第45回電子材料シンポジウム(EMS 45)で8件の発表を行います
2026年10月14–16日にグランドメルキュール奈良橿原で行われます第45 回電子材料シンポジウム(EMS 45)にて下記8件の発表を行います．
[1] Y. Wakamoto, K. Iso, R. Nakane, T. Maeda,
"Analysis of Capacitance of GaN Photoconductive Semiconductor Switches to Extract the Depth of Deep n-type Contact Region",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[2] K. Kubota, Y. Wakamoto, H. Sasaki, K. Joya, T. Fuji, T. Sugita, T. Kawahara, Y. Arakawa, S. Yoshida, K. Makiyama, K. Nakata, R. Nakane, T. Maeda,
"Demonstration of ScAlN/AlN/GaN HEMT Grown by PA-MBE with High Drain Current Over 2 A/mm",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[3] I. Sasaki, M. Hiroki, K. Hirama, Y. Taniyasu, T. Maeda,
"AlN-Based Schottky Barrier Diodes for Low-Loss, High-Voltage, and Ultrawide Temperature-Range Operation",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[4] H. Sasaki, T. Takeda, A. Munakata, K. Kubota, K. Joya, T. Fuji, T. Okuda, S. Kurogi,
M. Kobayashi, A. Fujimori, A. Kobayashi, R. Nakane, M. Sugiyama, T. Maeda,
"Characterization of Surface Oxidation of ScAlN and NbAlN Thin Films",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[5] T. Fuji, K. Peret, M. Chlipała, H Turski, T. Maeda,
"Hole Traps in PA-MBE-Grown p-GaN Measured by DLTFS Method",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[6] T. Sugita, Y. Wakamoto, T. Maeda,
"Effect of Recess Etching on 2DEG Density in AlGaN/AlN/GaN Simulated by 1D Poisson-Schrödinger Solver",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[7] R. Masumoto, Y. Wakamoto, K. Iso, R. Nakane, T. Maeda,
"Fabrication of GaN Photoconductive Semiconductor Switches with Deep n-type Contacts to Enhance Photocarrier Collective Efficiency",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
[8] K. Wakabayashi and T. Maeda,
"Simulation of Zener tunneling current and avalanche multiplication in GaN p-n junction toward fabrication of GaN avalanche photodiodes",
The 45th Electronic Materials Symposium (EMS 45), グランドメルキュール奈良橿原, 10/14-16, (2026).
EMS 45 HP: https://ems.jpn.org/