Jaebeom Lee

Jaebeom Lee is currently a second-year graduate student as a Ph.D candidate in the department of materials science and engineering at the University of Texas at Dallas(UTD) under the direction of Prof. Jiyoung Kim. He got his bachelor’s degree in the department of Advanced Materials Engineering from the Kookmin University in Seoul, South Korea. Since joining the group, he have contributed to the growth, characterization and device integration of two dimensional materials including hexagonal Boron Nitride (hBN) and Transition Metal Dichalcogenides (TMDs) for future nanoelectronic applications.

Now, his main research project is to design and integrate extremely thin low-k dielectrics on 2 dimensional materials (TMDs and Graphene) as a tunneling barrier for the applications, such as BiSFETs and ITFETs supported by South West Academy of Nanoelectronic(SWAN) center, Semiconductor Research Corporation(SRC) program sponsored by Nanoelectronics Research Initiative and NIST. For this project, now he makes an effort to develop engineered organic-inorganic hybrid dielectric films on TMDs because of their promising advantages in terms of flexibility and tunable chemical composition, allowing their materials and electrical properties to be tailored to the desired applications. In addition, he makes simultaneously an effort to grow large scale and high quality hexagonal Boron Nitride (hBN) with thickness scalability on 2D materials including HOPG and MoS2 because the hBN has been considered as one of the promising materials for tunneling devices due to its excellent properties including good thickness scalability, fewer dangling bonds, minimal scattering effect and so on.

His main tool is the Molecular Atomic Layer Deposition(MALD) system (NCD-D100 Tech) which is the modified version of ALD. The MALD(or ALD) allows to deposit high quality organic, inorganic and hybrid dielectric films which has excellent uniformity, reproducibility and thickness scalability based on sequential, surface self-limiting reactions between precursors. Also, he has been using another tool, called RT(rapid thermal)-ALCVD (NCD-G100) that has lamp heaters being capable of heating up 1050C for his hBN growth project. Also, for materials characterization, he can use a variety of tools available in the UTD such as AFM, SEM, XPS, XRD, Raman, FIB and TEM.