2. Substrate Effects in GaN-on-Silicon RF Device Technology, Hareesh Chandrasekar, in Wide Bandgap Semiconductor Electronics and Devices (Selected Topics in Electronics and Systems: Volume 63) edited by Uttam Singisetti, Towhidur Razzak and Yuewei Zhang, https://doi.org/10.1142/11719, ISBN:978-981-121-647-3, February 2020.
1. Dissimilar Hetero-Interfaces with Group III-A Nitrides: Material And Device Perspective, Hareesh Chandrasekar, PhD Dissertation, Faculty of Engineering, Indian Institute of Science, October 2016.