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Compact charge model for cylindrical gate-all-around MOSFETs considering the density-gradient equation [DC31]
Compact charge model for cylindrical gate-all-around MOSFETs considering the density-gradient equation [DC31]
양자 구속 효과를 고려하기 위해서, 소자 시뮬레이션에 density-gradient equation이 포함되어야 한다. 이전 연구에서, Poisson equation과 density-gradient equation을 결합하여 양자 구속 효과를 포함하는 double-gate MOSFET에 대한 compact charge model을 개발하였다. 비슷한 방법으로 cylindrical gate-all-around MOSFET에 대한 compact charge model을 개발하였다. Charge-voltage characteristics을 계산하기 위해서 quantum correction과 관련된 항들의 모델링이 수행되었다.
Current model for cylindrical gate-all-around MOSFETs considering the density-gradient equation [DC35]
Current model for cylindrical gate-all-around MOSFETs considering the density-gradient equation [DC35]
완성된 compact charge model을 가지고 terminal current model를 완성하였다. 먼저 long channel에 대한 current model을 유도하였고, short channel effect와 channel length modulation을 고려할 수 있는 방법들을 도입하였다. 추가로 mobility에 대한 모델 도입을 생각하고 있다.
Universal charge model for multi-gate MOS structures with arbitrary cross-sections [IJ41]
Universal charge model for multi-gate MOS structures with arbitrary cross-sections [IJ41]
A universal charge model for multi-gate MOS structure with an arbitrary cross-section is presented. In this work, we propose a generalized coordinate. The Poisson equation is integrated with a weighting factor, which is related with the generalized coordinate and the electric field. Through this procedure, a compact charge model is derived.
Generalized coordinate for rectangular nanosheet MOS structures
Results for square GAA MOS structure.
Results for rectangular GAA MOS structure.
Acceleration of semiconductor device simulation using compact charge model [IC74]
Acceleration of semiconductor device simulation using compact charge model [IC74]
In this work, we propose a method to get an initial guess for the semiconductor device simulation with a compact charge model. The compact charge model for a 2D MOS structure is numerically solved with the 1D continuity equation. The solution of two coupled equations is used to generate the initial electrostatic potential and the initial electron density. By using the obtained initial guess, we can perform the device simulation directly at the target bias condition without a time-consuming bias ramping process.
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