RTP Jipelec

Available Processes:

• Grafting and annealing of block-copolymers, synthesis of graphene, rapid themal oxidations

Key Features and Accessories:

• Working pressure: 10^-3 to 10^3 mbar
• Substrate temperature: from RT to 1100 °C
• Substrate size up to 5''

Allowed Materials:

• Si, SiO2, Cu, Co, Polymers