Hareesh Chandrasekar

Thanks for stopping by my research page.

I am a researcher working primarily on wide band gap semiconductor devices & materials. My work straddles the fields of electrical engineering, material science and applied physics with semiconductor materials, primarily wide-bandgap semiconductors such as Gallium Nitride and its alloys, being the vehicle to explore engineering applications and scientific phenomena in these domains. These materials are finding commercial uptake in power electronics as high-voltage switches for converters, motor drives, inverters for solar PV and fast chargers for electric vehicles to name a few. In the radio-frequency domain, GaN-based power amplifiers and low-noise amplifiers for wireless communication (5G and beyond, satellite communications) are a major area of research & development.

I graduated with a Ph.D. in Engineering from the interdisciplinary Ph.D program at the Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science, Bengaluru, India in 2016, where I was jointly advised by Profs. Srinivasan (Vasu) Raghavan & Navakanta Bhat. My Ph.D. thesis titled Dissimilar Hetero-interfaces with Group III-A Nitrides: Material & Device Perspective was awarded the Departmental Best Thesis Award in Applied Research for 2016.

This was followed by post-doctoral work at the Centre for Device Thermography & Reliability, School of Phyics, University of Bristol, Bristol, UK from 2016-2018 where I worked with Profs. Michael Uren and Martin Kuball primarily on GaN-on-Silicon Devices for RF applications. My next post-doctoral stint, from 2018-2020, was with Prof. Siddharth Rajan at the Electron Device Laboratory, Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, USA where I carried out research pertaining to novel device designs in the III-Nitride and Perovskite Oxide material systems for conventional and unconventional electronic switches.

I remain mildly obsessed with engineering the best possible performance from wide band-gap semiconductor devices. This requires an end-to-end understanding of epitaxial material growth, fundamental electronic properties, device processing and characterization, and device design to utilize the full potential conferred by the superior electronic properties of this class of materials. I have had the privilege of gaining first-hand experience in all of these aspects in my research journey thus far.

You can view my full CV here.

You can also explore my research interests and activities here, view my publications here and find more accessible versions in the media for a subset of my research output here.

If you have similar or complementary research interests or expertise and would like to collaborate, connect or comment on my work, feel free to reach out to me on these forums.