Power Supply Noise Improver
Power Supply Noise Reduction circuit
The difference between the transistor collector-emitter saturation voltage and the base-emitter turn-on voltage is essential for the operation of the single transistor power supply noise reduction circuit.
The collector-emitter saturation voltage is the voltage drop across the collector and emitter terminals of a transistor when it is fully turned on. It is typically around 0.2 volts for a silicon transistor.
The base-emitter turn-on voltage is the voltage drop across the base and emitter terminals of a transistor when it just starts to conduct. It is typically around 0.65 volts for a silicon transistor.
The difference between these two voltages is what allows the transistor to act as a buffer.