Journal

[27] J. Kim, N. Hwang, S. Hong,  M. J. Kim* and J. K. Park*, "Facilitating 3D Multi-Chip Integration through Low-Temperature Polymer-to-Polymer Bonding ", ACS Applied Electronic Materials, 6 (5), 3915-3924 (2024)

[26] J. Oh, S. Park, S. H. Lee, S. Kim, H. Lee, C. Lee, W. Hong, J.-H. Cha, M. Kang, S. G. Im,  M. J. Kim* and S. Y. Choi* "Ultrathin All Solid-State MoS2-based Electrolyte Gated Synaptic Transistor with Tunable Organic-Inorganic Hybrid Film ", Advanced Science, 2308847 (2024)

[25] Y. Park, J. Jeong, S. Noh, H. Kim, S. Kim, G Lee,  M. J. Kim and B. J. Cho "Application of Pulsed Green Laser Annealing to Top-tier MOSFET fabrication for Monolithic 3D Integration", IEEE Transactions on Electron Devices, 71 (1), 890-895 (2024)

[24] J. H. Jin and M. J. Kim* "A Study on Memory Characteristics of Hybrid-based Charge Trap-Type Organic Non-Volatile Memory Device According to Gate Stack Thickness", Microelectronics Reliability, 151, 115274 (2023)

[23] A. Martinez, B. J. Cho* and M. J. Kim* "Non-Invasive Approach to the Resistive Switching Physical Model of Ultra-Thin Organic-Inorganic Dielectric-based ReRAM", Nanoscale, 15, 18794-18805 (2023)

[22] J. Choi†, M. J. Kim†, J.-Y. Kim†, E. K. Lee, C. Lee, T. I. Lee, J. Kang, H. Park, J.-I. Park*, B. J. Cho* and S. G. Im* "The Effect of Alkyl Chain Length in Organic Semiconductors and Surface Polarity of Polymer Dielectrics in Organic Thin-Film Transistors (OTFTs)", Small Methods, 7 (11), 2370058 (2023) with SAIT (Front Cover)

[21] K. Kim, H. Kim, S.-W. Lee, M. Y. Lee, G. Lee, Y. Park, H. Ktm, Y. H. Lee, M. Kim, K. Y. Ma, M. J. Kim, T.-S. Kim, H. S. Shin and B. J. Cho "Ultralow-k Amorphous Boron Nitride Film for Copper Interconnect Capping Layer", IEEE Transaction on Electron Devices, 70 (5), 2588-2593, (2023)

[20] G. Lee, J. Oh, E. J. Shin, S. Kim, Y. Park, M. J. Kim, S. Choi, B. J. Cho "A Novel Structured Single Device Neuron for Low Standby Power and Compact System Application ", IEEE Electron Device Letters, 44 (3), 528-531, (2023)

[19] K. Jeong, M. J. Kwak, Y. Kim, Y. Lee, H. Mun, M. J. Kim, B. J. Cho, S. Choi, and S. G. Im "Vapor-Phase Synthesis of a Reagent-free Self-Healing Polymer Film with Rapid Recovery of Toughness at Ambient in Room Temperature", Soft Matter, (2022)

[18] T. I. Lee, M. J. Kim, E. J. Shin, G. Lee, J. Jeong, Y. H. Lee, J. H. Lee, J. Lee, B. J. Cho, "Grain Size Engineering using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory", IEEE Transactions on Electron Device, 69 (10), 5940-5943, (2022), with SAMSUNG ELECTRONICS

[17] M. J. Kim, A. Martinez, J. Jeong, S. Kim, W. S. Hwang, B. J. Cho, “Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra-Thin Films”, Advanced Electronic Materials, 2200432, (2022)

[16] T. I. Lee, M. J. Kim, E. J. Shin, G. Lee, J. Jeong, Y. H. Lee, J. H. Lee, J. Lee, B. J. Cho, "Channel Mobility Boosting in a Poly-Si Channel Using Ge Diffusion Engineering and Hydrogen Plasma Treatment ", IEEE Electron Device Letters, 43 (3), 342-345, (2022) with SAMSUNG ELECTRONICS

[15] Y. Yoon, M. J. Kim, B. J. Cho, W. S. Hwang, M. Shin, “An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally-off” operation”, Applied Physics Letters, 119 (12), 122103, (2021)

[14] J. Jeong, M. J. Kim, W. S. Hwang, B. J. Cho, “Copolymer-Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process”, Advanced Electronic Materials, 7(10), 2100375, (2021).  (Journal Cover)

[13] M. J. Kim, C. Lee, E. J. Shin, T. I. Lee, S. Kim, J. Jeong, J. Choi, W. S. Hwang, S. G. Im, and B. J. Cho, “Highly Reliable Charge Trap-Type Organic Non-Volatile Memory Device Using Advanced Band-Engineered Organic-Inorganic Hybrid Dielectric Stacks” Advanced Functional Materials, 31 (41), 2103291, (2021). 

[12] M. J. Kim, T. I. Lee, C. Lee, E. J. Shin, S. Kim, J. Jeong, W. S. Hwang, S. G. Im, and B. J. Cho, “Performance Enhancement of p-type Organic Thin-Film Transistors by Surface Modification of Hybrid Dielectrics” Organic Electronics, 96, 106250, (2021). 

[11] M. J. Kim, C. Lee, J. Jeong, S. Kim, T. I. Lee, E. J. Shin, W. S. Hwang, S. G. Im*, and B. J. Cho*, “Hf- and Ti-based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices” Advanced Electronic Materials, 7 (4), 2001197, (2021). 

[10] M. J. Kim, J. Jeong, T. I. Lee, J. Kim, Y. Tak, H. Park, S. G. Im and B. J. Cho, “Large-Area, Conformal, Uniform Synthesis of Hybrid Polymeric Films via Initiated Chemical Vapor Deposition”, Macromolecular Materials and Engineering, 306 (3), 2000608, (2021). (Journal Cover) 

[9] S. Kim, S. H. Lee, M. J. Kim, W. S. Hwang, H. S. Jin, and B. J. Cho, “Method to Achieve a Morphotropic Phase Boundary of HfxZr1-xO2 by Electric Field Cycling for DRAM cell Capacitor Applications” IEEE Electron Device Letters, 42 (4), 517-520, (2021). with SK Hynix

[8] C. Lee†, K. Pak†, J. Choi, M. J. Kim, B. J. Cho, and Sung Gap Im*, "Long-term Retention of Low-power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Tri-layered Dielectric Containing Charge Trapping Functionality", Advanced Functional Materials, 30 (43), 2004665, (2020). 

[7] S. J. Lee, M. J. Kim, T. Y. Lee, T. I. Lee, J. H. Bong, S. W. Shin, S. H. Kim, W. S. Hwang and B. J. Cho, “Effect of ZrO2 interfacial layer on forming ferroelectric HfxZryOz on Si substrate”, AIP Advances, 9 (12), 125020 (2019). 

[6] M. J. Kim†, K. Pak†, J. Choi, T. I. Lee, W. S. Hwang, S. G. Im* and B. J. Cho*, “Ultrathin ZrOx-Organic Hybrid Dielectric (EOT 3.2 nm) via Initiated Chemical Vapor Deposition for High-Performance Flexible Electronics”, ACS Applied Materials & Interfaces, 11 (47), 44513-44520 (2019). 

[5] J. Choi, J. Yoon, M. J. Kim, K. Pak, C.  Lee, H. Lee, K. Jeong, K. Ihm, S. Yoo, B. J. Cho, H. Lee and S. G. Im*, “Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely, Stable Organic Thin-Film Transistor Operation”, ACS Applied Materials & Interfaces, 11 (32), 29113-29123 (2019). 

[4] T. I. Lee, M. C. Nguyen, H. J. Ahn, M. J. Kim, E. J. Shin, W. S. Hwang, H. Y. Yu, R. Choi and B. J. Cho*, “H2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric with an EOT of 0.57 nm for Ge MOSFETs”, IEEE Electron Device Letters, 40 (9), 1350-1353 (2019). 

[3] T. I. Lee, H. J. Ahn, M. J. Kim, E. J. Shin, S. H. Lee, S. W. Shin, W. S. Hwang, H. Y. Yu and B. J. Cho*, “Ultrathin (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 with Record-Low Leakage Current”, IEEE Electron Device Letters, 40 (4), 502-505 (2019). 

[2] M. J. Kim†, K. Pak†, W. S. Hwang, S. G. Im* and B. J. Cho*, “Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness”, ACS Applied Materials & Interfaces, 10 (43), 37326-37334 (2018). (Journal cover)