第44回電子材料シンポジウム(EMS44)で9件の発表を行います

2025年10月に奈良県橿原で開催されます第44回電子材料シンポジウム(EMS 44)で下記9件の発表を行います．

[1] Y. Wakamoto* and T. Maeda*,
    *The University of Tokyo, 
    "Numerical Calculation of 2DEG in Nitride Semiconductor Heterostructure Incorporating the ModifiedFang-Howard Wave Functions with Second Subband",
    The 44th Electronic Materials Symposium (EMS 44), We1-18 (2025).

[2] I. Sasaki*, M Hiroki**, K. Kumakura**, K. Hirama**, Y. Taniyasu**, T. Maeda*,
    *The University of Tokyo, **Basic Research Laboratories, NTT Inc.  
    "Characterization of temperature dependence of barrier height in Si-doped AlN Schottky barrier diodes on AlN substrates",
    The 44th Electronic Materials Symposium (EMS 44), We1-19 (2025).

[3] C. Li*, K. Iso**, R. Nakane*, T. Maeda*,
    *The University of Tokyo, **Mitsubishi Chemical Co. 
    "Demonstration of GaN Photoconductive Semiconductor Switches Using Mn-doped Semi-insulatingGaN Substrates",
    The 44th Electronic Materials Symposium (EMS 44), We1-29 (2025).

[4] T. Okuda*, Y. Wakamoto**, K. Kubota**, T. Kawahara***, K. Makiyama***, K. Nakata***, K. Ikeda***, T. Maeda**, A. Kobayashi*,
    *Tokyo University of Science, **The University of Tokyo, ***Sumitomo Electric Industries, Ltd.
    "Effect of Growth Temperature of ScAlN on Electrical Properties of ScAlN/AlGaN/AlN/GaN Heterostructures",
    The 44th Electronic Materials Symposium (EMS 44), We1-30 (2025).

[5] S. Sato*, Y. Wakamoto**, T. Maeda**, H. Funakubo***, K. Ueno**, H. Fujioka**, K. Ikeda*, A. Kobayashi*,
    *Tokyo University of Science, **The University of Tokyo, ***Institute of Science Tokyo,
    "Ferroelectric properties of ScAlN films epitaxially grown on GaN by sputtering",
    The 44th Electronic Materials Symposium (EMS 44), We1-31 (2025).

[6] H. Sasaki*, A. Munakata*, M. Kobayashi*, R. Yamamoto**, S. Sato**, A. Kobayashi**, T. Maeda*,
    *The University of Tokyo, **Tokyo University of Science,
    "X-ray Spectroscopic Measurements of Surface Oxidation of ScAlN Thin Films Grown by Sputtering on GaN",
    The 44th Electronic Materials Symposium (EMS 44), We1-32 (2025).

[7] K. Joya*, S. Sato**, A. Kobayashi**, T. Maeda*,
    *The University of Tokyo, **Tokyo University of Science,
    "Carrier Trapping Effect in Sputtered ScAlN Thin Films Grown on GaN/Sapphire Substrates",
    The 44th Electronic Materials Symposium (EMS 44), We1-33 (2025).

[8] K. Kubota*, Y. Wakamoto*, T. Kawahara**, S. Yoshida**, K. Makiyama**, K. Nakata**, A.Kobayashi***, R. Nakane*, T. Maeda*,
    *The University of Tokyo, **Sumitomo Electric Industries, Ltd., ***Tokyo University of Science,
    "Comparative Study on 2DEG Transport in ScAlN/GaN-based Heterostructures Grown by Sputtering and Plasma-Assisted Molecular Beam Epitaxy",
    The 44th Electronic Materials Symposium (EMS 44), We1-34 (2025).

[9] A. Kobayashi* and T. Maeda**,
    *Tokyo University of Science, **The University of Tokyo,
    "Ferroelectricity in nitride semiconductors and its device application via sputtering epitaxy",
    The 44th Electronic Materials Symposium (EMS 44), Th1-1 (2025). [invited]