Journals

• Tsung-En Lee, Kasidit Toprasertpong, Zaoyang Lin, Mitsuru Takenaka, and Shinichi Takagi, “Revision of Conductance Method for Evaluating Interface State Density at Metal- Ferroelectric-Insulator-Semiconductor Interfaces,” IEEE Transactions on Electron Devices (to be submitted)

• Yu-Wei Hsu, Chen-Hsun Hsu, Ching-Shuan Huang, Nien-En Chiang, Yun-Cheng Liu, Ting-Hua Wei, Sin-Yue Li, I-Chih Ni, Hung-Li Chiang, Chih-I Wu and Tsung-En Lee*, ”Reduction of MOS interface defects in TiN/Y2O3/Si0.78Ge0.22 structures by trimethylaluminum treatment,” IEEE Transactions on Electron Devices (2026) (accepted)

• Yu-Wei Hsu , Yu-Tung Lin, Nien-En Chiang, Shao-Heng Chen, Ying-Zhan Chiu, Chen-Hsun Hsu, Ting-Hua Wei, Sin-Yue Lee, Zi-Quan Su, Hung-Li Chiang, I-Chih Ni, Tsung-En Lee* and Chih-I Wu*, ” Impacts of EOT Scaling of ZrOx/HfOx Dielectric on Monolayer WSe2 Top-Gate p-MOSFETs,” IEEE Electron Device Letters 47 (2026) 637. DOI: 10.1109/LED.2026.3657560                                                                

• Yuan-Chun Su, Shu-Jui Chang, D. Mahaveer Sathaiya, Chen-Feng Hsu, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Yen-Fa Liao, Shu-Chih Haw, Chih-Wei Hu, San-Lin Liew, Vincent Duen-Huei Hou, T.-Y. Lee, Chao-Ching Cheng, Tsung-En Lee*, and Iuliana P. Radu, “Conformal Atomic Layer Deposition of Gate Dielectrics on Monolayer MoS2 for Gate-All-Around Transistors,” IEEE Transactions on Electron Devices (2025) 4067. DOI: 10.1109/TED.2025.3629599

• Yu-Tung Lin, Yu-Wei Hsu, Zih-Yun Fong, Ming-Yu Shen, Ching-Hao Hsu, Shu-Jui Chang, Ying-Zhan Chiu, Shao-Heng Chen, Nien-En Chiang, I-Chih Ni, Tsung-En Lee*, and Chih-I Wu*, “Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSe2 P-Type Transistors,” Nano Letters (IF=9.1), 2025. DOI: 10.1021/acs.nanolett.4c06407.

• Yi-Xuan Chen, Yi-Lin, Wang, Fu-Jyuan, Li, Shu-Jui Chang, Tsung-En Lee, Chao-Ching Cheng, Meng-Chien Lee, Hui-Hsuan Li, Yu- Hsien Lin, and Chao-Hsin Chien, “Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors” IEEE Transactions on Nanotechnology (accepted)

• Tsung-En Lee, Kasidit Toprasertpong, Mitsuru Takenaka, and Shinichi Takagi, “Re-examination of effects of ALD high-k materials on defects reduction in SiGe metal-oxide-semiconductor interfaces,” AIP Advances 11 (2021) 085021. DOI: 10.1063/5.0061573                                                                                                                                

• T.-E. Lee, K. Toprasertpong, M. Takenaka, and S. Takagi, “Impacts of EOT scaling of TiN/Y2O3 gate stacks with TMA treatment on SiGe MOS interface properties,” IEEE Electron Device Letters 42 (2021) 966-969. DOI: 10.1109/LED.2021.3081513                                                                                                                                

• Tsung-En Lee, Mengnan Ke, Kasidit Toprasertpong, Mitsuru Takenaka, and Shinichi Takagi, ”Reduction of MOS interface defects in TiN/Y2O3/Si0.78Ge0.22 structures by trimethylaluminum treatment,” IEEE Transactions on Electron Devices 67 (2020) 4067. DOI: 10.1109/TED.2020.3014563                                                                                                                                

• Tsung-En Lee, Mengnan Ke, Kimihiko Kato, Mitsuru Takenaka, and Shinichi Takagi, “Reduction in interface trap density of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature PMA,” J. Appl. Phys. 127 (2020) 185705. DOI: 10.1063/1.5144198                                                                                                                                

• T.-E. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi, "Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks,” Microelectronic Engineering 214 (2019) 87. DOI: 10.1016/j.mee.2019.05.005