International

Preprint

• [PreIC6] Kwang-Woon Lee and Sung-Min Hong, "...," to be submitted.

• [PreIC5] Min-Seo Jang and Sung-Min Hong, "Process simulation of GAA nanosheet pFET considering stress," to be submitted.

• [PreIC4] Sung-Min Hong, "Compact representation of electrostatic potential profiles in semiconductor devices," to be submitted.

• [PreIC3] Jae Uk Ryu and Sung-Min Hong, "Optimization of Ga2O3 MOSFET through rapid calculation of breakdown voltage," to be submitted.

• [PreIC2] Seungwoo Jung, In Ki Kim, Kwang-Woon Lee,  and Sung-Min Hong, "Simulation of monolithic CFET with split-gate structure," submitted.

• [PreIC1] Phil-Hun Ahn and Sung-Min Hong, "Self-consistent AC quantum transport simulation including electron-phonon scattering," submitted.

2024

• [IC86] Sung-Min Hong, "Extension of simulation capabilities of advanced transport solvers," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor (AWAD), 2024. (Invited)

• [IC85] Sang-Mok Jeong and Sung-Min Hong, "Predicting the retention property of scaled cylindrical IGZO 2T0C DRAM cells," Silicon Nanoelectronics Workshop (SNW), 2024. 

2023

• [IC84] Phil-Hun Ahn and Sung-Min Hong, "Geometric scattering describing mode-coupling effects in non-uniform cross-sections for non-equilibrium Green's function and multi subband Boltzmann transport equation solvers," International Electron Devices Meeting (IEDM), 2023.

• [IC83] In Ki Kim, Seung-Cheol Han, Geonho Park, Geon-Tae Jang, and Sung-Min Hong, "Effect of Si separator in Forksheet FETs on device characteristics investigated by using in-house TCAD process emulator and device simulator ," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023.

• [IC82] In Ki Kim and Sung-Min Hong, "3D multi-level-set simulation of bottom dielectric isolation process for forksheet FETs," International Workshop on Computational Nanotechnology (IWCN), 2023.

• [IC81] Geonho Park and Sung-Min Hong, "Efficient method to obtain target bias solutions of 6F2 DRAM cells with geometric fluctuations," International Workshop on Computational Nanotechnology (IWCN), 2023.

• [IC80] Seung-Cheol Han, In Ki Kim, and Sung-Min Hong*, "Accelerated simulation and performance optimization of 3D multigate logic transistors by using neural networks," IEEE Electron Devices Technology and Manufacturing (EDTM), 2023.

2022

• [IC79] Pyeunghwi Choi, Yongpyo Kim, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, “Effect of N-type doped layer on side-illuminated photoconductive semiconductor switch,” IEEE Photonics Conference (IPC), 2022.

• [IC78] Junsung Park and Sung-Min Hong, "Electrothermal simulation of vertical β-Ga2O3 MOSFETs under switched bias conditions," International Workshop on Gallium Oxide and Related Materials (IWGO), 2022.

• [IC77] Nayan Chandra Das, Sung-Min Hong, and Jae-Hyung Jang, "Effects of the operating environment, active layer thickness and low-temperature characteristics of Ti/SiOxNy/Pt bipolar RRAM," International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), 2022.

• [IC76] Geon-Tae Jang and Sung-Min Hong, "Hybrid 2D/3D mesh for efficient device simulation of a locally tilted vertical NAND string," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.

• [IC75] Suhyeong Cha and Sung-Min Hong, "Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.

• [IC74] Kwang-Woon Lee and Sung-Min Hong, "Acceleration of semiconductor device simulation using compact charge model," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2022.

• [IC73] In Ki Kim, Suhyeong Cha, and Sung-Min Hong, "Numerical investigation of enhancement-mode β-Ga2O3 vertical MOSFETs via process and device simulations," International Workshop on Ultraviolet Materials and Devices (IWUMD), 2022. (Awarded as the best poster paper)

2021

• [IC72] Phil-Hun Ahn and Sung-Min Hong, "Quantum transport simulation with the first-order perturbation: Intrinsic AC performance of extremely scaled nanosheet MOSFETs in THz frequencies," International Electron Devices Meeting (IEDM), 2021. 

• [IC71] Seung-Cheol Han, Jonghyun Choi, and Sung-Min Hong, "Acceleration of three-dimensional device simulation with the 3D convolution neural network,"  International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021.

• [IC70] Suhyeong Cha and Sung-Min Hong, "Theoretical study for β-Ga2O3 based MODFET using coupled drift-diffusion and multi-subband Boltzmann transport equation solver," Nano Korea, 2021.

• [IC69] Sung-Min Hong, "Automated extraction and classification of region graphs for semiconductor device structure files," Nano Korea, 2021.

• [IC68] Suhyeong Cha and Sung-Min Hong, "High-field mobility modeling for gallium oxide based 2DEG channel in modulation doped heterostructure," Compound Semiconductor Week (CSW), 2021.

• [IC67] Nayan Chandra Das, Min Jae Kim, Janardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang, "Effects of the electrode materials and operating environment on magnesimum fluoride based bipolar RRAMs," Materials Challenges for Memory, 2021.

• [IC66] Minjae Kim, Nayan Chandra Das, Sung-Min Hong, and Jae-Hyung Jang, "Influence of buffer layer thickness on the performance of HfOx-based RRAM at vacuum environment," Materials Challenges for Memory, 2021.

• [IC65] In Ki  Kim and Sung-Min Hong, "Two-dimensional diffusion process simulation of Si-implanted Ga2O3," International Workshop on Computational Nanotechnology, 2021.

• [IC64] Phil-Hun Ahn and Sung-Min Hong, "Simulation of AC responses using non-equilibrium Green's function at finite frequencies," International Workshop on Computational Nanotechnology, 2021.

• [IC63] Sung-Min Hong and Kwang-Woon Lee, "TCAD-inspired compact modeling approach ," Asia/South Pacific MOS-AK Workshop, 2021.

2020

• [IC62] Nayan Chandra Das, Min Jae Kim, Janardhanan R. Rani, Sung-Min Hong, Jae-Hyung Jang, "Biodegradable magnesium difluoride based bipolar resistive switching memory devices," International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), 2020.

• [IC61] Sung-Min Hong and Phil-Hun Ahn, "AC NEGF simulation of nanosheet MOSFETs," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020.

• [IC60] Seung-Cheol Han, Jonghyun Choi, and Sung-Min Hong, "Electrostatic potential profile generator for two-dimensional semiconductor devices," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020.

• [IC59] Junsung Park, Min-Jae Kim, Jae-Hyung Jang, and Sung-Min Hong, "Properties of conductive oxygen vacancies and compact modeling of IV characteristics in HfO2 resistive random-access-memories," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020.

2019

• [IC58] Seung-Cheol Han and Sung-Min Hong, "Deep neural network for generation of the initial electrostatic potential profile," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019.

• [IC57] Suhyeong Cha and Sung-Min Hong, "Mobility calculation of the gallium oxide double-gate metal-oxide-semiconductor structure," IWGO, 2019. 

• [IC56] Pyeunghwi Choi, Yong-Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-Hyun Baek, Sung-Min Hong, Sung-Bae Lee, and Jae-Hyung Jang, "Comparison of lateral and vertical photoconductive semiconductor switches fabricated on 4H-SiC," PPPS, 2019.

• [IC55] Yong-Pyo Kim, Pyeung Hwi Choi, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "Surface passivation of GaAs photoconductive semiconductor switches with silicon resin," PPPS, 2019.

• [IC54] Sung-Min Hong, "Intrinsic RF performance of extremely scaled nanosheet transistors calculated by the small-signal non-equilibrium Green's function technique ," China Semiconductor Technology International Conference, 2019. (Invited)

2018

• [IC53] Sung-Min Hong, "Calculation of atomic energy levels by using a fully-coupled solver for the Kohn-Sham equation and the Poisson equation,"  TENCON, 2018. 

• [IC52] Suhyeong Cha and Sung-Min Hong, "A deterministic multi-subband Boltzmann transport equation sover for GaN based HEMTs", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 163-166, 2018. 

• [IC51] Junsung Park and Sung-Min Hong, "First principles investigation of Al2O3/beta-Ga2O3 interface structure", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 314-317, 2018. 

• [IC50] Junsung Park and Sung-Min Hong, "DFT-based modeling of crystalline γ-Al2O3/ß-Ga2O3 interface ", International Union of Materials Research Society – International Conference on Electronic Materials (IUMRS-ICEM), 2018.

• [IC49] Sung-Min Hong and Geon-Tae Jang, "Mobility calculation of nanosheet transistors at cryogenic temperatures: Impact of nanosheet cross-section and channel strain", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor (AWAD), 2018.

• [IC48] Young-Ki Kwon, Ji Hyung Hwang, Ha Jin Mun, Sungbae Lee, Sung-Min Hong, and Jae-Hyung Jang, "Correlation between gate leakage current and current collapse in oxygen plasma treated GaN/AlGaN/GaN-on-Si HEMTs", CSW, 2018.

2017

• [IC47] Sung-Min Hong, "Transient device simulation using deterministic Boltzmann equation solvers", Nano-Micro Conference, 2017. (Invited)

• [IC46] Geon-Tae Jang and Sung-Min Hong, "Self-consistent calculation of electron mobility in Si, Ge, and In0.53Ga0.47As inversion layers," AWAD, 2017.

• [IC45] Suhyeong Cha, Geon-Tae Jang, and Sung-Min Hong, "Phonon-limited mobility of two-dimensional electron gas in AlInGaN/GaN heterostructures," AWAD, 2017.

• [IC44] Jaehyeong Jang and Sung-Min Hong, "Drift-diffusion model coupled with Maxwell's equations and its application to high frequency semiconductor devices," AWAD, 2017.

• [IC43] Junsung Park and Sung-Min Hong, "First-principles study on electronic structure of Si/SiO2 interface - Effect of defect position," AWAD, 2017.

• [IC42] Ha Jin Mun, Ji Hyun Hwang, Young-Ki Kwon, Sung-Min Hong, and Jae-Hyung Jang, "Improved ohmic contact by pre-annealing process in quaternary In0.04Al0.65Ga0.31N/GaN HEMTs," CSW, 2017.

• [IC41] Ji Hyun Hwang, Suhyeong Cha, Young-Ki Kwon, Ha Jin Mun, Sung-Min Hong, and Jae-Hyung Jang, "Quaternary In0.04Al0.55Ga0.41N/GaN HEMTs with In0.1Ga0.9N back barrier," CSW, 2017.

2016

• [IC40] Sung-Min Hong and Suhyeong Cha, "Deterministic Boltzmann equation solver for graphene sheets including self-heating effects," International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 197-200, 2016. 

• [IC39] Sung-Min Hong, "Transient device simulation using a deterministic Boltzmann equation solver," Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), pp. 185-188, 2016. (Invited)

• [IC38] Yong-Pyo Kim, Jiheon Ryu, Sung Hyun Baek, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "Output characteristics of GaAs photoconductive semiconductor switch at high bias voltages," Compound Semiconductor Week, MoP-ISCS-025, 2016.

• [IC37] Sung-Min Hong and Jae-Hyung Jang, "Numerical simulation of Gunn oscillation in AlGaAs/InGaAs high-electron mobility transistor," EUROSOI-ULIS, pp. 250-253, 2016.

2015

• [IC36] Hyun-Woong Kim, Jungmin Woo, Sung-Min Hong, and Jae-Hyung Jang, "Silicon based active terahertz metamaterial devices," SPIE Optics+Photonics, 2015.

• [IC35] Sung-Min Hong and Jae-Hyung Jang, "Simulation and design of THz emitters based on the GaN HEMT structure," International Conference on Computational Physics, 2015.

2014

• [IC34] Sung-Min Hong and Jae-Hyung Jang, “Simulation study of terahertz detectors with ungated regions and diffusion current,” International Conference on Solid-State and Integrated Circuit Technology, pp. 1601-1603, 2014.

2013 

• [IC33] Christoph Jungemann and Sung-Min Hong, “Investigation of electronic noise in THz SiGe HBTs by microscopic simulation,” Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-8, 2013. 

• [IC32] Seonghoon Jin, Sung-Min Hong, Woosung Choi, Keun-Ho Lee, and Youngkwan Park, “Coupled drift-diffusion (DD) and multi-subband Boltzmann transport equation (MSBTE) solver for 3D multi-gate transistors,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 348-351, 2013. 

~2012 

• [IC31] Christoph Jungemann, Anh-Tuan Pham, Sung-Min Hong, and Bernd Meinerzhagen, “Deterministic simulation of 3D and quasi-2D electron and hole systems in SiGe devices,” European Solid-State Device Research Conference, pp. 318-321, 2012. 

• [IC30] Sung-Min Hong, Woosung Choi, Wonsok Lee, Young Tae Kim, Uihui Kwon, Keun-Ho Lee, and Youngkwan Park, “Mobility calculation for nanoscale multi-gate FETs with arbitrary two-dimensional cross section with a homogeneous channel including strain effects,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 360-363, 2012. 

• [IC29] B. Meinerzhagen, A. T. Pham, S.-M. Hong, and C. Jungemann, “Numerical modeling of noise and transport in SOI devices,” ECS Transactions, vol. 35, pp. 303-312, 2011. 

• [IC28] J. Bieder, S.-M. Hong, and C. Jungemann, “A deterministic Boltzmann solver for GaAs devices based on the spherical harmonics expansion,” International Workshop on Computational Electronics, 2010. 

• [IC27] C. Jungemann, S.-M. Hong, and G. Matz, “High-order spherical harmonics solution of the Boltzmann equation and noise modeling,” International Workshop on Computational Electronics, 2010. 

• [IC26] M. Al-Sa’di, V. d’Alessandro, S. Fregones, S.-M. Hong, C. Jungemann, C. Maneux, I. Marano, A. Pakfar, N. Rinaldi, G. Sasso, M. Schröter, A. Sibaja-Hernandez, C. Ravernier, and G. Wedel, “TCAD simulation and development with the European DOTFIVE project on 500GHz SiGe:C HBT’s,” European Microwave Integrated Circuits Conference, 2010 

• [IC25] Kai Zhao, Sung-Min Hong, Christoph Jungemann, and Ru-Qi Han, “Stable implementation of a deterministic multi-subband Boltzmann solver for silicon double-gate nMOSFETs,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 303-306, 2010. 

• [IC24] B. Meinerzhagen, A. T. Pham, S.-M. Hong, and C. Jungemann, “Solving Boltzmann transport equation without Monte-Carlo Algorithms – New methods for industrial TCAD applications,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 293-296, 2010. 

• [IC23] Gregor Matz, Sung-Min Hong, and Christoph Jungemann, “Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 167-170, 2010. 

• [IC22] Sung-Min Hong and Christoph Jungemann, “Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 135-138, 2010. 

• [IC21] S.-M. Hong and C. Jungemann, “Electron transport in extremely scaled SiGe HBTs,” Bipolar/BiCMOS Circuits and Technology Meeting, pp. 67-74, 2009. 

• [IC20] Sung-Min Hong and Christoph Jungemann, “Investigation of noise performance of double-gate MOSFETs by deterministic simulation of Boltzmann equation,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 103-106, 2009. 

• [IC19] Chan Hyeong Park and Sung-Min Hong, “Analytical frequency-dependent formulas of excess noise in homogeneous semiconductors,” International Conference on Noise and Fluctuations, pp. 589-592, 2009. 

• [IC18] Sung-Min Hong and Christoph Jungemann, “Investigation of noise performance of SiGe HBTs by deterministic simulation of Boltzmann equation in two-dimensional real space,” International Conference on Noise and Fluctuations, pp. 573-576, 2009. 

• [IC17] Sung-Min Hong and Christoph Jungemann, “Oscillator noise analysis: Full spectrum evaluation including orbital deviations,” International Conference on Noise and Fluctuations, pp. 501-504, 2009. 

• [IC16] Sung-Min Hong and Christoph Jungemann, “Simulation of magnetotransport in nanoscale devices,” International Conference on Solid-State and Integrated-Circuit Technology, pp. 377-380, 2008. 

• [IC15] Sung-Min Hong and Christoph Jungemann, “Deterministic simulation of SiGe HBTs based on the Boltzmann equation,” European Solid-State Device Research Conference, pp. 170-173, 2008. 

• [IC14] Sung-Min Hong, Christoph Jungemann, and Matthias Bollhöfer, “A deterministic Boltzmann equation solver for 2D semiconductor devices,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 293-296, 2008. 

• [IC13] Jun-Myung Woo, Hong-Hyun Park, Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Statistical analysis of random telegraph noise in CMOS image sensors,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 77-80, 2008. 

• [IC12] Chang-Ki Baek, Seong Wook Choi, Hong-Hyun Park, Jun-Myung Woo, Sung-Min Hong, Chan Hyeong Park, and Young June Park, “A unified approach for the reliability modeling of MOSFETs,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 61-64, 2008. 

• [IC11] Hong-Hyun Park, Sung-Min Hong, Seonghoon Jin, Hong Shick Min, and Young June Park, “Noise simulation in nanoscale devices based on the non-equilibrium Green’s function formalism,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 445-448, 2007. 

• [IC10] Andrey Yu. Serov, Sung-Min Hong, Young June Park, and Hong Shick Min, “Surface-potential based compact model for quantum effects in planar and double-gate MOSFET,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 297-300, 2007. 

• [IC9] Sung-Min Hong, Hong-Hyun Park, Chan Hyeong Park, Myoung Jin Lee, Hong Shick Min, and Young June Park, “Physics-based simulation of 1/f noise in MOSFETs under large-signal operation,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 89-92, 2007. 

• [IC8] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, and Hong Shick Min, “Reliability studies on non planar DRAM cell transistor,” International Reliability Physics Symposium, 2007. 

• [IC7] Sung-Min Hong, Chan Hyeong Park, Myoung Jin Lee, Hong Shick Min, and YoungJune Park, “Physics-based phase noise analysis of CMOS RF oscillators,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 95-98, 2006. 

• [IC6] Sung-min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations of the Green’s functions for the short-circuit terminal noise currents in semiconductor devices,” International Conference on Noise and Fluctuations, pp. 787-790, 2005. 

• [IC5] Sung-Min Hong, Raseong Kim, Chan Hyeong Park, Hong Shick Min, and Young-June Park, “A physics-based TCAD framework for the noise analysis of RF CMOS circuits under the large-signal operation,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 119-122, 2005. 

• [IC4] Seonghoon Jin, Sung-min Hong, Jongchol Kim, Young June Park, and Hong Shick Min, “Nonlocal transport and thermal noise of the nano scale MOSFET,” Noise in Devices and Circuits, pp. 74-83, 2004. 

• [IC3] Sung-min Hong, Hong Shick Min, Chan Hyeong Park, and Young June Park, “Extension of the characteristic potential method for noise calculation and its application to shot noise in semiconductor devices,” Noise in Devices and Circuits, pp. 16-27, 2004. 

• [IC2] Hyunchul Nah, Sung-min Hong, Young June Park, and Hong Shick Min, “The physical and numerical implications of the noise modeling method: IFM, CPM, and ERS,” International Conference on Simulation of Semiconductor Processes and Devices, pp. 75-78, 2003. 

• [IC1] Sung-min Hong, Yong-seok Kim, Hong Shick Min, and Young June Park, “Characteristic potential method of noise calculation in semiconductor devices: calculation of 1/f noise in MOS transistors in the ohmic region,” Noise in Devices and Circuits, pp. 267-281, 2003.

Domestic

Preprint

2024

• [DC57] Jae Uk Ryu and Sung-Min Hong, "Optimization of beta-Ga2O3 vertical MOSFETs using particle swarm optimization," 제7회 산화갈륨기술연구회 전문워크숍, 2024. 

• [DC56] Phil-Hun Ahn and Sung-Min Hong, "Transport simulation for nanosheet FET with extended source and drain regions," Korean Conference on Semiconductor, 2024. 

• [DC55] Geon-Tae Jang and Sung-Min Hong, "Simulation study on the electrical characteristics of 3D NAND string with a locally deformed memory cell," Korean Conference on Semiconductor, 2024. 

• [DC54] In Ki Kim and Sung-Min Hong, "Numerical simulation ob bottom dielectric isolated (BDI) forksheet field effect transistor (FSFET) with in-house TCAD process emulator and device simulator," Korean Conference on Semiconductor, 2024. 

• [DC53] Seung-Woo Jung, In Ki Kim, Kwang-Woon Lee, and Sung-Min Hong, "Simulation of monolithic CFET using in-house TCAD process emulator," Korean Conference on Semiconductor, 2024. 

• [DC52] Sang-Mok Jeong and Sung-Min Hong, "Computational device design of cylindrical IGZO 2T0C DRAM cell," Korean Conference on Semiconductor, 2024. 

• [DC51] Kwang-Woon Lee and Sung-Min Hong, "Accelerated device simulation of gate-all-around nanosheet MOSFETs using quasi-1D model," Korean Conference on Semiconductor, 2024. 

2023

• [DC50] Sung-Min Hong, "Efficient calculation of breakdown voltage in gallium oxide semiconductor devices," 제6회 산화갈륨기술연구회 전문워크숍, 2023.

• [DC49] Sung-Min Hong, "Recent research trends for acceleration of semiconductor device simulation," Korea Supercomputing Conference, 2023.

• [DC48] Geonho Park and Sung-Min Hong, "Statistical distribution of DRAM retention time due to geometric fluctuation," Korean Conference on Semiconductor, 2023.

• [DC47] Sang-Mok Jeong and Sung-Min Hong, "Development of in-house device simulator for NAND flash memories," Korean Conference on Semiconductor, 2023.

• [DC46] Seong-Min Han, Kwang-Woon Lee, and Sung-Min Hong, "Development of in-house compact model for multigate MOSFETs using the Verilog-A," Korean Conference on Semiconductor, 2023.

2022

• [DC45] In Ki Kim, Suhyeong Cha, and Sung-Min Hong, "Optimization of enhancement-mode β-Ga2O3 vertical MOSFETs via G-Process and G-Device," 제5회 산화갈륨기술연구회 전문워크숍, 2022.

• [DC44] Phil-Hun Ahn and Sung-Min Hong, "Quantum transport simulation of nanosheet FETs with various cross-sections including electron-phonon scattering," Korean Conference on Semiconductor, 2022.

• [DC43] Jeong-Hyeon Do and Sung-Min Hong, "Accurate implementation of the Bernoulli function for the Scharfetter-Gummel scheme," Korean Conference on Semiconductor, 2022. 

• [DC42] In Ki Kim and Sung-Min Hong, "Three-dimensional topology simulation of vertically stacked complementary field effect transistor (CFET) with 5 nm channel width," Korean Conference on Semiconductor, 2022. 

2021

• [DC41] Sung-Min Hong, "Recent progress of G-Process and G-Device for gallium oxide based devices," 제4회 산화갈륨기술연구회 전문워크숍, 2021. 

• [DC40] Seung-Cheol Han and Sung-Min Hong, "Learning to generate an approximate electrostatic potential profile of a MOSFET with an unstructured mesh," Korean Conference on Semiconductor, 2021. 

• [DC39] Minjae Kim, Jae-Hyung Jang, and Sung-Min Hong, "Implementation of three-dimensional kinetic Monte Carlo simulator for HfO2 resistive random-access-memories," Korean Conference on Semiconductor, 2021. 

• [DC38] Suhyeong Cha and Sung-Min Hong, "High-field transport properties of (AlxGa1-x)2O3/Ga2O3 based modulation doped heterostructures," Korean Conference on Semiconductor, 2021. 

• [DC37] Phil-Hun Ahn and Sung-Min Hong, "Non-equilibrium Green's function simulation of nanosheet MOSFETs with various cross-sections," Korean Conference on Semiconductor, 2021. 

• [DC36] Junsung Park and Sung-Min Hong, "Multi source/drain CMOS implementation for energy-efficient neural network device," Korean Conference on Semiconductor, 2021.  

• [DC35] Kwang-Woon Lee and Sung-Min Hong, "Compact model of cylindrical gate-all-around MOSFETs based on the density-gradient equation," Korean Conference on Semiconductor, 2021. 

2020

• [DC34] Sung-Min Hong, "반도체 소자 시뮬레이터의 구성 요소들," Korea Supercomputing Conference, 2020.

• [DC33] Sung-Min Hong, "Simulation of gallium oxide based devices using in-house semiconductor device simulator, G-Device," 제3회 산화갈륨기술연구회 전문워크숍, 2020.

• [DC32] Seung-Cheol Han and Sung-Min Hong, "Prediction of the electrostatic potential profile of a semiconductor device as non-equilibrium by using deep neural networks," Korean Conference on Semiconductor, 2020.

• [DC31] Kwang-Woon Lee and Sung-Min Hong, "Compact charge model for cylindrical gate-all-around MOSFETs considering the density-gradient equation," Korean Conference on Semiconductor, 2020.

• [DC30] Suhyeong Cha and Sung-Min Hong,  "Study of gallium based devices using multi-subband Boltzmann transport equation solver," Korean Conference on Semiconductor, 2020.

• [DC29] Junsung Park and Sung-Min Hong, "Modeling of the conductive oxygen vacancies in the HfO2 supercell based on the first principles calculation," Korean Conference on Semiconductor, 2020.

2019

• [DC28] Suhyeong Cha and Sung-Min Hong, "Mobility calculation for two-dimensional electron gas in gallium oxide based device," 한국전기전자재료학회 하계학술대회, 2019.

• [DC27] Junsung Park, Suhyeong Cha, and Sung-Min Hong, "Simulation study on gallium oxide metal-oxide-semiconductor devices," 제2회 산화갈륨기술연구회 전문워크숍, 2019.

• [DC26] Geon-Tae Jang and Sung-Min Hong, "Effect of low temperature on the electron mobility enhancement of strained-Si nanowire transistors," Korean Conference on Semiconductor, 2019. 

• [DC25] Sung-Min Hong, "Virtual reality visualization tool for semiconductor devices," Korean Conference on Semiconductor, 2019. 

2018

• [DC24] Seonghyun Kim and Sung-Min Hong, "Development of a virtual reality visualization tool for atomic structures ," KPS Fall Meeting, 2018.  

• [DC23] Sung-Min Hong and Suhyeong Cha,  "Development of microscopic device simulation tools for high frequency applications," 제2회 한국LED광전자학회 학술대회, 2018. (Invited) 

• [DC22] Jaehyeong Jang and Sung-Min Hong, "A frequency domain solver for Maxwell's equations and drift-diffusion model," Korean Conference on Semiconductor, 2018. 

• [DC21] Geon-Tae Jang and Sung-Min Hong, "An efficient method for subband calculation of nanowire transistors using a coordinate transformation," Korean Conference on Semiconductor, 2018. 

• [DC20] Junsung Park and Sung-Min Hong, "First principles approach to analyze defect-induced multiphonon transition at the Si-SiO2 interface," Korean Conference on Semiconductor, 2018.  (Awarded as the best paper)

• [DC19] Suhyeong Cha and Sung-Min Hong, "Mobility calculation for GaN based heterostructure: Effects of variational wave function and screening," Korean Conference on Semiconductor, 2018.  

2017

• [DC18] Suhyeong Cha, Ji Hyung Hwang, Jae-Hyung Jang, and Sung-Min Hong, "Simulation of DC/RF characteristics of AlInGaN/GaN HEMTs," Korean Conference on Semiconductors, 2017. 

• [DC17] Junsung Park and Sung-Min Hong, "Simulation of steady-state and small-signal characteristics of multi source-drain MOSFET," Korean Conference on Semiconductors, 2017.

2016

• [DC16] Sung-Min Hong, "Transient simulation using a deterministic Boltzmann equation solver," KPS Fall Meeting, 2016. (Invited)

• [DC15] Cho Hee Lee, Junsung Park, Jae-Hyung Jang, and Sung-Min Hong, "Fabrication and modeling of photoconductive switch based on p-i-n structure," Korean Conference on Semiconductors, 2016.

• [DC14] Junsung Park and Sung-Min Hong, "Influence of cross section geometry and channel orientation on electron subband energy in elliptical silicon nanowires," Korean Conference on Semiconductors, 2016. 

• [DC13] Junsung Park and Sung-Min Hong, "Mapping of gate-all-around MOSFETs to double-gate MOSFETs," Korean Conference on Semiconductors, 2016.

2015

• [DC12] Sung-Min Hong and Jae-Hyung Jang, "Large-signal simulation of plasma instability in 2-dimensional electron gas," Korean Conference on Semiconductors, 2015. 

• [DC11] Cho Hee Lee, Ji Hyung Hwang, Jae-Hyung Jang, and Sung-Min Hong, "Amplification of electromagnetic waves in InAlN/AlN/GaN grating structures," Korean Conference on Semiconductors, 2015.

2014 

• [DC10] Sung-Min Hong, "Recent advances in deterministic solvers for the Boltzmann transport equation and future research directions," Korean Conference on Semiconductors, p. 30, 2014. (Invited) 

• [DC9] Sung-Min Hong, Jae-Hyung Jang, and Kyung Rok Kim, "Investigation of the THz resonant oscillation in HEMTs by solving the pseudo-2D Poisson equation and the 1D transport equation," Korean Conference on Semiconductors, pp. 74-77, 2014. 

~2012 

• [DC8] Jun-Myung Woo, Hong-Hyun Park, Sung-Min Hong, Hong Shick Min and Young June Park, “Statistical analysis of dark random noise in CMOS image sensors based on the Green’s function approach,” Korean Conference on Semiconductors, 2009. 

• [DC7] Sung-Min Hong, Jun-Myung Woo, Hong-Hyun Park, Young-June Park and Hong-Shick Min, “Oxide-trapping model for physics-based 1/f noise analysis in MOSFETs,” Korean Conference on Semiconductors, 2008. 

• [DC6] Hong-Hyun Park, Sung-Min Hong, Seonghoon Jin, Young June Park, and Hong Shick Min, “Noise simulation of mesoscopic device based on the non-equilibrium Green’s function formalism,” Korean Conference on Semiconductors, 2008. 

• [DC5] Chan Hyeong Park, Sung-Min Hong, Hong Shick Min, and Young June Park, “Shot noise in homogeneous semiconductors,” Korean Conference on Semiconductors, pp. 623-624, 2008. 

• [DC4] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong-Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, and Hong Shick Min, “Reliability studies on non planar DRAM cell transistor,” Korean Conference on Semiconductors, pp. 1005-1007, 2007. 

• [DC3] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young-June Park, “A physics-based phase noise analysis of CMOS RF oscillators,” Korean Conference on Semiconductors, pp. 821-822, 2006. 

• [DC2] Raseong Kim, Sung-min Hong, Chan Hyeong Park, Young-June Park, and Hong Shick Min, “A comprehensive quasi-2D model for harmonic balance analysis of MOSFET,” Korean Conference on Semiconductors, pp. 333-334, 2005. 

• [DC1] Sung-min Hong, Hyunchul Nah, Seonghoon Jin, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations for the short-circuit current Green’s functions in semiconductor devices,” Korean Conference on Semiconductors, pp. 7-8, 2004.