Geonho Park
Statistical distribution of DRAM retention time due to geometric fluctuation [DC48]
Statistical distribution of DRAM retention time due to geometric fluctuation [DC48]
In order to obtain accurate leakage & retention time distribution characteristics, we applied the geomentric fluctuations using ih-house structure generator.
Considering the geometric fluctuation, it was confirmed that the leakage current increased (retention time decreased) compared to normal devices. When these devices are included in a DRAM cell, DRAM performance is adversely affected. (Buried Channel Array Transistor)
