[6] Seung Hyun Oh, Chang Hyeon Lee, Hee Tae Kim, Jeong Ik Park, Min Ju Kim, Se Jun Park, Sung Gap Im, Sung Haeng Cho and Byung Jin Cho*, "Overcoming Performance Limitation of IGZO FET by iCVD Fluorine Doping" 2024, VLSI Syposium, 2024/06/16

[5] M. J. Kim, "Highly Reliable Organic Non-Volatile Memory Devices Based-on Hybrid Films via iCVD Process", 2023, 17th ROK-USA Nanotechnology Forum, 2023/04/04 (Invited)

[4] M. J. Kim, "Inorganic-Graded Highly Reliable Organic Non-Volatile Memory Device Using iCVD Process", 2023, Nano Convergence Conference, 2023/01/26 (Invited)

[3] E. J. Shin, S. W. Shin, S. H. Lee, T. I. Lee,  M. J. Kim, H. J. Ahn, W. S. Hwang, J. Lee and B. J. Cho*, “Capacitance Boosting by Anti-Ferroelectric Blocking Layer in Charge Trap Flash Memory Device”, 2020 IEDM, Virtual meeting, 2020/12/14  (with SAMSUNG)

[2] M. J. Kim, K. Pak, W. S. Hwang, S. G. Im and B. J. Cho*, “Vapor-Phase Synthesis of Organic-Inorganic Hybrid Gate Dielectric for Flexible Electronics”, 2019 MRS Spring Meeting & Exhibit. Phoenix, Arizona, 2019/4/13 

[1] M. J. Kim, J. H. Park, D. S. Jeon, T. H. Lee, T. G. Kim*, “Various Metal-Doped ITO as Transparent Conductive Electrode for Near-Ultraviolet Light Emitting Diodes”, 2015 11th Conference on Laser and Electro-Optics Pacific Rim, Busan, Korea, 2015/08/24. 

[12] 오승현, 이창현, 조성행, 김희태, 박정익, 김민주, 박영근, 정민규, 박세준, 임성갑, 조병진, “고분자 iCVD 증착 기술을 이용한 불소 도핑에 의한a-InGaZnO 박막 트랜지스터 소자 특성 향상, The 30th Korean Conference on Semiconductors, Gyeongju, Korea, Feburary 24-26. (2024) 

[11] Jun Hyup Jin, Ji In Kim, In Su Park, Ji Ho Yu, Nam Ki Hwang, and Min Ju Kim, “유기물 기반 비휘발성 전하 포획형 메모리 두께 증가에 따른 전기적 특성에 관한 연구”, The 30th Korean Conference on Semiconductors, Gyeongju, Korea, Feburary 24-26. (2024) 

[10] Ji In Kim, Jun Hyup Jin, In Su Park, Nam Ki Hwang, Ji Ho Yu, Tae Hoon Kim, and Min Ju Kim “Ultra-Thin Hybrid Films-Based Resistive Random-Access Memory Behaviors According to Inorganic Concentration Changes”, The 30th Korean Conference on Semiconductors, Gyeongju, Korea, Feburary 24-26. (2024) 

[9] Junhyup Jin, Ji In Kim, In Su Park, Min Ju Kim, “유기물 기반 비휘발성 전하 포획형 메모리의 발전 방향성” The 30th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 13-15. (2023) 

[8] Ji In Kim, Junhyup Jin, In Su Park, Min Ju Kim, “이종 메커니즘 기반의 Hybrid-ReRAM의 발전 가능성과 방향성” The 30th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 13-15. (2023) 

[7] T. I. Lee, M. C. Nguyen, M. J. Kim, H. J. Ahn, E. J. Shin, S. H. Lee, S. W. Shin, W. S. Hwang, H. Y. Yu, and B. J. Cho, "Superior Carrier Mobility of Ge MOSFETs Depending on Channel Orientation with EOT of 0.57 nm Using Y-ZrO2/GeOx/Ge Stack", The 27th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 12-14. (2020) 

[6] S. W. Shin, E. J. Shin, S. H. Lee, T. I. Lee, M. J. Kim, H. J. Ahn, W. S. Hwang, and B. J. Cho*, "Enhancement of Program window and Operation Efficiency in Charge Trap Memory Using Anti-ferroelectric HfZrO2", The 27th Korean Conference on Semiconductors, Kangwondo, Korea, Feburary 12-14. (2020). 

[5] T. I. Lee, M. J. Kim, H. J. Ahn, E. J. Shin, S. H. Lee, S. W. Shin, W. S. Hwang, H. Y. Yu, and B. J. Cho*, “Y 도핑된 ZrO2 고유전율 박막을 이용한 0.67 nm의 EOT와 매우 낮은 누설 전류를 가지는 Ge 기반 게이트 구조”, The 26th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, (2019). 

[4] M. J. Kim, K. Pak, T. I. Lee, S. G. Im and B. J.  Cho, "기상합성 고유전율 하이브리드 절연막", The 26th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, (2019). 

[3] K. Pak, M. J. Kim, B. J. Cho and S. G. Im,  “Novel Vapor-phase Synthesis of Homogeneous Organic-Inorganic Hybrid films and its Application to electronic devices”, The 2018 Korean Conference on Chemical Engineering, Daegu, Oct. 24-26, Korea (2018) 

[2] T. I. Lee, M. J. Kim, M. C. Nguyen, H. J. Ahn, J. Moon, T. Y. Lee, H. Y. Yu, R. Choi, W. S. Hwang, and B. J. Cho*, “Ge 기반의 소자에서 Y-ZrO2 게이트 유전체를 이용한 EOT 스케일링(~5.7 A) 및 누설 전류와 계면 트랩의 감소”, The 25th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 5-7, 2018. 

[1] M. J. Kim, K. Pak, T. I. Lee, S. G. Im and B. J.  Cho, “기상 증착 기반 유연 전자 소자용 유-무기 절연막”, The 25th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 5-7 (2018) - oral