2022年度 業績

学術論文
[1] J. Casamento, K. Nomoto, T-S Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. Hwang, G. Xing, D. Jena,
      "FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors",
      IEDM Technical Digest 11.1.1-11.1.4 (2022).

[2] T. Maeda, R. Page, K. Nomoto, M. Toita, H. G. Xing and D. Jena,
      "AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer",
      Applied Physics Express 15, 061007 (2022).

[3] J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de Walle, A. Lal, H. G. Xing and D. Jena,
      "Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties",
      Applied Physics Letters 120, 152901 (2022).

[4] T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
      "Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes with Various Doping Concentrations",
      IEEE Electron Device Letters 43(1), 96-99 (2022).

国際学会発表
[1] T. Maeda,
      "ScAlN as a Material to Boost Next-Generation High Frequency GaN-based FETs",
      15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2023),
      Gifu (Japan), March 2023. Oral. [Invited]

[2] J. Casamento, K. Nomoto, T-S Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. Hwang, G. Xing, D. Jena,
    "FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors",
     The 68th International Electron Devices Meeting (IEDM2022), San Francisco (USA) + online, December. 2022. 11.1. Oral.

[3] T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
      “Temperature dependence of impact ionization coefficients in GaN”,
    International Workshop on Nitride Semiconductors 2022 (IWN 2022), Berlin (Germany), October 2022. AT235. Oral.

[4] J. Casamento, H. Lee, V. Gund, T. Maeda, K. Nomoto, S. Mu, W. Turner, L. van Deurzen, Y.-T. Shao, T.-S. Nguyen, B. Daveji, M. J. Asadi, J. Wright, P. Fay, C. G. Van de Walle, A. Lal, D. A. Muller, H. G. Xing, D. Jena,
    "Promising Physical Phenomena in Epitaxial Al1-xScxN - Enhanced Dielectric and Ferroelectric Behavior",
  International Workshop on Nitride Semiconductors 2022 (IWN 2022), Berlin (Germany), October 2022. AT196, Oral.

[5] K. Nomoto, T. S. Nguyen, J.  Casamento,  L. Li, A. Hickman, H. Lee, C. P. Savant, T. Maeda, H. G. Xing and D. Jena,
    "MBE Grown AlScN/AlN/GaN High Electron Mobility Transistors with Regrown Contact",
    The 14th Topical  Workshop on Heterostructure Microelectronics, Hiroshima (Japan), August 2022, Upgraded Oral.

[6] T. Maeda, R. Page, K. Nomoto, M. Toita, H. G. Xing and D. Jena,
      "Temperature Dependence of Current-Voltage Characteristics of AlN Schottky barrier diode fabricated on AlN bulk substrate",
      Compound Semiconductor Week 2022 (CSW 2022), University of Michigan (USA), June 2022, Oral.

[7] J. Casamento, H. Lee, T. Maeda, V. Gund, K. Nomoto, L. van Deurzen, W. Turner, P. Fay, S. Mu, C. G. Van de, Walle, A. Lal, H. G. Xing and D. Jena,
    "Epitaxial ScxAl1−xN on GaN exhibits attractive High-K Dielectric Properties",
    Compound Semiconductor Week 2022 (CSW 2022), University of Michigan (USA), June 2022, Oral.

国内学会発表
[1] 前田拓也, 成田哲生, 山田真嗣, 加地徹, 木本恒暢, 堀田昌宏, 須田淳
    "様々なドーピング密度を有するGaN p+-nおよびp-n+接合ダイオードの絶縁破壊電界",
    第83回応用物理学会秋季学術講演会, 22p-B204-10, 東北大学, 2022年9月, 口頭発表．

[2] 前田拓也, 江間研太郎, 佐々木公平,
      "β-Ga2O3ショットキーバリアダイオードにおけるFranz-Keldysh効果に起因した光電流",
    第70回応用物理学会秋季学術講演会, 17a-A301-1, 上智大学, 2023年3月, 口頭発表．

[3] 小林篤, 前田拓也, 本田善央, 上野耕平, 藤岡洋,  
      "スパッタ法でエピタキシャル成長させたScAlN薄膜の特性評価",
    第70回応用物理学会秋季学術講演会, 17a-B401-4, 上智大学, 2023年3月, 口頭発表．