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Selective etching behavior of SiGe via controlled N(III) species with formation of NOCl for the integration of Gate-All-Around transistor
Selective etching behavior of SiGe via controlled N(III) species with formation of NOCl for the integration of Gate-All-Around transistor
Kiwon Song and Sangwoo Lim*,
Surf. Interfaces 87 (2026) 108960.
Understanding of indium-galluim-zinc oxide wet etching in acidic solutions: Reaction mechanism, kinetics, and surface properties
Understanding of indium-galluim-zinc oxide wet etching in acidic solutions: Reaction mechanism, kinetics, and surface properties
Wonje Lee and Sangwoo Lim*,
Chem. Eng. J. Adv. 25 (2026) 101016.
서울특별시 서대문구 연세로 50, 연세대학교 제 1 공학관 148-150호 & 첨단과학기술연구관 205호A148-150, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, KoreaTel: (02)2123-7796
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