4. AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications, Aniruddhan Gowrisankar, Sai Charan Vanjari, Abheek Bardhan, Anirudh Venugopalarao, Hareesh Chandrasekar, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N Nath, 2022 IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, December 2022.
3. Misinterpretation of Drain Transient Spectroscopy in GaN HEMTs: Explanation using a floating buffer model, Manikant Singh, Michael J Uren, Serge Karboyan, Hareesh Chandrasekar, Trevor Martin, Martin Kuball, CS-MANTECH, Minneapolis, MN, USA, April 2019.
2. Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs, Bhawani Shankar, Ankit Soni, Manikant Singh, Rohith Soman, Hareesh Chandrasekar, Nagaboopathy Mohan, Neha Mohta, Nayana Ramesh, Shreesha Prabhu, Abhay Kulkarni, Digbijoy Nath, R Muralidharan, KN Bhat, Srinivasan Raghavan, Navakant Bhat, Mayank Shrivastava, IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, April 2017, DOI:10.1109/IRPS.2017.7936414.
1. 2DEG behavior of AlGaN/GaN HEMTs on various transition buffers, Manikant Singh, Nagaboopathy Mohan, Rohith Soman, Hareesh Chandrasekar, Srinivasan Raghavan, IEEE 2nd International Conference on Emerging Electronics (ICEE), Bengaluru, India, December 2014, DOI:10.1109/ICEmElec.2014.7151163.