Micro-cantilevers fabricated on the Si/DE interface of a 3D-IC chiplet with actual patterns
Site-specific interfacial strength of 3D-IC chiplet can be measured using notched micro-cantilevers. The test results are used to provide processing strategies for improving the bonding strength of the structural weaker sites, e.g. chip edge or dielectric/Si interface
This work was sponsored by TSMC and ASE