国際会議 ICNS 15で6件の発表を行います
2025年7月6-11日にMalmö (Sweden)で行われる国際会議 The 15th International Conference on Nitride Semiconductors (ICNS 15)にて，下記6件の発表を行います．
久保田航瑛くん(M1)の発表[1]は，一般投稿から査読で高く評価され招待講演に選出されました．
[1] K. Kubota*, Y. Wakamoto*, T. Kawahara**, S. Yoshida**, K. Makiyama**, K. Nakata**, R. Nakane*, T. Maeda*,
*The University of Tokyo, **Sumitomo Electric Industries, Ltd.
"Scattering Mechanism of 2DEG in ScAlN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral. [invited]
[2] K. Kubota*, Y. Wakamoto*, T. Kawahara**, S. Yoshida**, K. Makiyama**, K. Nakata**, A. Kobayashi***, T. Maeda*,
*The University of Tokyo, **Sumitomo Electric Industries, Ltd., ***Tokyo University of Science
"Enhancement of 2DEG Density by Sputtering Regrowth of ScAlN on AlGaN/AlN/GaN Heterostructure",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[3] I. Sasaki*, M. Hiroki**, K. Hirama**, K. Kumakura**, Y. Taniyasu**, A. Tanaka***, Y. Honda***, T. Maeda*,
*The University of Tokyo, **NTT Basic Research Lab., NTT Co., ***Nagoya University
"Origin of Local Barrier Height Lowering in AlN Schottky Barrier Diodes",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[4] H. Sasaki*, A. Munakata*, M. Kobayashi*, R. Yamamoto**, S. Sato**, A. Kobayashi**, T. Maeda*,
*The University of Tokyo, **Tokyo University of Science
"X-ray Spectroscopic Characterization of Surface Oxidation of ScAlN Thin Films Grown by Sputtering on GaN",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[5] Y. Wakamoto*, T. Kawahara**, S. Yoshida**, K. Makiyama**, K. Nakata**, T. Maeda*,
*The University of Tokyo, **Sumitomo Electric Industries, Ltd.
"Comprehensive Study on Velocity Saturation Characteristics of 2DEG in AlGaN/GaN Heterostructures",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
[6] A. Kobayashi*, T. Okuda*, S. Ota*, T. Kawahara**, K. Makiyama**, K. Nakata**, K. Kubota***, Y. Wakamoto***, T. Maeda***,
*Tokyo University of Science, **Sumitomo Electric Industries, Ltd., ***The University of Tokyo
"Sputter Epitaxy of ScAlN Films on MOCVD-Grown GaN HEMT Structures",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral.
また，前田研の成果ではないですが，共同指導の棟方晟啓くん(小林正起研M2)も下記の内容で発表します．
棟方晟啓くんの発表も一般投稿から査読で高く評価され招待講演に選出されました．おめでとうございます！
[7] A. Munakata*, S. Arikawa*, Y. Nakagawa**, M. Kobayashi*,
*The University of Tokyo, **Nichia Corporation
"Determination of the band splitting and hole effective mass of GaN from valence-band structure observed by angle-resolved photoemission spectroscopy",
The 15th International Conference on Nitride Semiconductors (ICNS 15), Malmö (Sweden), July 2025, Oral. [invited]
ICNS 15 HP Link: https://mkon.nu/icns-15 , Invited Speakers: https://mkon.nu/icns-15/invited_speakers