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dualbeam FEI Quanta3D FEG
dualbeam FEI Quanta3D FEG
Referente: Natascia De Leo
Electron-Beam Lithography
Focused Ion Beam lithography
Available Processes:
- Deposizione assistita da fascio elettronico/ionico focalizzato (EBID - FIBID)
- Litografia a fascio elettronico (EBL)
- Microscopia elettronica a scansione in trasmissione (STEM)
- Microscopia elettronica a scansione su campioni biologici o isolanti (LVSEM - ESEM)
- Misure elettriche in situ ed electron/ion beam testing (EBT - IBT)
- Nanomanipolazione meccanica di singole nanostrutture (Nanomanipolazione)
- Preparativa lamelle TEM e sezioni FIB di ispezione (TEM-Prep)
Key Features and Accessories:
Detectors:
- Everhardt-Thornley SED
- Low-vacuum SED (used in low-vacuum)
- Gaseous SED (GSED) (used in ESEM mode)
- IR-CCD Solid-State
- BSED
- Gaseous analytical BSED (GAD) (used for low-vacuum analytical applications)
- 4-segment STEM
Chamber:
- Eucentric goniometer stage
- X=50mm
- Y=50mm
- Z=25mm
- Maximumsample height = 50mm
- T=-15° to +75°
- R=nx360°
- Minimumstep:300nm
- Repeatability @0° tilt 2μm
- Repeatability @52° tilt 4μm
Gas chemistry options:
- Platinum metal deposition
- SiOx insulator deposition
Key Specifications:
- Electron Beam Resolution:
- 1.2nm at 30kV (high SE)
- 1.5nm at 30kV(low SE)
- Accelerating Voltage:
- 200V - 30kV
- Probe Current: up to 200nA
- Magnification: 30 x - 1280 kx in "quad" mode
- Ion Beam Resolution: 7 nm at 30 kV
- Allowed Materials:Flat samples, Si, SiO2, metals
- Forbidden Materials:Powders, volatile
- Substrate Size:4 cm
Safety Procedures:
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