2025年度 業績
学術論文
[1] A. Munakata, K. Sasaki, K. Ema, T. Maeda,
"Temperature dependence of barrier height in Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on thermionic emission-diffusion model,"
Applied Physics Express 18, 074001 (2025). [Open Access]
[2] T. Maeda, Y. Wakamoto, K. Kubota, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, A. Kobayashi,
"Demonstration of Sputtered ScAlN/MOVPE-AlGaN/AlN/GaN HEMT",
Proceedings of the 83rd Device Research Conference (DRC 83).
[3] S. Ota, T. Okuda, K. Kubota, Y. Wakamoto, T. Maeda, T. Kawahara, K. Makiyama, K. Nakata, A. Kobayashi,
"Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures",
APL Materials 13, 081112 (2025). [Editor's Pick] [Open Access]
国際学会発表
[1] T. Maeda, "High-Field Transport in Wide-Bandgap Nitride Semiconductors -Impact Ionization, Avalanche, Tunneling, and Velocity Saturation-",
Compound Semiconductor Week 2025 (CSW 2025), Banff (Canada), May 2025. [Young Plenary Hot Topics Talk]
[2] T. Maeda, Y. Wakamoto, K. Kubota, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, A. Kobayashi,
"Demonstration of Sputtered ScAlN/MOVPE-AlGaN/AlN/GaN HEMT",
The 83rd Device Research Conference (DRC 83), Duke University (USA), June 2025, Poster.
[3] T. Maeda, R. Nemoto, K. Ema, K. Sasaki, R. Nakane, M. Kobayashi,
“Electronic Properties of NiOx thin films grown by sputtering on β-Ga2O3 substrates
Characterized by X-ray Absorption Spectroscopy and Photoemission Spectroscopy”,
The 67th Electronic Materials Conference (EMC 67), Duke University (USA), June 2025, Oral.
[4] K. Kubota, Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, R. Nakane, T. Maeda,
"Scattering Mechanism of 2DEG in ScAlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral. [invited]
東大工学部プレスリリース
「新規窒化物半導体ヘテロ接合における電子散乱機構を解明 ―高周波GaNトランジスタの性能向上に道筋―」(Link)
日本経済新聞(電子版)「東大と住友電工、新規窒化物半導体ヘテロ接合における二次元電子ガスの散乱機構を解明」(Link)
[5] K. Kubota, Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, A. Kobayashi, T. Maeda,
"Enhancement of 2DEG Density by Sputtering Regrowth of ScAlN on AlGaN/AlN/GaN Heterostructure",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[6] I. Sasaki, M. Hiroki, K. Hirama, K. Kumakura, Y. Taniyasu, A. Tanaka, Y. Honda, T. Maeda,
"Origin of Local Barrier Height Lowering in AlN Schottky Barrier Diodes",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[7] H. Sasaki, A. Munakata, M. Kobayashi, R. Yamamoto, S. Sato, A. Kobayashi, T. Maeda,
"X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN Thin Films Grown by Sputtering on GaN",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[8] Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda,
"Comprehensive Study on Velocity Saturation Characteristics of 2DEG in AlGaN/GaN Heterostructures",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[9] A. Kobayashi, T. Okuda, S. Ota, T. Kawahara, K. Makiyama, K. Nakata, K. Kubota, Y. Wakamoto, T. Maeda,
"Sputter Epitaxy of ScAlN Films on MOCVD-Grown GaN HEMT Structures",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[10] T. Maeda, I. Sasaki, M. Hiroki, K. Hirama, K. Kumakura, Y. Taniyasu,
"Electrical Characterization of AlN Schottky Barrier Diodes at High Temperature",
The Lester Eastman Conference on High Performance Devices 2025 (LEC 2025), Gainesville (FL, USA), August 2025, Poster. [Late News]
[11] T. Maeda, "Recent Advances in ScAlN/GaN-based High Electron Mobility Transistors",
International Conference on Solid State Devices and Materials 2025 (SSDM 2025), Yokohama (Japan), September 2025. [invited]
国内学会発表
[1] 前田拓也, 若本裕介, 佐々木一晴, 棟方晟啓, 廣木正伸, 平間一行, 熊倉一英, 谷保芳孝,
“窒化アルミニウム系ショットキーバリアダイオードの電流輸送機構の解明”,
電気学会電子デバイス研究会「化合物半導体を用いた次世代高機能デバイス技術とアプリケーション」, 栃木, 2025年4月. [招待講演]
[2] 久保田航瑛, 若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 中根了昌, 前田拓也,
"PA-MBE成長ScAlN/GaNヘテロ構造における二次元電子ガスの散乱機構解析",
第17回ナノ構造エピタキシャル成長講演会, 北海道, 2025/07, SP+Poster. [発表奨励賞]
[3] 佐々木一晴, 廣木正伸, 熊倉一英, 平間一行, 谷保芳孝, 前田拓也,
"AlN基板上AlNショットキーバリアダイオードの障壁高さの温度依存性",
第17回ナノ構造エピタキシャル成長講演会, 北海道, 2025/07, SP+Poster.
[4] 佐々木洸, 棟方晟啓, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 小林正起, 中根了昌, 前田拓也,
"PA-MBE成長ScAlN/GaNの構造特性とXPS測定による表面酸化状態評価",
第17回ナノ構造エピタキシャル成長講演会, 北海道, 2025/07, SP+Poster. [発表奨励賞]
[5] 若本裕介, 高橋俊, 田中敦之, 前田拓也, 小関泰之,
“誘導ラマン散乱顕微法によるGaN自立基板中レーザー誘起歪みの高速三次元イメージング”
第86回応用物理学会秋季学術講演会, 8a-N322-1, 9/8(月) 9:30-9:45 (2025).
[6] 佐々木一晴, 廣木正伸, 熊倉一英, 平間一行, 谷保芳孝, 前田拓也
“I-V , C-V 測定から求めたAlNショットキーバリアダイオードの障壁高さの温度依存性”
第86回応用物理学会秋季学術講演会, 8p-N322-3, 9/8(月) 14:30-14:45 (2025).
[7] 若本裕介, 久保田航瑛, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 小林篤, 前田拓也
“ScAlN/AlGaN/AlN/GaNヘテロ構造における2DEGのShubnikov-de Haas振動”
第86回応用物理学会秋季学術講演会, 8p-N322-12, 9/8(月) 17:00-17:15 (2025).
[8] 久保田航瑛, 若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 中根了昌, 前田拓也
“PA-MBE成⻑ScAlN/GaNへテロ接合における二次元電子ガスの輸送特性”
第86回応用物理学会秋季学術講演会, 8p-N322-13, 9/8(月) 17:15-17:30 (2025).
[9] 城谷光亮, 佐藤早和紀, 小林篤, 前田拓也,
“GaN/sapphire基板上スパッタ成⻑ScAlN薄膜の電気的特性”,
第86回応用物理学会秋季学術講演会, 8p-N322-14, 9/8(月) 17:30-17:45 (2025).
[10] 李晉維, 磯憲司, 中根了昌, 前田拓也,
“半絶縁性GaN基板にSiイオン注入を用いて作製したGaN光伝導型スイッチの動作実証”,
第86回応用物理学会秋季学術講演会, 9a-N322-3, 9/9(火) 10:30-10:45 (2025).
[11] 高橋俊, 若本裕介, 車一宏, 前田拓也, 小関泰之,
“誘導ラマン散乱を用いたGaN結晶中転位の高速3Dイメージング”
第86回応用物理学会秋季学術講演会, 9p-N301-3, 9/9(火) 14:15-14:30 (2025). [注目講演]
[12] 奥田朋也, 前田拓也, 河原孝彦, 牧山剛三, 中田健, 池田和久, 小林篤,
“ScAlN/AlGaN/AlN/GaNヘテロ構造の電気特性へのScAlN成⻑温度の影響”,
第86回応用物理学会秋季学術講演会, 9p-N321-9, 9/9(火) 15:45-16:00 (2025).
[13] 佐藤早和紀, 若本裕介, 前田拓也, 舟窪浩, 上野耕平, 藤岡洋, 池田和久, 小林篤,
“スパッタ法でn型GaN上にエピタキシャル成⻑させたScAlNの強誘電性”,
第86回応用物理学会秋季学術講演会, 9p-N321-10, 9/9(火) 16:00-16:15 (2025).
[14] Y. Wakamoto and T. Maeda,
"Numerical Calculation of 2DEG in Nitride Semiconductor Heterostructure Incorporating the ModifiedFang-Howard Wave Functions with Second Subband",
The 44th Electronic Materials Symposium (EMS 44), We1-18 (2025).
[15] I. Sasaki, M Hiroki, K. Kumakura, K. Hirama, Y. Taniyasu, T. Maeda,
"Characterization of temperature dependence of barrier height in Si-doped AlN Schottky barrier diodes on AlN substrates",
The 44th Electronic Materials Symposium (EMS 44), We1-19 (2025).
[16] C. Li, K. Iso, R. Nakane, T. Maeda,
"Demonstration of GaN Photoconductive Semiconductor Switches Using Mn-doped Semi-insulatingGaN Substrates",
The 44th Electronic Materials Symposium (EMS 44), We1-29 (2025).
[17] T. Okuda, Y. Wakamoto, K. Kubota, T. Kawahara, K. Makiyama, K. Nakata, K. Ikeda, T. Maeda, A. Kobayashi,
"Effect of Growth Temperature of ScAlN on Electrical Properties of ScAlN/AlGaN/AlN/GaN Heterostructures",
The 44th Electronic Materials Symposium (EMS 44), We1-30 (2025).
[18] S. Sato, Y. Wakamoto, T. Maeda, H. Funakubo, K. Ueno, H. Fujioka, K. Ikeda, A. Kobayashi,
"Ferroelectric properties of ScAlN films epitaxially grown on GaN by sputtering",
The 44th Electronic Materials Symposium (EMS 44), We1-31 (2025).
[19] H. Sasaki, A. Munakata, M. Kobayashi, R. Yamamoto, S. Sato, A. Kobayashi, T. Maeda,
"X-ray Spectroscopic Measurements of Surface Oxidation of ScAlN Thin Films Grown by Sputtering on GaN",
The 44th Electronic Materials Symposium (EMS 44), We1-32 (2025).
[20] K. Joya, S. Sato, A. Kobayashi, T. Maeda,
"Carrier Trapping Effect in Sputtered ScAlN Thin Films Grown on GaN/Sapphire Substrates",
The 44th Electronic Materials Symposium (EMS 44), We1-33 (2025).
[21] K. Kubota, Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, A.Kobayashi, R. Nakane, T. Maeda,
"Comparative Study on 2DEG Transport in ScAlN/GaN-based Heterostructures Grown by Sputtering and Plasma-Assisted Molecular Beam Epitaxy",
The 44th Electronic Materials Symposium (EMS 44), We1-34 (2025).
[22] A. Kobayashi and T. Maeda,
"Ferroelectricity in nitride semiconductors and its device application via sputtering epitaxy",
The 44th Electronic Materials Symposium (EMS 44), Th1-1 (2025). [invited]
過去の業績
2024年度 (Link): 学術論文9件, 国際会議12件(うち招待講演4件), 国内会議24件 (うち招待講演3件, 受賞2件)
2023年度 (Link): 学術論文3件, 国際会議9件(うち招待講演2件), 国内会議17件 (うち招待講演6件, 受賞2件)
2022年度 (Link): 学術論文4件, 国際会議7件(うち招待講演1件), 国内会議3件