Journals

• Tsung-En Lee, Yuan-Chun Su, Ying-Han Chang, Shu-Jui Chang, Chen-Feng Hsu, Bo-Heng Liu, Chien-Ying Su, San-Lin Liew, Vincent Duen-Huei Hou, Chi-Chung Kei, T.-Y. Lee, Chao-Ching Cheng, Wen-Hao Chang and Iuliana P. Radu, “Development of conformal ALD gate dielectric in monolayer MoS2 nanosheet” ACS Applied Materials & Interfaces (to be submitted)

• Tsung-En Lee, Kasidit Toprasertpong, Zaoyang Lin, Mitsuru Takenaka, and Shinichi Takagi, “Revision of Conductance Method for Evaluating Interface State Density at Metal- Ferroelectric-Insulator-Semiconductor Interfaces,” IEEE Transactions on Electron Devices (to be submitted)

• Yi-Xuan Chen, Yi-Lin, Wang, Fu-Jyuan, Li, Shu-Jui Chang, Tsung-En Lee, Chao-Ching Cheng, Meng-Chien Lee, Hui-Hsuan Li, Yu- Hsien Lin, and Chao-Hsin Chien, “Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors” IEEE Transactions on Nanotechnology (accepted)

• Tsung-En Lee, Kasidit Toprasertpong, Mitsuru Takenaka, and Shinichi Takagi, “Re-examination of effects of ALD high-k materials on defects reduction in SiGe metal-oxide-semiconductor interfaces,” AIP Advances 11 (2021) 085021. DOI: 10.1063/5.0061573

• T.-E. Lee, K. Toprasertpong, M. Takenaka, and S. Takagi, “Impacts of EOT scaling of TiN/Y2O3 gate stacks with TMA treatment on SiGe MOS interface properties,” IEEE Electron Device Letters 42 (2021) 966-969. DOI: 10.1109/LED.2021.3081513

• Tsung-En Lee, Mengnan Ke, Kasidit Toprasertpong, Mitsuru Takenaka, and Shinichi Takagi, ”Reduction of MOS interface defects in TiN/Y2O3/Si0.78Ge0.22 structures by trimethylaluminum treatment,” IEEE Transactions on Electron Devices 67 (2020) 4067. DOI: 10.1109/TED.2020.3014563

• Tsung-En Lee, Mengnan Ke, Kimihiko Kato, Mitsuru Takenaka, and Shinichi Takagi, “Reduction in interface trap density of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature PMA,” J. Appl. Phys. 127 (2020) 185705. DOI: 10.1063/1.5144198

• T.-E. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi, "Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks,” Microelectronic Engineering 214 (2019) 87. DOI: 10.1016/j.mee.2019.05.005