Front-End-Of-Line

2-1. Noble Doping Process for 3D Structure

The determination of suitable semiconductor materials for stacked integrated circuits remains uncertain, requiring the development of source technology capable of selectively doping complex 3D structures. To address this, a study is being planned to achieve high-concentration doping without inducing defects in the channel. This will be accomplished by depositing a polymer film containing dopants, independent of the specific 3D structures, utilizing iCVD. The focus will be on SiGe-based MBCFET, power semiconductors like Ga2O3/GaN/SiC, and next-generation semiconductor materials such as IGZO/IGTO. The objective is to investigate a technique that facilitates high-concentration doping while fundamentally preserving the lattice structure and preventing damage caused by implants.

2-2. Memristor of Neuromorphic Device for DNN/SNN

The active matrix of hybrid resistive random access memory (H-ReRAM) homogeneously consists of organic and inorganic components, which allow simultaneous metal atoms migration and oxygen vacancy generation in the active matrix. The polymer matrix and inorganic components in hybrids give unique properties to H-ReRAM devices, according to the combination of electrode and hybrid matrix. It has the potential to precise control of conducting filament by two different filament dynamics in the hybrid matrix. The H-ReRAM is one of the alternative candidates to achieve low-power memory devices as well as neuromorphic and cognitive computing devices. (Co-work with KAIST, KU and KNU)

2-3. 3D Architecture for DRAM and NAND Flash

We are living in the era of Big data, where an enormous amount of information is transmitted between computers, IoT (Internet Of Things) devices, data centers, etc. As the amount of data and speed of communication increases, memory devices with higher performance are demanded. Dynamic Random Access Memory (DRAM) and NAND Flash Memory devices are the key players in the computer memory hierarchy, having the advantage in their operating speed and endurance. Performance improvement of DRAM and NAND Flash with conventional materials has reached its limit and people are seeking new materials with functionality, high-k value, and better leakage characteristics.