "Effects of Electrical Stress Parameters on Polarization Loss in Ferroelectric PZT Thin Film Capacitors", IEEE Electron. Dev. Lett., Vol. 16(4), pp.130-132 (1995)

1994

8. R. Khamankar, Jiyoung Kim, C. Sudhama, Jack Lee, "The Effect of Deposition Temperature on the Material and Electrical Properties of PZT Thin Films for ULSI DRAM Applications", Integrated Ferroelectrics, Vol. 5, pp.169-176 (1994)

7. Bo Jiang, C. Sudhama, R. Khamankar, Jiyoung Kim, J. Lee, "Effects of Nonlinear Storage Capacitor on DRAM READ/WRITE Operations", IEEE Electron. Dev. Lett., Vol. 15(4), pp.126-128 (1994)

6. C. Sudhama, Jiyoung Kim, V. Chikarmane, R. Khamankar, J. Lee, A. Tasch, "Optimization of Pb Compensation with Thickness-Scaling of Thin Sputtered PZT Films in the Range for Memory Applications", J. Electronic Mater., Vol.23 (12), pp.1261-1268 (1994)

1993

5. C. Sudhama, V. Chikarmane, Jiyoung Kim, J. Lee, "The Effect of Lanthanum Doping on the Electrical Properties of Sol-Gel derived Ferroelectric Lead Zirconate Titanate(PZT) for ULSI DRAM Applications", J. of Vac. Sci. Tech., B11(4) pp.1302 - 1308 (1993)

4. Jack Lee, V. Chikarmane, C. Sudhama, Jiyoung Kim, "Sputtered PZT and PLZT Thin Film Capacitors for ULSI Memory Applications", Intergrated Ferroelectrics, Vol. 3, pp.113-120 (1993)

1992

3. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, "Comparison of the Electrical Characteristics and Phase Transformation Kinetics of DC-Magnetron Sputtered PZT Thin Film Capacitors annealed in O2 and N2 ambients for ULSI DRAM Applications", J. of Vac. Sci. Tech., A10 (4), pp.1562-1568 (1992)

2. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee, "Annealing of Lead Zirconate Titanate (65/35)Thin Films for Storage Dielectric Applications: Phase Transformation and Electrical Characteristics", J. Electronic Mater., Vol.21 (5), pp.503-512 (1992)

1991

1. V. Chikarmane, C. Sudhama, Jiyoung Kim, J. Lee., A. Tasch, "A Comparative Study of the Perovskite Phase Microstructure Evolution and Electrical Properties of Lead Zirconate Titanate Thin Film Capacitors annealed in Oxygen and Nitrogen Ambients", Appl. Phys. Lett., Vol.59 (22), pp.2850-2852 (1991)