国際会議 International Workshop on Nitride Semiconductors 2026 (IWN 2026) で9件の発表を行います
2026年11月8–13日に熊本城ホールで行われますInternational Workshop on Nitride Semiconductors 2026 (IWN 2026)にて下記9件の発表を行います．若本裕介くん(D1)は、一般投稿から査読で高い評価を受けて招待講演に選出されました。
[1] T. Fuji, K. Peret, M. Chlipała, H Turski, T. Maeda,
"Characterization of Point Defects in p-GaN Layers Grown by PA-MBE Measured by Deep Level Transient Fourier Spectroscopy",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 9, 15:00-17:00, 2026, MoP-CH-4, Poster.
[2] K. Joya, K. Kubota, H. Sasaki, R. Nakane, T. Maeda,
"I-V, C-V and IPE Characteristics of ScAlN/GaN Heterostructure Grown by Plasma-Assisted Molecular Beam Epitaxy",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 10, 17:30-17:45, 2026, ED9-3, Oral.
[3] K. Kubota, Y. Wakamoto, H. Sasaki, K. Joya, T. Fuji, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, R. Nakane, T. Maeda,
"Enhancement of 2DEG Mobility in PA-MBE-Grown ScAlN/GaN Heterostructures by Inserting an AlN Interlayer",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 10, 17:45-18:00, 2026, ED9-4, Oral.
[4] R. Masumoto, Y. Wakamoto, K. Iso, R. Nakane, T. Maeda,
"Demonstration of GaN Photoconductive Semiconductor Switches with Deep n-type Contacts Fabricated by Si-Ion Channeling Implantation",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 12, 09:30-09:45, 2026, ED12-4, Oral.
[5] T. Maeda, A. Munakata, M. Kobayashi, R. Nakane, K. Peret, M. Chlipała, H. Turski,
"Field Emission from Crystal-Field Split-Off Band in Metal/p-GaN Interface: The Dominant Transport Mechanism of p-GaN Ohmic Contact",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 12, 09:30-09:45, 2026, ED11-4, Oral.
[6] H. Sasaki, T. Takeda, A. Munakata, K. Kubota, K. Joya, T. Fuji, M. Kobayashi, A. Fujimori, R. Nakane, M. Sugiyama, T. Maeda,
"Suppression of Surface Oxidation of ScAlN by GaN Cap Layer Grown by Plasma-Assisted Molecular Beam Epitaxy",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 12, 09:45-10:00, 2026, CH9-5, Oral.
[7] Y. Wakamoto, K. Kubota, T. Okuda, S. Kurogi, A. Kobayashi, T. Maeda,
"Hall Effect Properties and Shubnikov-de Haas Oscillations of 2DEG in ScAlN/AlGaN/AlN/GaN and NbAlN/AlGaN/AlN/GaN Heterostructure",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 12, 16:30-16:45, 2026, CH12-1, Oral. [invited]
[8] I. Sasaki, M. Hiroki, K. Hirama, Y. Taniyasu, T. Maeda,
"AlN-Based SBDs with Distributed Polarization Doping Drift Layer Operating Over an Ultrawide Temperature Range from 80 K to 573 K",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 13, 09:15-09:30, 2026, ED17-3, Oral.
[9] A. Munakata, T. Takeda, H. Sasaki, Y. Nakagawa, A. Fujimori, T. Maeda, M. Kobayashi,
"Anisotropy in the Valence-Band Dispersion of GaN Measured by Angle-Resolved Photoemission Spectroscopy",
International Workshop on Nitride Semiconductors 2026 (IWN 2026), Kumamoto (Japan), Nov. 13, 11:15-11:30, 2026, CH17-3, Oral.
IWN 2026 HP: https://iwn2026.jp/