- By The Year -
45. J. Kim, “Advanced Dielectrics for 2D Materials Devices” Electrical and Computer Engineering Colloquium, Univ. of Alabama (Tuscaloosa, AL) (Jan. 20, 2016)
44. J. Kim, “ALD of Dielectrics for Advanced Channel Materials – Initial Interface Formation”, 2015 IWDTF (International Workshop on Dielectric Thin Films for future electron device” Tokyo, Japan (Nov2-4. 2015)
43. J. Kim, Tutorial, “Synthesis and Integration of 2D Materials,” iMRC, Cancun, Mexico (Aug. 16. 2015)
42. J. Kim, “Molecular-Atomic Layer Deposition (MALD) for Novel Flexible Hybrid Materials,” iMRC, Cancun, Mexico (Aug. 16-21. 2015)
41. J. Kim, “Organic-Inorganic Hybrid Films Using Molecular-Atomic Layer Deposition (MALD)” SPIE, San Diego, CA (Aug. 17-21, 2014)
40. Jiyoung Kim, “Ozone Based Atomic Layer Depsotion for Gate Dielectrics,” ALD conference, Kyoto, Japan (Jun. 15-18, 2014)
39. Jie Huang, Mingun Lee, Antonio Lucero, Jiyoung Kim, “Molecule Engineering for ALD Applications,” ACS conference, Dallas, TX (Mar. 15-20, 2014)
38. J. Kim, “Gate Dielectrics on Graphene,” AVS National Conference, Long Beach, CA (Oct. 27-Nov.1, 2013)
37. J. Kim, “Initial ALD half cycle study using in-situ XPS and electrical characterization,” NIMS conference, Tscuba, Japan, (Jul. 1-4, 2013)
36. J. Kim, “New Waves in Semiconductor Research” Samsung Global Technology Outreach Forum (HwaSung, Korea) (Nov. 29. 2012)
35. J. Kim, “Graphene FETs for Future Device Applications” Qualcomm, San Diego/CA (Nov. 2. 2012)
34. J. Kim, “Top gated graphene transistors,” 2012 IUMRS-ICA (Pusan, Korea) (Aug. 26-31, 2012)
33. J. Kim, “ Gate Dielectric Engineering for Graphene Device Applications“ ICMAP 2012 (International Conference on Microelectronics and Plasma Technology (Jeju, Korea) (July 4-6, 2012)
32. J. Kim, “Dielectric Engineering for Graphene FET Applications,” SKKU Colloquium, (Suwon, Korea) (May 17. 2012)
31. J. Kim, “In-situ XPS study on atomic layer deposition of high-k dielectrics,” E-1, 221st ECS Meeting (Seattle, WA) (May 6-10, 2012)
30. J. Kim, “In-situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene,” E-2, 221st ECS Meeting (Seattle, Wa) (May 6-10, 2012)
29. J. Kim, “R&D Activities for Touch Panel Devices in UT-Dallas,” Colloquium, SoonCheon National University (SoonCheon, Korea) (Feb. 13. 2012)
28. J. Kim, “R&D Activities for Flexible Electronics in UT-Dallas,” Colloquium, JeonBuk National University (JeonJu, Korea) (Feb. 13. 2012)
27. J. Kim, “Graphene for Touch Panel Applications,” International Workshop for Touch Panel Technology, Naju (NaJu, Korea), (Feb. 9-11. 2012)
26. J. Kim, “ALD for Micro and Nano electronics,” 1st International Symposium SEMINA, Hermosillo, Sonoma, Mexico. (Feb. 2-3, 2012)
25. J. Kim, “ALD of Gate Dielectrics for Graphene FETs” 2011 International Forum on Functional Materials & the 2nd Symposium on Advances in Functional Materials (IFFM & AFM), Jeju, Korea, July 28-31, 2011
24. J. Kim, “Atomic Layer Deposited Nanotubes for Biosensor Applications,” 3rd International Conference on Microelectronics and Plasma Technology (ICMAP-2011), Dalian, China, Jul. 4-7, 2011
23. J. Kim, “International R&D collaboration for Semiconductor Industries,” 2010 System IC Workshop, COSAR, Jeju, Korea, Feb. 15-16., 2011
22. J. Kim, “ALD for Micro/Nanoelectronics,” International Conference on Nano Science and Nano Technology – ICNST 2010, Nov. 8-9. 2010, Gwangju, Korea
21. J. Kim, “Flatform for logic device – Foundry,” International Symposium of 19th Anniversary KETI, Aug. 25, 2010
20. J. Kim, “Ozone ALD for Gate Dielectric Applications,” International Union of Materials Research Societies – International Conference on Electronics Materials 2010 (IUMRS-ICEM 2010), Aug. 24 (Aug. 22-27) 2010, Seoul, Korea
19. J. Kim, “Low temperature ALD for flexible electronics,” XIX International Material Research Congress (IMRC 2010), Aug. 16 (Aug. 15-20), 2010, Cancun, Mexico
18. J. Kim, “Ozone based ALD of high-k gate dielectrics,” IEEE UGIM 2010 – University Government Industry Micro/Nano Biennial Symposium, Jul. 1 (June. 28 –July 1) 2010, Purdue University, West Lafayette, IN
17. J. Kim, B. Lee, G. Mordi, S. Jandhyala, “ALD of Al2O3 dielectrics for top-gated graphene device applications,” 10th International Conference on Atomic Layer Deposition-ALD-2010,” Jun. 22. (Jun. 20-23. 2010) Seoul, Korea
16. J. Kim, “High-k Dielectric Deposition (Al2O3) Using Ozone-based ALD (atomic layer deposition) for Graphene-based Devices,” GIST MSE colloquium, May. 27. 2010, GwangJu, Korea
15. J. Kim, “In-situ XPS half cycle study of ALD,” 2nd International Conference on Microelectronics and Plasma,” (Sep. 17- Sep. 25) Sep. 23. 2009, Pusan, Korea
14. J. Kim, H.C. Kim, B. Lee, A. Hande, E.M. Vogel, M.J. Kim, and R.M. Wallace, “ALD of High-k Gate Dielectrics on Si and Alternative Substrates, AVS 55th International Symposium, October 21, 2008, Boston, MA, USA
13. Jiyoung Kim, D. K. Cha, O. Lourie, M. J. Kim, “Characterization of nanodevices by using in-situ TEM-STM (Invited talk), 2008 M&M Meeting, Jun. 29 – Jul.3, 2008, Albuquerque, NM
12. Jiyoung Kim, Dongkyu Cha, Moon J. Kim, “Single nanotube and nanowire device fabrication using focused ion beam system,” The Sixth Pacific Rim International Conference on Advanced Materials and Processing, Jeju/Korea, Nov. 5-9, 2007
11. C. Bae, H. Shin and J. Kim, “Fabrication of Nanoscale Tubular Structures and Capsules of Oxides by ALD,” 212th Meeting of the Electrochemical Society, Washington DC, Oct. 7 – 12 (2007)
10. Jiyoung Kim, “ALD for Deposition Equipment for Nano-Regime,” Materials Science and Engineering Colloquia, Korea University, Seoul/Korea, Jul. 6. 2007.
9. Jiyoung Kim, “Resistance RAM (ReRAM),” Texas Instruments, Dallas/TX, Mar. 2. 2007
8. Jiyoung Kim, “HfO2/SiO2 Wedding Cake,” SEMATECH, Austin/TX, May. 25. 2006
7. Jiyoung Kim, “Atomic Layer Chemical Vapor Deposition for Microelectronics and Nanotechnology Applications,” Materials Science and Engineering Colloquia, University of Texas at Arlington, Arlington/TX, Nov. 11, 2005.
6. Jiyoung Kim, “Atomic Layer Chemical Vapor Deposition (ALCVD) for Microelectronics and Nanotechnology Applications,” Materials Science and Engineering Colloquia, University of North Texas, Denton/TX, Sep. 17, 2003
5. Jiyoung Kim, “Alternative Gate Dielectrics for the Next Generation CMOS applications,” Advanced Materials Engineering Colloquia, HongIk University, Seoul/Korea, Sep. 17. 2002
4. Jiyoung Kim, JuneMo Koo, “Novel dual oxidation barrier layers for high density ferroelectric memory applications,” 3rd Workshop on high-k dielectric / ferroelectric materials and devices, Seoul National University, Seoul/Korea, Dec. 17, 2001 (Invited)
3. Jiyoung Kim, “Fabrication and Applications of Ferroelectric Thin Films,” 5th Lecture Series on Nano Materials and Technology, Chosun University, Kwangju/ Korea, Mar. 21. 2001
2. Jiyoung Kim, “Ferroelectric Memory Devices,” Materials Science and Engineering Colloquia, GIST, KwangJu/Korea, Feb. 23. 2000
1. Jiyoung Kim, “PLZT Thin Film Capacitors for Gb Generation DRAM Applications,” 1996 Spring Symposium of the Korean Materials Research Society, TaeGu/ Korea, May. 17. 1996 (Invited)