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Control of selective SiGe etching by enhanced formation of hydroxyl radicals and by surface passivation in peracetic acid solution
Control of selective SiGe etching by enhanced formation of hydroxyl radicals and by surface passivation in peracetic acid solution
Seunghyo Lee, Kiwon Song, and Sangwoo Lim*,
Appl. Surf. Sci. 661 (2024) 160063.
Understanding the contributions of F–, HF, and HF2– to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5
Understanding the contributions of F–, HF, and HF2– to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5
Bumsik Kim, Wonje Lee, and Sangwoo Lim*,
Appl. Surf. Sci. 657 (2024) 159829.
서울특별시 서대문구 연세로 50, 연세대학교 제 1 공학관 148-150호 & 첨단과학기술연구관 205호A148-150, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, KoreaTel: (02)2123-7796