36. Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications, Aniruddhan Gowrisankar, Vanjari Sai Charan, Hareesh Chandrasekar, Anirudh Venugopalarao, R Muralidharan, Srinivasan Raghavan, Digbijoy N Nath, IEEE Transactions on Electron Devices 70(4), 1622-1627 (2023), DOI:10.1109/TED.2023.3244514.
35. Physical design guidelines to minimize area-specific ON-resistance for rated ON-current and breakdown voltage of GaN power HEMTs, Md Arif Khan, Rangarajan Muralidharan, Hareesh Chandrasekar, Semiconductor Science and Technology 38(3), 035021 (2023), DOI:10.1088/1361-6641/acb8d5.
34. Study of TaN-gated p-GaN E-mode HEMT, Rijo Baby, K Reshma, Hareesh Chandrasekar, Muralidharan Rangarajan, Srinivasan Raghavan, Digbijoy N Nath, IEEE Transactions on Electron Devices 70(4), 1607-1612 (2023), DOI:10.1109/TED.2023.3241132.
33. Study of the impact of interface traps associated with SiNx passivation on AlGaN/GaN HEMTs, Rijo Baby, Anirudh Venugopalrao, Hareesh Chandrasekar, Srinivasan Raghavan, Muralidharan Rangarajan, Digbijoy N Nath, Semiconductor Science and Technology 37(3), 035005 (2022), DOI:10.1088/1361-6641/ac48dd.
32. Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications, Nayana Remesh, Hareesh Chandrasekar, Anirudh Venugopalrao, Srinivasan Raghavan, Muralidharan Rangarajan, Digbijoy N Nath, Journal of Applied Physics 130, 075702 (2021), DOI:10.1063/5.0045952.
31. Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance, Mohammad Wahidur Rahman, Hareesh Chandrasekar, Towhidur Razzak, Hyunsoo Lee, Siddharth Rajan, Applied Physics Letters 119, 013504 (2021), DOI:10.1063/5.0055946.
30. Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors, V. Kranthi Kumar, Shashwat Rathkantiwar, Ankit Rao, Priyadarshini Ghosh, Sukanya Dhar, Hareesh Chandrasekar, Tanushree Choudhury, S. A. Shivashankar, Srinivasan Raghavan, ACS Applied Nano Materials 4, 6734-6744 (2021), DOI:10.1021/acsanm.1c00758.
29. Low voltage drop tunnel junctions grown monolithically by MOCVD, Zane Jamal-Eddine, Syed M. N. Hassan, Brendan Gunning, Hareesh Chandrasekar, Mary Crawford, Andrew Armstrong, Shamsul Arafin, Siddharth Rajan, Applied Physics Letters 118, 053503 (2021), DOI:10.1063/5.0033554.
28. Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors, Junao Cheng, Hao Yang, Nicholas G. Combs, Wangzhou Wu, Honggyu Kim, Hareesh Chandrasekar, Caiyu Wang, Siddharth Rajan, Susanne Stemmer, Wu Lu , Applied Physics Letters 118, 042105 (2021), DOI:10.1063/5.0022550.
27. All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions, Syed MN Hasan, Brendan Patrick Gunning, Zane Jamal-Eddine, Hareesh Chandrasekar, Mary Crawford, Andrew M Armstrong, Siddharth Rajan, Shamsul Arafin, Journal of Physics D: Applied Physics 54, 155103 (2021), DOI:10.1088/1361-6463/abdb0f.
26. Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs, Zane Jamal-Eddine, Syed M. N. Hassan, Brendan Gunning, Hareesh Chandrasekar, Mary Crawford, Andrew Armstrong, Shamsul Arafin, Siddharth Rajan, Applied Physics Letters 117, 051103 (2020), DOI:10.1063/5.0015403.
25. Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates, Hareesh Chandrasekar, Towhidur Razzak, Caiyu Wang, Zeltzin Reyes, Kausik Majumdar, Siddharth Rajan, Advanced Electronic Materials (2020), DOI:10.1002/aelm.202000074.
24. Carrier Transport in Graphene Field Effect Transistors on Gated Polar Nitride Substrates, Krishna Balasubramanian,* Hareesh Chandrasekar,* Srinivasan Raghavan, physica status solidi (a) (2020), DOI:10.1002/pssa.201900949 (*equal contribution).
23. High-Current Density SmTiO3/SrTiO3 Field-effect Transistors, Hareesh Chandrasekar, Kaveh Ahadi, Towhidur Razzak, Susanne Stemmer, Siddharth Rajan, ACS Applied Electronic Materials 2(2), 510-516 (2020), DOI:10.1021/acsaelm.9b00738.
22. Nanoscale etching of perovskite oxides for field effect transistor applications, Junao Cheng, Hao Yang, Caiyu Wang, Nick Combs, Chris Freeze, Omor Shoron, Wangzhou Wu, Nidhin Kurian Kalarickal, Hareesh Chandrasekar, Susanne Stemmer, Siddharth Rajan, Wu Lu, Journal of Vacuum Science & Technology B 38, 012201 (2020), DOI:10.1116/1.5122667@jvb.2020.EIPBN2019.issue-1.
21. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm, Towhidur Razzak, Hareesh Chandrasekar, Kamal Hussain, Choong Hee Lee, Abdullah Mamun, Hao Xue, Zhanbo Xia, Shahadat H Sohel, Mohammad Wahidur Rahman, Sanyam Bajaj, Caiyu Wang, Wu Lu, Asif Khan, Siddharth Rajan, Applied Physics Letters 116, 023507 (2020), DOI:10.1063/1.5130590.
20. Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field, Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore, Caiyu Wang, Aidan J Lee, Joe McGlone, Nidhin Kurian Kalarickal, Aaron Arehart, Steven Ringel, Fengyuan Yang, Siddharth Rajan, Applied Physics Letters 115, 252104 (2019), DOI:10.1063/1.5130669.
19. Velocity saturation in La-doped BaSnO3 thin films, Hareesh Chandrasekar, Junao Cheng, Tianshi Wang, Zhanbo Xia, Nicholas G Combs, Christopher R Freeze, Patrick B Marshall, Joe McGlone, Aaron Arehart, Steven Ringel, Anderson Janotti, Susanne Stemmer, Wu Lu, Siddharth Rajan, Applied Physics Letters 115, 092102 (2019), DOI:10.1063/1.5097791.
18. First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs, Bhawani Shankar, Ankit Soni, Hareesh Chandrasekar, Srinivasan Raghavan, Mayank Shrivastava, IEEE Transactions on Electron Devices 66, 3433-3440 (2019), DOI:10.1109/TED.2019.2919491.
17. Substrate Effects in GaN-on-Silicon RF Device Technology, Hareesh Chandrasekar, International Journal of High Speed Electronics and Systems 28, 1940001 (2019), DOI:10.1142/S0129156419400019.
16. Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology, Hareesh Chandrasekar, Michael J Uren, Michael A Casbon, Hassan Hirshy, Abdalla Eblabla, Khaled Elgaid, James W Pomeroy, Paul J Tasker, Martin Kuball, IEEE Transactions on Electron Devices 66, 1681-1687 (2019), DOI:10.1109/TED.2019.2896156.
15. Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices, Callum Middleton, Hareesh Chandrasekar, Manikant Singh, James W Pomeroy, Michael J Uren, Daniel Francis, Martin Kuball, Applied Physics Express 12, 024003 (2019), DOI:10.7567/1882-0786/aaf4ee.
14. Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates, Rohith Soman, Nagaboopathy Mohan, Hareesh Chandrasekar, Navakanta Bhat, Srinivasan Raghavan, Journal of Applied Physics 124, 245104 (2018), DOI:10.1063/1.5063420.
13. “Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model, Manikant Singh, Michael J Uren, Trevor Martin, Serge Karboyan, Hareesh Chandrasekar, Martin Kuball, IEEE Transactions on Electron Devices 65, 3746-3753 (2018), DOI:10.1109/TED.2018.2860902.
12. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates, Hareesh Chandrasekar, Michael J Uren, Abdalla Eblabla, Hassan Hirshy, Michael A Casbon, Paul J Tasker, Khaled Elgaid, Martin Kuball, IEEE Electron Device Letters 39, 1556-1559 (2018), DOI:10.1109/LED.2018.2864562.
11. Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates, Hareesh Chandrasekar, Sandeep Kumar, Kolla Lakshmi Ganapathi, Shreesha Prabhu, Surani Bin Dolmanan, Sudhiranjan Tripathy, Srinivasan Raghavan, KN Bhat, Sangeneni Mohan, Rangarajan Muralidharan, Navakanta Bhat, Digbijoy N Nath, IEEE Transactions on Electron Devices 65, 3711-3718 (2018), DOI:10.1109/TED.2018.2856773.
10. The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth, Abheek Bardhan, Nagaboopathy Mohan, Hareesh Chandrasekar, Priyadarshini Ghosh, DV Sridhara Rao, Srinivasan Raghavan, Journal of Applied Physics 123, 165108 (2018), DOI:10.1063/1.5005080.
9. Thickness dependent parasitic channel formation at AlN/Si interfaces, Hareesh Chandrasekar, KN Bhat, Muralidharan Rangarajan, Srinivasan Raghavan, Navakanta Bhat, Scientific Reports 7, 1-10 (2017), DOI:10.1038/s41598-017-16114-w.
8. Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs, Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Hareesh Chandrasekar, Tathagata Paul, Sangeneni Mohan, Arindam Ghosh, Srinivasan Raghavan, Navakanta Bhat, Advanced Electronic Materials 3, 1600358 (2017), DOI:10.1002/aelm.201600358.
7. Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density, B Krishna Bharadwaj, Hareesh Chandrasekar, Digbijoy Nath, Rudra Pratap, Srinivasan Raghavan, Journal of Physics D: Applied Physics 49, 265301 (2016), DOI:10.1088/0022-3727/49/26/265301.
6. Growth stress induced tunability of dielectric permittivity in thin films, KVLV Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, KBR Varma, Rajeev Ranjan, Navakanta Bhat, Srinivasan Raghavan, Journal of Applied Physics 119, 014106 (2016), DOI:10.1063/1.4939466.
5. Optical-Phonon-Limited High-Field Transport in Layered Materials, Hareesh Chandrasekar, Kolla Lakshmi Ganapathi, Shubhadeep Bhattacharjee, Navakanta Bhat, Digbijoy N Nath, IEEE Transactions on Electron Devices 63, 767-772 (2015), DOI:10.1109/TED.2015.2508036.
4. Estimation of background carrier concentration in fully depleted GaN films, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan, Navakanta Bhat, Semiconductor Science and Technology 30, 115018 (2015), DOI:10.1088/0268-1242/30/11/115018.
3. Spotting 2D atomic layers on aluminum nitride thin films, Hareesh Chandrasekar, Kranthi Kumar Vaidyuala, Swathi Suran, Navakanta Bhat, Manoj Varma, Srinivasan Raghavan, Nanotechnology 26, 425202 (2015), DOI:10.1088/0957-4484/26/42/425202.
2. Electron mobility in few-layer MoxW1-xS2, Hareesh Chandrasekar, Digbijoy N Nath, Materials Research Express 2, 095007 (2015), DOI:10.1088/2053-1591/2/9/095007.
1. An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si, Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, KN Bhat, Navakanta Bhat, N Ravishankar, Srinivasan Raghavan, Applied Physics Letters 103, 211902 (2013), DOI:10.1063/1.4831968.