IEDM/VLSI
IEDM/VLSI
(Oral) Ang-Sheng Chou, Ching-Hao Hsu, Yu-Tung Lin, Fa-Rong Hou, Edward Chen, Po-Sen Mao, Ming-Yang Li, Sui-An Chou, Dawei Heh, Hsiang-Chi Hu, Yu-Sung Chang, Wen-Chia Wu, Zih-Syuan Huang, , Yu-Wei Hsu, Yuan-Chun Su, Terry Hung, Po-Hsun Ho, Tsung-En Lee, Chen-Feng Hsu, Goutham Arutchelvan, Yun-Yan Chung, Chao-Hsin Chien, Georgios Vellianitis, Wei-Yen Woon, Jin Cai, Mark van Dal, Wen-Hao Chang, Chih-I Wu, Chao-Ching Cheng and Iuliana Radu, “Low-Power CMOS Inverter with Enhancement-mode Operation and Matched VTH at VDD = 1 V on Monolayer 2D Material Channel,” 70th International Electron Devices Meeting (IEDM), Dec. 7-11, 2024, San Francisco, CA
(Oral) Tsung-En Lee, Hung-Li Chiang, Chih-Yu Chang, Yuan-Chun Su, Shu-Jui Chang, Jui-Jen Wu, Bo-Jiun Lin, Jer-Fu Wang, Shu-Chih Haw, Shang-Jui Chiu, He-Liang Ching, Yan-Gu Lin, Wei-Sheng Yun, Chen-Feng Hsu, Hengyuan Lee, Tung-Ying Lee, Matthias Passlack, Chao-Ching Cheng, Chih-Sheng Chang, H.-S. Philip Wong, Wen-Hao Chang, Meng-Fan Chang, Yu-Ming Lin, and Iuliana P. Radu, “High-Endurance MoS2 FeFET with Operating Voltage Less Than 1V for eNVM in Scaled CMOS Technologies,” 69th International Electron Devices Meeting (IEDM), Dec. 9-13, 2023, San Francisco, CA
(Highlighted paper) (Oral) Yun-Yan Chung, Wei-Sheng Yun, Bo-Jhih Chou, Chen-Feng Hsu, Shao-Ming Yu, G. Arutchelvan, Ming-Yang Li, Tsung-En Lee, Chen-Yi Li, D. Mahaveer Sathaiya, Bo-Jiun Lin, Cheng-Ting Chung, Jin Cai, San-Lin Liew, Vincent D.-H. Hou, Bo-Heng Liu, Chien-Wei Chen, Chien-Ying Su, Chi-Chung Kei, Wen-Hao Chang, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, and Iuliana P. Radu, “Monolayer-MoS2 Stacked Nanosheet Channel with C-type Metal Contact,” 69th International Electron Devices Meeting (IEDM), Dec. 9-13, 2023, San Francisco, CA
(Highlighted paper) (Oral) Ang-Sheng Chou, Ching-Hao Hsu, Yu-Tung Lin, Goutham Arutchelvan, Edward Chen, Terry Y.T. Hung, Chen-Feng Hsu, Sui-An Chou, Tsung-En Lee, Oreste Madia, Gerben Doornbos, Yuan-Chun Su, Amin Azizi, D. Mahaveer Sathaiya, Jin Cai, Jer-Fu Wang, Yun-Yan Chung, Wen-Chia Wu, Katie Neilson, Wei-Sheng Yun, Yu-Wei Hsu, Ming-Chun Hsu, Fa-Rong Hou, Yun-Yang Shen, Chao-Hsin Chien, Chung-Cheng Wu, Jeff Wu, H.-S. Philip Wong, Wen-Hao Chang, Mark van Dal, Chao-Ching Cheng, Chih-I Wu and Iuliana P. Radu, “Status and Performance of Integration Modules Toward Scaled CMOS with Transition Metal Dichalcogenide Channel,” 69th International Electron Devices Meeting (IEDM), Dec. 9-13, 2023, San Francisco, CA
(Oral) Nathaniel Safron, Hsin-Yuan Chiu, Tzu-Ang Chao, Sheng-Kai Su Matthias Passlack, Kuang-Hsiang Chiu, Chen-Wei Chen, Chi-Chung Kei, Chen-Han Chou, Tsung-En Lee, Jer-Fu Wang, Chih-Sheng Chang, San-Lin Liew, Vincent D.-H. Hou, Han Wang, Wen-Hao Chang, H.-S. Philip Wong, Gregory Pitner, Chao-Hsin Chien, Iuliana P. Radu, “Low N-Type Contact Resistance to Carbon Nanotubes in Highly Scaled Contacts through Dielectric Doping,” 69th International Electron Devices Meeting (IEDM), Dec. 9-13, 2023, San Francisco, CA
(Highlighted paper) Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi Xuan-Chen, Wei-Sheng Yun, Po-Hsun Ho, Jer-Fu Wang, Sheng-Kai Su, Chen-Feng Hsu, Po-Sen Mao, Yu-Cheng Chang, Chao-Hsin Chien, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T.-Y. Lee, Wen-Hao Chang, Chao-Ching Cheng, Iuliana P. Radu, “Nearly Ideal Subthreshold Swing in Monolayer MoS2 Top-Gate nFETs with Scaled EOT of 1 nm,” 68th International Electron Devices Meeting (IEDM), Dec. 3-7, 2022, San Francisco, CA
(Oral) K. Toprasertpong, Z. -Y. Lin, T. -E. Lee, M. Takenaka, and S. Takagi, “Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2x1013 cm-2,” 2020 Symposia on VLSI Technology and Circuits, Hilton Hawaiian Village, Honolulu, HI, June 14-19, 2020
(Oral) T.-E. Lee, K.Kato, M. Ke, M. Takenaka and S. Takagi, “Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA passivation,” 2019 Symposia on VLSI Technology and Circuits, RIHGA Royal Hotel, Kyoto, Japan, June 9-14, 2019