Harrison Kim
Harrison Kim [Link to Research Gate] is currently pursuing Ph.D in the Department of Materials Science and Engineering (MSE) at the University of Texas at Dallas (UTD) supervised under Prof. Jiyoung Kim. He finished his B.S., and M.S. in Department of Chemistry from the Hanyang University in Seoul, Korea. He devoted working on stitching grain boundaries of chemical vapor deposition (CVD) grown 2-D nanomaterial, such as graphene, to demonstrate integrated wafer-scale arrays of top-gated field-effect transistors in large size, while maintaining its superior intrinsic properties using selective atomic layer deposition (ALD) technique. And this stitching work led paper publication to renowned journal, Nanoscale in Sep 2015, and PCT patent [Link to Google Scholar]. He was also selected in 20th HumanTech Paper AWARD hold by Samsung Electronics, one of the most eminent paper awards in Korea. Additionally, he worked thoroughly on developing flexible organic light emitting diode (OLED) encapsulation layer with Samsung Display Corporation (SDC) [in-press].
Now, he is currently studying abnormal behavior of various metal oxide on monolayer material. The work is supported by National Research Foundation of Korea (NRF). The goal of studying abnormal behavior of metal oxide is to design new concept of 2-D material for future device application. He and his colleague are on stage of adopting in-situ ALD electrical measurement to study how metal oxide behaves abnormally at the interface between metal oxide and a variety of monolayer materials. In addition to that, he works on characterizing SiNx films using plasma-enhanced atomic layer deposition (PEALD) tool and this work is supported by Dow Corning Corporation. The goal of this project is to evaluate whether the SiNx film prepared meets the industiral needs, which holds both chemically inert properties and electrically insulating properties, as it is of high importance to industry. By employing surface characterization tools, such as XRD, XPS, and FT-IR, he is trying to correlate factors impacting research progress.
Harrison Kim
ALD mostly relies on sequential saturated surface reaction of each precursor pulsed, providing surface self-limiting reaction manner. His main tool is the PEALD chamber. PEALD is the technique best suited for growing high quality thin films at sufficiently low temperatures to be usable in modern CMOS fabrication, while possessing its excellent control in thickness, uniformity, step-coverage and reproducibility. This makes PEALD to have its advantage on resolving thermal budget issue that conventional thermal ALD had, without any compensation of merits of ALD. Also, in UTD, there are many easily accessible state-of-the-art surface characterizing tools which help affiliates to understand better in their research [Link to Cleanroom Tools].