4. Method of forming lateral pn junctions in iii-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation, Siddharth Rajan, Mohammed Wahidur Rahman, Hareesh Chandrasekar, United States Patent & Trademark Office, US20210296449A1, Filing Date: 18-Mar-2021.
3. Process for the growth of high stress metal nitride films on substrates, Srinivasan Raghavan, Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, K N Bhat, Navakanta Bhat, N Ravishankar, Indian Patent Office, Patent Number: 359693, Grant Date: 26-Feb-2021.
2. Platform of large metal nitride islands with lateral orientations and low-defect density, Srinivasan Raghavan, Hareesh Chandrasekar, Nagaboopathy Mohan, Dhayalan Shakthivel, United States Patent & Trademark Office, US10854719B2, Grant Date: 2020/12/01
1. Platform of large area metal nitride islands with lateral orientations and low-defect density, Srinivasan Raghavan, Hareesh Chandrasekar, Nagaboopathy Mohan, Dhayalan Shakthivel, Indian Patent Office, 2016/04, Application number: TEMP/E-1/8958/2016-CHE.