Conference Presentations

2021

31. Hybrid BaTiO₃/SiN_x/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance, Mohammad Wahidur Rahman, Towhidur Razzak, Hareesh Chandrasekar, Siddharth Rajan, 63^rd Electronic Materials Conference (EMC), Virtual, June 2021.

30. Impact of Buffer Traps on Temperature-dependent Dynamic Ron in AlGaN/GaN HEMTs, Nayana Remesh, Hareesh Chandrasekar, Srinivasan Raghavan, R Muralidharan, Digbijoy Nath, 63^rd Electronic Materials Conference (EMC), Virtual, June 2021.

2020

29. Monolithic MOCVD-grown III-nitride tunnel junctions with ultra-low resistance, Syed M. N. Hasan, Zane Jamal-Eddine, Brendan Gunning, Hareesh Chandrasekar, Mary Crawford, Andrew Armstrong Siddharth Rajan, Shamsul Arafin, 62^nd Electronic Materials Conference (EMC), Columbus, OH USA, June 2020.

28. Theoretical analysis of transparent graded InGaN tunnel junctions for blue LEDs, Zane Jamal-Eddine, Syed M. N. Hasan, Brendan Gunning, Hareesh Chandrasekar, Mary Crawford, Andrew Armstrong, Shamsul Arafin, Siddharth Rajan, 62^nd Electronic Materials Conference (EMC), Columbus, OH USA, June 2020.

27. Low-field transport in high-Al composition Al_xGa_1-xN channel high electron mobility transistors, Towhidur Razzak, Hareesh Chandrasekar, Hao Xue, Kamal Hossain, Joe McGlone, Shahadat H Sohel, Zhanbo Xia, Mohammad Wahidur Rahman, Sanyam Bajaj, Steve Ringel, Asif Khan, Wu Lu, Siddharth Rajan, 62^nd Electronic Materials Conference (EMC), Columbus, OH USA, June 2020.

26. Reverse Breakdown Field and Interface Properties of Metal/BaTiO₃/GaN Junctions, Mohammad Wahidur Rahman, Hareesh Chandrasekar, Towhidur Razzak, Shahadat H Sohel, Siddharth Rajan, 62^nd Electronic Materials Conference (EMC), Columbus, OH USA, June 2020.

25. All-MOCVD tunnel junctions for reduced-droop high-power multi-junction cascaded LEDs, Brendan P. Gunning, Syed M. N. Hassan, Zane Jamal-Eddine, Hareesh Chandrasekar, Hyemin Jung, Mary H. Crawford, Andrew A. Armstrong, Siddharth Rajan, Shamsul Arafin, 8^th International Symposium on Growth of III-Nitrides (ISGN), San Diego, CA, USA, May 2020.

24. Integration of high permittivity dielectrics for enhanced breakdown in III-Nitride devices, Towhidur Razzak, Hareesh Chandrasekar, Kamal Hossain, Choong Hee Lee, Abdullah Mamun, Hao Xue, Zhanbo Xia, Shahadat H Sohel, Mohammad Wahidur Rahman, Sanyam Bajaj, Caiyu Wang, Wu Lu, Asif Khan, Siddharth Rajan, WOCSEMMAD (Workshop on Compound Semiconductor Materials and Devices), Palm Springs, California, USA, February 2020.

2019

23. Sidewall activation of buried p-GaN layers in tunnel-junction enabled multi-junction cascaded blue LEDs, Zane J.-Eddine, Syed M N Hasan, Brendan Gunning, Hareesh Chandrasekar, Mary Crawford, Andrew Armstrong, Shamsul Arafin, Siddharth Rajan, 13^th International Conference on Nitride Semiconductors (ICNS), Seattle/Bellevue, WA, USA, July 2019.

22. Velocity Saturation in BaSnO₃ Thin Films, Hareesh Chandrasekar, Junao Cheng, Nicholas G Coombs, Chrisopher R Freeze, Susanne Stemmer, Wu Lu and Siddharth Rajan, 61^st Electronic Materials Conference (EMC), Ann Arbor, Michigan, USA, June 2019.

21. Metal/BaTiO₃/β-Ga₂O₃ Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field, Zhanbo Xia, Caiyu Wang, Hareesh Chandrasekar, Wyatt Moore, Aidan Lee, Nidhin Kurian Kalarickal, Fengyuan Yang, Siddharth Rajan, 77^th Device Research Conference (DRC), Ann Arbor, Michigan, USA, June 2019.

20. Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model, Manikant Singh, Michael J Uren, Serge Karboyan, Hareesh Chandrasekar, Trevor Martin, Martin Kuball, CS-MANTECH, Minneapolis, MN, USA, May 2019.

2018

19. Multiple drain-current-transient responses from the same trap: explanation using floating buffer model, Manikant Singh, Michael J Uren, Hareesh Chandrasekar, Serge Karboyan, Trevor Martin, Martin Kuball, International Workshop on Nitride Semiconductors (IWN) 2018, Kanazawa, Japan, November 2018.

18. "Kink" in AlGaN/GaN HEMTs: floating buffer model, Michael J Uren, Manikant, Trevor Martin, Serge Karboyan, Hareesh Chandrasekar, Hassan Hirshy, Michael Casbon, Paul Tasker and Martin Kuball, European Space Agency Workshop, UK, 2018.

2017

17. Thermal Switching Performance of MoS₂ transistors, Manikant Singh, Hareesh Chandrasekar, Michael J Uren, Martin Kuball, GW4 Nanofabrication Workshop, Bath, UK, July 2017.

16. Dielectric Engineering of HfO₂ Gate Stacks for Normally-ON and Normally-OFF GaN transistors, Hareesh Chandrasekar, Sandeep Kumar, Kolla L Ganapathi, Shreesha Prabhu, Srinivasan Raghavan, Sangeneni Mohan, Rangarajan Muralidharan, Navakanta Bhat, Digbijoy N Nath, 12^th International Conference on Nitride Semiconductors (ICNS-12), Salzbourg, France, July 2017.

15. Kink in AlGaN/GaN-HEMTs: Impact on Devices and Demonstration of Suppression, Manikant Singh, Michael Uren, Serge Karboyan, Trevor Martin, Hareesh Chandrasekar, Martin Kuball, 12^th International Conference on Nitride Semiconductors (ICNS-12), Salzbourg, France, July 2017.

14. Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs, Bhawani Shankar, Ankit Soni, Manikant Singh, Rohith Soman, Hareesh Chandrasekar, Nagaboopathy Mohan, Neha Mohta, Nayana Ramesh, Shreesha Prabhu, Abhay Kulkarni, Digbijoy Nath, R Muralidharan, K N Bhat, Srinivasan Raghavan, Navakanta Bhat, Mayank Shrivastava, IEEE International Reliability Physics Symposium (IRPS), Monterey, California, USA, April 2017.

2016

13. Towards Nitride-based Dielectric Environment for High Performance MoS₂ FETs, Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Hareesh Chandrasekar, Thathagata Paul, Sangeneni Mohan, Arindam Ghosh, Srinivasan Raghavan, Navakanta Bhat, 47^th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA, December 2016.

2015

12. Implications of a Silicon Back Gate on Atomically Thin Devices, Hareesh Chandrasekar, Krishna Bharadwaj B, Srinivasan Raghavan, Navakanta Bhat, 18^th International Workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, December 2015.

11. Quantifying Carriers in Fully Depleted GaN Buffers, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan, Navakanta Bhat, 18^th International Workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, India, December 2015.

10. Spotting 2D Atomic Layers on Aluminum Nitride Thin Films, Hareesh Chandrasekar, Krishna Bharadwaj B, Kranti Kumar Vaidyuala, Swati Suran, Navakanta Bhat, Manoj M Varma, Srinivasan Raghavan, Materials Research Society (MRS) Fall Meeting, Boston, USA, November 2015.

9. Estimation of Background Carrier Concentration in Fully Depleted GaN Films, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan, Navakanta Bhat, Materials Research Society (MRS) Fall Meeting, Boston, USA, November 2015.

8. Optical Phonon Limited High Field Transport in Layered Materials, Hareesh Chandrasekar, Kolla Lakshmi Ganapati, Shubhadeep Bhattacharjee, Navakanta Bhat, Digbijoy N Nath, Materials Research Society (MRS) Fall Meeting, Boston, USA, November 2015.

7. Defect Density Dependent Hysteresis in CVD Grown Graphene Field Effect Transistors, Krishna Bharadwaj B, Hareesh Chandrasekar, Rudra Pratap, Srinivasan Raghavan, Digbijoy Nath, Materials Research Society (MRS) Fall Meeting, Boston, USA, November 2015.

6. An Early In-situ Stress Signature of Mg and Si Incorporation into MOCVD grown GaN, Rohith Soman, Hareesh Chandrasekar, Nagaboopathy Mohan, Navakanta Bhat, Srinivasan Raghavan, 6^th International Symposium on Growth of III-Nitrides (ISGN-6), Hamamatsu, Japan, November 2015.

2014

5. Effect of Growth Stress in High-k Dielectric Thin Films, KVLV Narayanachari, Hareesh Chandrasekar, Amiya Banerjee, KBR Varma, Navakanta Bhat, Srinivasan Raghavan, Materials Research Society (MRS) Fall Meeting-2014, Boston, USA, December 2014.

4. Estimation of Background Carrier Concentration in Semi-Insulating, Fully Depleted GaN Films, Hareesh Chandrasekar, Manikant Singh, Srinivasan Raghavan, Navakanta Bhat, 2^nd IEEE International Conference on Emerging Electronics (ICEE-2014), Bangalore, India, December 2014.

3. 2DEG Behaviour on Various Transition Layer Schemes in AlGaN/GaN HEMTs, Manikant Singh, Nagaboopathy Mohan, Rohith Soman, Hareesh Chandrasekar, Srinivasan Raghavan, 2^nd IEEE International Conference on Emerging Electronics (ICEE-2014), Bangalore, India, December 2014.

2013

2. An Early In-Situ Stress Signature for the Successful MOCVD Integration of Nitrides on (111) Silicon”, Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, KN Bhat, Navakanta Bhat, N Ravishankar, Srinivasan Raghavan, International Union of Materials Research Societies – International Conference in Asia (IUMRS-ICA-2013), Bangalore, India, December 2013.

1. An In-Situ Stress Signature of the AlN-Si Pre-Growth Interface, Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan, K N Bhat, Navakanta Bhat, Srinivasan Raghavan, 10^th International Conference on Nitride Semiconductors (ICNS-10), Washington D.C., USA, August 2013.