III-V semiconductors cleaning

III-V compound semiconductor surface cleaning

Removal of high-dose ion-implanted photoresist on GaAs

Related papers

1. Jihoon Na and Sangwoo Lim*, "Phosphoric acid-peroxide mixture surface preparation for the improvement of InGaAs channel characteristics", J. Ind. Eng. Chem. 102 (2021) 35-43.[view paper]

2. Jinhoon Lee, Jihoon Na, Changjin Son and Sangwoo Lim*, "Hexene passivation on a p-type Zn-doped InGaAs surface", Mater. Chem. Phys. 251 (2020) 123197.[view paper]

3. Jihoon Na and Sangwoo Lim*, "Elemental behaviors of InGaAs surface after treatment in aqueous solutions", Microelectron. Eng. 212 (2019) 27-36.[view paper]

4. Eunseok Oh and Sangwoo Lim*, "Removal of high-dose P+ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile", J. Ind. Eng. Chem. 77 (2019) 230-237.[view paper]