International

Preprint

• [PreIJ6] Sung-Min Hong* and Kwang-Woon Lee, "... Part II," to be submitted.

• [PreIJ5] Sung-Min Hong* and Kwang-Woon Lee, "... Part I," to be submitted.

• [PreIJ4] In Ki Kim, Seungwoo Jung, and Sung-Min Hong, "Area-efficient 3P3N SRAM cell structure for CFET era," to be submitted. 

• [PreIJ3] Geon-Tae Jang and Sung-Min Hong*, "Theoretical investigation of the electrical behavior in a locally deformed 3-D NAND flash memory string," to be submitted. 

• [PreIJ2] Phil-Hun Ahn and Sung-Min Hong*, "Nonequilibrium ac quantum transport in nanoscaled FET at terahertz frequency range," under revision. 

• [PreIJ1] Kwang-Woon Lee and Sung-Min Hong*, "Compact charge model for gate-all-around nanosheet MOS structures considering the density-gradient equation," under revision.

2023

• [IJ53] Gyejung Lee,  Byungwoo Son, Do-Kyeong Ko, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "High efficiency interdigitated terahertz photoconductive antenna integrated with cylindrical lens array," IEEE Transactions on Terahertz Science and Technology, vol. 13, pp. 671-677, 2023.

• [IJ52] Pyeung Hwi Choi, Yong Pyo Kim, Suhyun Park, Sung-Min Hong, Sungbae Lee, Hohjai Lee, and Jae-Hyung Jang, "High-temperature annealing of high purity semi-insulating 4H-SiC and its effect on the performance of a photoconductive semiconductor switch," IEEE Electron Device Letters, vol. 44, pp. 1168-1171, 2023.

• [IJ51] Nayan C. Das, Yong-Pyo Kim, Sung-Min Hong, and Jae-Hyung Jang, "Effects of top and bottom electrodes materials and operating ambiance on the characteristics of MgFx based bipolar RRAMs," Nanomaterials, vol. 13, p. 1227, 2023.

• [IJ50] Gyejung Lee, Byungwoo Son, Do-Kyeong Ko, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "Plasmonic grating assisted photo-absorption enhancement in THz photoconductive antenna ," Microwave and Optical Technology Letters, vol. 65, pp. 887-891, 2023.  

• [IJ49] Phil-Hun Ahn and Sung-Min Hong*, "A fully coupled scheme for a self-consistent Poisson-NEGF solver," IEEE Transactions on Electron Devices, vol. 70, pp. 239-246, 2023.  

• [IJ48] Geon-Tae Jang and Sung-Min Hong*, "Hybrid 2D/3D mesh for efficient device simulation of locally deformed cylindrical semiconductor devices," Solid-State Electronics, vol. 200, p. 108522, 2023.  

• [IJ47] Kwang-Woon Lee and Sung-Min Hong*, "Acceleration of semiconductor device simulation using compact charge model," Solid-State Electronics, vol. 199, p. 108526, 2023.

2022

• [IJ46] In Ki Kim, Suhyeong Cha, and Sung-Min Hong*, "Optimization of nitrogen ion implantation condition for β-Ga2O3 vertical MOSFETs via process and device simulation," IEEE Transactions on Electron Devices, vol. 69, pp. 6948-6955, 2022.

• [IJ45] Pyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "Output  characteristics of side-illuminated photoconductive semiconductor switch based on high purity semi-insulating 4H-SiC," IEEE Access, vol. 10, pp. 109558-109564, 2022.

• [IJ44] Suhyeong Cha and Sung-Min Hong*, "Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion," Solid-State Electronics, vol. 198, p. 108457, 2022. 

• [IJ43] Suhyeong Cha and Sung-Min Hong*, "Study of β-Ga2O3 based thin-channel MODFET devices using a coupled drift-diffusion/multisubband BTE solver," IEEE Transactions on Electron Devices, vol. 69, pp. 4870-4876, 2022.

• [IJ42] Nayan C. Das, Minjae Kim, Sung-Min Hong, and Jae-Hyung Jang, "Vacuum and low temperature characteristics of silicon oxynitride based bipolar RRAM," Micromachines, vol. 13, p. 604, 2022. 

• [IJ41] Kwang-Woon Lee and Sung-Min Hong*, "Derivation of a universal charge model for multigate MOS Structures with arbitrary cross sections," IEEE Transactions on Electron Devices, vol. 69, pp. 3014-3021, 2022. 

• [IJ40] Nayan C. Das, Minjae Kim, Dong-uk Kwak, Janardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang "Effects of the operating ambiance and active layer treatments on the performance of magnesium fluoride based bipolar RRAM," Nanomaterials, vol. 12, p. 605, 2022.

• [IJ39] Nayan Chandra Das, Minjae Kim, Janardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang, "Low-temperature characteristics of magnesium fluoride based bipolar RRAM," Nanoscale, vol. 14, pp. 3738-3747, 2022.

2021

• [IJ38] Pyeung How Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong, Sungbae Lee, and Jae-Hyung Jang, "Side-illuminated photoconductive semiconductor switch based on high purity semi-insulating 4H-SiC," IEEE Transactions on Electron Devices,  vol. 68, pp. 6216-6221, 2021.

• [IJ37] Nayan C. Das, Minjae. Kim, Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang, "Electroforming-free bipolar resistive switching memory based on magnesium fluoride," Micromachines, vol. 12, p. 1049, 2021.

• [IJ36] Seung-Cheol Han, Jonghyun Choi,  and Sung-Min Hong*, "Acceleration of semiconductor device simulation with approximate solutions predicted by trained neural networks," , IEEE Transactions on Electron Devices, vol. 68, pp. 5483-5489, 2021.

• [IJ35] Kwang-Woon Lee and Sung-Min Hong*, "Compact charge model for Si gate-all-around nMOSCAPs with cylindrical cross-sections considering the density-gradient equation," Solid-State Electronics, vol. 181, p. 107959, 2021.     

2020

• [IJ34] Mi Jang, Juyeong Park, Ji Hyun Hwang, Ha Jin Mun, Suhyeong Cha, Sung-Min Hong, and Jae-Hyung Jang, "Effects of periodic patterns in recessed ohmic contacts on InAlGaN/GaN heterostructures," Solid-State Electronics, vol. 174, p. 107917, 2020.

• [IJ33] Se‐Mi Kim , Sung‐Min Hong,  and Jae‐Hyung Jang, "Strong and narrowband terahertz radiation from GaAs based pHEMT and terahertz imaging," Microwave and Optical Technology Letters, vol. 62, pp. 3791-3795, 2020.

• [IJ32]  Nayan C. Das, Se-I Oh,  Jarnardhanan R. Rani, Sung-Min Hong, and Jae-Hyung Jang, "Multilevel bipolar electroforming-free resistive switching memory based on silicon oxynitride," Applied Sciences, vol. 10, p. 3506, 2020. 

• [IJ31] Yong Pyo Kim, Pyeung Hwi Choi, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong*, Sungbae Lee, and Jae-Hyung Jang, "Photoresponses of the back-side illuminated GaAs photoconductive semiconductor switches,"  Solid-State Electronics, vol. 164, p. 107680, 2020.          

2019

• [IJ30] Ji Hyun Hwang, Gyejung Lee, Tayyab Nouman, Suhyeong Cha, Sung-Min Hong*, and Jae-Hyung Jang, "Self-aligned Metal-Semiconductor-Metal varactors based on the AlGaN/GaN heterostructure," IEEE Electron Device Letters, vol. 40, pp. 1740-1743, 2019.

• [IJ29] Junsung Park and Sung-Min Hong*, "First principles calculation of band offsets and defect energy levels in Al2O3/β-Ga2O3 interface structures with point defects," Journal of Semiconductor Technology and Science, vol. 19, pp. 413-425, 2019.

• [IJ28] Suhyeong Cha and Sung-Min Hong*, "Theoretical study of electron transport properties in GaN based HEMTs using a deterministic multi-subband Boltzmann transport equation solver," IEEE Transactions on Electron Devices, vol. 66, pp. 3740-3747, 2019. 

• [IJ27] Sung-Min Hong*, "Compact charge modeling of double-gate MOSFETs considering the density-gradient equation,"  IEEE Journal of the Electron Devices Society,  vol. 7, pp. 409-416, 2019.       

• [IJ26] Junsung Park and Sung-Min Hong*, "Simulation study of enhancement mode multi-gate vertical gallium oxide MOSFETs," ECS Journal of Solid State Science and Technology, vol. 8, pp. Q3116-Q3121, 2019.

• [IJ25] Geon-Tae Jang and Sung-Min Hong*, "An efficient method for subband calculation of cylindrical nanowire transistors using Fourier harmonics expansion,"  Journal of Computational Electronics, vol. 18, pp. 447-452, 2019.   

• [IJ24] Junsung Park and Sung-Min Hong*, "First principles approach to analyze defect-induced multiphonon transition at the Si-SiO2 interface,"  Journal of Semiconductor Technology and Science, vol. 19, pp. 145-152, 2019.   

2018

• [IJ23] Ha Jin Mun, Ji Hyun Hwang, Young-Ki Kwon, Sung-Min Hong, and Jae-Hyung Jang, "Improved ohmic contact by pre-metallization annealing process in quaternary In₀.₀₄Al₀.₆₅Ga₀.₃₁N/GaN HEMTs," Physica Status Solidi A, vol. 215, p. 1700430, 2018. 

• [IJ22] Sung-Min Hong* and Jae-Hyung Jang, "Transient simulation of semiconductor devices using a deterministic Boltzmann equation solver," IEEE Journal of the Electron Devices Society, vol. 6, pp. 156-163, 2018.  

2017

• [IJ21] Se-I Oh, Janardhanan Rani, Sung-Min Hong, and Jae-Hyung Jang, "Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid," Nanoscale, vol. 9, pp. 15314-15322, 2017.

• [IJ20] Sung-Min Hong* and Junsung Park, "Substrate partitioning scheme for compact charge modeling of multigate MOSFETs," IEEE Journal of the Electron Devices Society, vol. 5, pp. 149-156, 2017.

• [IJ19] Sung-Min Hong*, "Transient simulation of graphene sheets using a deterministic Boltzmann equation solver," Journal of Semiconductor Technology and Science, vol. 17, pp. 288-293, 2017.

• [IJ18] Ji Hyun Hwang, Kye-Jeong Lee, Sung-Min Hong, and Jae-Hyung Jang, "Balanced MSM-2DEG varactors based on AlGaN/GaN heterostructure with cutoff frequency of 1.54 THz," IEEE Electron Device Letters, vol. 38, pp. 107-110, 2017.

2016

• [IJ17] K. Rupp, C. Jungemann, S.-M. Hong, M. Bina, T. Grasser, and J. Jungel, "A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation," Journal of Computational Electronics, vol. 15, pp. 939-958, 2016.

• [IJ16] Ji Hyun Hwang, Se-Mi Kim, Jeong Min Woo, Sung-Min Hong, and Jae-Hyung Jang, "GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer," Physica Status Solidi A, vol. 213, pp. 889-892, 2016.

2015

• [IJ15] Sung-Min Hong* and Jae-Hyung Jang, "Numerical simulation of plasma oscillation in 2-D electron gas by using a periodic steady-state solver," IEEE Transactions on Electron Devices, vol. 62, pp. 4192-4198, 2015.

• [IJ14] Dae-Myeong Geum, Seung Heon Shin, Sung-Min Hong, and Jae-Hyung Jang, "Metal-semiconductor-metal varactors based on InAlN/GaN heterostructure with cutoff frequency of 308 GHz," IEEE Electron Device Letters, vol. 36, pp. 306-308, 2015.

• [IJ13] Jong Yul Park, Sung-Ho Kim, Sung-Min Hong, and Kyung Rok Kim, "Physical analysis and design of resonant plasma-wave transistors for terahertz emitters," IEEE Transactions on Terahertz Science and Technology, vol. 5, pp. 244-250, 2015. 

2013 

• [IJ12] C. Jungemann, A.-T. Pham, S.-M. Hong, L. Smith, and B. Meinerzhagen, “Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices,” Solid-State Electronics, vol. 84, pp. 112-119, 2013. 

~2013 (Before GIST) 

• [IJ11] Sung-Min Hong, Yongho Oh, Namhyung Kim, and Jae-Sung Rieh, “Phase noise calculation and variability analysis of RFCMOS LC oscillator based on physics-based mixed-mode simulation,” Solid-State Electronics, vol. 79, pp. 152-158, 2013. 

• [IJ10] Thanh Viet Dinh, Sung-Min Hong, and Christoph Jungemann, “Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress,” Solid-State Electronics, vol. 60, pp. 58-64, 2011. 

• [IJ9] Seonghoon Jin, Sung-Min Hong, and Christoph Jungemann, “An efficient approach to include full band effects in deterministic Boltzmann equation solver based on high-order spherical harmonics expansion,” IEEE Transactions on Electron Devices, vol. 58, pp. 1287-1294, 2011. 

• [IJ8] Sung-Min Hong and Christoph Jungemann, “Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion,” Journal of Computational Electronics, vol. 9, pp. 153-159, 2010. 

• [IJ7] Sung-Min Hong, Gregor Matz, and Christoph Jungemann, “A deterministic Boltzmann equation solver based on a higher order spherical harmonics expansion with full-band effect,” IEEE Transactions on Electron Devices, vol. 57, pp. 2390-2397, 2010. 

• [IJ6] Sung-Min Hong, Chan Hyeong Park, Young June Park, and Hong Shick Min, “Physics-based analysis and simulation of 1/f noise in MOSFETs under large-signal operation,” IEEE Transactions on Electron Devices, vol. 57, pp. 1110-1118, 2010. 

• [IJ5] Jun-Myung Woo, Hong-Hyun Park, Sung-Min Hong, In-Young Chung, Hong Shick Min, and Young June Park, “Statistical noise analysis of CMOS image sensors in dark condition,” IEEE Transactions on Electron Devices, vol. 56, pp. 2481-2488, 2009. 

• [IJ4] S.-M. Hong and C. Jungemann, “A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion,” Journal of Computational Electronics, vol. 8, pp. 225-241, 2009. 

• [IJ3] Myoung Jin Lee, Seonghoon Jin, Chang-Ki Baek, Sung-Min Hong, Soo-Young Park, Hong Hyun Park, Sang-Don Lee, Sung-Woong Chung, Jae-Goan Jeong, Sung-Joo Hong, Sung-Wook Park, In-Young Chung, Young June Park, Hong Shick Min, “A proposal on an optimized device structure with experimental studies on recent devices for the DRAM cell transistor,” IEEE Transactions on Electron Devices, vol. 54, pp. 3325-3335, 2007. 

• [IJ2] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Governing equations of the terminal current Green’s functions and their application to derivation of the Nyquist theorem for multi-terminal semiconductor devices,” Journal of Applied Physics, vol. 102, p. 073717, 2007. 

• [IJ1] Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, and Young June Park, “Physics-based analysis and simulation of phase noise in oscillators,” IEEE Transactions on Electron Devices, vol. 53, pp. 2195-2201, 2006.

Domestic

~2012 

• [DJ2] Chan Hyeong Park, Sung-Min Hong, Hong Shick Min, and Young June Park, “Analytical formula of the excess noise in homogeneous semiconductors," Journal of The Institute of Electronics Engineers of Korea, vol. 45-SD, pp. 8-13, 2008. (Korean version) 

• [DJ1] Raseong Kim, Sung-Min Hong, Young-June Park, and Hong Shick Min, “Harmonic balance analysis of MOSFET by using a new comprehensive quasi-2D model,” Journal of the Korean Physical Society, vol. 47, pp. S381-S386, 2005.