Control of selective SiGe etching by enhanced formation of hydroxyl radicals and by surface passivation in peracetic acid solution
Seunghyo Lee, Kiwon Song, and Sangwoo Lim*,
Appl. Surf. Sci. 661 (2024) 160063.
Understanding the contributions of F–, HF, and HF2– to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5