IGBT

• Forward bias: The output characteristics resemble those of a BJT, however, the gate-to-emitter voltage (VGE) controls the device due to its voltage-controlled nature.

• Reverse bias: There exists a maximum reverse voltage, designated as VRM, beyond which the device breaks down.

• Forward conduction: During forward conduction, there is a limit to the allowable voltage before collector-emitter breakdown occurs and gate looses control of collector current.

The IGBT's transfer characteristic, plotted as collector current (IC) versus gate-emitter voltage (VGE), reveals its switching behavior. Notably, the IGBT remains off (IC ≈ 0) when VGE is below a threshold voltage (VGET). Once VGE surpasses VGET, the IGBT gradually turns on, with increasing collector current corresponding to increasing VGE.